公开(公告)号：US20100173470A1

公开(公告)日：2010-07-08

申请号：US12654933

申请日：2010-01-08

申请人： Mong-Sup Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Jin-Hye Bae ,  Bo-Wo Choi ,  Seung-Jae Lee

发明人： Mong-Sup Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Jin-Hye Bae ,  Bo-Wo Choi ,  Seung-Jae Lee

IPC分类号： H01L21/762 ,  H01L21/3105

CPC分类号： H01L21/3125 ,  C08G77/62 ,  C09D183/02 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/316 ,  H01L21/76229

摘要： In a method of forming a silicon oxide layer, a spin-on-glass (SOG) layer may be formed on an object including a recess using an SOG composition. The SOG layer may be pre-baked and then cured by contacting with at least one material selected from the group consisting of water, a basic material and an oxidant, under a pressure of from about 1.5 atm to about 100 atm. The cured SOG layer may be baked.

摘要翻译： 在形成氧化硅层的方法中，可以使用SOG组合物在包括凹部的物体上形成旋涂玻璃（SOG）层。 可以在约1.5atm至约100atm的压力下，预先将SOG层与至少一种选自水，碱性物质和氧化剂的材料接触固化，然后固化。 固化的SOG层可以被烘烤。

公开(公告)号：US08835020B2

公开(公告)日：2014-09-16

申请号：US12591796

申请日：2009-12-01

申请人： Seung-Jae Lee ,  In-Bum Song ,  Jung-Keun Kim ,  Do-Han Kim ,  Chun-Gun Park ,  Hyoung-Yun Oh ,  Jong-Kwan Bin ,  Kyung-Hoon Lee ,  Hyun-Cheol Jeong ,  Dong-Hee Yoo ,  Nam-Sung Cho ,  Jong-Hyun Park ,  In-Sun Yoo ,  Tae-Han Park ,  Soon-Wook Cha

发明人： Seung-Jae Lee ,  In-Bum Song ,  Jung-Keun Kim ,  Do-Han Kim ,  Chun-Gun Park ,  Hyoung-Yun Oh ,  Jong-Kwan Bin ,  Kyung-Hoon Lee ,  Hyun-Cheol Jeong ,  Dong-Hee Yoo ,  Nam-Sung Cho ,  Jong-Hyun Park ,  In-Sun Yoo ,  Tae-Han Park ,  Soon-Wook Cha

IPC分类号： H01L51/54 ,  C09K11/06 ,  H01L51/00 ,  H05B33/14 ,  C07C211/61 ,  C07C255/58 ,  H01L51/50

CPC分类号： C09K11/06 ,  C07C211/61 ,  C07C255/58 ,  C07C2603/50 ,  C09K2211/1011 ,  C09K2211/1014 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/5012 ,  H05B33/14 ,  Y10S428/917

摘要： A blue fluorescent compound includes a host material being capable of transporting an electron or a hole; and a dopant material represented by following Formula 1: wherein at least two of the R1, the R2, the R3, and the R4 are selected from substituted or non-substituted aromatic group or substituted or non-substituted heterocyclic group, and the R5 is selected from substituted or non-substituted aromatic group or substituted or non-substituted heterocyclic group.

摘要翻译： 蓝色荧光化合物包括能够输送电子或孔的主体材料; 和由下式1表示的掺杂剂材料：其中R1，R2，R3和R4中的至少两个选自取代或未取代的芳族基团或取代或未取代的杂环基，R5是 选自取代或未取代的芳族基团或取代或未取代的杂环基团。

公开(公告)号：US08683610B2

公开(公告)日：2014-03-25

申请号：US13566700

申请日：2012-08-03

申请人： Seung-Jae Lee ,  Te-Hyun Kim

发明人： Seung-Jae Lee ,  Te-Hyun Kim

IPC分类号： G06F7/04

CPC分类号： H04L9/3273 ,  G06F21/10 ,  H04L9/3247 ,  H04L63/0428 ,  H04L63/10 ,  H04L63/12 ,  H04L2209/603 ,  H04L2463/062 ,  H04L2463/101

摘要： A terminal for managing digital rights of a memory card inserted into the terminal and has a processor and a memory, the digital rights allowing the terminal to access digital contents. The terminal includes a processor configured to manage a digital rights and to exchange information with the memory card, the information including a terminal ID and a memory card ID; perform a mutual authentication procedure with the memory card; receive, from a contents provider, a trigger message which indicates to the terminal that a digital rights for the memory card is prepared in the contents provider; if a parameter included in the trigger message does not indicate the memory card, perform a procedure for obtaining a digital rights for the terminal; and if a parameter included in the trigger message indicates the memory card, perform a procedure for requesting a digital rights for the memory card.

