公开(公告)号：US06775310B2

公开(公告)日：2004-08-10

申请号：US10152854

申请日：2002-05-23

申请人： Hironobu Sai ,  Jun Ichihara

发明人： Hironobu Sai ,  Jun Ichihara

IPC分类号： H01S500

CPC分类号： H01S5/1835 ,  H01L33/105 ,  H01L33/46 ,  H01L33/642 ,  H01S5/02461 ,  H01S5/18338 ,  H01S5/2027 ,  H01S5/2205 ,  H01S5/2231 ,  H01S2301/173 ,  H01S2301/176

摘要： On a semiconductor substrate (1), a double hetero structure portion (6) in which an active layer (4) having smaller band gap is sandwiched between semiconductor layers (3, 5) having larger band gap than that of the active layer (4) is formed. A light reflection film (9) is formed at least a part of side walls of the double hetero structure portion (6). As a result, a semiconductor light emitting device that light which leaks from side wall of light emitting area in a chip is reduced and emission light can be outputted efficiently can be obtained.

摘要翻译： 在半导体衬底（1）上，具有较小带隙的有源层（4）夹在具有比有源层（4）的带隙大的带隙的半导体层（3,5）之间的双异质结构部分（6） ） 形成了。 光反射膜（9）形成在双异质结构部分（6）的至少一部分侧壁上。 结果，可以获得半导体发光器件，其能够减少从芯片中的发光区域的侧壁泄漏的光，并且可以有效地输出发光。

公开(公告)号：US06711198B1

公开(公告)日：2004-03-23

申请号：US09549552

申请日：2000-04-14

申请人： Jun Ichihara ,  Hisayoshi Kitajima ,  Tetsuhiro Tanabe ,  Ken Nakahara ,  Haruo Tanaka

发明人： Jun Ichihara ,  Hisayoshi Kitajima ,  Tetsuhiro Tanabe ,  Ken Nakahara ,  Haruo Tanaka

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/06216 ,  H01S5/221 ,  H01S5/2219

摘要： A light source device for a laser beam printer in which a semiconductor laser is driven with a pulse current having a minimum pulse width at the ON time on the order of milliseconds or less is provided, wherein the semiconductor laser is formed so that either the rate of change at the rise portion of the pulse current becomes ±8% or less or the semiconductor laser is excited in a multiple mode in the vicinity of the threshold value of the oscillation, and the semiconductor laser oscillates in a single mode at a current separated from the threshold value, by adjusting of at least one of the width w of a stripe groove (7a) of the current block layer, the composition of clad layers (5), the distance d between the current block layer (7) and the active layer (4), the composition of the current block layer (7) and the formation of a light absorption layer into the current block layer (7). As a consequence, in the case where the light source device for the laser beam printer is driven with a short drive pulse on the order of several hundred micro seconds, the light source device becomes such that a transient phenomenon is not generated at the time of the rise of the pulse and a stable light output can be obtained.

摘要翻译： 提供了一种激光束打印机的光源装置，其中半导体激光器以在几毫秒或更小的导通时间具有最小脉冲宽度的脉冲电流驱动，其中半导体激光器形成为使得速率 在脉冲电流的上升部分的变化量为±8％以下，或者半导体激光器在振荡阈值附近的多模式下被激发，半导体激光器以单一模式以分流的方式振荡 从阈值，通过调整当前阻挡层的条纹槽（7a）的宽度w，包层（5）的组成中的至少一个，当前阻挡层（7）和 有源层（4），当前阻挡层（7）的组成和在当前阻挡层（7）中形成光吸收层。 结果，在激光束打印机的光源装置以数百微秒的短驱动脉冲驱动的情况下，光源装置变为使得在不能产生瞬时现象的情况下 可以获得脉冲的上升和稳定的光输出。

公开(公告)号：US5814532A

公开(公告)日：1998-09-29

申请号：US848677

申请日：1997-04-29

申请人： Jun Ichihara

发明人： Jun Ichihara

IPC分类号： H01L21/301 ,  H01S5/00 ,  H01S5/02 ,  H01L21/00

CPC分类号： H01S5/0201 ,  H01S5/0202

摘要： Disclosed is a method of manufacturing a semiconductor laser. A wafer having a substrate having a semiconductor layer including a light-emitting forming portion epitaxially grown on a surface of the substrate is broken into laser chips having a light-emitting surface at an end face thereof. When breaking the wafer into the chips, the breaking at the light-emitting surface is carried out by first forming street grooves in the substrate and thereafter cleaving the light-emitting layer forming portion. By doing so, there is no necessity of thinning the substrate to a required extent, facilitating handling during the manufacture process. A roughened surface of the street groove is provided in the substrate underlying the light-emitting layer forming portion, which is convenient for irregular reflection of a return light beam often encountered in an optical disc pickup device.

