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162 条记录 (耗时 0.024 秒)

    Non-volatile memory devices having data storage layer
    3.
    发明授权
    Non-volatile memory devices having data storage layer 有权
    具有数据存储层的非易失性存储器件

    公开(公告)号：US08283711B2

    公开(公告)日：2012-10-09

    申请号：US12149209

    申请日：2008-04-29

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

    IPC分类号： H01L29/792

    CPC分类号： G11C5/02 ,  G11C5/025 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

    摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.

    摘要翻译： 提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。 非易失性存储器件可以包括至少一对第一电极线。 至少一个第二电极线可以在所述至少一对第一电极线之间。 至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

    Nonvolatile memory devices and methods of fabricating the same
    5.
    发明授权
    Nonvolatile memory devices and methods of fabricating the same 失效
    非易失性存储器件及其制造方法

    公开(公告)号：US08017477B2

    公开(公告)日：2011-09-13

    申请号：US11704205

    申请日：2007-02-09

    申请人： Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park

    IPC分类号： H01L21/336

    CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42332 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/66621 ,  H01L29/7881 ,  H01L29/792

    摘要： A nonvolatile memory device includes a plurality of first control gate electrodes, second control gate electrodes, first storage node films, and second storage node films. The first control gate electrodes are recessed into a semiconductor substrate. Each second control gate electrode is disposed between two adjacent first control gate electrodes. The second control gate electrodes are disposed on the semiconductor substrate over the first control gate electrodes. The first storage node films are disposed between the semiconductor substrate and the first control gate electrodes. The second storage node films are disposed between the semiconductor substrate and the second control gate electrodes. A method of fabricating the nonvolatile memory device includes forming the first storage node films, forming the first control gate electrodes, forming the second storage node films, and forming the second control gate electrodes.

    摘要翻译： 非易失性存储器件包括多个第一控制栅电极，第二控制栅电极，第一存储节点膜和第二存储节点膜。 第一控制栅电极凹入半导体衬底。 每个第二控制栅电极设置在两个相邻的第一控制栅电极之间。 第二控制栅电极设置在第一控制栅电极上的半导体衬底上。 第一存储节点膜设置在半导体衬底和第一控制栅电极之间。 第二存储节点膜设置在半导体衬底和第二控制栅电极之间。 一种制造非易失性存储器件的方法包括形成第一存储节点膜，形成第一控制栅电极，形成第二存储节点膜，以及形成第二控制栅电极。

    Semiconductor device having a pair of fins and method of manufacturing the same
    7.
    发明授权
    Semiconductor device having a pair of fins and method of manufacturing the same 失效
    具有一对翅片的半导体器件及其制造方法

    公开(公告)号：US07833890B2

    公开(公告)日：2010-11-16

    申请号：US12457366

    申请日：2009-06-09

    申请人： Won-joo Kim ,  June-mo Koo ,  Seung-hwan Song ,  Suk-pil Kim ,  Yoon-dong Park ,  Jong-jin Lee

    发明人： Won-joo Kim ,  June-mo Koo ,  Seung-hwan Song ,  Suk-pil Kim ,  Yoon-dong Park ,  Jong-jin Lee

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/28273 ,  H01L21/28282 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/785 ,  H01L29/7881 ,  H01L29/792

    摘要： Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.

    摘要翻译： 示例性实施例涉及半导体器件及其制造方法。 根据示例实施例的半导体器件可以在读取操作期间具有减小的干扰，并且减少短信道效应。 半导体器件可以包括具有主体和从主体突出的一对鳍片的半导体衬底。 可以在一对翅片的内侧壁的上部形成内隔离层绝缘层，以减少对一对翅片之间的区域的入口。 栅极电极可以覆盖一对鳍片的外部侧壁的一部分，并且可以跨越内部间隔物绝缘层延伸，以便在一对鳍片之间限定空隙。 栅绝缘层可以插入在栅电极和一对鳍之间。

    Wire-type semiconductor devices and methods of fabricating the same
    9.
    发明授权
    Wire-type semiconductor devices and methods of fabricating the same 有权
    线型半导体器件及其制造方法

    公开(公告)号：US07663166B2

    公开(公告)日：2010-02-16

    申请号：US11723074

    申请日：2007-03-16

    申请人： Suk-Pil Kim ,  Yoon-Dong Park ,  Won-Joo Kim

    发明人： Suk-Pil Kim ,  Yoon-Dong Park ,  Won-Joo Kim

    IPC分类号： H01L27/088

    CPC分类号： H01L29/0657 ,  H01L29/42392 ,  H01L29/78696

    摘要： Provided are relatively higher-performance wire-type semiconductor devices and relatively economical methods of fabricating the same. A wire-type semiconductor device may include at least one pair of support pillars protruding above a semiconductor substrate, at least one fin protruding above the semiconductor substrate and having ends connected to the at least one pair of support pillars, at least one semiconductor wire having ends connected to the at least one pair of support pillars and being separated from the at least one fin, a common gate electrode surrounding the surface of the at least one semiconductor wire, and a gate insulating layer between the at least one semiconductor wire and the common gate electrode.

    摘要翻译： 提供了相对较高性能的线型半导体器件和相对经济的制造方法。 线型半导体器件可以包括突出在半导体衬底上方的至少一对支撑柱，至少一个突出于半导体衬底之上并具有连接到至少一对支撑柱的端子的鳍片，至少一个半导体线材具有 连接到所述至少一对支撑柱并且与所述至少一个鳍分离的端部，围绕所述至少一个半导体线的表面的公共栅电极以及所述至少一个半导体线和所述至少一个半导体线之间的栅极绝缘层 共栅电极。

    NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME
    10.
    发明申请
    NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
    非易失性存储器件及其操作方法

    公开(公告)号：US20100027316A1

    公开(公告)日：2010-02-04

    申请号：US12465125

    申请日：2009-05-13

    申请人： TAE-EUNG YOON ,  Won-joo Kim ,  June-mo Koo ,  Suk-pil Kim ,  Tae-hee Lee

    发明人： TAE-EUNG YOON ,  Won-joo Kim ,  June-mo Koo ,  Suk-pil Kim ,  Tae-hee Lee

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C8/14 ,  G11C5/02 ,  G11C5/025

    摘要： A non-volatile memory device having a stack structure, and a method of operating the non-volatile memory device In which the non-volatile memory device includes a plurality of variable resistors arranged in at least one layer. At least one layer selection bit line and a plurality of bit lines coupled to the plurality of the variable resistors are provided. A plurality of selection transistors coupled between the plurality of the bit lines and the plurality of the variable resistors are provided.

    摘要翻译： 具有堆叠结构的非易失性存储器件以及操作非易失性存储器件的方法其中非易失性存储器件包括布置在至少一层中的多个可变电阻器。 提供耦合到多个可变电阻器的至少一个层选择位线和多个位线。 提供耦合在多个位线和多个可变电阻器之间的多个选择晶体管。