-
公开(公告)号：US20090025639A1
公开(公告)日：2009-01-29
申请号：US11814913
申请日：2006-01-05
IPC分类号： C23C16/54
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.
摘要翻译： 本发明涉及一种用于具有腔室（4）的CVD反应器的气体入口元件（2），其具有多个底部侧出口（23），经由该腔室（4）经由边缘 （10）离开CVD反应器（1）的处理室（21）。 为了均化气体组成，本发明提供了至少一个混合室装置（11,12,13）位于进入开口（10）的上游，并且至少两个处理气体在该混合中彼此混合 室安排。
-
2.发明授权公开(公告)号：US06972050B2
公开(公告)日：2005-12-06
申请号：US10439195
申请日：2003-05-15
IPC分类号： C23C16/455 , C30B25/14 , H01L21/205 , C30B25/08
CPC分类号： C30B25/14 , C23C16/455
摘要： The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the process chamber, by means of separate delivery lines. The gas outlet areas lie one above the other between the floor of the process chamber and the cover of the process chamber and have different heights. The first reaction gas flows out of the gas outlet area that is situated next to the process chamber floor, optionally together with a carrier gas. A carrier gas is added at least to the second reaction gas, which flows out of the gas outlet area lying further away from the process chamber floor. The flow parameters are selected in such a way that the second reaction gas is essentially only pyrolytically decomposed in the inlet area and the products of decomposition diffuse crosswise to the direction of Dow of the gases to a substrate located on the process chamber floor, in a deposition area which is located downstream of the input area. Upon reaching said substrate, said products of decomposition condense to form a layer, together with products of decomposition of the first reaction layer. The invention aims to ensure that the decomposition of the organometallic products of decomposition takes place essentially only in the inlet area, even in the case of longer deposition areas, and to ensure that the partial pressures of the products of decomposition (depletion) in the gas phase above the deposition area maintain an essentially linear course. To this end, the invention provides that the kinematic viscosity of the carrier gas that is added to the second reaction gas is adjusted, especially by mixing two gases which differconsiderably in terms of their kinematic viscosity, in such a way that the quotient of Reynolds numbers in the two gas outlet areas is approximately one for essentially approximately identical average gas speeds.
-
3.发明授权公开(公告)号：US06905548B2
公开(公告)日：2005-06-14
申请号：US10378496
申请日：2003-03-03
CPC分类号： C23C16/45561 , C23C16/4401 , C30B25/02 , C30B25/14
摘要： The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.
摘要翻译： 本发明涉及一种用于特别沉积在一个或多个特别是同等结晶的基底上的结晶层的装置，其包括设置在反应器壳体中的处理室，该反应器壳体可以从上方装入基板，通过 反应器壳体开口，其可由盖子密封。 反应器壳体开口打开到手套箱中，特别是用高纯度气体冲洗并将电力，液体或气体供应管线连接到盖子上。 根据本发明，可以改善布置在手套箱外部的用于电力，流体或气体源的供给管线与布置在手套箱内的反应堆壳体的盖的连接，由此电力，流体或气体供应管线自由运行， 从手套箱的外部通过柔性管，该柔性管在一端被密封到刚性地固定到盖上并且在另一端被密封在手套箱壁中的开口的凸缘装置。
-
公开(公告)号：US09018105B2
公开(公告)日：2015-04-28
申请号：US13391609
申请日：2010-08-04
申请人： Gerhard Karl Strauch
发明人： Gerhard Karl Strauch
CPC分类号： C23C16/4412
摘要： The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates (21) contacting a susceptor (2), wherein process gases can be introduced into the process chamber (1) through flow channels (15, 16; 18) of a gas inlet organ (8), together with a carrier gas, said carrier gas permeating the process chamber (1) substantially parallel to the susceptor and exits through a gas outlet organ (7), wherein the products of decomposition build up the process gases as a coating at least in regions on the substrate surface and on the surface of the gas outlet organ (7) disposed downstream of the susceptor (2) at a distance (D) from the downstream edge (21) thereof. In order to deposit contamination-free layers in sequential process steps without intermediate replacement or intermediate cleaning of the gas outlet organ, according to the invention the distance (D) is great enough to prevent products of decomposition outgassing from the coating of the gas outlet organ (7) at the second process temperature from reaching the substrate (21) by counterflow diffusion.