摘要翻译： 一种用于管理插入终端中的存储卡的数字版权的终端，具有处理器和存储器，该数字版权允许终端访问数字内容。 终端包括处理器，被配置为管理数字版权并与存储卡交换信息，该信息包括终端ID和存储卡ID; 与存储卡执行相互认证程序; 从内容提供者接收触发消息，向终端指示在内容提供商中准备存储卡的数字版权; 如果包括在触发消息中的参数不指示存储卡，则执行用于获得终端的数字版权的过程; 并且如果包括在触发消息中的参数指示存储卡，则执行请求存储卡的数字版权的过程。

公开(公告)号：US08617991B2

公开(公告)日：2013-12-31

申请号：US13526960

申请日：2012-06-19

申请人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

发明人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

IPC分类号： H01L21/44

CPC分类号： H01L29/4983 ,  H01L21/76895 ,  H01L21/82345 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

摘要翻译： 一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层 在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案 第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

公开(公告)号：US08486160B2

公开(公告)日：2013-07-16

申请号：US12960415

申请日：2010-12-03

申请人： Po-Jung Hwang ,  Seung-Jae Lee ,  Yoo-Myung Kang ,  Jae-Do Ahn ,  Jae-Min Yang ,  Jeong-Heon Lee ,  Byeong-Yeol Song ,  Jae-Hyun Hwang ,  Sung-Soo Kim ,  Sae-Weon Roh

发明人： Po-Jung Hwang ,  Seung-Jae Lee ,  Yoo-Myung Kang ,  Jae-Do Ahn ,  Jae-Min Yang ,  Jeong-Heon Lee ,  Byeong-Yeol Song ,  Jae-Hyun Hwang ,  Sung-Soo Kim ,  Sae-Weon Roh

IPC分类号： H01M2/14 ,  H01M2/02 ,  H01M10/02 ,  H01M10/04

CPC分类号： H01M2/1673 ,  H01M2/021 ,  H01M2/0212 ,  H01M2/18 ,  H01M10/0413 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0585 ,  Y02T10/7011 ,  Y10T29/49114

摘要： A rechargeable battery comprises: an electrode assembly comprising a plurality of positive electrode plates, a plurality of negative electrode plates, and a plurality of separators; and a case enclosing the electrode assembly; wherein each separator in the plurality of separators comprises a central portion facing at least one of the positive and negative electrode plates, and an extended portion that extends past the positive and negative electrode plates, and wherein each of the extended portion comprises an adhered portion that is adhered to adjacent extended portions.

摘要翻译： 可再充电电池包括：电极组件，包括多个正极板，多个负极板和多个隔板; 以及包围所述电极组件的壳体; 其中所述多个分离器中的每个分离器包括面向所述正极板和所述正极板中的至少一个的中心部分和延伸穿过所述正极板和所述负极板的延伸部分，并且其中每个所述延伸部分包括粘附部分， 粘附到相邻的延伸部分。

公开(公告)号：US20120193672A1

公开(公告)日：2012-08-02

申请号：US13445455

申请日：2012-04-12

申请人： Yu-Sik Kim ,  Seong-Deok Hwang ,  Seung-Jae Lee ,  Sun-Pil Youn

发明人： Yu-Sik Kim ,  Seong-Deok Hwang ,  Seung-Jae Lee ,  Sun-Pil Youn

IPC分类号： H01L33/36

CPC分类号： H01L33/58 ,  H01L24/32 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/22 ,  H01L33/50 ,  H01L2224/06102 ,  H01L2224/13 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00011 ,  H01L2224/45099

摘要： Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region.

摘要翻译： 提供了一种制造具有改进的光提取效率的发光装置的方法和使用该方法制造的发光装置。 该方法包括：制备单晶基板; 在所述基板上形成中间结构，所述中间结构包括发光结构，所述发光结构包括依次堆叠的第一导电类型的第一导电图案，发光图案和第二导电类型的第二导电图案，第一导电图案 电连接到第一导电图案的电极和与第二导电图案电连接的第二电极; 通过在水平方向上将激光束照射到基板上，使得激光束聚焦在基板内的光束聚焦点上，形成沿水平方向延伸的多晶区域; 以及沿着多晶区沿水平方向切割基板。

公开(公告)号：US07930250B2

公开(公告)日：2011-04-19

申请号：US11760571

申请日：2007-06-08

申请人： Seung-Jae Lee ,  Te-Hyun Kim ,  Youn-Sung Chu ,  Kiran Kumar Keshavamurthy

发明人： Seung-Jae Lee ,  Te-Hyun Kim ,  Youn-Sung Chu ,  Kiran Kumar Keshavamurthy

IPC分类号： G06F21/00

CPC分类号： G06F21/10

摘要： A method for managing a specific domain (or user domain), for example leaving the domain by a specific device after fully returning a Rights Object (RO) taken by the specific device, instead of deactivating the RO, when leaving the specific domain, the method in which the device desiring to leave the specific domain moves its RO to another device desiring to join the specific domain and thereafter leaves the specific domain under the control of a Domain Authority/Domain Enforcement Agent (DA/DEA).