摘要翻译： 公开了半导体激光器的制造方法。 具有包含在基板表面外延生长的发光形成部的半导体层的基板的晶片被破碎成在其端面具有发光面的激光芯片。 当将晶片破碎成芯片时，通过首先在衬底中形成街道沟槽，然后分解发光层形成部分，来实现在发光表面处的断裂。 通过这样做，不需要将基板变薄到所需的程度，便于在制造过程中的处理。 在发光层形成部分下方的基板中设置有一个粗糙表面，这样便于在光盘拾取装置中经常遇到的返回光束的不规则反射。

公开(公告)号：US06856635B2

公开(公告)日：2005-02-15

申请号：US10274950

申请日：2002-10-22

申请人： Hironobu Sai ,  Jun Ichihara

发明人： Hironobu Sai ,  Jun Ichihara

IPC分类号： G11B7/125 ,  H01S5/022 ,  H01S5/042 ,  H01S5/183 ,  H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/0683

摘要： A lower multilayer reflection film (2), a light emitting layer forming portion (6) and an upper multilayer reflection film (8) are sequentially formed on a substrate (1) to form a semiconductor laminated portion (9), and a current injection region A is formed at a part of the semiconductor laminated portion so as to emit light from the surface in the center thereof. And, according to the present invention, the current injection region A is formed so as to be deflected from a center of the substrate. As a result, there is provided a surface light emitting type semiconductor laser capable of monitoring a light emitting power correctly and controlling it automatically in order to achieve the constant light emitting power in a case where the surface light emitting type laser chip is used as a light source for a pickup or the like.

摘要翻译： 在基板（1）上依次形成下层多层反射膜（2），发光层形成部（6）和上层多层反射膜（8），形成半导体层叠部（9），电流注入 区域A形成在半导体层叠部分的一部分处以从其中心的表面发射光。 并且，根据本发明，电流注入区域A形成为从衬底的中心偏转。 结果，提供了一种表面发光型半导体激光器，其能够正确地监视发光功率并自动地进行控制，以便在使用表面发光型激光芯片作为其的情况下实现恒定的发光功率 用于拾取器的光源等。

公开(公告)号：US6083841A

公开(公告)日：2000-07-04

申请号：US79261

申请日：1998-05-15

申请人： Hirohisa Yano ,  Jun Ichihara

发明人： Hirohisa Yano ,  Jun Ichihara

IPC分类号： H01L21/306 ,  H01L21/302

CPC分类号： H01L21/30612

摘要： A GaN-based compound semiconductor layer is formed on a substrate. An etch mask of a Ti film is formed on a surface of said gallium-nitride based compound semiconductor. The gallium-nitride based compound semiconductor is selectively etched through an opening of said etch mask. With this method, even where the semiconductor is difficult to etch, it is possible to efficiently etch the semiconductor vertically relative to a surface thereof by once forming a mask without troubles such as stripping-off of a mask. If the etch mask uses a metal film easy to oxidize to perform etching on the semiconductor layer while supplying an oxidizing source, the selective etch ratio can be further increased, enabling etching by a thin etch film.

摘要翻译： 在基板上形成GaN类化合物半导体层。 在所述氮化镓基化合物半导体的表面上形成Ti膜的蚀刻掩模。 通过所述蚀刻掩模的开口选择性地蚀刻氮化镓基化合物半导体。 利用这种方法，即使在半导体难以蚀刻的情况下，也可以通过一旦形成掩模而无需像剥离掩模那样的问题，相对于其表面来有效地蚀刻半导体。 如果蚀刻掩模使用容易氧化的金属膜在提供氧化源的同时在半导体层上进行蚀刻，则可以进一步提高选择性蚀刻比，使得能够通过薄的蚀刻膜蚀刻。

公开(公告)号：US10663701B2

公开(公告)日：2020-05-26

申请号：US16026866

申请日：2018-07-03

申请人： Jun Ichihara

发明人： Jun Ichihara

IPC分类号： G02B13/18 ,  G02B21/02 ,  G02B25/00 ,  G02B3/00 ,  G02B3/02 ,  G02B13/00

摘要： To provide an aspheric cemented lens which is easy to design and manufacture and has less aberration by using an inexpensive material such as a resin material. The aspheric cemented lens has at least three interfaces, when three interfaces are defined as a third interface, a second interface and a first interface in order from a light exit surface, chromatic aberration is corrected at the first interface and the second interface. The third interface is a hyperboloid or a surface close to a hyperboloid. When light is incident on the first interface parallel to the optical axis, the exit light from the third interface is converged to almost a single point. In order to correct chromatic aberration, the first interface and the second interface are curved surfaces.