摘要翻译： 本发明涉及一种用于沉积半导体层的器件和方法，特别是由一个或多个接触基座（2）的衬底（21）上的多个部件制成，其中工艺气体可被引入处理室（1） 通过气体入口器官（8）的流动通道（15,16; 18）与载气一起，所述载气渗透到处理室（1），基本上平行于基座并通过气体出口器（7）离开， 其中分解产物至少在衬底表面上的区域和位于基座（2）下游的气体出口器具（7）的表面上至少形成处理气体，距离（D）距离 下游边缘（21）。 为了在连续的工艺步骤中沉积无污染层，而不需要对气体出口器官进行中间的更换或中间清洁，根据本发明，距离（D）足够大以防止从气体出口器官的涂层分解出气的产物 （7）在第二工艺温度下通过逆流扩散到达衬底（21）。
-
公开(公告)号：US20120156396A1
公开(公告)日：2012-06-21
申请号：US13394040
申请日：2010-08-30
IPC分类号： C23C16/46 , C23C16/505 , C23C16/458
摘要： The invention relates to a CVD reactor comprising a heatable body (2, 3) disposed in a reactor housing, a heating device (4, 17) for heating the body (2, 3) located at a distance from the body (2, 3), and a cooling device (5, 18) located at a distance from the body (2, 3). The heatable body, the heating device, and the cooling device are arranged such that heat is transferred from the heating device (4, 17) across the space between the heating device (4, 17) and the body (2, 3) to the body (2, 3), and from the body (2, 3) across the space between the body (2, 3) and the cooling device (5, 18) to the cooling device (5, 18). In order to be able to affect the surface temperature of the heated process chamber walls in a locally reproducible manner, control bodies (6, 19) can be inserted into the space between the cooling and/or heating device (4, 5, 17, 18). During the thermal treatment or between sequential treatment steps, said bodies are displaced such that the heat transport is locally affected.
摘要翻译： 本发明涉及一种CVD反应器，其包括设置在反应器壳体中的可加热体（2,3），加热装置（4,17），用于加热位于与主体（2,3）相距一定距离的主体（2,3） ）和位于距离主体（2,3）一定距离处的冷却装置（5,18）。 可加热体，加热装置和冷却装置被布置成使得热量从加热装置（4,17）传递到加热装置（4,17）和主体（2,3）之间的空间 主体（2,3），并且从主体（2,3）穿过主体（2,3）和冷却装置（5,18）之间的空间连接到冷却装置（5,18）。 为了能够以局部可再现的方式影响加热的处理室壁的表面温度，可以将控制体（6,19）插入冷却和/或加热装置（4,5,17， 18）。 在热处理期间或在连续处理步骤之间，所述主体被移位，使得热传输局部受到影响。
-
公开(公告)号：US20120094474A1
公开(公告)日：2012-04-19
申请号：US13378340
申请日：2010-06-08
申请人： Gerhard Karl Strauch
发明人： Gerhard Karl Strauch
IPC分类号： H01L21/20 , C23C16/458 , C23C16/455
CPC分类号： C30B25/08 , C23C16/4404 , C23C16/52 , C30B35/00
摘要： The invention relates to a method for equipping a process chamber in an apparatus for depositing at least one layer on a substrate held by a susceptor in the process chamber, process gases being introduced into the process chamber through a gas inlet element, in particular by means of a carrier gas, the process gases decomposing into decomposition products in the chamber, in particular on hot surfaces, the decomposition products comprising the components that form the layer. In order to improve the apparatus so that thick multi-layer structures can be deposited reproducibly in process steps that follow one another directly, it is proposed that a material is selected for the surface facing the process chamber at least of the wall of the process chamber that is opposite the susceptor, the optical reflectivity, optical absorptivity and optical transmissivity of which respectively correspond to those of the layer to be deposited during the layer growth.
