公开(公告)号：US06440866B1

公开(公告)日：2002-08-27

申请号：US09595750

申请日：2000-06-16

申请人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L2100

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

摘要翻译： 本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅） ，并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。 通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置 或远程加热硅片。

公开(公告)号：US06218312B1

公开(公告)日：2001-04-17

申请号：US08987509

申请日：1998-10-08

申请人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L21302

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

摘要翻译： 本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅） ，并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。 通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置 或远程加热硅片。

公开(公告)号：US6036877A

公开(公告)日：2000-03-14

申请号：US648256

申请日：1996-05-13

申请人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L21/302 ,  C23C16/517 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683 ,  H05H1/00

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US5990017A

公开(公告)日：1999-11-23

申请号：US104550

申请日：1998-06-25

申请人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US6024826A

公开(公告)日：2000-02-15

申请号：US734797

申请日：1996-10-23

申请人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US06623596B1

公开(公告)日：2003-09-23

申请号：US09523824

申请日：2000-03-13

申请人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Eric Askarinam ,  Joshua Chiu-Wing Tsui ,  David W. Groechel ,  Raymond Hung

发明人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Eric Askarinam ,  Joshua Chiu-Wing Tsui ,  David W. Groechel ,  Raymond Hung

IPC分类号： C23F100

CPC分类号： H01J37/32458 ,  A21D2/185 ,  A23G3/346 ,  A23G9/52 ,  A23G2200/06 ,  A23L2/60 ,  A23L9/12 ,  A23L19/115 ,  A23L27/30 ,  A23L27/32 ,  A23L29/231 ,  A23L29/238 ,  A23L29/256 ,  A23L29/27 ,  A23L33/21 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32871 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a semiconductor window electrode overlying the base, a gas inlet system for admitting a plasma precursor gas into the chamber, an electrical terminal coupled to the semiconductor window electrode, an inductive antenna adjacent one side of the semiconductor window electrode opposite the base for coupling power into the interior of said chamber through the semiconductor window electrode.

摘要翻译： 一种用于加工工件的等离子体反应器包括限定处理室的反应器壳体，用于在其处理期间支撑工件的室内的基座，覆盖在基底上的半导体窗口电极，用于将等离子体前体气体引入室中的气体入口系统 耦合到所述半导体窗口电极的电端子，与所述半导体窗电极的与所述半导体窗电极相对的一侧的电感天线，用于通过所述半导体窗电极将功率耦合到所述室的内部。

公开(公告)号：US6077384A

公开(公告)日：2000-06-20

申请号：US597577

申请日：1996-02-02

申请人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Eric Askarinam ,  Joshua Chiu-Wing Tsui ,  David W. Groechel ,  Raymond Hung

发明人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Eric Askarinam ,  Joshua Chiu-Wing Tsui ,  David W. Groechel ,  Raymond Hung

IPC分类号： H05H1/46 ,  A21D2/18 ,  A23G3/34 ,  A23G9/52 ,  A23L1/0524 ,  A23L1/0526 ,  A23L1/0532 ,  A23L1/054 ,  A23L1/187 ,  A23L1/214 ,  A23L1/236 ,  A23L1/308 ,  A23L2/60 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H05H1/00

CPC分类号： H01J37/32458 ,  A21D2/185 ,  A23G3/346 ,  A23G9/52 ,  A23L19/115 ,  A23L2/60 ,  A23L27/30 ,  A23L27/32 ,  A23L29/231 ,  A23L29/238 ,  A23L29/256 ,  A23L29/27 ,  A23L33/21 ,  A23L9/12 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32871 ,  H01L21/6831 ,  A23G2200/06 ,  H01J2237/3345 ,  H01J2237/3346

摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.

摘要翻译： 本发明由用于处理工件的等离子体反应器实现，包括限定处理室的反应器壳体，半导体窗口，用于在其处理期间支撑工件的室内的基座，用于将等离子体前体气体引入的气体入口系统 所述腔室和靠近所述半导体窗口的与所述基座相对的一侧的感应天线，用于通过所述半导体窗口电极将功率耦合到所述腔室的内部。

公开(公告)号：US06444085B1

公开(公告)日：2002-09-03

申请号：US09675319

申请日：2000-09-29

申请人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

发明人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC分类号： C23C1600

CPC分类号： H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

摘要翻译： 本发明体现在电感耦合RF等离子体反应器中，其包括限定等离子体反应器室的反应室外壳和用于将工件保持在室内的支撑件，邻近反应室壳体的非平面感应天线，非平面感应天线 包括相对于工件的平面空间分布在非平面中的电感元件，以补偿天线的RF感应图案中的零点，以及耦合到非平面感应天线的等离子体源RF电源。 平面感应天线可以是对称的或非对称的，尽管它优选地包括诸如导电绕组的垂直堆叠的螺线管绕组。 在优选实施例中，绕组处于距对称轴的最小径向距离，而在替代实施例中，绕组处于与对称半径相当大的部分的对称轴的径向距离处。

公开(公告)号：US06165311A

公开(公告)日：2000-12-26

申请号：US648254

申请日：1996-05-13

申请人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

发明人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC分类号： H05H1/46 ,  B01D53/22 ,  B01D53/26 ,  C23C16/517 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683 ,  C23F1/02

CPC分类号： H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

摘要翻译： 本发明体现在电感耦合RF等离子体反应器中，其包括限定等离子体反应器室的反应室外壳和用于将工件保持在室内的支撑件，邻近反应室壳体的非平面感应天线，非平面感应天线 包括相对于工件的平面以非平面方式空间分布的电感元件，以补偿天线的RF感应图案中的零点，以及耦合到非平面感应天线的等离子体源RF电源。 平面感应天线可以是对称的或非对称的，尽管它优选地包括诸如导电绕组的垂直堆叠的螺线管绕组。 在优选实施例中，绕组处于距对称轴的最小径向距离，而在替代实施例中，绕组处于与对称半径相当大的部分的对称轴的径向距离处。

公开(公告)号：US06736931B2

公开(公告)日：2004-05-18

申请号：US09970121

申请日：2001-10-02

申请人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

发明人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC分类号： C23C1600

CPC分类号： H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.