公开(公告)号：US20130157452A1

公开(公告)日：2013-06-20

申请号：US13328875

申请日：2011-12-16

申请人： Jian-Hao Chen ,  Chia-Yu Lu ,  Tung-Heng Hsieh ,  Kuo-Feng Yu ,  Chin-Shan Hou ,  Hsien-Chin Lin ,  Shyue-Shyh Lin

发明人： Jian-Hao Chen ,  Chia-Yu Lu ,  Tung-Heng Hsieh ,  Kuo-Feng Yu ,  Chin-Shan Hou ,  Hsien-Chin Lin ,  Shyue-Shyh Lin

IPC分类号： H01L21/28

CPC分类号： H01L21/28123 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/78

摘要： A described method includes providing a semiconductor substrate. A first gate structure is formed on the semiconductor substrate and a sacrificial gate structure formed adjacent the first gate structure. The sacrificial gate structure may be used to form a metal gate structure using a replacement gate methodology. A dielectric layer is formed overlying the first gate structure and the sacrificial gate structure. The dielectric layer has a first thickness above a top surface of the first gate structure and a second thickness, less than the first thickness, above a top surface of the sacrificial gate structure. (See, e.g., FIGS. 5, 15, 26). Thus, a subsequent planarization process of the dielectric layer may not contact the first gate structure.

摘要翻译： 所述方法包括提供半导体衬底。 第一栅极结构形成在半导体衬底上，并且邻近第一栅极结构形成牺牲栅极结构。 牺牲栅极结构可以用于使用替代栅极方法形成金属栅极结构。 覆盖第一栅极结构和牺牲栅极结构的介电层形成。 电介质层在第一栅极结构的顶表面上方具有第一厚度，并且在牺牲栅极结构的顶表面上方具有小于第一厚度的第二厚度。 （参见例如图5,15,26）。 因此，电介质层的随后的平坦化处理可以不接触第一栅极结构。

公开(公告)号：US20130067965A1

公开(公告)日：2013-03-21

申请号：US13236334

申请日：2011-09-19

申请人： Yu-Sheng LIN ,  Yi Chen Chen ,  Kai Ying Cheng ,  Jian-Hao Peng

发明人： Yu-Sheng LIN ,  Yi Chen Chen ,  Kai Ying Cheng ,  Jian-Hao Peng

IPC分类号： D04B15/52

CPC分类号： D04B15/56

摘要： A yarn feeder for flat knitting machines is located on a yarn feeder guide track to move transversely thereon and includes a baseboard slidably coupled on the yarn feeder guide track, a first rocking arm, a second rocking arm and a yarn feeding unit located on the baseboard. The first and second rocking arms have respectively a first pivot end and a second pivot end coupled with the baseboard, and a first pressed end and a second pressed end to receive a horizontal force to swing respectively about the first and second pivot ends serving as fulcrums. The yarn feeding unit includes a yarn feeding arm located between the first and second rocking arms, and a first linkage bar hinged on the yarn feeding arm and first rocking arm to move simultaneously, and a second linkage bar hinged on the yarn feeding arm and second rocking arm to move simultaneously.

摘要翻译： 一种用于横机的喂纱机位于喂纱机导轨上，横向移动，包括可滑动地连接在给纱导轨上的底板，第一摇臂，第二摇臂和位于踢脚板上的喂纱单元 。 第一和第二摇臂分别具有与基板相连的第一枢转端和第二枢转端，以及第一按压端和第二按压端，以分别围绕作为支点的第一和第二枢转端部接收水平力以摆动 。 喂纱单元包括位于第一摇摆臂和第二摆动臂之间的喂纱臂，以及铰链在喂纱臂和第一摇臂上的第一连杆，以便同时移动，第二联动杆铰接在喂纱臂和第二摇臂上 摇臂同时移动。

