公开(公告)号：US08964488B2

公开(公告)日：2015-02-24

申请号：US13470617

申请日：2012-05-14

申请人： Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

发明人： Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

IPC分类号： G11C5/14 ,  G11C7/10 ,  G11C11/22 ,  G11C13/00 ,  G11C8/10

CPC分类号： G11C5/14 ,  G11C7/1078 ,  G11C7/1096 ,  G11C8/10 ,  G11C11/22 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0088 ,  G11C2013/009 ,  G11C2213/72

摘要： A non-volatile memory device using a variable resistive element is provided. The non-volatile memory device includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator configured to generate a first voltage, a voltage pad configured to receive an external voltage that has a level higher than the first voltage, a write driver configured to be supplied with the external voltage and configured to write data to the plurality of non-volatile memory cells selected from the memory cell array; a sense amplifier configured to be supplied with the external voltage and configured to read data from the plurality of non-volatile memory cells selected from the memory cell array, and a row decoder and a column decoder configured to select the plurality of non-volatile memory cells included in the memory cell array, the row decoder being supplied with the first voltage and the column decoder being supplied with the external voltage.

摘要翻译： 提供了使用可变电阻元件的非易失性存储器件。 非易失性存储器件包括具有多个非易失性存储器单元的存储单元阵列，被配置为产生第一电压的第一电压发生器，被配置为接收具有高于第一电压的电平的外部电压的电压焊盘 写入驱动器，被配置为被提供有所述外部电压并被配置为向从所述存储单元阵列中选择的所述多个非易失性存储器单元写入数据; 感测放大器，被配置为被提供有外部电压并且被配置为从从存储单元阵列中选择的多个非易失性存储器单元读取数据;行解码器和列解码器，被配置为选择多个非易失性存储器 包括在存储单元阵列中的单元，行解码器被提供有第一电压，并且列解码器被提供有外部电压。

公开(公告)号：US08697420B2

公开(公告)日：2014-04-15

申请号：US12992531

申请日：2009-05-20

申请人： Dong Woon Cho, I ,  Dae-Hee Lee ,  Eon Oh ,  Dae Eung Kim ,  Hyun Ah Bae ,  Ji-Hye Kim ,  Byung-Serk Hurh

发明人： Dong Woon Cho, I ,  Dae-Hee Lee ,  Eon Oh ,  Dae Eung Kim ,  Hyun Ah Bae ,  Ji-Hye Kim ,  Byung-Serk Hurh

IPC分类号： C12N1/22 ,  A01N65/00

CPC分类号： C12P21/06 ,  A23J3/32 ,  A23J3/346 ,  A23L33/18

摘要： Provided is a method for producing corn gluten hydrolysate comprising: (a) separating corn gluten protein by removing carbohydrate, water soluble sugars, inorganic materials and fiber material; (b) preparing corn gluten protein lysate by carrying out acid hydrolysis, enzymatic hydrolysis or natural fermentation; and (c) increasing a content of branch chain amino acid (BCAA) which is included in the hydrolysate by isolating, concentrating, precipitating, desalting and filtering the resultant corn gluten protein lysate. With improved pre-treatment and concentration processes as compared with the conventional method, the hydrolysate prepared according to the present invention is rich in amino acids and low-molecular-weight peptides. In particular, free amino acids and branched-chain amino acids (BCAA) are included in large quantity.

摘要翻译： 本发明提供玉米面筋水解产物的制造方法，其特征在于：（a）通过除去碳水化合物，水溶性糖，无机材料和纤维材料来分离玉米面筋蛋白; （b）通过进行酸水解，酶水解或天然发酵来制备玉米麸质蛋白裂解液; 和（c）通过分离，浓缩，沉淀，脱盐和过滤得到的玉米面筋蛋白裂解物来增加包含在水解产物中的支链氨基酸（BCAA）的含量。 与常规方法相比，通过改进的预处理和浓缩方法，根据本发明制备的水解产物富含氨基酸和低分子量肽。 特别地，大量包含游离氨基酸和支链氨基酸（BCAA）。

公开(公告)号：US08465100B2

公开(公告)日：2013-06-18

申请号：US13005513

申请日：2011-01-12

申请人： Jung Eung Kim

发明人： Jung Eung Kim

IPC分类号： A47C16/02

CPC分类号： A47C16/025

摘要： The present invention relates to a portable footrest including a top plate, a leg which supports the top plate and which is foldable, a support for maintaining the leg at an upright state, and a slider which has a square C-shaped sliding portion formed at a portion of both sides thereof and ended at an end thereof, and which has protrusions formed at a lower surface thereof. The slider is arranged at both sides of the top plate, and the sliding portion of the slider moves along an edge of the top plate.

