External storage device and data storing method for the external storage device
    1.
    发明授权
    External storage device and data storing method for the external storage device 有权
    外部存储设备和外部存储设备的数据存储方法

    公开(公告)号:US09146686B2

    公开(公告)日:2015-09-29

    申请号:US14103862

    申请日:2013-12-12

    Applicant: Shang-Jyh Lin

    Inventor: Shang-Jyh Lin

    Abstract: The present invention has the differences in that the external storage device has at least a hard disk drive and at least a nonvolatile memory logically integrated into a storage media through a low level of a system associated with the external storage device, measures the environmental temperature and measures continuously and records if a vibration is generated according to a time period, and selectively stores the data into the hard disk drive or the nonvolatile memory. By means of the above technique, the present invention may provide the efficacy of exemption of effects from unceasing vibrations and unstable operational temperature of the hard disk drive under a mobile environment.

    Abstract translation: 本发明的区别在于,外部存储装置至少具有通过与外部存储装置相关联的系统的低级逻辑集成到存储介质中的硬盘驱动器和非易失性存储器,测量环境温度和 连续测量并记录是否根据时间段产生振动,并选择性地将数据存储到硬盘驱动器或非易失性存储器中。 通过上述技术,本发明可以提供在移动环境下免除硬盘驱动器的不稳定振动和不稳定操作温度的影响的功效。

    SEMICONDUCTOR MEMORY ARRAY STRUCTURE
    2.
    发明申请
    SEMICONDUCTOR MEMORY ARRAY STRUCTURE 审中-公开
    半导体存储器阵列结构

    公开(公告)号:US20140070359A1

    公开(公告)日:2014-03-13

    申请号:US13615526

    申请日:2012-09-13

    CPC classification number: H01L21/3081 H01L21/76224

    Abstract: A memory array includes a rhomboid-shaped AA region surrounded by a first and second STI structures. The first STI structure extends along a first direction on the longer sides of the rhomboid-shaped AA region and has a depth d1. The second STI structure extends along the second direction on the shorter sides of the rhomboid-shaped AA region and has two depths: d2 and d3, wherein d1 and d2 are shallower than d3.

    Abstract translation: 存储器阵列包括由第一和第二STI结构围绕的菱形形状的AA区域。 第一STI结构在菱形AA区域的长边上沿着第一方向延伸并且具有深度d1。 第二STI结构沿着菱形AA区域的较短边沿第二方向延伸,并且具有两个深度:d2和d3,其中d1和d2比d3浅。

    MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY STRUCTURE
    3.
    发明申请
    MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY STRUCTURE 审中-公开
    存储器件和制造存储器结构的方法

    公开(公告)号:US20140036565A1

    公开(公告)日:2014-02-06

    申请号:US13565289

    申请日:2012-08-02

    CPC classification number: H01L27/1052 H01L21/3086 H01L21/3088 H01L27/10891

    Abstract: An exemplary memory device includes a substrate and two word lines extending on the substrate. The substrate includes an active area. The two word lines are formed on the active area. Each word line includes a recessed portion corresponding to the active area. The recessed portion is defined by a planar top surface.

    Abstract translation: 示例性存储器件包括衬底和在衬底上延伸的两个字线。 基板包括有源区。 两个字线形成在有源区上。 每个字线包括对应于有效区域的凹部。 凹部由平坦的顶面限定。

    Method of Fabricating Indium-111 Radioactive Isotope
    5.
    发明申请
    Method of Fabricating Indium-111 Radioactive Isotope 有权
    制备铟-111放射性同位素的方法

    公开(公告)号:US20130104697A1

    公开(公告)日:2013-05-02

    申请号:US13352550

    申请日:2012-01-18

    CPC classification number: C22B58/00 G21G1/001 G21G2001/0057

    Abstract: The present invention provides a method for fabricating an indium(In)-111 radioactive isotope. A target of cadmium(Cd)-112 is processed through steps of dissolving with heat, absorbing, washing, desorbing and drying for obtaining the In-111 radioactive isotope. Thus, chemical separation is coordinated with the target for fabricating the In-111 radioactive isotope with high efficiency and low cost for production procedure.

    Abstract translation: 本发明提供一种制造铟(In)-111放射性同位素的方法。 通过加热,吸收,洗涤,解吸和干燥的步骤来处理镉(Cd)-112的靶子,以获得In-111放射性同位素。 因此,化学分离与用于制造In-111放射性同位素的靶相配合,生产过程效率高,成本低。

    Semiconductor device with through substrate via
    6.
    发明授权
    Semiconductor device with through substrate via 有权
    半导体器件通过基板通孔

    公开(公告)号:US08148824B2

    公开(公告)日:2012-04-03

    申请号:US12761413

    申请日:2010-04-16

    Applicant: Shian-Jyh Lin

    Inventor: Shian-Jyh Lin

    Abstract: A through substrate via having a low stress is provided. The through substrate via is positioned in a substrate. The through substrate via includes: an outer tube penetrating the substrate; at least one inner tube disposed within the outer tube; a dielectric layer lining on a side wall of the outer tube, and a side wall of the inner tube; a strength-enhanced material filling the inner tube; and a conductive layer filling the outer tube.