公开(公告)号：US08381550B1

公开(公告)日：2013-02-26

申请号：US13236313

申请日：2011-09-19

申请人： Yu-Sheng Lin ,  Yi Chen Chen ,  Kai Ying Cheng ,  Jian-Hao Peng

发明人： Yu-Sheng Lin ,  Yi Chen Chen ,  Kai Ying Cheng ,  Jian-Hao Peng

IPC分类号： D04B15/36

CPC分类号： D04B15/36 ,  D04B7/04 ,  D04B15/10 ,  D04B15/24

摘要： A needle bed structure for flat knitting machines that is located at two sides of a needle bed gap includes a plurality of parallel needle plates, a plurality of knitting needles and sinkers located between the needle plates, a sinker control portion movable in parallel with the arranged direction of the sinkers, and at least one control cam driven by a switching portion to push the sinkers to rotate towards the needle bed gap during the switching movement. The switching portion performs a switching movement according to the moving direction. The needle plates hole at least one needle pressing board to restrict vertical movement of the knitting needles. The switching portion has a magnetic attracting portion corresponding to the needle pressing board to form magnetic attraction therewith. A spacer is provided between the needle plates to prevent the horizontal movement of the sinkers.

摘要翻译： 一种位于针床间隙两侧的针织机的针床结构，具有多个平行的针板，位于针板之间的多个织针和沉降片，与所配置的平行的针脚平行移动的沉降片控制部， 沉降片的方向，以及由切换部驱动的至少一个控制凸轮，以在切换运动期间推动沉降片朝向针床间隙旋转。 切换部根据移动方向进行切换动作。 针板孔至少一个针压板，以限制织针的垂直运动。 切换部具有与针压板对应的磁吸引部，与其形成磁吸引。 在针板之间设置间隔件以防止沉降片的水平移动。

公开(公告)号：US20120264281A1

公开(公告)日：2012-10-18

申请号：US13085029

申请日：2011-04-12

申请人： Jian-Hao CHEN ,  Wei-Yang LEE ,  Wei-Yeh TANG ,  Xiong-Fei YU ,  Kuang-Yuan HSU

发明人： Jian-Hao CHEN ,  Wei-Yang LEE ,  Wei-Yeh TANG ,  Xiong-Fei YU ,  Kuang-Yuan HSU

IPC分类号： H01L21/28

CPC分类号： H01L29/6659 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/32139 ,  H01L21/823437 ,  H01L21/823828 ,  H01L29/66545 ,  H01L29/7833

摘要： The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with a plurality of gate structures. An exemplary method of fabricating the plurality of gate structures comprises providing a silicon substrate; depositing a dummy oxide layer over the substrate; depositing a dummy gate electrode layer over the dummy oxide layer; patterning the layers to define a plurality of dummy gates; forming nitrogen-containing sidewall spacers on the plurality of dummy gates; forming an interlayer dielectric layer between the nitrogen-containing sidewall spacers; selectively depositing a hard mask layer on the interlayer dielectric layer by an atomic layer deposition (ALD) process; removing the dummy gate electrode layer; removing the dummy oxide layer; depositing a gate dielectric; and depositing a gate electrode.

摘要翻译： 本发明涉及集成电路制造，更具体地涉及具有多个栅极结构的半导体器件。 制造多个栅极结构的示例性方法包括提供硅衬底; 在衬底上沉积虚拟氧化物层; 在虚拟氧化物层上沉积虚拟栅电极层; 图案化层以限定多个虚拟门; 在所述多个虚拟栅极上形成含氮侧壁间隔物; 在所述含氮侧壁间隔件之间形成层间电介质层; 通过原子层沉积（ALD）工艺在层间介质层上选择性地沉积硬掩模层; 去除所述伪栅电极层; 去除虚拟氧化物层; 沉积栅极电介质; 并沉积栅电极。

公开(公告)号：US20110193180A1

公开(公告)日：2011-08-11

申请号：US12700901

申请日：2010-02-05

申请人： Jian-Hao Chen ,  Da-Yuan Lee ,  Kuang-Yuan Hsu

发明人： Jian-Hao Chen ,  Da-Yuan Lee ,  Kuang-Yuan Hsu

IPC分类号： H01L29/51 ,  H01L21/283

CPC分类号： H01L21/28194 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665

摘要： The present disclosure provides an apparatus that includes a semiconductor device. The semiconductor device includes a substrate. The semiconductor device also includes a first gate dielectric layer that is disposed over the substrate. The first gate dielectric layer includes a first material. The first gate dielectric layer has a first thickness that is less than a threshold thickness at which a portion of the first material of the first gate dielectric layer begins to crystallize. The semiconductor device also includes a second gate dielectric layer that is disposed over the first gate dielectric layer. The second gate dielectric layer includes a second material that is different from the first material. The second gate dielectric layer has a second thickness that is less than a threshold thickness at which a portion of the second material of the second gate dielectric layer begins to crystallize.