摘要翻译： 一种用于管理特定域（或用户域）的方法，例如在完全返回特定设备所采用的权限对象（RO）之后由特定设备离开域，而不是在离开特定域时停用RO 方法，其中期望离开特定域的设备将其RO移动到希望加入特定域的另一个设备，然后将特定域保留在域授权/域强制代理（DA / DEA）的控制之下。

公开(公告)号：US20110086262A1

公开(公告)日：2011-04-14

申请号：US12860692

申请日：2010-08-20

申请人： Jun-Sik Kim ,  Po-Jung Hwang ,  Seung-Jae Lee ,  Yoo-Myung Kang ,  Sung-Soo Kim

发明人： Jun-Sik Kim ,  Po-Jung Hwang ,  Seung-Jae Lee ,  Yoo-Myung Kang ,  Sung-Soo Kim

IPC分类号： H01M2/02

CPC分类号： H01M2/0212 ,  H01M2/0277 ,  H01M2/0285 ,  H01M2/0287 ,  H01M2/266 ,  H01M2/30

摘要： A rechargeable battery is disclosed. The rechargeable battery comprises: a central electrode portion comprising a positive electrode, a negative electrode and a separator; a first electrode portion extending from a first end of the central electrode portion; a second electrode portion extending from a second end of the central electrode portion opposite the first end; a central case enclosing the central electrode portion; a first electrode case enclosing the first electrode portion, wherein the first electrode case is coupled to the central case such that an overlapping part of the first electrode case encloses a part of the central electrode portion at the first end, and the central case encloses the overlapping part of the first electrode case; and a second electrode case enclosing the second electrode portion, wherein the second electrode case is coupled to the central case such that an overlapping part of the second electrode case encloses a part of the central electrode portion at the second end, and the central case encloses the overlapping part of the second electrode case.

摘要翻译： 公开了可充电电池。 可充电电池包括：中心电极部分，包括正极，负极和隔板; 从所述中心电极部的第一端延伸的第一电极部; 从所述中心电极部分的与所述第一端相对的第二端延伸的第二电极部分; 封闭中心电极部分的中心壳体; 包围第一电极部分的第一电极壳体，其中第一电极壳体联接到中心壳体，使得第一电极壳体的重叠部分在第一端处包围中心电极部分的一部分，并且中心壳体包围 第一电极壳的重叠部分; 以及封闭所述第二电极部分的第二电极壳体，其中所述第二电极壳体联接到所述中央壳体，使得所述第二电极壳体的重叠部分在所述第二端处包围所述中心电极部分的一部分，并且所述中央壳体包围 第二电极壳体的重叠部分。

公开(公告)号：US07920420B2

公开(公告)日：2011-04-05

申请号：US12000209

申请日：2007-12-11

申请人： Seung-Jae Lee

发明人： Seung-Jae Lee

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3454 ,  G11C2211/5621

摘要： A method of programming a flash memory device may include dividing a plurality of memory cells into a plurality of groups according to a threshold voltage state, the memory cells configured to store multi bit data. The plurality of memory cells may be programmed with a program data. The memory cells of the divided groups may be respectively selected and programmed by divided group during the programming of the plurality of memory cells.

摘要翻译： 一种对闪速存储器件进行编程的方法可以包括根据阈值电压状态将多个存储器单元分成多个组，存储器单元被配置为存储多位数据。 多个存储器单元可以用程序数据编程。 在多个存储单元的编程期间，分割组的存储单元可以分别被分组选择和编程。

公开(公告)号：US07903467B2

公开(公告)日：2011-03-08

申请号：US12007217

申请日：2008-01-08

申请人： Seung-Jae Lee

发明人： Seung-Jae Lee

IPC分类号： G11C16/34

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C2211/5621

摘要： A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method includes selecting at least one of the memory cells to be programmed, and programming the at least one selected memory cell to a voltage higher than a verify voltage, wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.

摘要翻译： 一种通过选择性地将其阈值电压分布从第一分布改变到第二分布来对闪速存储器件的多个存储器单元进行编程的方法，所述方法包括选择要被编程的存储器单元中的至少一个， 至少一个所选择的存储单元至高于验证电压的电压，其中所述验证电压是包括在所述第一分布中的阈值电压之一或高于所述第一分布中包括的阈值电压。