公开(公告)号：US20120210936A1

公开(公告)日：2012-08-23

申请号：US13353151

申请日：2012-01-18

申请人： Jerry Y. Wong ,  Linh Xuong Can ,  Shichung Chu ,  Grant N. Wang ,  Hi V. Lam ,  Amar Singh ,  James Y. Liu

发明人： Jerry Y. Wong ,  Linh Xuong Can ,  Shichung Chu ,  Grant N. Wang ,  Hi V. Lam ,  Amar Singh ,  James Y. Liu

IPC分类号： H01L31/18 ,  F03B11/02

CPC分类号： H01L31/18 ,  H01L21/67173 ,  H01L21/67236 ,  H01L21/6776 ,  Y10T137/8593

摘要： A system includes input and output sets processing chambers. The processing chambers of each of the input set and the output set are fluidly coupled and linearly aligned with each other along corresponding input and output directions. The processing chambers process and move a device between the processing chambers along corresponding input and output directions. The processing chambers of the input set separately process the device when the device is located in each of the processing chambers of the input set. The processing chambers of the output set separately process the device when the device is located in each of the processing chambers of the output set.

摘要翻译： 系统包括输入和输出组处理室。 每个输入组和输出组的处理室在相应的输入和输出方向上流体耦合并且彼此线性对准。 处理室根据相应的输入和输出方向处理和移动处理室之间的装置。 当设备位于输入组的每个处理室中时，输入组的处理室分别处理设备。 当设备位于输出组的每个处理室中时，输出设备的处理室分别处理设备。

公开(公告)号：US5556501A

公开(公告)日：1996-09-17

申请号：US41796

申请日：1993-04-01

申请人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Y. Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence C. Lei ,  Masato M. Toshima ,  Gerald Z. Yin

发明人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Y. Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence C. Lei ,  Masato M. Toshima ,  Gerald Z. Yin

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/311 ,  H05H1/46 ,  C23F1/02

CPC分类号： H01J37/32871 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3222 ,  H01J37/32293 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H05H1/46 ,  H01F2029/143

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US5308417A

公开(公告)日：1994-05-03

申请号：US758670

申请日：1991-09-12

申请人： David W. Groechel ,  Masato M. Toshima ,  Robert J. Steger ,  Jerry Y. Wong ,  Tetsuya Ishikawa ,  Regga Tekeste ,  Koichi Ito ,  Tetsuhiko Sambei

发明人： David W. Groechel ,  Masato M. Toshima ,  Robert J. Steger ,  Jerry Y. Wong ,  Tetsuya Ishikawa ,  Regga Tekeste ,  Koichi Ito ,  Tetsuhiko Sambei

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01L21/67253 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma reactor containing within the processing chamber pieces of magnetic material located to reduce and/or substantially eliminate systematic processing rate nonuniformities. These pieces are placed inside the chamber or attached inside of the pedestal adjacent to the top of the pedestal, where the wafer is to be located for processing. The thickness, shape and magnetic permeabilities of these magnetic pieces are selected to optimize process uniformity.

摘要翻译： 一种等离子体反应器，其包含处理室内的磁性材料片，以减少和/或基本上消除系统的加工速率不均匀性。 这些件被放置在腔室内或者附接在基座的顶部附近的基座的顶部，晶片将被放置在其中用于处理。 选择这些磁性片的厚度，形状和磁导率以优化工艺均匀性。