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47 条记录 (耗时 0.02 秒)

    Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
    4.
    发明申请
    Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS 有权
    腐蚀后去除间隔物的方法，以增强接触蚀刻停止衬垫在MOS上的应力

    公开(公告)号：US20060249794A1

    公开(公告)日：2006-11-09

    申请号：US11122666

    申请日：2005-05-04

    申请人： Young Teh ,  Yong Lee ,  Chung Lai ,  Wenhe Lin ,  Khee Lim ,  Wee Tan ,  John Sudijono ,  Hui Koh ,  Liang Hsia

    发明人： Young Teh ,  Yong Lee ,  Chung Lai ,  Wenhe Lin ,  Khee Lim ,  Wee Tan ,  John Sudijono ,  Hui Koh ,  Liang Hsia

    IPC分类号： H01L29/772 ,  H01L21/8238

    CPC分类号： H01L21/823807 ,  H01L21/823864

    摘要： An example process to remove spacers from the gate of a NMOS transistor. A stress creating layer is formed over the NMOS and PMOS transistors and the substrate. In an embodiment, the spacers on gate are removed so that stress layer is closer to the channel of the device. The stress creating layer is preferably a tensile nitride layer. The stress creating layer is preferably a contact etch stop liner layer. In an embodiment, the gates, source and drain region have an silicide layer thereover before the stress creating layer is formed. The embodiment improves the performance of the NMOS transistors.

    摘要翻译： 从NMOS晶体管的栅极去除间隔物的示例性过程。 在NMOS和PMOS晶体管和衬底上形成应力产生层。 在一个实施例中，栅极上的间隔物被去除，使得应力层更靠近器件的通道。 应力产生层优选为拉伸氮化物层。 应力产生层优选为接触蚀刻停止衬层。 在一个实施例中，栅极，源极和漏极区域在形成应力产生层之前具有硅化物层。 该实施例改善了NMOS晶体管的性能。

    Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication
    5.
    发明申请
    Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication 有权
    用于双重镶嵌制造中Cu阻挡层和蚀刻停止层的氧掺杂SiC

    公开(公告)号：US20060202343A1

    公开(公告)日：2006-09-14

    申请号：US11410718

    申请日：2006-04-25

    申请人： Liu Huang ,  John Sudijono ,  Koh Wee

    发明人： Liu Huang ,  John Sudijono ,  Koh Wee

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76835 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

    摘要： A method of forming a dual damascene structure with improved performance is described. A first etch stop layer comprised of oxygen doped SiC is deposited on a SiC barrier layer to form a composite barrier/etch stop layer on a substrate. The remainder of the damascene stack is formed by sequentially depositing a first dielectric layer, a second oxygen doped SiC etch stop layer, and a second dielectric layer. A via and overlying trench are formed and filled with a diffusion barrier layer and a metal layer. The oxygen doped SiC layers have a lower dielectric constant than SiC or SiCN and a higher breakdown field than SiC. The etch selectivity of a C4F8/Ar etch for a SiCOH layer relative to the oxygen doped SiC layer is at least 6:1 because of a lower oxygen content in the oxygen doped SiC layer.

    摘要翻译： 描述了一种形成具有改进性能的双镶嵌结构的方法。 由氧掺杂的SiC构成的第一蚀刻停止层沉积在SiC阻挡层上，以在衬底上形成复合势垒/蚀刻停止层。 镶嵌层的剩余部分通过依次沉积第一介电层，第二氧掺杂的SiC蚀刻停止层和第二介电层而形成。 形成通孔和上覆沟槽并填充有扩散阻挡层和金属层。 氧掺杂的SiC层具有比SiC或SiCN更低的介电常数和比SiC更高的击穿场。 对于SiCOH层，相对于氧掺杂的SiC层，C 4 Si 8 N / Ar蚀刻的蚀刻选择性至少为6:1，因为氧含量低 氧掺杂的SiC层。

    Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication
    7.
    发明申请
    Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication 有权
    用于双重镶嵌制造中Cu阻挡层和蚀刻停止层的氧掺杂SiC

    公开(公告)号：US20050184295A1

    公开(公告)日：2005-08-25

    申请号：US10785520

    申请日：2004-02-24

    申请人： Liu Huang ,  John Sudijono ,  Koh Wee

    发明人： Liu Huang ,  John Sudijono ,  Koh Wee

    IPC分类号： H01L21/768 ,  H01L23/52 ,  H01L23/532

    CPC分类号： H01L21/76835 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

    摘要： A method of forming a dual damascene structure with improved performance is described. A first etch stop layer comprised of oxygen doped SiC is deposited on a SiC barrier layer to form a composite barrier/etch stop layer on a substrate. The remainder of the damascene stack is formed by sequentially depositing a first dielectric layer, a second oxygen doped SiC etch stop layer, and a second dielectric layer. A via and overlying trench are formed and filled with a diffusion barrier layer and a metal layer. The oxygen doped SiC layers have a lower dielectric constant than SiC or SIGN and a higher breakdown field than SiC. The etch selectivity of a C4F8/Ar etch for a SiCOH layer relative to the oxygen doped SiC layer is at least 6:1 because of a lower oxygen content in the oxygen doped SiC layer.

    摘要翻译： 描述了一种形成具有改进性能的双镶嵌结构的方法。 由氧掺杂的SiC构成的第一蚀刻停止层沉积在SiC阻挡层上，以在衬底上形成复合势垒/蚀刻停止层。 镶嵌层的剩余部分通过依次沉积第一介电层，第二氧掺杂的SiC蚀刻停止层和第二介电层而形成。 形成通孔和上覆沟槽并填充有扩散阻挡层和金属层。 氧掺杂的SiC层具有比SiC或SIGN更低的介电常数和比SiC更高的击穿场。 对于SiCOH层，相对于氧掺杂的SiC层，C 4 Si 8 N / Ar蚀刻的蚀刻选择性为至少6:1，因为氧含量低 氧掺杂的SiC层。