    Abstract translation: 提供了具有低应力的贯通基板通孔。 贯通基板通孔位于基板中。 贯通基板通孔包括:穿过基板的外管; 设置在所述外管内的至少一个内管; 在外管的侧壁上衬有的电介质层和内管的侧壁; 填充内管的强度增强材料; 以及填充外管的导电层。

    RADIOLABELING METHOD USING MULTIVALENT GLYCOLIGANDS AS HEPATIC RECEPTOR IMAGING AGENT
    8.
    发明申请
    RADIOLABELING METHOD USING MULTIVALENT GLYCOLIGANDS AS HEPATIC RECEPTOR IMAGING AGENT 审中-公开
    使用多种甘氨酸作为胃肠吸收成像剂的放射性标记方法

    公开(公告)号:US20110097264A1

    公开(公告)日:2011-04-28

    申请号:US12779328

    申请日:2010-05-13

    CPC classification number: A61K51/0491 A61K51/0497 C07F13/005 C07K1/13

    Abstract: A radiolabeling method using a multivalent glycoligand as hepatic receptor imaging agent is provided. The multivalent glycoligand-DTPA derivatives (In-111-DTPA-hexa lactoside and In-111-DTPA-tri-galactosamine glycoside) labeled with In-111 are used as hepatic receptor imaging agent. The effects of imaging of a hepatic receptor in different species are evaluated, the lowest specific radioactivity values of hepatic receptor imaging required in different species are discovered. Since the specificity of the human ASGPR closely resembles that of the mouse. This kind of radiolabelling method, agent and related study about specific radioactivity could be used in clinical trial in the future.

    Abstract translation: 提供了一种使用多价糖配位体作为肝脏受体成像剂的放射性标记方法。 用In-111标记的多价甘油配体-DTPA衍生物(In-111-DTPA-hexa lactoside和In-111-DTPA-tri-galactosamine glycoside)用作肝脏受体显像剂。 对不同物种肝受体成像的影响进行了评估,发现了不同物种所需肝脏受体成像的最低比放射性值。 由于人类ASGPR的特异性与小鼠的特异性非常相似。 这种放射性标记方法,药剂和相关研究有关的放射性可以在今后的临床试验中使用。

    NOVEL LIVER-TARGETING AGENTS AND THEIR SYNTHESIS
    9.
    发明申请
    NOVEL LIVER-TARGETING AGENTS AND THEIR SYNTHESIS 有权
    新型肝脏靶向药物及其合成

    公开(公告)号:US20110077386A1

    公开(公告)日:2011-03-31

    申请号:US12891004

    申请日:2010-09-27

    CPC classification number: C07H15/04

    Abstract: This invention provides novel liver targeting agents and their synthetic methods. A liver targeting agent, with a lysine based nitrilo triacetic acid structure as backbone which acquires multivalency with saccharide groups, to bind with a galactosamine chain or lactose chain is disclosed. In particular, only one amino acid L-lysine is involved to provide trivalency. All carboxyl groups in Nε-benzyloxycarbonyl-Nα-dicarboxymethyl-L-lysine can be conjugated with three glycosides of ahGalNAc or ahLac in one step. This invention also provides a hexa-lactoside. In particular, the TFA-AHA-Asp was used to conjugate 2 moles of NTA(ahLac)3. This invention also provides a method for adding a spacer between NTA and DTPA. The extended hepatocyte-specific glyco-ligand has higher 111In-radiolabelling yield than those non-extended.

    Abstract translation: 本发明提供新型肝靶向剂及其合成方法。 公开了以赖氨酸为基础的三乙酸结构作为骨架的肝靶向剂,其以糖基取代多价,与半乳糖胺链或乳糖链结合。 特别地,仅涉及一个氨基酸L-赖氨酸以提供三价值。 N,N-苄氧羰基-Nα-二羧甲基-L-赖氨酸中的所有羧基可以在一个步骤中与αGalNAc或ahLac的三种糖苷缀合。 本发明还提供了六乳糖苷。 特别地,TFA-AHA-Asp用于缀合2摩尔NTA(ahLac)3。 本发明还提供了一种在NTA和DTPA之间添加间隔物的方法。 延长的肝细胞特异性糖配体比未延长的肝细胞特异性糖配体具有更高的111In-放射性标记产率。

    INTEGRATED CIRCUIT STRUCTURE AND MEMORY ARRAY
    10.
    发明申请
    INTEGRATED CIRCUIT STRUCTURE AND MEMORY ARRAY 审中-公开
    集成电路结构和存储阵列

    公开(公告)号:US20110042722A1

    公开(公告)日:2011-02-24

    申请号:US12545739

    申请日:2009-08-21

    Abstract: An integrated circuit structure includes a plurality of first doped regions disposed in a substrate in a matrix having odd columns and even columns each immediately adjacent to a corresponding one of the odd columns, a plurality of buried bit lines disposed in the substrate to electrically connect to the plurality of first doped regions of the same odd column in the matrix, and a plurality of surface bit lines disposed above an uppermost surface of the substrate, wherein each of the surface bit lines electrically connects to the first doped regions of the same even column in the matrix.

    Abstract translation: 集成电路结构包括多个第一掺杂区域,其布置在具有奇数列和偶数列的矩阵中的基板中,每个奇数列和偶数列紧邻相应的一个奇数列,多个埋入位线设置在基板中以电连接到 矩阵中相同奇数列的多个第一掺杂区域和设置在基板的最上表面上方的多个表面位线,其中每个表面位线电连接到相同偶数列的第一掺杂区域 在矩阵中。

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