摘要:
A MP die with a redistribution layer (“RDL”) capture pad having at least one void therein and having an RDL capture pad outer peripheral edge and an under bump metal (“UBM”) pad positioned above the RDL capture pad and having a UBM pad outer peripheral edge positioned laterally inwardly of the RDL capture pad outer peripheral edge and positioned laterally outwardly of all the voids in the RDL capture pad.
摘要:
A WSP die having a redistribution layer (“RDL”) with an RDL capture pad that has an RDL pad central axis RR and a RDL pad outer peripheral edge arranged about the RDL capture pad central axis RR and an under bump metal (UBM) pad positioned above the RDL capture pad. The UBM pad has a UBM pad central axis UU and a UBM pad outer peripheral edge arranged around the UBM pad central axis UU. The UBM pad central axis UU is laterally offset from the RDL pad central axis RR.
摘要:
A millimeter wave integrated circuit (IC) chip. The IC chip comprises an IC die and a wire bond ball grid array package encapsulating the IC die. The wire bond ball grid array package comprises a solder ball array, a millimeter wave transmit channel, and a millimeter wave receive channel, wherein each millimeter wave transmit and receive channel electrically couples the IC die to a signal ball of the solder ball array and is configured to resonate at an operating frequency band of the millimeter wave IC chip.