公开(公告)号：US5556501A

公开(公告)日：1996-09-17

申请号：US41796

申请日：1993-04-01

申请人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Y. Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence C. Lei ,  Masato M. Toshima ,  Gerald Z. Yin

发明人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Y. Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence C. Lei ,  Masato M. Toshima ,  Gerald Z. Yin

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/311 ,  H05H1/46 ,  C23F1/02

CPC分类号： H01J37/32871 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3222 ,  H01J37/32293 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H05H1/46 ,  H01F2029/143

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US06518195B1

公开(公告)日：2003-02-11

申请号：US09504312

申请日：2000-02-15

申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC分类号： H01L213065

CPC分类号： H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到10晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及蚀刻工艺沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US6068784A

公开(公告)日：2000-05-30

申请号：US41118

申请日：1993-04-01

申请人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

发明人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

IPC分类号： C23C16/507 ,  H01L21/311 ,  B44C1/22 ,  B28B1/02

CPC分类号： H01J37/32458 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01L21/31116 ,  H01F2029/143

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US06545420B1

公开(公告)日：2003-04-08

申请号：US08468573

申请日：1995-06-06

申请人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

发明人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

IPC分类号： H01J724

CPC分类号： H01J37/32871 ,  C23C16/509 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3222 ,  H01J37/32293 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US06488807B1

公开(公告)日：2002-12-03

申请号：US09563825

申请日：2000-05-03

申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC分类号： H05H100

CPC分类号： H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.

摘要翻译： 本发明体现在用于处理半导体工件的RF等离子体反应器中，其包括用于在其中容纳等离子体的壁结构，工件支撑件，能够接收源RF功率信号并在该室附近并列的线圈天线，所述工件支撑件包括 能够接收偏置RF功率信号的偏置电极，以及与壁结构相邻并且间隔的关系的第一和第二磁体结构，第一磁体结构的一个磁极面对第二磁体结构的相对极，磁体结构提供 等离子体约束的静磁场与所述壁结构相邻。 本发明还体现在用于处理半导体工件的RF等离子体反应器中，该半导体工件包括一个或多个用于在其中容纳等离子体的壁结构，工件支撑件，工件支撑件包括下电极，上电极面向下电极并间隔开 所述腔室的等离子体产生区域与所述下部电极相邻，第一和第二磁体结构邻近所述壁结构并且与所述第一磁体结构的与所述第二磁体结构的相反极的一极相隔开，所述磁体结构提供等离子体 围绕所述壁结构保持静止磁场。

公开(公告)号：US06251792B1

公开(公告)日：2001-06-26

申请号：US08948560

申请日：1997-10-10

申请人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

发明人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC分类号： H01L21302

CPC分类号： H01J37/32871 ,  C23C16/507 ,  C23C16/509 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3222 ,  H01J37/32293 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US5423945A

公开(公告)日：1995-06-13

申请号：US941501

申请日：1992-09-08

申请人： Jeffrey Marks ,  Kenneth S. Collins ,  Chan-Lon Yang ,  David W. Groechel ,  Peter R. Keswick

发明人： Jeffrey Marks ,  Kenneth S. Collins ,  Chan-Lon Yang ,  David W. Groechel ,  Peter R. Keswick

IPC分类号： C23C16/30 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H05H1/46 ,  H01L21/00

CPC分类号： H01J37/32871 ,  H01J37/32082 ,  H01J37/321 ,  H01L21/31116 ,  H05H1/46 ,  H01J2237/334 ,  H01J2237/3346 ,  H01J2237/3347

摘要： A method of etching an oxide over a nitride with high selectivity comprising plasma etching the oxide with a carbon and fluorine-containing etchant gas in the presence of a scavenger for fluorine, thereby forming a carbon-rich polymer which passivates the nitride. This polymer is inert to the plasma etch gases and thus provides high selectivity to the etch process.

摘要翻译： 一种以高选择性蚀刻氮化物上的氧化物的方法，包括在氟清除剂的存在下用含碳和含氟蚀刻剂气体等离子体蚀刻氧化物，从而形成钝化氮化物的富碳聚合物。 该聚合物对等离子体蚀刻气体是惰性的，因此为蚀刻工艺提供高选择性。

公开(公告)号：US06444137B1

公开(公告)日：2002-09-03

申请号：US08673972

申请日：1996-07-01

申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

IPC分类号： C23F100

CPC分类号： H01J37/32871 ,  C23C16/402 ,  C23C16/509 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3222 ,  H01J37/32293 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/6831

摘要： A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.

摘要翻译： 等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。 天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。 可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。

公开(公告)号：US5888414A

公开(公告)日：1999-03-30

申请号：US936777

申请日：1997-09-24

申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

IPC分类号： C23C16/517 ,  H01L21/311 ,  C23F1/00

CPC分类号： H01J37/32458 ,  C23C16/517 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32706 ,  H01L21/31116 ,  H01F2029/143

摘要： A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.

摘要翻译： 等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。 天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。 可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。

公开(公告)号：US06440866B1

公开(公告)日：2002-08-27

申请号：US09595750

申请日：2000-06-16

申请人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L2100

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

摘要翻译： 本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅） ，并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。 通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置 或远程加热硅片。