公开(公告)号：US20160037094A1

公开(公告)日：2016-02-04

申请号：US14883453

申请日：2015-10-14

申请人： Seung-Hyuk CHANG ,  Yoon-Dong PARK ,  Yong-Jei LEE

发明人： Seung-Hyuk CHANG ,  Yoon-Dong PARK ,  Yong-Jei LEE

IPC分类号： H04N5/351 ,  G01S17/06 ,  G01S7/481

CPC分类号： H04N5/351 ,  G01S7/4811 ,  G01S17/06 ,  H04N5/2256 ,  H04N13/254 ,  H04N13/271

摘要： A method of operating a three-dimensional image sensor may include: obtaining position information of an object using light emitted by a light source module, the three-dimensional image sensor including the light source module having a light source and a lens; and adjusting a relative position of the light source to the lens based on the obtained position information of the object. A method of operating an image sensor may include: obtaining position information of an object using light emitted by a light source module, the image sensor including the light source module; and adjusting an emission angle of the light emitted by the light source module based on the obtained position information.

摘要翻译： 操作三维图像传感器的方法可以包括：使用由光源模块发射的光获得对象的位置信息，所述三维图像传感器包括具有光源和透镜的光源模块; 以及基于获得的物体的位置信息来调整光源与透镜的相对位置。 操作图像传感器的方法可以包括：使用由光源模块发射的光获得对象的位置信息，所述图像传感器包括光源模块; 以及基于所获得的位置信息来调整由所述光源模块发射的光的发射角。

公开(公告)号：US09029785B2

公开(公告)日：2015-05-12

申请号：US13407879

申请日：2012-02-29

申请人： Doo Cheol Park ,  Seung Hyuk Chang ,  Myung-Sun Kim ,  Won Joo Kim ,  Ju Hwan Jung ,  Seung Hoon Lee ,  Kwang-Min Lee ,  Hyoung Soo Ko

发明人： Doo Cheol Park ,  Seung Hyuk Chang ,  Myung-Sun Kim ,  Won Joo Kim ,  Ju Hwan Jung ,  Seung Hoon Lee ,  Kwang-Min Lee ,  Hyoung Soo Ko

IPC分类号： G02B13/00 ,  G02B3/00 ,  G02B13/14 ,  G03F7/40 ,  G02B23/14

CPC分类号： G02B3/0018 ,  G02B3/0056 ,  G02B13/14 ,  G02B23/14 ,  G03F7/40

摘要： A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.

摘要翻译： 制造微透镜的方法包括在衬底上形成光致抗蚀剂层，图案化光致抗蚀剂层，然后回流光致抗蚀剂图案。 通过用粘度为150至250cp的液体光致抗蚀剂涂覆基底来形成光致抗蚀剂层。 深度传感器包括基板和在基板的上部的光电转换元件，设置在基板上的金属布线部分，用于将入射光聚焦到光电转换元件上的微透镜阵列，并且这些光束避免了布线 金属配线部。 深度传感器还包括呈现其上形成有微透镜的平坦上表面的层。 该层可以是介于微透镜和金属布线部之间的专用平坦化层或IR滤光器。

公开(公告)号：US20120224028A1

公开(公告)日：2012-09-06

申请号：US13407879

申请日：2012-02-29

申请人： DOO CHEOL PARK ,  SEUNG HYUK CHANG ,  MYUNG-SUN KIM ,  WON JOO KIM ,  JU HWAN JUNG ,  SEUNG HOON LEE ,  KWANG-MIN LEE ,  HYOUNG SOO KO

发明人： DOO CHEOL PARK ,  SEUNG HYUK CHANG ,  MYUNG-SUN KIM ,  WON JOO KIM ,  JU HWAN JUNG ,  SEUNG HOON LEE ,  KWANG-MIN LEE ,  HYOUNG SOO KO

IPC分类号： H04N15/00 ,  G03F7/20 ,  G02B13/14 ,  H01J40/14 ,  G02B3/00

CPC分类号： G02B3/0018 ,  G02B3/0056 ,  G02B13/14 ,  G02B23/14 ,  G03F7/40

摘要： A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.

