利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

33 条记录 (耗时 0.021 秒)

    VERTICAL NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    VERTICAL NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    基于硝酸盐的垂直发光二极管及其制造方法

    公开(公告)号：US20100090246A1

    公开(公告)日：2010-04-15

    申请号：US12328142

    申请日：2008-12-04

    申请人： Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

    发明人： Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

    IPC分类号： H01L33/00 ,  H01L21/18

    CPC分类号： H01L33/62 ,  H01L21/268 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

    摘要翻译： 提供了包括第一电极的垂直氮化物基LED; 设置在所述第一电极上的第一氮化物半导体层; 设置在所述第一氮化物半导体层上的有源层; 设置在所述有源层上的第二氮化物半导体层; 设置在所述第二氮化物半导体层上的欧姆接触图案; 设置在所述欧姆接触图案上的第二电极; 以及与第二电极电连接并设置在第二氮化物半导体层上的接合焊盘。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号：US20090085043A1

    公开(公告)日：2009-04-02

    申请号：US12210472

    申请日：2008-09-15

    申请人： Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

    发明人： Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32

    摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

    摘要翻译： 公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

    Light emitting device and package having the same
    5.
    发明申请
    Light emitting device and package having the same 有权
    发光器件和封装具有相同的功能

    公开(公告)号：US20080237622A1

    公开(公告)日：2008-10-02

    申请号：US12071980

    申请日：2008-02-28

    申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

    发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

    IPC分类号： H01L33/00

    CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

    摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

    摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 有权
    半导体发光器件，其制造方法和使用该半导体发光器件的半导体发光器件封装

    公开(公告)号：US20110241066A1

    公开(公告)日：2011-10-06

    申请号：US13163107

    申请日：2011-06-17

    申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    IPC分类号： H01L33/36

    CPC分类号： H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

    摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

    摘要翻译： 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

    Nitride semiconductor light emitting device and manufacturing method of the same
    10.
    发明授权
    Nitride semiconductor light emitting device and manufacturing method of the same 有权
    氮化物半导体发光器件及其制造方法相同

    公开(公告)号：US07928467B2

    公开(公告)日：2011-04-19

    申请号：US12216568

    申请日：2008-07-08

    申请人： Hyun Soo Kim ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Cheol Soo Sone ,  Yu Seung Kim

    发明人： Hyun Soo Kim ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Cheol Soo Sone ,  Yu Seung Kim

    IPC分类号： H01L33/00 ,  H01L33/42

    CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

    摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.

    摘要翻译： 提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上 第一层并由透明导电氧化物形成。 包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。 此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。