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公开(公告)号：US20160172450A1
公开(公告)日：2016-06-16
申请号：US15050867
申请日：2016-02-23
申请人： Dong-soo LEE , Myoung-jae LEE , Seong-ho CHO , Mohammad Rakib UDDIN , David SEO , Moon-seung YANG , Sang-moon LEE , Sung-hun LEE , Ji-hyun HUR , Eui-chul HWANG
发明人： Dong-soo LEE , Myoung-jae LEE , Seong-ho CHO , Mohammad Rakib UDDIN , David SEO , Moon-seung YANG , Sang-moon LEE , Sung-hun LEE , Ji-hyun HUR , Eui-chul HWANG
IPC分类号： H01L29/34 , H01L21/322
CPC分类号： H01L29/34 , H01L21/02175 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/02304 , H01L21/28158 , H01L21/28264 , H01L21/322 , H01L21/3228 , H01L29/20 , H01L29/2003 , H01L29/24 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66522 , H01L29/7851
摘要： The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.
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公开(公告)号：US09105837B2
公开(公告)日：2015-08-11
申请号：US12929780
申请日：2011-02-15
申请人： Chang-jung Kim , Young-bae Kim , Ji-hyun Hur , Dong-soo Lee , Man Chang , Chang-bum Lee , Seung-ryul Lee
发明人： Chang-jung Kim , Young-bae Kim , Ji-hyun Hur , Dong-soo Lee , Man Chang , Chang-bum Lee , Seung-ryul Lee
CPC分类号： H01L45/085 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/1608 , H01L45/1675
摘要： Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures.
摘要翻译： 提供双极存储器单元和包括其的存储器件，双极存储单元包括具有相反编程方向的两个双极存储器层。 两个双极存储器层可以经由插入其间的中间电极彼此连接。 两个双极存储层可以具有相同的结构或相反的结构。
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3.发明授权公开(公告)号：US08455933B2
公开(公告)日：2013-06-04
申请号：US12801392
申请日：2010-06-07
申请人： Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
发明人： Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
IPC分类号： H01L31/062
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L29/41733
摘要： An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.
摘要翻译： 根据示例性实施例的图像传感器可以包括多个感光透明氧化物半导体层作为感光层。 光感测层可以堆叠在一个单位像素区域中。
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公开(公告)号：US20130043451A1
公开(公告)日：2013-02-21
申请号：US13431612
申请日：2012-03-27
申请人： Seung-ryul Lee , Young-bae Kim , Chang-jung Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Chang-bum Lee , Kyung-min Kim
发明人： Seung-ryul Lee , Young-bae Kim , Chang-jung Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Chang-bum Lee , Kyung-min Kim
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/12 , G11C2213/15 , G11C2213/32 , G11C2213/51 , G11C2213/55 , G11C2213/71 , G11C2213/72
摘要： Nonvolatile memory elements and memory devices including the nonvolatile memory elements. A nonvolatile memory element may include a memory layer between two electrodes, and the memory layer may have a multi-layer structure. The memory layer may include a base layer and an ionic species exchange layer and may have a resistance change characteristic due to movement of ionic species between the base layer and the ionic species exchange layer. The ionic species exchange layer may have a multi-layer structure including at least two layers. The nonvolatile memory element may have a multi-bit memory characteristic due to the ionic species exchange layer having the multi-layer structure. The base layer may be an oxygen supplying layer, and the ionic species exchange layer may be an oxygen exchange layer.
摘要翻译： 包括非易失性存储元件的非易失性存储元件和存储器件。 非易失性存储元件可以包括两个电极之间的存储层，并且存储层可以具有多层结构。 记忆层可以包括基层和离子物种交换层，并且由于离子物质在基层和离子物质交换层之间的移动而具有电阻变化特性。 离子物种交换层可以具有包括至少两层的多层结构。 由于具有多层结构的离子物质交换层，非易失性存储元件可能具有多位存储特性。 基底层可以是供氧层，离子物种交换层可以是氧交换层。
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公开(公告)号：US20120032132A1
公开(公告)日：2012-02-09
申请号：US13204138
申请日：2011-08-05
申请人： Seung-ryul Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Chang-bum Lee
发明人： Seung-ryul Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Chang-bum Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/146
摘要： Nonvolatile memory elements may include a first electrode, a second electrode, a first buffer layer, a second buffer layer and a memory layer. The memory layer may be between the first and second electrodes. The first butter layer may be between the memory layer and the first electrode. The second buffer layer may be between the memory layer and the second electrode. The memory layer may be a multi-layer structure including a first material layer and a second material layer. The first material layer may include a first metal oxide which is of the same group as, or a different group from, a second metal oxide included in the second material layer.
