公开(公告)号：US09842987B2

公开(公告)日：2017-12-12

申请号：US14265697

申请日：2014-04-30

申请人： SeChung Oh ,  JoonMyoung Lee

发明人： SeChung Oh ,  JoonMyoung Lee

IPC分类号： H01L43/08 ,  G11B5/39

CPC分类号： H01L43/08 ,  G11B5/3909 ,  G11C11/161 ,  G11C2213/54

摘要： Magnetic memory devices include a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer. At least one of the free layer and the pinned layer includes a first vertical magnetic layer on the tunnel barrier layer and including boron (B), and a second vertical magnetic layer on the first vertical magnetic layer and having a lower B content than the first vertical magnetic layer. The first vertical magnetic layer is between the tunnel barrier layer and the second vertical magnetic layer, and a thickness of the second vertical magnetic layer is thinner than a thickness of the first vertical magnetic layer.

公开(公告)号：US20170125669A1

公开(公告)日：2017-05-04

申请号：US15202250

申请日：2016-07-05

申请人： Yong Sung PARK ,  Joonmyoung LEE ,  Ki Woong KIM ,  Juhyun KIM ,  Sechung OH

发明人： Yong Sung PARK ,  Joonmyoung LEE ,  Ki Woong KIM ,  Juhyun KIM ,  Sechung OH

IPC分类号： H01L43/12 ,  H01L43/08

CPC分类号： H01L43/12 ,  C23C14/08 ,  C23C14/081 ,  C23C14/3464 ,  H01F41/307 ,  H01L43/08

摘要： A method of forming a layer includes providing a first insulator and a second insulator over a lower structure, generating a first ion source and a second ion source from the first insulator and the second insulator, respectively, and forming an insulating layer on the lower structure using the first ion source and the second ion source. The first and second insulators are vertically spaced apart from the lower structure and are laterally spaced apart from each other. The first insulator and the second insulator include the same material.

公开(公告)号：US09905753B2

公开(公告)日：2018-02-27

申请号：US15157399

申请日：2016-05-17

申请人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

发明人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

IPC分类号： H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

公开(公告)号：US20160133831A1

公开(公告)日：2016-05-12

申请号：US14919718

申请日：2015-10-21

申请人： Ki Woong KIM ,  Yongsung PARK ,  Yunjae LEE ,  Joonmyoung LEE ,  Woo Chang LIM

发明人： Ki Woong KIM ,  Yongsung PARK ,  Yunjae LEE ,  Joonmyoung LEE ,  Woo Chang LIM

IPC分类号： H01L43/12 ,  C23C14/58 ,  C23C14/16 ,  C23C14/18 ,  C23C14/34 ,  C23C14/08

CPC分类号： H01L43/12 ,  C23C14/08 ,  C23C14/081 ,  C23C14/082 ,  C23C14/083 ,  C23C14/165 ,  C23C14/185 ,  C23C14/34 ,  C23C14/3492 ,  C23C14/5853 ,  G11C11/161 ,  H01F10/3286 ,  H01F41/307

摘要： A method of forming a metal oxide layer and a magnetic memory device includes a post-oxidation process in which a process cycle is performed at least once, which includes depositing a metal layer on a magnetic layer and oxidizing the metal layer.

摘要翻译： 形成金属氧化物层的方法和磁存储器件包括其中进行至少一次处理循环的后氧化工艺，其包括在磁性层上沉积金属层并氧化金属层。

公开(公告)号：US20160133307A1

公开(公告)日：2016-05-12

申请号：US14794801

申请日：2015-07-08

申请人： Joonmyoung LEE ,  Kwangseok KIM ,  Ki Woong KIM ,  Whankyun KIM ,  Sang Hwan PARK

发明人： Joonmyoung LEE ,  Kwangseok KIM ,  Ki Woong KIM ,  Whankyun KIM ,  Sang Hwan PARK

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A magnetic memory device includes a reference magnetic pattern having a magnetization direction fixed in one direction, a free magnetic pattern having a changeable magnetization direction, and a tunnel barrier pattern disposed between the free and reference magnetic patterns. The free magnetic pattern has a first surface being in contact with the tunnel barrier pattern and a second surface opposite to the first surface. The magnetic memory device further includes a sub-oxide pattern disposed on the second surface of the free magnetic pattern, and a metal boride pattern disposed between the sub-oxide pattern and the second surface of the free magnetic pattern. The magnetization directions of the free and reference magnetic patterns are substantially perpendicular to the first surface of the free magnetic pattern.