公开(公告)号：US20090103583A1

公开(公告)日：2009-04-23

申请号：US12230377

申请日：2008-08-28

申请人： Yoshinori Tanaka ,  Jun Ichihara

发明人： Yoshinori Tanaka ,  Jun Ichihara

IPC分类号： H01S5/18 ,  H01L21/02

CPC分类号： H01S5/183 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/2214 ,  H01S5/34333 ,  H01S5/423

摘要： On an n-type GaN buffer layer serving as a common semiconductor layer, mesa regions are formed. The mesa region is formed of a semiconductor stack formed of an n-type GaN layer, an active layer and a p-type GaN layer. A current blocking region is not formed in the mesa region, and the mesa diameter of the mesa region is formed to be not more than 15 μm. The mesa region is formed by selective growth. The mesa region without a surface damage allows sufficient constriction of current and an induced radiation of laser with low current.

摘要翻译： 在用作公共半导体层的n型GaN缓冲层上形成台面区域。 台面区由由n型GaN层，有源层和p型GaN层形成的半导体堆叠形成。 在台面区域中不形成电流阻挡区域，并且台面区域的台面直径形成为不大于15μm。 通过选择性生长形成台面区域。 没有表面损伤的台面区域允许足够的电流和具有低电流的激光的感应辐射的收缩。

公开(公告)号：US06247851B1

公开(公告)日：2001-06-19

申请号：US09433472

申请日：1999-11-04

申请人： Jun Ichihara

发明人： Jun Ichihara

IPC分类号： G02B638

CPC分类号： G02B6/4292 ,  G02B6/3825 ,  G02B6/3893 ,  G02B6/421

摘要： An optical connector includes an elongate housing. A partition wall is formed integral with and within the housing. The partition wall is formed with a sleeve holder and an elongate hole. When an engagement member is inserted into the housing, its leg is inserted through the elongate hole. An optical module is accommodated in a case by a spring member, and the case is in turn inserted in the housing. A split sleeve of the optical module is inserted in the sleeve holder, and the engaging member is held by the partition wall and the case. When an optical fiber connector plug is inserted in the housing, a ferrule is inserted into the sleeve and coupled to a rod lens of the optical module.

摘要翻译： 光学连接器包括细长壳体。 分隔壁与壳体内部和内部形成一体。 分隔壁形成有套筒保持器和细长孔。 当接合构件插入到壳体中时，其腿部通过细长孔插入。 光学模块通过弹簧构件容纳在壳体中，并且壳体又插入壳体中。 光学模块的开口套筒插入套筒保持器中，并且接合构件由分隔壁和壳体保持。 当光纤连接器插头插入壳体中时，将套圈插入套管中并与光学模块的棒状透镜耦合。

公开(公告)号：US20190137740A1

公开(公告)日：2019-05-09

申请号：US16026866

申请日：2018-07-03

申请人： Jun ICHIHARA

发明人： Jun ICHIHARA

IPC分类号： G02B13/18 ,  G02B13/00 ,  G02B21/02 ,  G02B25/00

摘要： To provide an aspheric cemented lens which is easy to design and manufacture and has less aberration by using an inexpensive material such as a resin material. The aspheric cemented lens has at least three interfaces, when three interfaces are defined as a third interface, a second interface and a first interface in order from a light exit surface, chromatic aberration is corrected at the first interface and the second interface. The third interface is a hyperboloid or a surface close to a hyperboloid. When light is incident on the first interface parallel to the optical axis, the exit light from the third interface is converged to almost a single point. In order to correct chromatic aberration, the first interface and the second interface are curved surfaces.

公开(公告)号：US07376312B2

公开(公告)日：2008-05-20

申请号：US10700457

申请日：2003-11-05

申请人： Shuichi Nawae ,  Jun Ichihara

发明人： Shuichi Nawae ,  Jun Ichihara

IPC分类号： G02B6/30

CPC分类号： G02B6/4239 ,  G02B6/4238

摘要： An optical element and an optical transmission member are fixedly secured onto a substrate so as to be coupled to each other. In this substrate, a through hole is formed between an optical element secured portion and an optical transmission member secured portion. In an attempt to assemble these optical transmission member and optical element so as to make the coupling at an optimal position, first, the position of the optical transmission member is adjusted to an optimal position, and after measuring the position by a laser micrometer, the optical transmission member is fixedly secured thereto by using a soldering material. Thus, measurements are again carried out by the laser micrometer to detect an amount of deviation from the measured value before the securing process, and the secured portion is again fused so that the optical transmission member is shifted based on the amount of deviation, and again fixedly secured thereon.

摘要翻译： 将光学元件和光学传输构件固定地固定到基板上以便彼此耦合。 在该基板中，在光学元件固定部和光传输元件固定部之间形成通孔。 为了组装这些光传输部件和光学元件以使耦合处于最佳位置，首先将光传输部件的位置调节到最佳位置，并且在用激光测微计测量位置之后， 光传输构件通过使用焊接材料固定地固定到其上。 因此，通过激光测微计再次进行测量，以检测在固定过程之前与测量值的偏差量，并且再次熔化固定部分，使得光传输部件基于偏差量而偏移，并且再次 固定在其上。