Diamond diaphragm
    4.
    发明申请
    Diamond diaphragm 审中-公开
    金刚石隔膜

    公开(公告)号:US20070042185A1

    公开(公告)日:2007-02-22

    申请号:US11504645

    申请日:2006-08-16

    摘要: A method for fabricating a diamond diaphragm is provided, wherein a non-homogeneous energy, generated by a hot wire, plasma, or flame, for activating and dissociating gas is provided to pass above a mold. Due to different distances between a curved surface of the mold and the non-homogeneous energy, different heating effects are produced on the surface of the mold. When the diamond material is coated and grows on the surface of the mold, the growth rate of the diamond material appears to be different by location, thus, the diamond diaphragm has a non-homogeneous vibration characteristic, and thereby having a response bandwidth wider than that of a diamond diaphragm with homogeneous vibration characteristic.

    摘要翻译: 提供一种用于制造金刚石膜片的方法,其中提供用于激活和解离气体的由热丝,等离子体或火焰产生的非均匀能量以通过模具上方。 由于模具的曲面与非均匀能量之间的距离不同,在模具表面产生不同的加热效果。 当金刚石材料被涂覆并在模具的表面上生长时,金刚石材料的生长速率似乎不同于位置,因此金刚石隔膜具有非均匀的振动特性,从而具有比 具有均匀振动特性的金刚石隔膜。

    DIAMOND SUBSTRATE AND METHOD FOR FABRICATING THE SAME
    5.
    发明申请
    DIAMOND SUBSTRATE AND METHOD FOR FABRICATING THE SAME 失效
    钻石基材及其制造方法

    公开(公告)号:US20060243982A1

    公开(公告)日:2006-11-02

    申请号:US11380356

    申请日:2006-04-26

    IPC分类号: H01L31/0312

    摘要: A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on the diamond layer or directly formed on the surface of the SiC layer. Thereby, the lattice mismatch between the diamond film layer and the semiconductor layer is mitigated by the SiC layer, and the crystalline quality of the semiconductor layer is improved, the fabricating process of the diamond substrate is simplified, and the performance and stability are enhanced.

    摘要翻译: 提供了一种金刚石基板及其制造方法,其中在金刚石层的下表面上形成SiC层,以防止金刚石层在形成金刚石基板的过程之后变形,然后形成半导体层 在金刚石层上或直接形成在SiC层的表面上。 因此,通过SiC层减轻了金刚石膜层和半导体层之间的晶格失配,提高了半导体层的结晶质量,简化了金刚石基板的制造工艺,提高了性能和稳定性。

    Diamond substrate and method for fabricating the same
    6.
    发明授权
    Diamond substrate and method for fabricating the same 失效
    金刚石基板及其制造方法

    公开(公告)号:US07510906B2

    公开(公告)日:2009-03-31

    申请号:US11380356

    申请日:2006-04-26

    IPC分类号: H01L21/00

    摘要: A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on the diamond layer or directly formed on the surface of the SiC layer. Thereby, the lattice mismatch between the diamond film layer and the semiconductor layer is mitigated by the SiC layer, and the crystalline quality of the semiconductor layer is improved, the fabricating process of the diamond substrate is simplified, and the performance and stability are enhanced.

    摘要翻译: 提供了一种金刚石基板及其制造方法,其中在金刚石层的下表面上形成SiC层,以防止金刚石层在形成金刚石基板的过程之后变形,然后形成半导体层 在金刚石层上或直接形成在SiC层的表面上。 因此,通过SiC层减轻了金刚石膜层和半导体层之间的晶格失配,提高了半导体层的结晶质量,简化了金刚石基板的制造工艺,提高了性能和稳定性。