公开(公告)号：US06777171B2

公开(公告)日：2004-08-17

申请号：US09839869

申请日：2001-04-20

申请人： Ping Xu ,  Jia Lee ,  Ishing Lou ,  Li-Qun Xia

发明人： Ping Xu ,  Jia Lee ,  Ishing Lou ,  Li-Qun Xia

IPC分类号： H01L2131

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/325 ,  C23C16/345 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829

摘要： A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.

摘要翻译： 公开了一种形成碳化硅层，氮化硅层，有机硅酸盐层的方法。 在存在电场的情况下使包含硅源，碳源和氟源的气体混合物反应形成碳化硅层。 氮化硅层通过在电场存在下使包含硅源，氮源和氟源的气体混合物反应而形成。 有机硅酸盐层通过在电场存在下使包含硅源，碳源，氧源和氟源的气体混合物反应而形成。 碳化硅层，氮化硅层和有机硅酸盐层都与集成电路制造工艺兼容。

公开(公告)号：US6153540A

公开(公告)日：2000-11-28

申请号：US34850

申请日：1998-03-04

申请人： Ishing Lou ,  Cary Ching ,  Peter W. Lee ,  Rong Pan ,  Paul Gee ,  Francimar Campana

发明人： Ishing Lou ,  Cary Ching ,  Peter W. Lee ,  Rong Pan ,  Paul Gee ,  Francimar Campana

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/02129 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/31625

摘要： A method and apparatus for controlling the wet-etch rate and thickness uniformity of a dielectric layer, such as a phosphosilicate glass layer (PSG) layer. The method is based upon the discovery that the atmospheric pressure at which a PSG layer is deposited affects the wet-etch rate of the same, during a subsequent processing step, as well as the layer's thickness uniformity. As a result, the method of the present invention includes the step of pressurizing the atmospheric pressure of a semiconductor process chamber within a predetermined range after the substrate is deposited therein. Flowed into the deposition zone is a process gas comprising a silicon source, all oxygen source, and a phosphorous source; and maintaining the deposition zone at process conditions suitable for depositing a phosphosilicate glass layer on the substrate.

摘要翻译： 一种用于控制诸如磷硅酸盐玻璃层（PSG）层的介电层的湿蚀刻速率和厚度均匀性的方法和装置。 该方法基于以下发现：沉积PSG层的大气压力在随后的处理步骤期间影响其湿蚀刻速率以及层的厚度均匀性。 结果，本发明的方法包括在衬底沉积之后在预定范围内对半导体处理室的大气压进行加压的步骤。 流入沉积区的是包括硅源，全氧源和磷源的工艺气体; 以及将沉积区保持在适合于在基底上沉积磷硅酸盐玻璃层的工艺条件。