公开(公告)号：US20080124909A1

公开(公告)日：2008-05-29

申请号：US11983513

申请日：2007-11-09

Applicant: Keum-Joo Lee ,  Jin-Hye Bae ,  Dae-Keun Kang

Inventor： Keum-Joo Lee ,  Jin-Hye Bae ,  Dae-Keun Kang

IPC: H01L21/28 ,  B08B3/04

CPC classification number: C11D11/0047 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/08 ,  H01L21/02071 ,  H01L21/28061 ,  H01L21/28247 ,  H01L29/6656

Abstract: The present invention provides methods of cleaning a semiconductor device by removing contaminants, such as particles and/or etching by-products, from a structure of a semiconductor device using a first cleaning solution including a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and deionized (DI) water, and a second cleaning solution including ozone (O3) water. The present invention also provides methods of manufacturing a semiconductor device using these methods of cleaning the semiconductor device.

Abstract translation: 本发明提供了通过使用包括氢氧化铵（NH 4）4的混合物的第一清洗溶液从半导体器件的结构去除诸如颗粒和/或蚀刻副产物的污染物来清洁半导体器件的方法， OH），过氧化氢（H 2 O 2 O 2）和去离子（DI）水，以及包含臭氧（O 3）的第二清洗溶液， SUB>）水。 本发明还提供了使用这些清洁半导体器件的方法制造半导体器件的方法。

公开(公告)号：US20070004218A1

公开(公告)日：2007-01-04

申请号：US11476746

申请日：2006-06-29

Applicant: Keum-Joo Lee ,  Jin-Hye Bae ,  In-Seak Hwang

Inventor： Keum-Joo Lee ,  Jin-Hye Bae ,  In-Seak Hwang

IPC: H01L21/302

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L27/10852 ,  H01L28/91

Abstract: Example embodiments of the present invention relate to a method of cleaning a semiconductor device and a method of manufacturing a semiconductor device using the same. Other example embodiments of the present invention relate to a method of cleaning a semiconductor device by removing a residual organic compound and a method of manufacturing a semiconductor device using the same. An oxide layer including an opening may be formed on a substrate. A conductive layer may be formed in the opening. The oxide layer may be removed using an etching solution including an organic compound. A residual organic compound adhered to the substrate and the conductive layer may be removed using an ozone solution. The residual organic compound and an etching residue may be removed by the cleaning process using the ozone solution.

Abstract translation: 本发明的示例性实施例涉及一种清洁半导体器件的方法和使用其制造半导体器件的方法。 本发明的其他示例性实施例涉及通过去除残留的有机化合物来清洁半导体器件的方法，以及使用其制造半导体器件的方法。 包括开口的氧化物层可以形成在基板上。 可以在开口中形成导电层。 可以使用包括有机化合物的蚀刻溶液除去氧化物层。 可以使用臭氧溶液除去附着在基材和导电层上的残留有机化合物。 可以通过使用臭氧溶液的清洗方法除去残留的有机化合物和蚀刻残留物。

公开(公告)号：US20150179927A1

公开(公告)日：2015-06-25

申请号：US14449408

申请日：2014-08-01

Applicant: Jin-Hye BAE ,  Won-Jun LEE ,  Sung-Yoon CHUNG ,  Taek-Dong CHUNG

Inventor： Jin-Hye BAE ,  Won-Jun LEE ,  Sung-Yoon CHUNG ,  Taek-Dong CHUNG

IPC: H01L43/12 ,  H01L43/10

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10

Abstract: In a method of detecting an etch by-product, the method including forming a magnetic layer including palladium (Pd) on a substrate; etching the magnetic layer to form a magnetic layer pattern; depositing a mixture including an alkyl bromide compound on a surface of the magnetic layer pattern; and measuring a current difference between the substrate and the mixture to detect an etch by-product on the surface of the magnetic layer pattern.

Abstract translation: 在检测蚀刻副产物的方法中，所述方法包括在基底上形成包括钯（Pd）的磁性层; 蚀刻磁性层以形成磁性层图案; 在所述磁性层图案的表面上沉积包含烷基溴化合物的混合物; 并测量衬底和混合物之间的电流差以检测磁性层图案表面上的蚀刻副产物。

公开(公告)号：US07582539B2

公开(公告)日：2009-09-01

申请号：US11983513

申请日：2007-11-09

Applicant: Keum-Joo Lee ,  Jin-Hye Bae ,  Dae-Keun Kang

Inventor： Keum-Joo Lee ,  Jin-Hye Bae ,  Dae-Keun Kang

IPC: H01L21/76

CPC classification number: C11D11/0047 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/08 ,  H01L21/02071 ,  H01L21/28061 ,  H01L21/28247 ,  H01L29/6656

Abstract: The present invention provides methods of cleaning a semiconductor device by removing contaminants, such as particles and/or etching by-products, from a structure of a semiconductor device using a first cleaning solution including a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and deionized (DI) water, and a second cleaning solution including ozone (O3) water. The present invention also provides methods of manufacturing a semiconductor device using these methods of cleaning the semiconductor device.

