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7 条记录 (耗时 0.011 秒)

    Method of fabricating a buried collar
    1.
    发明授权
    Method of fabricating a buried collar 失效
    埋地衣领的制作方法

    公开(公告)号：US06838334B1

    公开(公告)日：2005-01-04

    申请号：US10604562

    申请日：2003-07-30

    申请人： Oleg Gluschenkov ,  Chung-Yung Sung ,  Helmut H. Tews

    发明人： Oleg Gluschenkov ,  Chung-Yung Sung ,  Helmut H. Tews

    IPC分类号： H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242

    CPC分类号： H01L27/10867 ,  H01L21/31144 ,  H01L21/3144 ,  H01L21/31662 ,  H01L27/10864 ,  H01L27/1087

    摘要： A method of forming a buried collar on the sidewall of a trench in a semiconductor substrate including: (a) providing the trench in the semiconductor substrate, the trench having a first dielectric layer formed on a sidewall in a upper region of the trench and a conductive material filling a lower region of the trench, the conductive material covering a lower portion of the first dielectric layer; (b) removing the first dielectric layer not covered by the conductive material; (c) forming a second dielectric layer on the exposed sidewall of the upper region and on a top surface of the conductive material; (d) removing an uppermost portion of the second dielectric layer from the sidewall in the upper region; (e) forming a third dielectric layer on the exposed sidewall of the upper region; and (f) increasing the thickness of the second dielectric layer to form the buried collar.

    Orientation independent oxidation of nitrided silicon
    5.
    发明授权
    Orientation independent oxidation of nitrided silicon 失效
    氮化硅的取向独立氧化

    公开(公告)号：US06727142B1

    公开(公告)日：2004-04-27

    申请号：US10284508

    申请日：2002-10-29

    申请人： Oleg Gluschenkov ,  Suryanarayan G. Hegde ,  Helmut H. Tews

    发明人： Oleg Gluschenkov ,  Suryanarayan G. Hegde ,  Helmut H. Tews

    IPC分类号： H01L2126

    CPC分类号： H01L21/02332 ,  H01L21/02247 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/32105

    摘要： Forming a vertical MOS transistor or making another three-dimensional integrated circuit structure in a silicon wafer exposes planes having at least two different crystallographic orientations. Growing oxide on different crystal planes is inherently at different growth rates because the inter-atomic spacing is different in the different planes. Heating the silicon in a nitrogen-containing ambient to form a thin layer of nitride and then growing the oxide through the thin nitrided layer reduces the difference in oxide thickness to less than 1%.

    摘要翻译： 形成垂直MOS晶体管或在硅晶片中制造另一三维集成电路结构暴露具有至少两个不同晶体取向的平面。 不同晶面上生长的氧化物固有地在不同的生长速率下，因为不同平面中原子间的间距是不同的。 在含氮环境中加热硅以形成氮化物薄层，然后通过薄氮化层生长氧化物，将氧化物厚度的差异减小到小于1％。

    Dual gate oxide process without critical resist and without N2 implant
    6.
    发明授权
    Dual gate oxide process without critical resist and without N2 implant 有权
    双栅氧化物工艺，无需临界抗蚀剂，无N2注入

    公开(公告)号：US06579766B1

    公开(公告)日：2003-06-17

    申请号：US10077518

    申请日：2002-02-15

    申请人： Helmut H. Tews ,  Ravikumar Ramachandran ,  Kilho Lee

    发明人： Helmut H. Tews ,  Ravikumar Ramachandran ,  Kilho Lee

    IPC分类号： H01L21336

    CPC分类号： H01L21/823857

    摘要： A process as shown in FIGS. 1A through 1I, or FIGS. 2A through 2I for providing first areas of gate oxide (30, 30A, 30B) on a substrate (10) having a first thickness and second adjacent areas (32, 32A, 32B) of gate oxide having a lesser thickness without the use of a N2 implantation process.

    摘要翻译： 如图1和图2所示的处理。 图1A至图1I， 用于在具有第一厚度的衬底（10）上提供栅极氧化物（30,30A，30B）的第一区域，以及具有较小厚度的栅极氧化物的第二相邻区域（32,32A，32B），而不使用 N2植入工艺。

    Semiconductor memory device with reduced orientation-dependent oxidation in trench structures
    7.
    发明授权
    Semiconductor memory device with reduced orientation-dependent oxidation in trench structures 失效
    半导体存储器件在沟槽结构中具有降低的取向依赖性氧化

    公开(公告)号：US06437381B1

    公开(公告)日：2002-08-20

    申请号：US09560081

    申请日：2000-04-27

    申请人： Ulrike Gruening ,  Rajarao Jammy ,  Helmut H. Tews

    发明人： Ulrike Gruening ,  Rajarao Jammy ,  Helmut H. Tews

    IPC分类号： A01L2976

    CPC分类号： H01L27/10876 ,  H01L27/10864

    摘要： A process for forming an oxide layer on a sidewall of a trench in a substrate. The process comprises the steps of forming the trench in the substrate, forming a nitride interface layer over a portion of the trench sidewall, forming an amorphous layer over the nitride interface layer, and oxidizing the amorphous layer to form the oxide layer. The process may be used, for example, to form a gate oxide for a vertical transistor, or an isolation collar. The invention also comprises a semiconductor memory device comprising a substrate, a trench in the substrate having a sidewall, an isolation collar comprising an isolation collar oxide layer on the trench sidewall in an upper region of the trench, and a vertical gate oxide comprising a gate oxide layer located on the trench sidewall above the isolation collar. The isolation collar oxide layer is disposed over an isolation collar nitride interface layer between the isolation collar oxide layer and the trench sidewall, the gate oxide layer is disposed over a gate nitride interface layer between the gate oxide layer and the trench sidewall, or both.

    摘要翻译： 一种在衬底的沟槽的侧壁上形成氧化物层的工艺。 该方法包括以下步骤：在衬底中形成沟槽，在沟槽侧壁的一部分上形成氮化物界面层，在氮化物界面层上形成非晶层，并氧化非晶层以形成氧化物层。 该工艺可用于例如形成用于垂直晶体管的栅极氧化物或隔离环。 本发明还包括半导体存储器件，其包括衬底，衬底中的沟槽，具有侧壁，隔离套环包括在沟槽的上部区域中的沟槽侧壁上的隔离环氧化物层，以及包括栅极的垂直栅极氧化物 氧化物层位于隔离环上方的沟槽侧壁上。 隔离环氧化物层设置在隔离环氧化物层和沟槽侧壁之间的隔离环氮化物界面层上，栅极氧化物层设置在栅极氧化物层和沟槽侧壁之间的栅极氮化物界面层上，或两者。