摘要翻译： 本公开提供了一种包括半导体器件的装置。 半导体器件包括衬底。 半导体器件还包括设置在衬底上的第一栅极电介质层。 第一栅介质层包括第一材料。 第一栅极介电层具有小于第一栅极电介质层的第一材料的一部分开始结晶的阈值厚度的第一厚度。 半导体器件还包括设置在第一栅极介电层上的第二栅极电介质层。 第二栅极介电层包括与第一材料不同的第二材料。 第二栅极电介质层具有小于第二栅极电介质层的第二材料的一部分开始结晶的阈值厚度的第二厚度。

公开(公告)号：US20100028965A1

公开(公告)日：2010-02-04

申请号：US11916180

申请日：2006-06-01

申请人： Dehua Liu ,  hongjuan Liu ,  Yan Sun ,  Rihui Lin ,  Jian Hao

发明人： Dehua Liu ,  hongjuan Liu ,  Yan Sun ,  Rihui Lin ,  Jian Hao

IPC分类号： C12P7/18

CPC分类号： C12P7/18 ,  C12N1/32

摘要： The invention discloses a method for producing 1,3-propanediol, comprising the steps of: using crude glycerol, a by-product during the biodiesel production, without further treatment, as the substrate for production of 1,3-propanediol; inoculating a 1,3-propanediol-producing strain in a seed medium containing crude glycerol, a by-product from biodiesel production; adding the seed culture into a fermentation medium containing crude glycerol, a by-product from biodiesel production, and fermenting; maintaining pH in a range of 6.8 to 8.0; and in the end of the fermentation, isolating and purifying 1,3-propanediol.

摘要翻译： 本发明公开了一种1,3-丙二醇的制造方法，其特征在于，在生物柴油的生产中使用副产物粗甘油，无需进一步处理，作为1,3-丙二醇的生产用基材。 在含有来自生物柴油生产的副产物的粗甘油的种子培养基中接种1,3-丙二醇生产菌株; 将种子培养物加入到含有来自生物柴油生产的副产物和发酵的粗甘油的发酵培养基中; 保持pH在6.8至8.0的范围内; 并在发酵结束时，分离和纯化1,3-丙二醇。

公开(公告)号：US09070624B2

公开(公告)日：2015-06-30

申请号：US13328875

申请日：2011-12-16

申请人： Jian-Hao Chen ,  Chia-Yu Lu ,  Tung-Heng Hsieh ,  Kuo-Feng Yu ,  Chin-Shan Hou ,  Hsien-Chin Lin ,  Shyue-Shyh Lin

发明人： Jian-Hao Chen ,  Chia-Yu Lu ,  Tung-Heng Hsieh ,  Kuo-Feng Yu ,  Chin-Shan Hou ,  Hsien-Chin Lin ,  Shyue-Shyh Lin

IPC分类号： H01L21/28 ,  H01L49/02 ,  H01L27/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423

CPC分类号： H01L21/28123 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/78

摘要： A described method includes providing a semiconductor substrate. A first gate structure is formed on the semiconductor substrate and a sacrificial gate structure formed adjacent the first gate structure. The sacrificial gate structure may be used to form a metal gate structure using a replacement gate methodology. A dielectric layer is formed overlying the first gate structure and the sacrificial gate structure. The dielectric layer has a first thickness above a top surface of the first gate structure and a second thickness, less than the first thickness, above a top surface of the sacrificial gate structure. (See, e.g., FIGS. 5, 15, 26). Thus, a subsequent planarization process of the dielectric layer may not contact the first gate structure.