摘要翻译： 一种磁存储器件包括具有沿一个方向固定的磁化方向的参考磁图案，具有可变磁化方向的自由磁图案，以及布置在自由参考磁图案和参考磁图案之间的隧道势垒图案。 自由磁性图案具有与隧道阻挡图案接触的第一表面和与第一表面相对的第二表面。 磁存储器件还包括设置在自由磁图案的第二表面上的次氧化物图案，以及设置在子氧化物图案和自由磁图案的第二表面之间的金属硼化物图案。 自由和参考磁性图案的磁化方向基本上垂直于自由磁图案的第一表面。

公开(公告)号：US10147873B2

公开(公告)日：2018-12-04

申请号：US15870854

申请日：2018-01-12

申请人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

发明人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

IPC分类号： H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

公开(公告)号：US09985200B2

公开(公告)日：2018-05-29

申请号：US15603999

申请日：2017-05-24

申请人： Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh

发明人： Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L43/06 ,  H01L43/04 ,  H01L43/14 ,  H01L27/11507 ,  H01L27/11502 ,  H01L27/22 ,  G11B5/39

CPC分类号： H01L43/02 ,  G11B5/3909 ,  G11C11/16 ,  G11C11/161 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/22 ,  H01L27/222 ,  H01L43/04 ,  H01L43/06 ,  H01L43/065 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14

摘要： A magnetic memory device can include a first electrode and a first magnetic structure that is spaced apart from the first electrode, where the first magnetic structure can include a magnetic pattern therein. An oxidized non-magnetic pattern can be located between the first magnetic structure and the first electrode, where the oxidized non-magnetic pattern can include a non-metallic element having a standard free energy of oxide formation that is less than about that of a standard free energy of oxide formation of Fe.

公开(公告)号：US20170110301A1

公开(公告)日：2017-04-20

申请号：US15202597

申请日：2016-07-06

申请人： Joonmyoung LEE ,  Woojin KIM

发明人： Joonmyoung LEE ,  Woojin KIM

IPC分类号： H01J37/34 ,  H01J37/32 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  C23C14/34 ,  H01L27/22

CPC分类号： H01J37/3488 ,  C23C14/08 ,  C23C14/3464 ,  C23C14/505 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3447 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A sputtering apparatus includes a process chamber in which a sputtering process is performed, a substrate holder provided in the process chamber and fixing a horizontal position of a substrate during the sputtering process, and a first sputter gun provided to be vertically spaced apart from the substrate in the process chamber. The first sputter gun is spaced apart from the substrate by a first horizontal distance during the sputtering process. The first sputter gun is fixed during the sputtering process. The first horizontal distance is a horizontal distance between the substrate and the first sputter gun when viewed from a plan view.

公开(公告)号：US09203014B2

公开(公告)日：2015-12-01

申请号：US14155725

申请日：2014-01-15

申请人： Joonmyoung Lee ,  Yunjae Lee ,  Woojin Kim

发明人： Joonmyoung Lee ,  Yunjae Lee ,  Woojin Kim

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01F10/32 ,  G11C11/16

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01F10/3254 ,  H01L43/08

摘要： A magnetic memory device may include a free magnetic structure, a tunnel barrier layer, and a pinned magnetic structure wherein the tunnel barrier layer is between the free magnetic structure and the pinned magnetic structure. The pinned magnetic structure may include first and second pinned layers and an exchange coupling layer between the first and second pinned layers. The second pinned layer may be between the first pinned layer and the tunnel barrier layer, and the second pinned layer may include a junction magnetic layer and a buffer layer between the junction magnetic layer and the exchange coupling layer. The buffer layer may include a layer of a material including a non-magnetic metallic element. Related devices, structures, and methods are also discussed.

摘要翻译： 磁存储器件可以包括自由磁结构，隧道势垒层和钉扎磁结构，其中隧道势垒层位于自由磁结构和钉扎磁结构之间。 被钉扎的磁性结构可以包括第一和第二被钉扎层以及在第一和第二钉扎层之间的交换耦合层。 第二被钉扎层可以在第一被钉扎层和隧道势垒层之间，并且第二钉扎层可以在结磁性层和交换耦合层之间包括结磁性层和缓冲层。 缓冲层可以包括包括非磁性金属元素的材料层。 还讨论了相关设备，结构和方法。

公开(公告)号：US20180138397A1

公开(公告)日：2018-05-17

申请号：US15870854

申请日：2018-01-12

申请人： Joonmyoung LEE ,  Youngman JANG ,  Kiwoong KIM ,  Yongsung PARK

发明人： Joonmyoung LEE ,  Youngman JANG ,  Kiwoong KIM ,  Yongsung PARK

IPC分类号： H01L43/12 ,  H01L43/10 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.