摘要翻译： 制造微透镜的方法包括在衬底上形成光致抗蚀剂层，图案化光致抗蚀剂层，然后回流光致抗蚀剂图案。 通过用粘度为150至250cp的液体光致抗蚀剂涂覆基底来形成光致抗蚀剂层。 深度传感器包括基板和在基板的上部的光电转换元件，设置在基板上的金属布线部分，用于将入射光聚焦到光电转换元件上的微透镜阵列，并且这些光束避免了布线 金属配线部。 深度传感器还包括呈现其上形成有微透镜的平坦上表面的层。 该层可以是介于微透镜和金属布线部之间的专用平坦化层或IR滤光器。

公开(公告)号：US07535049B2

公开(公告)日：2009-05-19

申请号：US11249393

申请日：2005-10-14

申请人： Won-joo Kim ,  Yoon-dong Park ,  Eun-hong Lee ,  Sun-ae Seo ,  Sang-min Shin ,  Jung-hoon Lee ,  Seung-hyuk Chang

发明人： Won-joo Kim ,  Yoon-dong Park ,  Eun-hong Lee ,  Sun-ae Seo ,  Sang-min Shin ,  Jung-hoon Lee ,  Seung-hyuk Chang

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： G11C11/5621 ,  B82Y10/00 ,  G11C11/5607 ,  G11C11/5628 ,  G11C11/5657 ,  G11C13/025 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/28291 ,  H01L29/0692 ,  H01L29/4232 ,  H01L29/7923

摘要： A multi bits flash memory device and a method of operating the same are disclosed. The multi bits flash memory device includes: a stacked structure including: a first active layer with a mesa-like form disposed on a substrate; a second active layer, having a different conductivity type from the first active layer, formed on the first active layer; an active interlayer isolation layer interposed between the first active layer and the second active layer such that the first active layer is electrically isolated from the second active layer; a common source and a common drain formed on a pair of opposite side surfaces of the stacked structure; a common first gate and a common second gate formed on the other pair of opposite side surfaces of the stacked structure; a tunnel dielectric layer interposed between the first and second gates and the first and second active layers; and a charge trap layer, storing charges that tunnel through the tunnel dielectric layer, interposed between the tunnel dielectric layer and the first and second gates.

摘要翻译： 公开了一种多位闪存器件及其操作方法。 多位闪存器件包括：堆叠结构，包括：设置在衬底上的具有台面状形状的第一有源层; 形成在所述第一有源层上的与所述第一有源层不同的导电类型的第二有源层; 插入在第一有源层和第二有源层之间的有源层间隔离层，使得第一有源层与第二有源层电隔离; 形成在所述堆叠结构的一对相对侧表面上的共同源极和共同漏极; 形成在所述堆叠结构的另一对相对侧表面上的公共第一栅极和公共第二栅极; 介于所述第一和第二栅极与所述第一和第二有源层之间的隧道介电层; 以及电荷捕获层，其存储穿过隧道介电层的电荷，介于隧道介电层和第一和第二栅极之间。

公开(公告)号：US20070031741A1

公开(公告)日：2007-02-08

申请号：US11498020

申请日：2006-08-03

申请人： Hoon Kim ,  Suk-pil Kim ,  I-hun Song ,  Young-soo Park ,  Seung-hyuk Chang

发明人： Hoon Kim ,  Suk-pil Kim ,  I-hun Song ,  Young-soo Park ,  Seung-hyuk Chang

IPC分类号： G02B5/20 ,  F21V9/06 ,  F21V9/04 ,  G21K5/00 ,  G03F1/00 ,  G02B5/08

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70316 ,  G03F7/70958 ,  G21K1/062

摘要： A reflection device that may include a substrate and a multi-reflection layer formed on the substrate. The multi-reflection layer may be formed of a material capable of reflecting EUV rays. The multi-reflection layer may be formed by stacking a plurality of layer groups, each including a first material layer, a surface-treated layer obtained by surface-treating the first material layer, and a second material layer formed on the surface-treated layer. A method of fabricating the reflection device that may include preparing a substrate and forming a multi-reflection layer on the substrate from a material capable of reflecting EUV rays. The forming of the multi-reflection layer may be performed by repeatedly forming a layer group. The forming of the layer group may include forming a first material layer, surface-treating the first material layer, and forming a second material layer on the surface-treated first material layer.

摘要翻译： 可以包括形成在基板上的基板和多反射层的反射装置。 多反射层可以由能够反射EUV射线的材料形成。 多反射层可以通过层叠多个层组而形成，每个层组包括第一材料层，通过表面处理第一材料层获得的表面处理层和形成在表面处理层上的第二材料层 。 一种制造反射装置的方法，其可以包括准备基板并且在能够反射EUV射线的材料的基板上形成多反射层。 多反射层的形成可以通过重复形成层组来进行。 层组的形成可以包括形成第一材料层，对第一材料层进行表面处理，以及在表面处理的第一材料层上形成第二材料层。

