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11 条记录 (耗时 0.054 秒)

    Plasma reactor and processes using RF inductive coupling and scavenger temperature control
    9.
    发明授权
    Plasma reactor and processes using RF inductive coupling and scavenger temperature control 失效
    等离子体反应器和使用射频感应耦合和清除温度控制的工艺

    公开(公告)号：US5888414A

    公开(公告)日：1999-03-30

    申请号：US936777

    申请日：1997-09-24

    申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

    发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

    IPC分类号： C23C16/517 ,  H01L21/311 ,  C23F1/00

    CPC分类号： H01J37/32458 ,  C23C16/517 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32706 ,  H01L21/31116 ,  H01F2029/143

    摘要： A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.

    摘要翻译： 等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。 天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。 可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。

    High selectivity oxide etch process for integrated circuit structures
    10.
    发明授权
    High selectivity oxide etch process for integrated circuit structures 失效
    集成电路结构的高选择性氧化物蚀刻工艺

    公开(公告)号：US06171974B2

    公开(公告)日：2001-01-09

    申请号：US07826310

    申请日：1992-01-24

    申请人： Jeffrey Marks ,  Jerry Yuen-Kui Wong ,  David W. Groechel ,  Peter R. Keswick ,  Chan-Lon Yang

    发明人： Jeffrey Marks ,  Jerry Yuen-Kui Wong ,  David W. Groechel ,  Peter R. Keswick ,  Chan-Lon Yang

    IPC分类号： H01L21302

    CPC分类号： H01L21/67069 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01L21/6831

    摘要： A plasma etch process for oxide having high selectivity to silicon is disclosed comprising the use of a mixture of SiF4 and one or more other fluorine-containing etch gases in an etch chamber maintained within a pressure range of from about 1 milliTorr to about 200 milliTorr. Preferably, the etch chamber also contains an exposed silicon surface. The plasma may be generated by a capacitive discharge type plasma generator, if pressures of at least about 50 milliTorr are used, but preferably the plasma is generated by an electromagnetically coupled plasma generator. The high selectivity exhibited by the etch process of the invention permits use of an electromagnetically coupled plasma generator which, in turn, permits operation of the etch process at reduced pressures of preferably from about 1 milliTorr to about 30 milliTorr resulting in the etching of vertical sidewall openings in the oxide layer.

    摘要翻译： 公开了一种对硅具有高选择性的氧化物的等离子体蚀刻工艺，包括在保持在约1毫乇至约200毫乇的压力范围内的蚀刻室中使用SiF 4和一种或多种其它含氟蚀刻气体的混合物。 优选地，蚀刻室还包含暴露的硅表面。 如果使用至少约50毫乇的压力，则等离子体可以由电容放电型等离子体发生器产生，但优选地，等离子体由电磁耦合等离子体发生器产生。 通过本发明的蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器，其进而允许在优选约1毫乇至约30毫乇的减压下进行蚀刻工艺，导致垂直侧壁的蚀刻 氧化层中的开口。