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    Magnetic transfer master disk and method for manufacturing the same
    1.
    发明授权
    Magnetic transfer master disk and method for manufacturing the same 失效
    磁性传输母盘及其制造方法

    公开(公告)号：US07972490B2

    公开(公告)日：2011-07-05

    申请号：US12274444

    申请日：2008-11-20

    申请人： Takeo Kido ,  Katsuhiro Nishimaki

    发明人： Takeo Kido ,  Katsuhiro Nishimaki

    IPC分类号： C25D1/10

    CPC分类号： G11B5/82 ,  B82Y10/00 ,  C23C28/023 ,  C25D1/10 ,  C25D1/20 ,  C25D5/02 ,  G11B5/743 ,  G11B5/855 ,  G11B5/865

    摘要： A magnetic transfer master disk including a magnetic layer and exhibiting excellent shape stability of a protrusion/recess pattern is provided. An initial layer formed of a conductive film is formed on a surface of a master on which a pattern of minute protrusions/recesses is formed, and then a magnetic layer (principal layer) is formed on the initial layer, and then, a metal layer is formed by electroforming. A duplicate in which the initial layer, the magnetic layer and the metal layer have been integrated is peeled off from the master, thereby obtaining a magnetic transfer master disk, which is a duplicate in which the magnetic layer and the initial layer are deposited on the protruded/recessed surface of the metal layer.

    摘要翻译： 提供了包括磁性层并且具有优异的突出/凹陷图案形状稳定性的磁转移母盘。 在形成有微细突起/凹部的图案的母版的表面上形成由导电膜形成的初始层，然后在初始层上形成磁性层（主层），然后，在金属层 由电铸形成。 将初始层，磁性层和金属层整合在一起的副本从母版剥离，从而获得磁性传输母盘，其中磁性层和初始层沉积在其上 金属层的突出/凹陷表面。

    MAGNETIC TRANSFER MASTER DISK AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    MAGNETIC TRANSFER MASTER DISK AND METHOD FOR MANUFACTURING THE SAME 失效
    磁性传输主磁盘及其制造方法

    公开(公告)号：US20090141382A1

    公开(公告)日：2009-06-04

    申请号：US12274444

    申请日：2008-11-20

    申请人： Takeo KIDO ,  Katsuhiro Nishimaki

    发明人： Takeo KIDO ,  Katsuhiro Nishimaki

    IPC分类号： G11B5/86 ,  C25D1/00

    CPC分类号： G11B5/82 ,  B82Y10/00 ,  C23C28/023 ,  C25D1/10 ,  C25D1/20 ,  C25D5/02 ,  G11B5/743 ,  G11B5/855 ,  G11B5/865

    摘要： A magnetic transfer master disk including a magnetic layer and exhibiting excellent shape stability of a protrusion/recess pattern is provided. An initial layer formed of a conductive film is formed on a surface of a master on which a pattern of minute protrusions/recesses is formed, and then a magnetic layer (principal layer) is formed on the initial layer, and then, a metal layer is formed by means of electroforming. A duplicate in which the initial layer, the magnetic layer and the metal layer have been integrated is peeled off from the master, thereby obtaining a magnetic transfer master disk, which is a duplicate in which the magnetic layer and the initial layer are deposited on the protruded/recessed surface of the metal layer.

    摘要翻译： 提供了包括磁性层并且具有优异的突出/凹陷图案形状稳定性的磁转移母盘。 在形成有微细突起/凹部的图案的母版的表面上形成由导电膜形成的初始层，然后在初始层上形成磁性层（主层），然后，在金属层 通过电铸形成。 将初始层，磁性层和金属层整合在一起的副本从母版剥离，从而获得磁性传输母盘，其中磁性层和初始层沉积在其上 金属层的突出/凹陷表面。

    Etch amount detection method, etching method, and etching system
    4.
    发明申请
    Etch amount detection method, etching method, and etching system 审中-公开
    蚀刻量检测方法，蚀刻方法和蚀刻系统

    公开(公告)号：US20090095421A1

    公开(公告)日：2009-04-16

    申请号：US12314083

    申请日：2008-12-03

    申请人： Syuji Nozawa ,  Katsuhiro Nishimaki

    发明人： Syuji Nozawa ,  Katsuhiro Nishimaki

    IPC分类号： C23F1/08

    CPC分类号： H01J37/32935 ,  G01B11/0675 ,  H01J37/32972 ,  H01L21/32137

    摘要： This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and a reflected light La2 are obtained. The reflected lights La1 and La2 interfere with each other, thereby generating an interference light Lai. A light Lb is reflected by an interface between the photoresist mask layer 316 and a polysilicon film 304, and the upper surface of the photoresist mask layer 316. Thereby a reflected light Lb1 and a reflected light Lb2 are obtained. The reflected lights Lb1 and Lb2 interfere with each other, thereby generating an interference light Lbi. Using the interference lights Lai and Lbi, an etch amount of the polysilicon film 304 is calculated.

