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    Method of fabricating microlens, and depth sensor including microlens
    2.
    发明授权
    Method of fabricating microlens, and depth sensor including microlens 有权
    微透镜的制造方法，以及微透镜的深度传感器

    公开(公告)号：US09029785B2

    公开(公告)日：2015-05-12

    申请号：US13407879

    申请日：2012-02-29

    申请人： Doo Cheol Park ,  Seung Hyuk Chang ,  Myung-Sun Kim ,  Won Joo Kim ,  Ju Hwan Jung ,  Seung Hoon Lee ,  Kwang-Min Lee ,  Hyoung Soo Ko

    发明人： Doo Cheol Park ,  Seung Hyuk Chang ,  Myung-Sun Kim ,  Won Joo Kim ,  Ju Hwan Jung ,  Seung Hoon Lee ,  Kwang-Min Lee ,  Hyoung Soo Ko

    IPC分类号： G02B13/00 ,  G02B3/00 ,  G02B13/14 ,  G03F7/40 ,  G02B23/14

    CPC分类号： G02B3/0018 ,  G02B3/0056 ,  G02B13/14 ,  G02B23/14 ,  G03F7/40

    摘要： A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.

    摘要翻译： 制造微透镜的方法包括在衬底上形成光致抗蚀剂层，图案化光致抗蚀剂层，然后回流光致抗蚀剂图案。 通过用粘度为150至250cp的液体光致抗蚀剂涂覆基底来形成光致抗蚀剂层。 深度传感器包括基板和在基板的上部的光电转换元件，设置在基板上的金属布线部分，用于将入射光聚焦到光电转换元件上的微透镜阵列，并且这些光束避免了布线 金属配线部。 深度传感器还包括呈现其上形成有微透镜的平坦上表面的层。 该层可以是介于微透镜和金属布线部之间的专用平坦化层或IR滤光器。

    Apparatus comprising substrate and conductive layer
    3.
    发明授权
    Apparatus comprising substrate and conductive layer 有权
    装置包括基底和导电层

    公开(公告)号：US08523555B2

    公开(公告)日：2013-09-03

    申请号：US13621204

    申请日：2012-09-15

    申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

    发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

    IPC分类号： B29C59/00

    CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

    摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

    摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

    THREE-DIMENSIONAL COLOR IMAGE SENSORS HAVING SPACED-APART MULTI-PIXEL COLOR REGIONS THEREIN
    5.
    发明申请
    THREE-DIMENSIONAL COLOR IMAGE SENSORS HAVING SPACED-APART MULTI-PIXEL COLOR REGIONS THEREIN 审中-公开
    三维彩色图像传感器，其间隔多个像素颜色区域

    公开(公告)号：US20120268566A1

    公开(公告)日：2012-10-25

    申请号：US13450761

    申请日：2012-04-19

    申请人： Won-Joo Kim ,  Yoon-Dong Park ,  Hyoung-Soo Ko

    发明人： Won-Joo Kim ,  Yoon-Dong Park ,  Hyoung-Soo Ko

    IPC分类号： H04N13/02

    CPC分类号： H04N5/3745 ,  H04N5/3696 ,  H04N9/045 ,  H04N13/254

    摘要： A three-dimensional color image sensor includes color pixels and depth pixels therein. A semiconductor substrate is provided with a depth region therein, which extends adjacent a surface of the semiconductor substrate. A two-dimensional array of spaced-apart color regions are provided within the depth region. Each of the color regions includes a plurality of different color pixels therein (e.g., red, blue and green pixels) and each of the color pixels within each of the spaced-apart color regions are spaced-apart from all other color pixels within other color regions.

    摘要翻译： 三维彩色图像传感器包括其中的彩色像素和深度像素。 半导体衬底在其中设置有深度区域，其在半导体衬底的表面附近延伸。 在深度区域内设置间隔开的彩色区域的二维阵列。 每个颜色区域在其中包括多个不同的颜色像素（例如，红色，蓝色和绿色像素），并且每个间隔开的颜色区域内的每个彩色像素与其他颜色内的所有其他颜色像素间隔开 地区。

    METHOD OF FABRICATING MICROLENS, AND DEPTH SENSOR INCLUDING MICROLENS
    6.
    发明申请
    METHOD OF FABRICATING MICROLENS, AND DEPTH SENSOR INCLUDING MICROLENS 有权
    微生物的制备方法，以及包含微生物的深度传感器

    公开(公告)号：US20120224028A1

    公开(公告)日：2012-09-06

    申请号：US13407879

    申请日：2012-02-29

    申请人： DOO CHEOL PARK ,  SEUNG HYUK CHANG ,  MYUNG-SUN KIM ,  WON JOO KIM ,  JU HWAN JUNG ,  SEUNG HOON LEE ,  KWANG-MIN LEE ,  HYOUNG SOO KO

    发明人： DOO CHEOL PARK ,  SEUNG HYUK CHANG ,  MYUNG-SUN KIM ,  WON JOO KIM ,  JU HWAN JUNG ,  SEUNG HOON LEE ,  KWANG-MIN LEE ,  HYOUNG SOO KO

    IPC分类号： H04N15/00 ,  G03F7/20 ,  G02B13/14 ,  H01J40/14 ,  G02B3/00

    CPC分类号： G02B3/0018 ,  G02B3/0056 ,  G02B13/14 ,  G02B23/14 ,  G03F7/40

    摘要： A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.