摘要翻译： 本发明涉及一种便携式脚踏板，其包括顶板，支撑顶板并且可折叠的腿部，用于将腿保持在直立状态的支撑件，以及滑块，该滑块具有形成在所述顶板上的正方形C形滑动部分 其两侧的一部分并且在其一端结束，并且在其下表面具有形成的突起。 滑块布置在顶板的两侧，并且滑块的滑动部分沿着顶板的边缘移动。

公开(公告)号：US20130039124A1

公开(公告)日：2013-02-14

申请号：US13655666

申请日：2012-10-19

申请人： Hye-jin KIM ,  Kwang-jin LEE ,  Du-eung KIM

发明人： Hye-jin KIM ,  Kwang-jin LEE ,  Du-eung KIM

IPC分类号： G11C11/00

CPC分类号： G11C13/0064 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0092

摘要： A method of operating a phase change random access memory (PRAM) device includes performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.

摘要翻译： 操作相变随机存取存储器（PRAM）装置的方法包括执行程序操作以将数据存储在所述装置的所选PRAM单元中，其中所述程序操作包括多个顺序程序循环。 该方法还包括在编程操作的中间暂停编程操作，并且在暂停编程操作之后，响应于恢复命令恢复程序操作。

公开(公告)号：US08254159B2

公开(公告)日：2012-08-28

申请号：US12662512

申请日：2010-04-21

申请人： Yong-Jun Lee ,  Byung-Gil Choi ,  Du-Eung Kim

发明人： Yong-Jun Lee ,  Byung-Gil Choi ,  Du-Eung Kim

IPC分类号： G11C11/00

CPC分类号： G11C7/12 ,  G11C13/0004 ,  G11C13/0026 ,  G11C2213/72 ,  G11C2213/79

摘要： In a method of discharging bit-lines for a non-volatile semiconductor memory device performing a read-while-write operation. The method include discharging a global write bit-line to a ground voltage based on a write command within a first period. The method also includes maintaining the discharged voltage of the global write bit-line in the ground voltage during a second period.

摘要翻译： 在执行读写操作的非易失性半导体存储器件的放电位线的方法中。 该方法包括在第一周期内基于写入命令将全局写入位线放电到接地电压。 该方法还包括在第二周期期间将全局写入位线的放电电压保持在接地电压中。

公开(公告)号：US08194442B2

公开(公告)日：2012-06-05

申请号：US13091238

申请日：2011-04-21

申请人： Beak-Hyung Cho ,  Du-Eung Kim ,  Woo-Yeong Cho

发明人： Beak-Hyung Cho ,  Du-Eung Kim ,  Woo-Yeong Cho

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0078 ,  G11C2013/0092

摘要： Apparatus and systems that use phase-change memory devices are provided. The phase-change memory devices may include multiple phase-change memory cells and a reset pulse generation circuit configured to output multiple sequential reset pulses. Each sequential reset pulse is output to a corresponding one of multiple reset lines. Multiple write driver circuits are coupled to corresponding phase change memory cells and to a corresponding one of the reset lines of the reset pulse generation circuit.

摘要翻译： 提供了使用相变存储器件的装置和系统。 相变存储器件可以包括多个相变存储器单元和被配置为输出多个顺序复位脉冲的复位脉冲发生电路。 每个顺序复位脉冲被输出到多个复位线中相应的一个。 多个写入驱动器电路耦合到相应的相变存储器单元和复位脉冲发生电路的相应的一个复位线。

公开(公告)号：US08116117B2

公开(公告)日：2012-02-14

申请号：US12632018

申请日：2009-12-07

申请人： Woo-Yeong Cho ,  Ki-Sung Kim ,  Du-Eung Kim ,  Kwang-Jin Lee ,  Jun-Soo Bae

发明人： Woo-Yeong Cho ,  Ki-Sung Kim ,  Du-Eung Kim ,  Kwang-Jin Lee ,  Jun-Soo Bae

IPC分类号： G11C11/00

CPC分类号： G11C11/5678 ,  G11C7/04 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0078 ,  G11C2211/5634

摘要： Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, the intended resistance window depending on the resistance of reference cells, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.

摘要翻译： 公开了一种驱动多电平可变电阻存储器件的方法。 一种驱动多电平可变电阻存储器件的方法包括向可变电阻存储器单元提供写入电流，以便改变可变电阻存储器单元的电阻，验证改变的电阻是否进入预定电阻窗，预期电阻 窗口，取决于参考单元的电阻，并且基于验证结果从最近提供的写入电流提供具有增加或减少量的写入电流，以便改变可变电阻存储单元的电阻。

公开(公告)号：US08102704B2

公开(公告)日：2012-01-24

申请号：US12662247

申请日：2010-04-07

申请人： Kwang-Jin Lee ,  Yong-Jun Lee ,  Du-Eung Kim ,  Woo-Yeong Cho ,  Joon-Yong Choi

发明人： Kwang-Jin Lee ,  Yong-Jun Lee ,  Du-Eung Kim ,  Woo-Yeong Cho ,  Joon-Yong Choi

IPC分类号： G11C16/32

CPC分类号： G11C7/04 ,  G11C7/18 ,  G11C7/22 ,  G11C16/32 ,  G11C2207/002

摘要： Disclosed is a method of preventing coupling noises for a non-volatile semiconductor memory device. According to the method, if an edge of a write operation signal overlaps an activated period of a read operation signal a check result is generated. The write operation signal is modified based on the check result.