    摘要翻译： 本发明可以精确地检测蚀刻目标层的蚀刻量，而与掩模层的类型无关。 光La被光致抗蚀剂掩模层316的上表面和孔H的底部反射。从而获得反射光La1和反射光La2。 反射光La1和La2彼此干涉，从而产生干涉光Lai。 光Lb被光致抗蚀剂掩模层316和多晶硅膜304之间的界面以及光致抗蚀剂掩模层316的上表面反射。从而获得反射光Lb1和反射光Lb2。 反射光Lb1和Lb2彼此干涉，从而产生干涉光Lbi。 使用干涉光Lai和Lbi，计算多晶硅膜304的蚀刻量。

    Etch amount detection method, etching method, and etching system
    5.
    发明申请
    Etch amount detection method, etching method, and etching system 有权
    蚀刻量检测方法，蚀刻方法和蚀刻系统

    公开(公告)号：US20050029228A1

    公开(公告)日：2005-02-10

    申请号：US10860012

    申请日：2004-06-04

    申请人： Syuji Nozawa ,  Katsuhiro Nishimaki

    发明人： Syuji Nozawa ,  Katsuhiro Nishimaki

    IPC分类号： H01L21/3065 ,  C23F1/00 ,  G01B11/06 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/66

    CPC分类号： H01J37/32935 ,  G01B11/0675 ,  H01J37/32972 ,  H01L21/32137

    摘要： This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and a reflected light La2 are obtained. The reflected lights La1 and La2 interfere with each other, thereby generating an interference light Lai. A light Lb is reflected by an interface between the photoresist mask layer 316 and a polysilicon film 304, and the upper surface of the photoresist mask layer 316. Thereby a reflected light Lb1 and a reflected light Lb2 are obtained. The reflected lights Lb1 and Lb2 interfere with each other, thereby generating an interference light Lb1. Using the interference lights Lai and Lbi, an etch amount of the polysilicon film 304 is calculated.

    摘要翻译： 本发明可以精确地检测蚀刻目标层的蚀刻量，而与掩模层的类型无关。 光La被光致抗蚀剂掩模层316的上表面和孔H的底部反射。从而获得反射光La1和反射光La2。 反射光La1和La2彼此干涉，从而产生干涉光Lai。 光Lb被光致抗蚀剂掩模层316和多晶硅膜304之间的界面以及光致抗蚀剂掩模层316的上表面反射。从而获得反射光Lb1和反射光Lb2。 反射光Lb1和Lb2彼此干涉，从而产生干涉光Lb1。 使用干涉光Lai和Lbi，计算多晶硅膜304的蚀刻量。

    Etch amount detection method, etching method, and etching system
    7.
    发明授权
    Etch amount detection method, etching method, and etching system 有权
    蚀刻量检测方法，蚀刻方法和蚀刻系统

    公开(公告)号：US07481944B2

    公开(公告)日：2009-01-27

    申请号：US10860012

    申请日：2004-06-04

    申请人： Syuji Nozawa ,  Katsuhiro Nishimaki

    发明人： Syuji Nozawa ,  Katsuhiro Nishimaki

    IPC分类号： G01L21/30 ,  G01B9/02

    CPC分类号： H01J37/32935 ,  G01B11/0675 ,  H01J37/32972 ,  H01L21/32137

    摘要： This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and a reflected light La2 are obtained. The reflected lights La1 and La2 interfere with each other, thereby generating an interference light Lai. A light Lb is reflected by an interface between the photoresist mask layer 316 and a polysilicon film 304, and the upper surface of the photoresist mask layer 316. Thereby a reflected light Lb1 and a reflected light Lb2 are obtained. The reflected lights Lb1 and Lb2 interfere with each other, thereby generating an interference light Lb1. Using the interference lights Lai and Lbi, an etch amount of the polysilicon film 304 is calculated.

    摘要翻译： 本发明可以精确地检测蚀刻目标层的蚀刻量，而与掩模层的类型无关。 光La被光致抗蚀剂掩模层316的上表面和孔H的底部反射。从而获得反射光La1和反射光La2。 反射光La1和La2彼此干涉，从而产生干涉光Lai。 光Lb被光致抗蚀剂掩模层316和多晶硅膜304之间的界面以及光致抗蚀剂掩模层316的上表面反射。从而获得反射光Lb1和反射光Lb2。 反射光Lb1和Lb2彼此干涉，从而产生干涉光Lb1。 使用干涉光Lai和Lbi，计算多晶硅膜304的蚀刻量。