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    Process for purification of germane
    1.
    发明授权
    Process for purification of germane 有权
    锗烷纯化方法

    公开(公告)号：US07087102B2

    公开(公告)日：2006-08-08

    申请号：US10788223

    申请日：2004-02-26

    申请人： Howard Paul Withers, Jr. ,  Philip Bruce Henderson

    发明人： Howard Paul Withers, Jr. ,  Philip Bruce Henderson

    IPC分类号： B01D53/04

    CPC分类号： C22B41/00 ,  C22B3/24 ,  Y02P10/234

    摘要： A process and system for the synthesis and/or purification of crude germane to provide a purified germane product are disclosed herein. In one aspect of the present invention, there is provided a process for making a purified germane product containing less than 1 volume percent of one or more germanium-containing impurities comprising: providing a crude germane fluid; passing at least a portion of the crude germane fluid through a first adsorbent which selectively adsorbs water and carbon dioxide contained therein and withdrawing therefrom a partially purified germane fluid; passing at least a portion of the partially purified germane fluid through a second adsorbent which selectively adsorbs the one or more germanium-containing impurities contained therein and withdrawing therefrom a hydrogen-enriched purified germane fluid; and separating the purified germane product hydrogen from the hydrogen-enriched purified germane fluid.

    摘要翻译： 本文公开了用于合成和/或纯化粗锗烷以提供纯化的锗烷产物的方法和系统。 在本发明的一个方面，提供了一种制备含有少于1体积％的一种或多种含锗杂质的纯化的锗烷产物的方法，包括：提供粗锗烷流体; 使至少一部分粗锗烷流体通过第一吸附剂，该第一吸附剂选择性地吸附其中含有的水和二氧化碳并从其中提取部分纯化的锗烷流体; 使部分纯化的锗烷流体的至少一部分通过第二吸附剂，所述第二吸附剂选择性地吸附其中含有的一种或多种含锗杂质并从其中提取富含氢的纯化的锗烷流体; 并将纯化的锗烷产物氢与富氢纯化的锗烷流体分离。

    Removing fluorine from semiconductor processing exhaust gas
    3.
    发明授权
    Removing fluorine from semiconductor processing exhaust gas 失效
    从半导体加工废气中除去氟

    公开(公告)号：US06514471B1

    公开(公告)日：2003-02-04

    申请号：US09702189

    申请日：2000-10-31

    申请人： Thomas Hsiao-Ling Hsiung ,  Howard Paul Withers, Jr.

    发明人： Thomas Hsiao-Ling Hsiung ,  Howard Paul Withers, Jr.

    IPC分类号： C01B720

    CPC分类号： B01J20/28073 ,  B01D53/685 ,  B01J20/08

    摘要： Fluorine is removed from exhaust gas coming from a cleaning, etching or CVD operation in semiconductor fabrication by passing the gas through a fixed bed of activated alumina having a high total pore volume while maintaining the fluorine level of the gas passing into the alumina bed at 4 volume percent or less. Nitrogen can be added to the exhaust gas to control fluorine concentration. Using alumina having an initial total pore volume above 0.35 cc/gm and limiting the fluorine level in the exhaust gas enables the fixed bed to operate without undue plugging or sintering.

    摘要翻译： 通过使气体通过具有高总孔体积的活性氧化铝的固定床，同时保持通过氧化铝床的气体的氟水平为4，从半导体制造中的清洁，蚀刻或CVD操作的废气中除去氟 体积百分比或更少。 可以向废气中加入氮气以控制氟浓度。 使用初始总孔体积高于0.35cc / gm并限制排气中的氟含量的氧化铝使得固定床能够在没有过多的堵塞或烧结的情况下运行。

    Abatement of NF.sub.3 using small particle fluidized bed
    7.
    发明授权
    Abatement of NF.sub.3 using small particle fluidized bed 失效
    使用小颗粒流化床减少NF3

    公开(公告)号：US6106790A

    公开(公告)日：2000-08-22

    申请号：US914085

    申请日：1997-08-18

    申请人： Thomas Hsiao-Ling Hsiung ,  Howard Paul Withers, Jr.

    发明人： Thomas Hsiao-Ling Hsiung ,  Howard Paul Withers, Jr.

    IPC分类号： B01D53/14 ,  B01D53/68 ,  B01D53/54

    CPC分类号： B01D53/685 ,  Y02C20/30

    摘要： A process for destroying NF.sub.3 in a gas containing NF.sub.3 by contacting the gas with a fluidized bed of metal particles capable of reacting with NF.sub.3 wherein the metal particles have a particle size essentially no greater than approximately 300 microns. The process can be conducted in parallel connected switching fluidized beds wherein the beds are switched based upon achieving a predetermined bed height expansion based upon the reaction of the metal particles with the NF.sub.3.

    摘要翻译： 通过使气体与能够与NF 3反应的金属颗粒的流化床接触来破坏含有NF 3的气体中的NF 3的方法，其中金属颗粒的粒度基本上不大于约300微米。 该过程可以在并联连接的切换流化床中进行，其中基于金属颗粒与NF 3的反应实现预定的床高度膨胀来切换床。

    AMINOSILANES AND METHODS FOR MAKING SAME
    10.
    发明申请
    AMINOSILANES AND METHODS FOR MAKING SAME 审中-公开
    氨基硅烷及其制备方法

    公开(公告)号：US20120277457A1

    公开(公告)日：2012-11-01

    申请号：US13251684

    申请日：2011-10-03

    申请人： John Francis Lehmann ,  Howard Paul Withers, JR.

    发明人： John Francis Lehmann ,  Howard Paul Withers, JR.

    IPC分类号： C07F7/02

    CPC分类号： C07F7/025 ,  C07F7/10 ,  C07F7/12

    摘要： Aminosilanes, such as diisopropylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make these aminosilanes as well as intermediate compounds such as haloaminosilane compounds having the following formula: X4-nHn-1SiN(CH(CH3)2)2 wherein n is a number selected from 1, 2 and 3; and X is a halogen selected from Cl, Br, or a mixture of Cl and Br provided that when X is Cl, n is not 1.

    摘要翻译： 氨基硅烷，例如二异丙基氨基硅烷（DIPAS）是用于沉积含硅膜，例如氧化硅和氮化硅膜的前体。 本文描述了制备这些氨基硅烷以及具有下式的卤代氨基硅烷化合物的中间体化合物的方法：X4-nHn-1SiN（CH（CH3）2）2，其中n是选自1,2和3的数; X为选自Cl，Br的卤素或Cl和Br的混合物，条件是当X为Cl时，n不为1。