摘要翻译： 公开了一种防止用于非易失性半导体存储器件的耦合噪声的方法。 根据该方法，如果写入操作信号的边缘与读取操作信号的激活时段重叠，则产生检查结果。 基于检查结果修改写操作信号。

公开(公告)号：US08098518B2

公开(公告)日：2012-01-17

申请号：US12476875

申请日：2009-06-02

申请人： Hye-Jin Kim ,  Byung-Gil Choi ,  Du-Eung Kim

发明人： Hye-Jin Kim ,  Byung-Gil Choi ,  Du-Eung Kim

IPC分类号： G11C11/00

CPC分类号： G11C13/0023 ,  G11C8/10 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0026

摘要： A nonvolatile memory device may include a memory cell array with a plurality of nonvolatile memory cells arranged in an array of rows and columns. Each of a plurality of bit lines may be coupled to nonvolatile memory cells in a respective one of the columns of the array, and each of a plurality of column selection switches may be coupled to a respective one of the bit lines. A column decoder may be coupled to the plurality of column selection switches, and the column decoder may be configured to select a first one of the bit lines using a first column selection signal having a first signal level applied to a first one of the column selection switches. The column decoder may be further configured to select a second one of the bit lines using a second column selection signal having a second signal level applied to a second one of the column selection switches with the second signal level being different than the first signal level.

摘要翻译： 非易失性存储器件可以包括具有排列成行和列阵列的多个非易失性存储单元的存储单元阵列。 多个位线中的每一个可以耦合到阵列的各个列中的非易失性存储器单元，并且多个列选择开关中的每一个可以耦合到相应的一个位线。 列解码器可以耦合到多个列选择开关，并且列解码器可以被配置为使用具有施加到列选择中的第一个的第一信号电平的第一列选择信号来选择位线中的第一位 开关。 列解码器还可以被配置为使用具有第二信号电平的第二列选择信号来选择位线中的第二位，其中第二信号电平施加到第二信号电平不同于第一信号电平的列选择开关中的第二信号电平。

公开(公告)号：US08055305B2

公开(公告)日：2011-11-08

申请号：US11476631

申请日：2006-06-29

申请人： Sung-jung Cho ,  Hyun-jeong Lee ,  Joon-ah Park ,  Wook Chang ,  Kee-eung Kim

发明人： Sung-jung Cho ,  Hyun-jeong Lee ,  Joon-ah Park ,  Wook Chang ,  Kee-eung Kim

IPC分类号： H04B1/38 ,  H04M1/00 ,  G09G5/00

CPC分类号： G06F3/011 ,  G06F1/1626 ,  G06F1/1684 ,  G06F2200/1614 ,  G06F2200/1637

摘要： An apparatus for and a method of inputting a function of a mobile terminal such as a mobile phone, in which a grip posture of a user who holds the mobile terminal is recognized and a function corresponding to the recognized grip posture is detected. The method includes: recognizing a grip posture of a user who uses the mobile terminal; detecting a function corresponding to the recognized grip posture; and performing the detected function. Accordingly, by considering user's grip postures formed when performing the functions of a mobile terminal such as a mobile phone, specific functions are respectively matched to a plurality of grip postures, a grip posture of a user who is holding the mobile terminal is recognized, and a function corresponding to the recognized grip posture is automatically performed without any operation such as an additional key input operation. Therefore, a complex input unit or input method is not required even when diverse functions are provided by the mobile terminal, and the user can easily and conveniently use the mobile terminal.

摘要翻译： 一种用于输入诸如移动电话的移动终端的功能的装置和方法，其中识别出保持移动终端的用户的握持姿态并且检测到与所识别的抓取姿态相对应的功能。 该方法包括：识别使用移动终端的用户的握持姿态; 检测对应于所识别的手柄姿势的功能; 并执行检测到的功能。 因此，通过考虑在执行诸如移动电话的移动终端的功能时形成的用户的握持姿势，特定功能分别与多个握持姿态匹配，识别正在保持移动终端的用户的抓握姿态，以及 在没有任何附加的键输入操作的操作的情况下，自动执行与所识别的把手姿势对应的功能。 因此，即使移动终端提供多种功能，也不需要复杂的输入单元或输入方法，并且用户可以容易且方便地使用移动终端。