公开(公告)号：US06777171B2

公开(公告)日：2004-08-17

申请号：US09839869

申请日：2001-04-20

申请人： Ping Xu ,  Jia Lee ,  Ishing Lou ,  Li-Qun Xia

发明人： Ping Xu ,  Jia Lee ,  Ishing Lou ,  Li-Qun Xia

IPC分类号： H01L2131

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/325 ,  C23C16/345 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829

摘要： A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.

摘要翻译： 公开了一种形成碳化硅层，氮化硅层，有机硅酸盐层的方法。 在存在电场的情况下使包含硅源，碳源和氟源的气体混合物反应形成碳化硅层。 氮化硅层通过在电场存在下使包含硅源，氮源和氟源的气体混合物反应而形成。 有机硅酸盐层通过在电场存在下使包含硅源，碳源，氧源和氟源的气体混合物反应而形成。 碳化硅层，氮化硅层和有机硅酸盐层都与集成电路制造工艺兼容。

公开(公告)号：US20050020048A1

公开(公告)日：2005-01-27

申请号：US10894872

申请日：2004-07-20

申请人： Srinivas Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

发明人： Srinivas Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC分类号： C23C16/42 ,  C23C16/32 ,  H01L21/20 ,  H01L21/314 ,  H01L21/768 ,  H01L23/522 ,  H01L21/331

CPC分类号： H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

摘要翻译： 提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。 碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。 沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

公开(公告)号：US07117064B2

公开(公告)日：2006-10-03

申请号：US11358793

申请日：2006-02-21

申请人： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

发明人： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC分类号： G06F19/00 ,  C23C16/00 ,  H05H1/24 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

公开(公告)号：US20060141805A1

公开(公告)日：2006-06-29

申请号：US11358793

申请日：2006-02-21

申请人： Srinivas Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

发明人： Srinivas Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

公开(公告)号：US07001850B2

公开(公告)日：2006-02-21

申请号：US10894872

申请日：2004-07-20

申请人： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

发明人： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

摘要翻译： 提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。 碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。 沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

公开(公告)号：US06764958B1

公开(公告)日：2004-07-20

申请号：US09627667

申请日：2000-07-28

申请人： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

发明人： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC分类号： H01L2131

CPC分类号： H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

摘要翻译： 提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。 碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。 沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

公开(公告)号：US20070042610A1

公开(公告)日：2007-02-22

申请号：US11537928

申请日：2006-10-02

申请人： Li-Qun Xia ,  Ping Xu ,  Louis Yang

发明人： Li-Qun Xia ,  Ping Xu ,  Louis Yang

IPC分类号： H01L21/31

CPC分类号： H01L21/76835 ,  C23C16/325 ,  H01L21/0206 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

摘要翻译： 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。

公开(公告)号：US07125813B2

公开(公告)日：2006-10-24

申请号：US10828441

申请日：2004-04-20

申请人： Li-Qun Xia ,  Ping Xu ,  Louis Yang

发明人： Li-Qun Xia ,  Ping Xu ,  Louis Yang

IPC分类号： H01L21/31

CPC分类号： H01L21/76835 ,  C23C16/325 ,  H01L21/0206 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

摘要翻译： 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。

公开(公告)号：US06890850B2

公开(公告)日：2005-05-10

申请号：US10196498

申请日：2002-07-15

申请人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

发明人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC分类号： C23C16/42 ,  C23C16/30 ,  C23C16/40 ,  C23C16/56 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

摘要翻译： 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

公开(公告)号：US06849562B2

公开(公告)日：2005-02-01

申请号：US10092203

申请日：2002-03-04

申请人： Chi-I Lang ,  Li-Qun Xia ,  Ping Xu ,  Louis Yang

发明人： Chi-I Lang ,  Li-Qun Xia ,  Ping Xu ,  Louis Yang

IPC分类号： C23C16/36 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/36

摘要： A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NR1R2R3, wherein R1, R2, and R3 are selected from the group consisting of alkyl and phenyl groups. The low k dielectric film may be used as a barrier layer, an etch stop, an anti-reflective coating, or a hard mask.

摘要翻译： 提供了沉积包含硅，碳和氮的低k电介质膜的方法。 低k电介质膜由包含硅源，碳源和NR1R2R3的气体混合物形成，其中R1，R2和R3选自烷基和苯基。 低k电介质膜可以用作阻挡层，蚀刻停止层，抗反射涂层或硬掩模。