    摘要翻译： 制造微透镜的方法包括在衬底上形成光致抗蚀剂层，图案化光致抗蚀剂层，然后回流光致抗蚀剂图案。 通过用粘度为150至250cp的液体光致抗蚀剂涂覆基底来形成光致抗蚀剂层。 深度传感器包括基板和在基板的上部的光电转换元件，设置在基板上的金属布线部分，用于将入射光聚焦到光电转换元件上的微透镜阵列，并且这些光束避免了布线 金属配线部。 深度传感器还包括呈现其上形成有微透镜的平坦上表面的层。 该层可以是介于微透镜和金属布线部之间的专用平坦化层或IR滤光器。

    Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the same
    8.
    发明授权
    Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the same 失效
    使用电场的读/写头，包括其的数据读/写装置及其制造方法

    公开(公告)号：US07885170B2

    公开(公告)日：2011-02-08

    申请号：US12142048

    申请日：2008-06-19

    申请人： Chul-min Park ,  Ju-hwan Jung ,  Hyoung-soo Ko

    发明人： Chul-min Park ,  Ju-hwan Jung ,  Hyoung-soo Ko

    IPC分类号： G11B7/00

    CPC分类号： G11B9/02 ,  G11B5/3173

    摘要： A data reading/writing head reading/writing data from/to a ferroelectric recording medium by using an electric field effect, includes a semiconductor body having a first plane on which an air bearing pattern is formed and a second plane crossing the first plane. A sensing unit is located on the second plane and reads data written to the ferroelectric recording medium, wherein the second plane is separated from the first plane, and a floating gate is disposed on the sensing unit, wherein an end of the floating gate extends to the first plane to guide an electric field from the ferroelectric recording medium to the sensing unit.

    摘要翻译： 通过使用电场效应从/向铁电记录介质读取/写入数据的数据读/写头包括半导体本体，其具有形成有空气轴承图案的第一平面和与第一平面交叉的第二平面。 感测单元位于第二平面上并读取写入铁电记录介质的数据，其中第二平面与第一平面分离，并且浮动栅极设置在感测单元上，其中浮动栅极的一端延伸到 引导从铁电记录介质到感测单元的电场的第一平面。

    Method of improving sensitivity of electric field sensor, storage apparatus including electric field sensor, and method of reproducing information of the storage apparatus
    9.
    发明授权
    Method of improving sensitivity of electric field sensor, storage apparatus including electric field sensor, and method of reproducing information of the storage apparatus 失效
    提高电场传感器的灵敏度的方法，包括电场传感器的存储装置以及再现存储装置的信息的方法

    公开(公告)号：US07852738B2

    公开(公告)日：2010-12-14

    申请号：US11965836

    申请日：2007-12-28

    申请人： Dae-young Jeon ,  Dong-ki Min ,  Hyoung-soo Ko ,  Seung-bum Hong

    发明人： Dae-young Jeon ,  Dong-ki Min ,  Hyoung-soo Ko ,  Seung-bum Hong

    IPC分类号： G11B9/00

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： A storage apparatus includes a ferroelectric recording medium, an electric field sensor including a source region, a drain region and a resistance region electrically connecting the source region to the drain region and having a resistance, which varies according to an intensity of an electric field due to a polarization voltage of an electric domain of the recording medium, a voltage applying unit applying a drain voltage between the source region and the drain region, and a reproducing signal detection unit including at least one negative resistor installed in an electric circuit connecting the drain region to the voltage applying unit, and detecting a change in a voltage between the drain region and the at least one negative resistor.

    摘要翻译： 存储装置包括铁电记录介质，电场传感器，其包括源极区域，漏极区域和将源极区域电连接到漏极区域并具有电阻的电阻区域，该电阻器根据电场的强度而变化 至所述记录介质的电畴的极化电压，在所述源极区域和所述漏极区域之间施加漏极电压的电压施加单元，以及再现信号检测单元，所述再现信号检测单元包括安装在连接所述漏极 区域，并且检测漏极区域和至少一个负电阻器之间的电压变化。

    Ferroelectric recording medium and writing method for the same
    10.
    发明授权
    Ferroelectric recording medium and writing method for the same 失效
    铁电记录介质和写入方法相同

    公开(公告)号：US07820311B2

    公开(公告)日：2010-10-26

    申请号：US11348485

    申请日：2006-02-07

    申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G11B5/64

    CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

    摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

    摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。