公开(公告)号：US09083572B2

公开(公告)日：2015-07-14

申请号：US13291490

申请日：2011-11-08

申请人： Joo Han Kim ,  Chae Man Lim

发明人： Joo Han Kim ,  Chae Man Lim

IPC分类号： H04K1/10 ,  H04L27/28 ,  H04L25/02

CPC分类号： H04L25/022 ,  H04L25/0224

摘要： A method and apparatus for estimating a channel efficiently though pilot subcarrier signal transformation and noise reduction in the mobile communication system are provided. The apparatus includes a time domain transformer for transforming received pilot subcarrier signals to time domain signals, a noise reducer for reducing noises of the time domain signals, a frequency domain transformer for transforming the noise-reduced time domain signals to frequency domain signals, and a final channel estimator for estimating channel values of data subcarriers received using the frequency domain signals. The channel estimation method and apparatus of improves performance with the reduction of computational complexity.

摘要翻译： 提供了一种通过导频子载波信号变换和噪声降低来有效地估计信道的方法和装置。 该装置包括用于将接收到的导频子载波信号变换为时域信号的时域变换器，用于减少时域信号噪声的降噪器，用于将噪声降低的时域信号变换为频域信号的频域变换器，以及 用于估计使用频域信号接收的数据子载波的信道值的最终信道估计器。 信道估计方法和装置通过降低计算复杂度来提高性能。

公开(公告)号：US08952376B2

公开(公告)日：2015-02-10

申请号：US13049547

申请日：2011-03-16

申请人： Je-Hun Lee ,  Joo-Han Kim

发明人： Je-Hun Lee ,  Joo-Han Kim

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L31/00 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/78648 ,  H01L29/78696

摘要： A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a first gate electrode and an active layer including a crystalline oxide semiconductor which is insulated from the first gate electrode by a first insulating layer and the active layer is arranged to overlap the first gate electrode. A source electrode is formed including at least a portion overlaps the active layer, and a drain electrode is arranged being spaced apart from the source electrode and at least a portion of the drain electrode overlaps the active layer, wherein the source electrode and the drain electrode are insulated from the first gate electrode by the first insulating layer.

摘要翻译： 提供薄膜晶体管及其制造方法。 薄膜晶体管包括第一栅电极和有源层，其包括通过第一绝缘层与第一栅电极绝缘的结晶氧化物半导体，并且有源层布置成与第一栅电极重叠。 源极电极形成为包括至少一部分与有源层重叠的部分，并且排列电极被布置成与源电极间隔开，并且漏电极的至少一部分与有源层重叠，其中源电极和漏电极 通过第一绝缘层与第一栅极绝缘。

公开(公告)号：US08450742B2

公开(公告)日：2013-05-28

申请号：US13026403

申请日：2011-02-14

申请人： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

发明人： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

IPC分类号： H01L29/786

CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

摘要： A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

公开(公告)号：US20130020053A1

公开(公告)日：2013-01-24

申请号：US13489697

申请日：2012-06-06

申请人： Seung Mun You ,  Joo Han Kim ,  Sang M. Kwark ,  Jesse Jaejin Kim

发明人： Seung Mun You ,  Joo Han Kim ,  Sang M. Kwark ,  Jesse Jaejin Kim

IPC分类号： F28D15/02 ,  F28F13/18

CPC分类号： H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and fabrication methods are disclosed for a heat spreader to cool a device. The heat spreader has first and second opposing proximal surfaces defining a chamber having a liquid therein; and one or more structures mounted in the chamber to induce a liquid flow pattern during a boiling of the liquid to distribute heat.

摘要翻译： 公开了散热器来冷却器件的系统和制造方法。 散热器具有限定其中具有液体的腔室的第一和第二相对的近侧表面; 以及一个或多个结构，其安装在腔室中以在液体沸腾期间引起液体流动图案以分配热量。

公开(公告)号：US08278661B2

公开(公告)日：2012-10-02

申请号：US12206327

申请日：2008-09-08

申请人： Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Sung-Haeng Cho ,  Ki-Hun Jeong ,  Seung-Hwan Shim

发明人： Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Sung-Haeng Cho ,  Ki-Hun Jeong ,  Seung-Hwan Shim

IPC分类号： G06F3/038

CPC分类号： H01L29/78669 ,  G09G3/3233 ,  G09G2300/0439 ,  G09G2300/0842 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

摘要： A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon.

摘要翻译： 显示装置及其制造方法包括第一薄膜晶体管，其包括第一控制电极，设置在第一控制电极上的第一半导体，以及在第一半导体上彼此相对的第一输入电极和第一输出电极; 以及第二薄膜晶体管，其包括第二控制电极，设置在第二控制电极上的第二半导体，以及在第二半导体上彼此相对的第二输入电极和第二输出电极，其中第一半导体包括第一下半导体 包括多晶硅，以及设置在所述第一下半导体上的第一上半导体，所述第一上半导体包括非晶硅。

公开(公告)号：US08252639B2

公开(公告)日：2012-08-28

申请号：US12951981

申请日：2010-11-22

申请人： Je-Hun Lee ,  Beom-Seok Cho ,  Chang-Oh Jeong ,  Joo-Han Kim

发明人： Je-Hun Lee ,  Beom-Seok Cho ,  Chang-Oh Jeong ,  Joo-Han Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L29/12 ,  H01L29/458

摘要： The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.

