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1.发明申请SELECTIVE EPITAXIAL GERMANIUM GROWTH ON SILICON-TRENCH FILL AND IN SITU DOPING 有权选择性外源锗增长在硅胶填料和原位浸渍公开(公告)号：US20130210221A1
公开(公告)日：2013-08-15
申请号：US13765733
申请日：2013-02-13
申请人： YI-CHIAU HUANG , Jiping Li , Miao Jin , Bingxi Sun Wood , Errol Antonio C. Sanchez , Yihwan Kim
发明人： YI-CHIAU HUANG , Jiping Li , Miao Jin , Bingxi Sun Wood , Errol Antonio C. Sanchez , Yihwan Kim
IPC分类号： H01L21/02
CPC分类号： H01L21/02694 , H01L21/02532 , H01L21/0262 , H01L21/02647 , H01L21/02675
摘要： Methods and apparatus for forming a germanium containing film on a patterned substrate are described. The patterned substrate is a silicon, or silicon containing material, and may have a mask material formed on a surface thereof. The germanium containing material is formed selectively on exposed silicon in the recesses of the substrate, and an overburden of at least 50% is formed on the substrate. The germanium containing layer is thermally treated using pulsed laser radiation, which melts a portion of the overburden, but does not melt the germanium containing material in the recesses. The germanium containing material in the recesses is typically annealed, at least in part, by the thermal treatment. The overburden is then removed.
摘要翻译： 描述了在图案化衬底上形成含锗膜的方法和装置。 图案化衬底是硅或含硅材料，并且可以在其表面上形成掩模材料。 含锗材料在衬底的凹槽中的暴露的硅上选择性地形成，并且在衬底上形成至少50％的覆盖层。 使用脉冲激光辐射对含锗层进行热处理，所述脉冲激光辐射熔化上覆层的一部分，但不熔化凹陷中的含锗材料。 凹陷中的含锗材料通常通过热处理至少部分退火。 然后卸下覆盖层。
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2.发明申请公开(公告)号：US20130280891A1
公开(公告)日：2013-10-24
申请号：US13784109
申请日：2013-03-29
IPC分类号： H01L21/02
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/06 , C30B29/08 , C30B29/52 , H01L21/02524 , H01L21/02532 , H01L21/02535
摘要： A method and apparatus for forming semiconductive semiconductor-metal alloy layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy, optionally including silicon, is formed on the substrate. The metal precursor is typically a metal halide, which may be provided by evaporating a liquid metal halide, subliming a solid metal halide, or by contacting a pure metal with a halogen gas. A group IV halide deposition control agent is used to provide selective deposition on semiconductive regions of the substrate relative to dielectric regions. The semiconductive semiconductor-metal alloy layers may be doped, for example with boron, phosphorus, and/or arsenic. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.
摘要翻译： 描述了用于形成半导体半导体 - 金属合金层的方法和装置。 将锗前体和金属前体提供到室，并且在衬底上形成任选地包含硅的锗 - 金属合金外延层。 金属前体通常是金属卤化物，其可以通过蒸发液体金属卤化物，升华固体金属卤化物或通过使纯金属与卤素气体接触来提供。 使用IV族卤化物沉积控制剂来相对于电介质区域在衬底的半导体区域上提供选择性沉积。 半导体半导体 - 金属合金层可以掺杂例如硼，磷和/或砷。 前体可以通过喷头或通过侧入口提供，并且耦合到室的排气系统可以被单独加热以管理排气部件的冷凝。
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公开(公告)号：US08658540B2
公开(公告)日：2014-02-25
申请号：US13156082
申请日：2011-06-08
IPC分类号： H01L21/306 , B08B6/00 , B44C1/22
CPC分类号： H01L21/67115 , H01L21/68742
摘要： Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.
摘要翻译： 本文提供了从处理室内表面除去残留物的方法。 在一些实施例中，调节处理室的内表面的方法可以包括将处理室保持在小于约800摄氏度的第一压力和第一温度; 在所述第一压力和所述第一温度下向所述处理室提供工艺气体，其中所述工艺气体包括氯和氮以除去设置在所述处理室的内表面上的残留物; 以及将处理室中的压力从第一压力增加到第二压力，同时继续向处理室提供处理气体。
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公开(公告)号：US08647439B2
公开(公告)日：2014-02-11
申请号：US13456500
申请日：2012-04-26
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： H01L21/02661 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/3065
摘要： Methods of preparing a clean surface of germanium tin or silicon germanium tin layers for subsequent deposition are provided. An overlayer of Ge, doped Ge, another GeSn or SiGeSn layer, a doped GeSn or SiGeSn layer, an insulator, or a metal can be deposited on a prepared GeSn or SiGeSn layer by positioning a substrate with an exposed germanium tin or silicon germanium tin layer in a processing chamber, heating the processing chamber and flowing a halide gas into the processing chamber to etch the surface of the substrate using either thermal or plasma assisted etching followed by depositing an overlayer on the substantially oxide free and contaminant free surface. Methods can also include the placement and etching of a sacrificial layer, a thermal clean using rapid thermal annealing, or a process in a plasma of nitrogen trifluoride and ammonia gas.