摘要翻译： 本发明涉及一种用于在处理室中装配处理室的方法，用于在处理室中由基座保持的基板上沉积至少一层，工艺气体通过气体入口元件被引入处理室，特别是通过装置 的载气，所述工艺气体在室内分解成分解产物，特别是在热表面上，所述分解产物包含形成该层的组分。 为了改进装置，使得厚的多层结构可以可再现地沉积在直接相互追随的工艺步骤中，因此提出了至少在处理室的壁上面向处理室的表面的材料被选择 与感光体相对，光学反射率，光吸收率和光透射率分别对应于层生长期间要沉积的层的光学反射率。
-
7.发明申请Process And Apparatus For Depositing Semiconductor Layers Using Two Process Gases, One Of Which is Preconditioned 审中-公开用于使用两种工艺气体沉积半导体层的工艺和装置，其中一种是预处理的公开(公告)号：US20100012034A1
公开(公告)日：2010-01-21
申请号：US12567357
申请日：2009-09-25
IPC分类号： C23C16/513 , C23C16/46
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45574 , Y10S438/905
摘要： A method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder, is provided. The layer includes of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy.
摘要翻译： 提供了一种用于将至少一层，特别是半导体层沉积在至少一个衬底上的方法和装置，所述至少一个衬底位于反应器的处理室内，同时由衬底保持器支撑。 该层包括以固定化学计量比提供的至少两种材料组分，其以第一和第二反应气体的形式引入反应器中，并且一部分分解产物形成该层，由此， 具有低热活化能的第一反应气体确定了该层的生长速率，并且具有高热活化能的第二反应气体被过量供应并且被预处理，特别是通过独立供应 的能量。
-
8.发明申请Process for Depositing Thin Layers on a Substrate in a Process Chamber of Adjustable Height 审中-公开在可调节高度的工艺室中的基板上沉积薄层的方法公开(公告)号：US20090178620A1
公开(公告)日：2009-07-16
申请号：US12411131
申请日：2009-03-25
IPC分类号： C23C16/54
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45589 , C23C16/4585 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： An apparatus for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The height of the process chamber is variable before the beginning of the deposition process and/or during the deposition process, which height is defined by the distance between the substrate bearing surface and the gas exit surface.
摘要翻译： 一种用于在布置在反应器壳体中的处理室中的衬底上沉积薄层的装置，所述处理室的底部由可围绕其垂直轴线可旋转地驱动的可调节衬底保持器和由所述腔室的盖组成， 进气口元件 盖子平行于底部延伸并与其排列成筛子式的气体出口一起形成气体出口表面，该表面在衬底保持器的整个衬底承载表面上延伸，处理气体通过 气体出口表面。 处理室的高度在沉积过程开始之前和/或沉积过程中是可变的，该高度由衬底承载表面和气体出口表面之间的距离限定。
-
公开(公告)号：US20080069953A1
公开(公告)日：2008-03-20
申请号：US10591906
申请日：2006-08-28
IPC分类号： C23C16/00
CPC分类号： C23C16/45568 , C30B25/14 , C30B29/40
摘要： The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.
摘要翻译： 本发明涉及用于在处理室中的至少一个特别结晶的衬底上沉积特别是结晶层的器件，该器件包括用于接收衬底的顶部和垂直相对的加热底部。 使用形成垂直叠加的气体导纳区域的气体导纳体分别引入至少一种第一和第二气态原料，所述原料在水平方向上以载气流过处理室。 在气体导纳体的直接区域的导纳区域，气体流动均匀化，起始材料至少部分分解，形成在与导纳区域相邻的生长区域内沉积在基板上的分解物，在连续耗尽 气流。 为了减小导纳区域的水平延伸，气体导纳体的另外的气体导纳区域对于两种起始材料之一是必不可少的。
-
公开(公告)号：US07067012B2
公开(公告)日：2006-06-27
申请号：US10378494
申请日：2003-03-03
CPC分类号： C30B25/12 , C23C16/4584
摘要： The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.
-
-
-
-
-
-
-
-
-
搜索结果
27 条记录 (耗时 0.017 秒)