摘要翻译： 所述方法包括提供半导体衬底。 第一栅极结构形成在半导体衬底上，并且邻近第一栅极结构形成牺牲栅极结构。 牺牲栅极结构可以用于使用替代栅极方法形成金属栅极结构。 覆盖第一栅极结构和牺牲栅极结构的介电层形成。 电介质层在第一栅极结构的顶表面上方具有第一厚度，并且在牺牲栅极结构的顶表面上方具有小于第一厚度的第二厚度。 （参见例如图5,15,26）。 因此，电介质层的随后的平坦化处理可能不接触第一栅极结构。

公开(公告)号：US20110256731A1

公开(公告)日：2011-10-20

申请号：US12760297

申请日：2010-04-14

申请人： Wei-Yang LEE ,  Xiong-Fei YU ,  Jian-Hao CHEN ,  Cheng-Hao HOU ,  Da-Yuan LEE ,  Kuang-Yuan HSU

发明人： Wei-Yang LEE ,  Xiong-Fei YU ,  Jian-Hao CHEN ,  Cheng-Hao HOU ,  Da-Yuan LEE ,  Kuang-Yuan HSU

IPC分类号： H01L21/3105 ,  H01L21/316

CPC分类号： H01L29/517 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28194 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/6659

摘要： A method for fabricating the gate dielectric layer comprises forming a high-k dielectric layer over a substrate; forming an oxygen-containing layer on the high-k dielectric layer by an atomic layer deposition process; and performing an inert plasma treatment on the oxygen-containing layer.

摘要翻译： 一种用于制造栅极电介质层的方法包括在衬底上形成高k电介质层; 通过原子层沉积工艺在高k电介质层上形成含氧层; 对含氧层进行惰性等离子体处理。

公开(公告)号：USD632940S1

公开(公告)日：2011-02-22

申请号：US29360899

申请日：2010-05-03

申请人： Yuji Yamamoto ,  Jian Hao

设计人： Yuji Yamamoto ,  Jian Hao

公开(公告)号：US09257225B2

公开(公告)日：2016-02-09

申请号：US12166322

申请日：2008-07-02

申请人： Chun Li ,  Jason (Jian Hao) Li ,  Ran Ran Li

发明人： Chun Li ,  Jason (Jian Hao) Li ,  Ran Ran Li

IPC分类号： H01F21/04 ,  H01F27/28 ,  H01F21/02 ,  H01F27/38 ,  H01F3/12 ,  H01F38/16

CPC分类号： H01F27/385 ,  H01F3/12 ,  H01F38/16

摘要： The LC combined transformer is a combination of capacitors, inductors and an electrically-isolated mutual inductor, i.e. conventional transformer; which in principle is a unity-coupled mutual capacitor or a cascade connection of an ideal transformer and unity-coupled mutual capacitor(s). To improve the imperfections of widely-used transformers, by employing the simplest passive-circuit design to attain a perfectly-functional match between mutual capacitors and the mutual inductor, this invention achieves optimal features of current or/and voltage transformation, and introduces a new function of waveform conversion from square to quasi-sine. The ideal current transformer herein is suitable for sinusoidal current measurements, the ideal voltage transformer herein suitable for sinusoidal voltage measurements, and they also could be upgraded to ideal transformers for both current and voltage transformations. This transformer can be designed as power transferable as well as waveform convertible, applicable in power systems or power electronics. Herein also states the design approach of integrated inductor and mutual inductor, and the use of push-pull inductor, materials being fully utilized and sizes decreased.

摘要翻译： LC组合变压器是电容器，电感器和电隔离互感器的组合，即常规变压器; 其原理上是单相耦合互电容器或理想变压器和单相耦合互电容器的级联连接。 为了改善广泛使用的变压器的缺陷，通过采用最简单的无源电路设计，实现互电容和互感器之间的完美功能匹配，本发明实现了电流或/和电压转换的最佳特性，并引入了新的 从正方形到准正弦的波形转换功能。 本文中理想的电流互感器适用于正弦电流测量，本文中的理想电压互感器适用于正弦电压测量，并且还可升级为用于电流和电压转换的理想变压器。 该变压器可以设计为可转换的以及波形转换，适用于电力系统或电力电子设备。 这里还介绍了集成电感和互感器的设计方法，以及推挽式电感器的使用，充分利用材料和尺寸减小。