摘要翻译： 本发明提供一种薄膜晶体管阵列板，包括：绝缘基板; 形成在所述绝缘基板上并具有栅电极的栅极线; 栅极绝缘层，形成在栅极线上; 形成在所述栅极绝缘层上且与所述栅电极重叠的半导体; 在半导体上形成并含有氮的扩散阻挡层; 跨越栅极线并且具有部分地接触扩散阻挡层的源电极的数据线; 漏电极部分地接触扩散阻挡层并面对栅电极上的源电极; 以及电连接到漏电极的像素电极。

公开(公告)号：US20120208330A1

公开(公告)日：2012-08-16

申请号：US13450643

申请日：2012-04-19

申请人： Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

发明人： Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

IPC分类号： H01L21/336

CPC分类号： H01L27/1214 ,  H01L27/1288 ,  H01L29/4908

摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

摘要翻译： 制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

公开(公告)号：US20120091461A1

公开(公告)日：2012-04-19

申请号：US13219379

申请日：2011-08-26

申请人： Joo-Han KIM ,  Wan-Soon Im ,  Jae-Hak Lee ,  Se-Myung Kwon ,  So-Young Koo

发明人： Joo-Han KIM ,  Wan-Soon Im ,  Jae-Hak Lee ,  Se-Myung Kwon ,  So-Young Koo

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78618 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/66765

摘要： A thin film transistor display substrate and a method of manufacturing the same are provided. The thin film transistor substrate includes a gate electrode formed on a display substrate, an active layer formed on the gate electrode to overlap with the gate electrode and including polycrystalline silicon, a first ohmic contact layer formed on the active layer, a second ohmic contact layer formed on the first ohmic contact layer, and a source electrode and a drain electrode each formed on the second ohmic contact layer.

摘要翻译： 提供薄膜晶体管显示基板及其制造方法。 薄膜晶体管基板包括形成在显示基板上的栅电极，形成在栅电极上以与栅电极重叠并包括多晶硅的有源层，形成在有源层上的第一欧姆接触层，第二欧姆接触层 形成在第一欧姆接触层上，以及源电极和漏极，各自形成在第二欧姆接触层上。

公开(公告)号：US08008662B2

公开(公告)日：2011-08-30

申请号：US12626587

申请日：2009-11-25

申请人： Joo-Han Kim ,  Min-Seok Oh ,  Jun-Young Lee ,  Sung-Wook Kang

发明人： Joo-Han Kim ,  Min-Seok Oh ,  Jun-Young Lee ,  Sung-Wook Kang

IPC分类号： H01L29/04 ,  H01L29/00 ,  H01L31/00

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124

摘要： A display substrate having a low-resistance metallic layer and a method of manufacturing the display substrate. The gate conductors are extended in a first direction. The source conductors are extended in a second direction crossing the first direction including a lower layer of molybdenum or a molybdenum alloy, and an upper layer of aluminum or an aluminum alloy. The pixel areas are defined by the gate conductors and the source conductors. A switching element is formed in each of the pixel areas and includes a gate electrode extended from the gate conductor and a source electrode extended from the source conductor. The pixel electrode includes a transparent conductive material, and is electrically connected to a drain electrode of the switching element.

摘要翻译： 具有低电阻金属层的显示基板和制造显示基板的方法。 栅极导体沿第一方向延伸。 源极导体在与第一方向交叉的第二方向上延伸，包括下层的钼或钼合金，以及铝或铝合金的上层。 像素区域由栅极导体和源极导体限定。 开关元件形成在每个像素区域中，并且包括从栅极导体延伸的栅电极和从源极延伸的源电极。 像素电极包括透明导电材料，并且电连接到开关元件的漏电极。

公开(公告)号：US07990013B2

公开(公告)日：2011-08-02

申请号：US12321989

申请日：2009-01-28

申请人： Jung Moo Seo ,  Joo Han Kim ,  Se Hyun Rhyu ,  In Soung Jung ,  Seung Bin Lim ,  Jun Hyuk Choi ,  Young Kyoun Kim ,  Bon Gwan Gu

发明人： Jung Moo Seo ,  Joo Han Kim ,  Se Hyun Rhyu ,  In Soung Jung ,  Seung Bin Lim ,  Jun Hyuk Choi ,  Young Kyoun Kim ,  Bon Gwan Gu

IPC分类号： H02K1/06

CPC分类号： H02K3/47

摘要： A stator coil of a slotless motor is disclosed in which the stator coil is formed in such a manner that respective both distal ends of two unit coil bodies, each unit coil body arranged to face each other, are respectively coupled to form a plurality of circular coil bodies, each circular coil body having a different inner diameter, and a circular coil body having a smaller inner diameter is sequentially inserted into an inner side of a circular coil body having a larger inner diameter, whereby a horizontal width of the plurality of unit coil bodies of U, V and W phases is equal there among to cause the strength of the magnetic field of U, V and W phases to be equal, and to allow the stator to be accurately manufactured, thereby catering to a designer's intention and markedly simplifying the assembly processes.

摘要翻译： 公开了一种无槽电动机的定子线圈，其中定子线圈以这样的方式形成：两个单元线圈体的相应的两个远端，每个单元线圈体分别彼此相对配置，以形成多个圆形 线圈体，具有不同内径的每个圆形线圈体和具有较小内径的圆形线圈体依次插入到具有较大内径的圆形线圈体的内侧，由此，多个单元的水平宽度 U，V，W相的线圈体相等，使U，V，W相的磁场强度相等，能够使定子精确制造，从而符合设计者的意图，明显地 简化装配过程。