公开(公告)号：US20060141370A1

公开(公告)日：2006-06-29

申请号：US11319725

申请日：2005-12-29

申请人： Suk-Pil Kim ,  I-Hun Song ,  Won-Joo Kim ,  Seung-Hyuk Chang ,  Hoon Kim

发明人： Suk-Pil Kim ,  I-Hun Song ,  Won-Joo Kim ,  Seung-Hyuk Chang ,  Hoon Kim

IPC分类号： G21G5/00 ,  A61N5/00 ,  G21K5/00 ,  G03F1/00

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/22 ,  G03F1/24 ,  G21K2201/067

摘要： A photomask may include a reflection layer including a material capable of reflecting electromagnetic radiation, and at least one ion region. The ion region may be formed by implanting ions of an absorbent capable of absorbing electromagnetic radiation. The reflection layer may have a stack structure including a plurality of layers. The ions of the dopant may be implanted into at least one of the plurality of layers.

摘要翻译： 光掩模可以包括包括能够反射电磁辐射的材料的反射层和至少一个离子区域。 可以通过注入能够吸收电磁辐射的吸收剂的离子形成离子区域。 反射层可以具有包括多个层的堆叠结构。 掺杂剂的离子可以注入到多个层中的至少一个层中。

公开(公告)号：US08148762B2

公开(公告)日：2012-04-03

申请号：US12216556

申请日：2008-07-08

申请人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

发明人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

IPC分类号： H01L31/062

CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L31/02165

摘要： Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

摘要翻译： 提供了光电二极管，图像感测装置和图像传感器。 图像感测装置包括在其上表面上具有金属图案层的p-n结光电二极管。 图像传感器包括图像感测装置和形成在金属图案层上方的微透镜。 金属图案层对具有第一波长的光进行滤光。

公开(公告)号：US20100033611A1

公开(公告)日：2010-02-11

申请号：US12461063

申请日：2009-07-30

申请人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang ,  Dae-kil Cha

发明人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang ,  Dae-kil Cha

IPC分类号： H04N13/02

CPC分类号： H01L27/14645 ,  H01L27/14641 ,  H04N5/332 ,  H04N5/3696 ,  H04N5/37457 ,  H04N13/229 ,  H04N13/257

摘要： Provided is a pixel array of a three-dimensional image sensor. The pixel array includes unit pixel patterns each including a color pixel and a distance-measuring pixel arranged in an array form. The unit pixel patterns are arranged in such a way that a group of distance-measuring pixels are disposed adjacent to each other.

摘要翻译： 提供了三维图像传感器的像素阵列。 像素阵列包括各自包括以阵列形式布置的彩色像素和距离测量像素的单位像素图案。 单位像素图案被布置成使得一组距离测量像素彼此相邻地布置。

公开(公告)号：US20070285798A1

公开(公告)日：2007-12-13

申请号：US11889511

申请日：2007-08-14

申请人： Seung-Hyuk Chang ,  I-Hun Song ,  Won-Joo Kim ,  Suk-Pil Kim ,  Hoon Kim

发明人： Seung-Hyuk Chang ,  I-Hun Song ,  Won-Joo Kim ,  Suk-Pil Kim ,  Hoon Kim

IPC分类号： G02B9/00 ,  B01J19/08 ,  G03F7/20

CPC分类号： G03F7/70233

摘要： Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢   ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢   ⁢ i 2 .

公开(公告)号：US07301694B2

公开(公告)日：2007-11-27

申请号：US11453775

申请日：2006-06-16

申请人： Seung-Hyuk Chang ,  I-Hun Song ,  Young-Soo Park ,  Suk-Pil Kim ,  Hoon Kim

发明人： Seung-Hyuk Chang ,  I-Hun Song ,  Young-Soo Park ,  Suk-Pil Kim ,  Hoon Kim

IPC分类号： G02B5/08

CPC分类号： G03F7/70241 ,  G03F7/70941

摘要： Example embodiments are directed to an off-axis projection optical system including first and second mirrors that are off-axially arranged. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2.

摘要翻译： 示例性实施例涉及一种离轴投影光学系统，其包括非轴向布置的第一和第二反射镜。 第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。 第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。 从物点到第一反射镜10的光束的入射角度可以为1＆lt; 1＆gt;，从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1，R 1，R 2，R 2，R 2，R 1，R 2， SUB>和i <2>可以满足以下等式<？in-line-formula description =“In-line Formulas”end =“lead”？> R 1t cos α-in-line-formula description =“In-line Formulas”end =“tail”？> R＆lt; 1s＆lt; 1＆lt; 1＆lt; 1＆lt; i <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”R 2s 2 = R 2t 2＆lt; 2＆lt; 2＆lt; 2＆lt;＆lt;行内公式描述= “直线公式”end =“tail”？>