Abstract translation: 本发明提供了通过使用包括氢氧化铵（NH 4 OH），过氧化氢（NH 4 OH）的混合物的第一清洗溶液从半导体器件的结构去除诸如颗粒和/或蚀刻副产物的污染物来清洁半导体器件的方法， H 2 O 2）和去离子（DI）水，以及包含臭氧（O 3）水的第二清洗溶液。 本发明还提供了使用这些清洁半导体器件的方法制造半导体器件的方法。

公开(公告)号：US20170148979A1

公开(公告)日：2017-05-25

申请号：US15259198

申请日：2016-09-08

Applicant: Ho-Young KIM ,  Jin-Hye BAE ,  Hoon HAN ,  Won-Jun LEE ,  Chang-Kyu LEE ,  Geun-Joo BAEK ,  Jung-Ig JEON

Inventor： Ho-Young KIM ,  Jin-Hye BAE ,  Hoon HAN ,  Won-Jun LEE ,  Chang-Kyu LEE ,  Geun-Joo BAEK ,  Jung-Ig JEON

IPC: H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A composition for cleaning a magnetic pattern, a method of manufacturing a magnetic memory device, a method of forming a magnetic pattern, and a magnetic memory device, the composition including a glycol ether-based organic solvent; a decomposing agent that includes an aliphatic amine; and at least one of a chelating agent, or a cleaning accelerator that includes an organic alkaline compound, wherein the composition is devoid of water.

公开(公告)号：US20100173470A1

公开(公告)日：2010-07-08

申请号：US12654933

申请日：2010-01-08

Applicant: Mong-Sup Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Jin-Hye Bae ,  Bo-Wo Choi ,  Seung-Jae Lee

Inventor： Mong-Sup Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Jin-Hye Bae ,  Bo-Wo Choi ,  Seung-Jae Lee

IPC: H01L21/762 ,  H01L21/3105

CPC classification number: H01L21/3125 ,  C08G77/62 ,  C09D183/02 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/316 ,  H01L21/76229

Abstract: In a method of forming a silicon oxide layer, a spin-on-glass (SOG) layer may be formed on an object including a recess using an SOG composition. The SOG layer may be pre-baked and then cured by contacting with at least one material selected from the group consisting of water, a basic material and an oxidant, under a pressure of from about 1.5 atm to about 100 atm. The cured SOG layer may be baked.

Abstract translation: 在形成氧化硅层的方法中，可以使用SOG组合物在包括凹部的物体上形成旋涂玻璃（SOG）层。 可以在约1.5atm至约100atm的压力下，预先将SOG层与至少一种选自水，碱性物质和氧化剂的材料接触固化，然后固化。 固化的SOG层可以被烘烤。

公开(公告)号：US20080017908A1

公开(公告)日：2008-01-24

申请号：US11826590

申请日：2007-07-17

Applicant: Min-hee Cho ,  Sung-eui Kim ,  Won-tae Hwang ,  Jin-hye Bae

Inventor： Min-hee Cho ,  Sung-eui Kim ,  Won-tae Hwang ,  Jin-hye Bae

IPC: H01L29/94 ,  H01L21/8242

CPC classification number: H01L28/90 ,  H01L27/10817 ,  H01L27/10855

Abstract: Exemplary embodiments relate to a semiconductor memory device and method of fabricating the same. The semiconductor member device may include a semiconductor substrate, a plurality of storage node contact plugs formed above the semiconductor substrate, and a plurality of storage node electrodes, each of the plurality of storage node electrodes may be located respectively above each of the plurality of storage node contact plugs. Each of the storage node electrodes may include a cylindrical body and a generally Y-shaped connection portion extending from the cylindrical body and interfacing the storage node contact plugs.

Abstract translation: 示例性实施例涉及一种半导体存储器件及其制造方法。 半导体构件装置可以包括半导体衬底，形成在半导体衬底上的多个存储节点接触插塞和多个存储节点电极，多个存储节点电极中的每一个可以分别位于多个存储器中的每一个上 节点接触插头。 每个存储节点电极可以包括圆柱形主体和从圆柱形主体延伸并且与存储节点接触插塞接口的大致Y形的连接部分。