摘要翻译： 提供了制备用于后续沉积的锗锡或硅锗锡层的洁净表面的方法。 通过用暴露的锗锡或硅锗锡定位衬底，可以在制备的GeSn或SiGeSn层上沉积Ge，掺杂Ge，另一GeSn或SiGeSn层，掺杂GeSn或SiGeSn层，绝缘体或金属的覆盖层 层，加热处理室并使卤化物气体流入处理室，以使用热或等离子体辅助蚀刻来蚀刻衬底的表面，随后在基本上无氧化物和无污染物的表面上沉积覆盖层。 方法还可以包括牺牲层的放置和蚀刻，使用快速热退火的热清洁，或三氟化氮和氨气的等离子体中的工艺。
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公开(公告)号：US08759201B2
公开(公告)日：2014-06-24
申请号：US13482585
申请日：2012-05-29
IPC分类号： H01L21/36 , H01L21/311 , H01L21/469
CPC分类号： H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation layer. The doped semiconductor layer is formed on the foundation layer. Each layer may be formed by vapor deposition processes such as CVD. The foundation layer may be germanium and the doped semiconductor layer may be phosphorus doped germanium.
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公开(公告)号：US20120306054A1
公开(公告)日：2012-12-06
申请号：US13482585
申请日：2012-05-29
IPC分类号： H01L21/20 , H01L29/16 , H01L21/322
CPC分类号： H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation layer. The doped semiconductor layer is formed on the foundation layer. Each layer may be formed by vapor deposition processes such as CVD. The foundation layer may be germanium and the doped semiconductor layer may be phosphorus doped germanium.
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公开(公告)号：US09082684B2
公开(公告)日：2015-07-14
申请号：US13784403
申请日：2013-03-04
IPC分类号： H01L29/161 , H01L21/02 , H01L29/78 , H01L29/165
CPC分类号： H01L29/161 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/0251 , H01L21/02532 , H01L21/02535 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/165 , H01L29/7848
摘要： A method for forming germanium tin layers and the resulting embodiments are described. A germanium precursor and a tin precursor are provided to a chamber, and an epitaxial layer of germanium tin is formed on the substrate. The germanium tin layer is selectively deposited on the semiconductor regions of the substrate and can include thickness regions of varying tin and dopant concentrations. The germanium tin layer can be selectively deposited by either alternating or concurrent flow of a halide gas to etch the surface of the substrate.
摘要翻译： 描述形成锗锡层的方法和所得到的实施例。 将锗前体和锡前体提供到室，并且在该衬底上形成锗锡的外延层。 锗锡层选择性地沉积在衬底的半导体区域上，并且可以包括不同锡和掺杂剂浓度的厚度区域。 可以通过卤化物气体的交替或同时流动来选择性地沉积锗锡层，以蚀刻衬底的表面。
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8.发明授权Method of forming high growth rate, low resistivity germanium film on silicon substrate 有权在硅衬底上形成高增长率，低电阻率锗膜的方法公开(公告)号：US08822312B2
公开(公告)日：2014-09-02
申请号：US13482725
申请日：2012-05-29
IPC分类号： H01L29/861
CPC分类号： H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation layer. The doped semiconductor layer is formed on the foundation layer. Each layer may be formed by vapor deposition processes such as CVD. The foundation layer may be germanium and the doped semiconductor layer may be phosphorus doped germanium.
摘要翻译： 提供了在衬底上形成掺杂半导体层的方法。 具有与掺杂半导体层的热力学有利晶体结构相适应的晶体结构的基底层形成在基底上并进行退火或表面退火，以使基底层的表面基本上结晶。 掺杂半导体层形成在基础层上。 每个层可以通过诸如CVD的气相沉积工艺形成。 基底层可以是锗，并且掺杂半导体层可以是掺杂磷的锗。
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9.发明授权Methods and apparatus for forming silicon germanium-carbon semiconductor structures 有权用于形成硅锗 - 碳半导体结构的方法和装置公开(公告)号：US08669590B2
公开(公告)日：2014-03-11
申请号：US13218782
申请日：2011-08-26
IPC分类号： H01L29/78
CPC分类号： H01L21/0262 , H01L21/02441 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L29/1054 , H01L29/165 , H01L29/517 , H01L29/66575 , H01L29/7848
摘要： Methods and apparatus for forming semiconductor structures are disclosed herein. In some embodiments, a semiconductor structure may include a first germanium carbon layer having a first side and an opposing second side; a germanium-containing layer directly contacting the first side of the first germanium carbon layer; and a first silicon layer directly contacting the opposing second side of the first germanium carbon layer. In some embodiments, a method of forming a semiconductor structure may include forming a first germanium carbon layer atop a first silicon layer; and forming a germanium-containing layer atop the first germanium carbon layer.
摘要翻译： 本文公开了用于形成半导体结构的方法和装置。 在一些实施例中，半导体结构可以包括具有第一侧和相对的第二侧的第一锗碳层; 直接接触第一锗碳层的第一侧的含锗层; 以及直接接触第一锗碳层的相对的第二侧的第一硅层。 在一些实施例中，形成半导体结构的方法可以包括在第一硅层顶上形成第一锗碳层; 以及在第一锗碳层顶上形成含锗层。
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10.发明申请METHOD OF FORMING HIGH GROWTH RATE, LOW RESISTIVITY GERMANIUM FILM ON SILICON SUBSTRATE 有权在硅基材上形成高生长速率，低电阻率锗膜的方法公开(公告)号：US20120306055A1
公开(公告)日：2012-12-06
申请号：US13482725
申请日：2012-05-29
CPC分类号： H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation layer. The doped semiconductor layer is formed on the foundation layer. Each layer may be formed by vapor deposition processes such as CVD. The foundation layer may be germanium and the doped semiconductor layer may be phosphorus doped germanium.
摘要翻译： 提供了在衬底上形成掺杂半导体层的方法。 具有与掺杂半导体层的热力学有利晶体结构相适应的晶体结构的基底层形成在基底上并进行退火或表面退火，以使基底层的表面基本上结晶。 掺杂半导体层形成在基础层上。 每个层可以通过诸如CVD的气相沉积工艺形成。 基底层可以是锗，并且掺杂半导体层可以是掺杂磷的锗。
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