摘要翻译： 非易失性存储元件可以包括第一电极，第二电极，第一缓冲层，第二缓冲层和存储层。 存储层可以在第一和第二电极之间。 第一黄油层可以在存储层和第一电极之间。 第二缓冲层可以在存储层和第二电极之间。 存储层可以是包括第一材料层和第二材料层的多层结构。 第一材料层可以包括与包括在第二材料层中的第二金属氧化物相同的基团或与其不同的基团的第一金属氧化物。
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6.发明申请公开(公告)号：US20110156114A1
公开(公告)日：2011-06-30
申请号：US12801392
申请日：2010-06-07
申请人： Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
发明人： Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
IPC分类号： H01L31/0232
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L29/41733
摘要： An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.
摘要翻译： 根据示例性实施例的图像传感器可以包括多个感光透明氧化物半导体层作为感光层。 光感测层可以堆叠在一个单位像素区域中。
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公开(公告)号：US20150061088A1
公开(公告)日：2015-03-05
申请号：US14207880
申请日：2014-03-13
申请人： Dong-soo LEE , Myoung-Jae LEE , Seong-ho CHO , Mohammad Rakib Uddin , David SEO , Moon-seung YANG , Sang-moon LEE , Sung-hun LEE , Ji-hyun HUR , Eui-chul HWANG
发明人： Dong-soo LEE , Myoung-Jae LEE , Seong-ho CHO , Mohammad Rakib Uddin , David SEO , Moon-seung YANG , Sang-moon LEE , Sung-hun LEE , Ji-hyun HUR , Eui-chul HWANG
IPC分类号： H01L29/20 , H01L21/322
CPC分类号： H01L29/34 , H01L21/02175 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/02304 , H01L21/28158 , H01L21/28264 , H01L21/322 , H01L21/3228 , H01L29/20 , H01L29/2003 , H01L29/24 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66522 , H01L29/7851
摘要： The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.
摘要翻译： 本公开内容涉及包括III-V族化合物半导体层和电介质层之间的吸氧层的半导体器件以及制造该半导体器件的方法。 半导体器件可以包括化合物半导体层; 设置在所述化合物半导体层上的电介质层; 以及置于化合物半导体层和电介质层之间的吸氧层。 吸氧层包括具有比化合物半导体层的材料更高的氧亲合力的材料。
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公开(公告)号：US08772750B2
公开(公告)日：2014-07-08
申请号：US13115549
申请日：2011-05-25
申请人： Chang-bum Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Seung-ryul Lee
发明人： Chang-bum Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Seung-ryul Lee
CPC分类号： H01L27/2409 , G11C13/0007 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second material layer are configured to exchange ionic species to change a resistance state of the memory layer.
摘要翻译： 非易失性存储元件包括：设置在第一电极和第二电极之间的存储层; 以及设置在所述存储层和所述第一电极之间的缓冲层。 存储层包括第一材料层和第二材料层。 第一材料层和第二材料层被配置为交换离子物质以改变存储层的电阻状态。
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9.发明申请VARIABLE RESISTANCE DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE VARIABLE RESISTANCE DEVICE, AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE 有权可变电阻器件，包括可变电阻器件的半导体器件，以及操作半导体器件的方法公开(公告)号：US20120161821A1
公开(公告)日：2012-06-28
申请号：US13313720
申请日：2011-12-07
申请人： Man CHANG , Young-bae KIM , Chang-jung KIM , Myoung-jae LEE , Ji-hyun HUR , Dong-soo LEE , Chang-bum LEE , Seung-ryul LEE
发明人： Man CHANG , Young-bae KIM , Chang-jung KIM , Myoung-jae LEE , Ji-hyun HUR , Dong-soo LEE , Chang-bum LEE , Seung-ryul LEE
CPC分类号： G11C13/0069 , G11C11/5685 , G11C13/0064 , G11C2013/0073
摘要： A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.
摘要翻译： 一种操作包括可变电阻器件的半导体器件的方法，所述方法包括向可变电阻器件施加第一电压以便将可变电阻器件的电阻值从第一电阻值改变为第二电阻值，该第二电阻值是 不同于第一个电阻值; 感测流过施加有第一电压的可变电阻装置的第一电流; 确定第一电流是否落在预定的电流范围内; 并且如果所述第一电流不在所述第一电流范围内，则向所述可变电阻装置施加等于所述第一电压的附加第一电压。
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公开(公告)号：US20120049145A1
公开(公告)日：2012-03-01
申请号：US13115549
申请日：2011-05-25
申请人： Chang-bum Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Seung-ryul Lee
发明人： Chang-bum Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Seung-ryul Lee
IPC分类号： H01L45/00
CPC分类号： H01L27/2409 , G11C13/0007 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second material layer are configured to exchange ionic species to change a resistance state of the memory layer.
摘要翻译： 非易失性存储元件包括：设置在第一电极和第二电极之间的存储层; 以及设置在所述存储层和所述第一电极之间的缓冲层。 存储层包括第一材料层和第二材料层。 第一材料层和第二材料层被配置为交换离子物质以改变存储层的电阻状态。
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