公开(公告)号：US06939408B1

公开(公告)日：2005-09-06

申请号：US09650103

申请日：2000-08-29

申请人： Francis A. Abramovich ,  Nicole S. Carpenter ,  Joseph R. Drennan ,  Rick H. Gaylord ,  Casey J. Grant ,  Kenneth F. McAvey, Jr. ,  Mark A. Pakulski ,  Joel M. Sharrow ,  William A. Syverson ,  Alison K. Easton ,  Kenneth H. Yao

发明人： Francis A. Abramovich ,  Nicole S. Carpenter ,  Joseph R. Drennan ,  Rick H. Gaylord ,  Casey J. Grant ,  Kenneth F. McAvey, Jr. ,  Mark A. Pakulski ,  Joel M. Sharrow ,  William A. Syverson ,  Alison K. Easton ,  Kenneth H. Yao

IPC分类号： B08B3/00 ,  B08B3/08 ,  H01L21/00 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B08B3/08 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/67086 ,  Y10S134/902

摘要： A method for preparing a workpiece surface utilizing two more fluids of differing density and miscibility which create one or more fluid interfaces wherein the fluids are chosen such that the solubility or affinity of one of the fluids is high for a material to be removed from the workpiece surface while the other fluid has a low solubility or affinity for the material to be removed. The workpiece surface is treated by passing the workpiece through the fluid interface. The two or more fluids are preferably dispensed into an apparatus and allowed to settle into two or more predominant layers separated by an interface. Surface preparation techniques which may benefit from the present invention include etching, cleaning or drying processes and the like.

摘要翻译： 一种用于制备工件表面的方法，其使用两种不同密度和混溶性的流体，其产生一个或多个流体界面，其中选择流体使得流体之一的溶解度或亲和力对于从工件中去除的材料是高的 而另一种流体对待除去的材料具有低溶解度或亲和性。 通过使工件通过流体界面来处理工件表面。 两种或更多种流体优选地分配到装置中并允许沉降到由界面分开的两个或更多个主要层中。 可受益于本发明的表面处理技术包括蚀刻，清洗或干燥过程等。

公开(公告)号：US06776171B2

公开(公告)日：2004-08-17

申请号：US09892954

申请日：2001-06-27

申请人： Nicole S. Carpenter ,  Joseph R. Drennan ,  Alison K. Easton ,  Casey J. Grant ,  Andrew S. Hoadley ,  Kenneth F. McAvey, Jr. ,  Joel M. Sharrow ,  William A. Syverson ,  Kenneth H. Yao

发明人： Nicole S. Carpenter ,  Joseph R. Drennan ,  Alison K. Easton ,  Casey J. Grant ,  Andrew S. Hoadley ,  Kenneth F. McAvey, Jr. ,  Joel M. Sharrow ,  William A. Syverson ,  Kenneth H. Yao

IPC分类号： B08B700

CPC分类号： B08B7/0014

摘要： An apparatus and method are provided for removing contaminate particulate matter from substrate surfaces such as semiconductor wafers. The method and apparatus use a material, preferably a liquid curable polymer, which is applied as a sacrificial coating to the surface of a substrate containing contaminate particulate matter thereon. An energy source is used to dislodge the contaminate particulate matter from the surface of the wafer into the sacrificial coating so that the particles are partially or fully encapsulated and suspended in the sacrificial coating. The sacrificial coating is then removed. The coating is preferably formed into a film to facilitate removal of the coating by pulling (stripping) the film providing a cleaner substrate surface.

公开(公告)号：US07531059B2

公开(公告)日：2009-05-12

申请号：US10798816

申请日：2004-03-10

申请人： Nicole S Carpenter ,  Joseph R Drennan ,  Alison K Easton ,  Casey J Grant ,  Andrew S Hoadley ,  Kenneth F McAvey, Jr. ,  Joel M Sharrow ,  William A Syverson ,  Kenneth H Yao

发明人： Nicole S Carpenter ,  Joseph R Drennan ,  Alison K Easton ,  Casey J Grant ,  Andrew S Hoadley ,  Kenneth F McAvey, Jr. ,  Joel M Sharrow ,  William A Syverson ,  Kenneth H Yao

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： B08B7/0014

摘要： An apparatus and method are provided for removing contaminate particulate matter from substrate surfaces such as semiconductor wafers. The method and apparatus use a material, preferably a liquid curable polymer, which is applied as a sacrificial coating to the surface of a substrate containing contaminate particulate matter thereon. An energy source is used to dislodge the contaminate particulate matter from the surface of the wafer into the sacrificial coating so that the particles are partially or fully encapsulated and suspended in the sacrificial coating. The sacrificial coating is then removed. The coating is preferably formed into a film to facilitate removal of the coating by pulling (stripping) the film providing a cleaner substrate surface.

摘要翻译： 提供了用于从诸如半导体晶片的衬底表面去除污染颗粒物质的装置和方法。 该方法和装置使用材料，优选液体可固化聚合物，其作为牺牲涂层施加到其上含有污染颗粒物质的基材的表面上。 使用能量源将污染颗粒物质从晶片的表面移走到牺牲涂层中，使得颗粒被部分或完全包封并悬浮在牺牲涂层中。 然后去除牺牲涂层。 涂层优选形成薄膜以通过拉（剥离）提供更清洁的基底表面的薄膜来去除涂层。

公开(公告)号：US07176119B2

公开(公告)日：2007-02-13

申请号：US10711456

申请日：2004-09-20

申请人： Jeffrey P. Gambino ,  William Hill ,  Kenneth F. McAvey, Jr. ,  Thomas L. McDevitt ,  Anthony K. Stamper ,  Arthur C. Winslow ,  Robert Zwonik

发明人： Jeffrey P. Gambino ,  William Hill ,  Kenneth F. McAvey, Jr. ,  Thomas L. McDevitt ,  Anthony K. Stamper ,  Arthur C. Winslow ,  Robert Zwonik

IPC分类号： H01L21/4763

CPC分类号： H01L21/76832 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76834

摘要： An integrated circuit and a method of manufacturing the integrated circuit, the method including: (a) providing a substrate; (b) forming a copper diffusion barrier layer on the substrate; (c) forming a dielectric layer on a top surface of the copper diffusion barrier layer; (d) forming a copper damascene or dual damascene wire in the dielectric layer, a top surface of the copper damascene or dual damascene wire coplanar with a top surface of the dielectric layer; (e) forming a first capping layer on the top surface of the wire and the top surface of the dielectric layer; (f) after step (e) performing one or more characterization procedures in relation to said integrated circuit; and (g) after step (e) forming a second capping layer on a top surface of the first capping layer.

摘要翻译： 一种集成电路和集成电路的制造方法，所述方法包括：（a）提供衬底; （b）在所述基板上形成铜扩散阻挡层; （c）在铜扩散阻挡层的顶表面上形成电介质层; （d）在所述电介质层中形成铜镶嵌或双镶嵌线，所述铜镶嵌件的顶表面或与所述电介质层的顶表面共面的双镶嵌线; （e）在所述导线的顶表面和所述电介质层的顶表面上形成第一覆盖层; （f）在步骤（e）执行与所述集成电路相关的一个或多个表征程序之后; 和（g）在步骤（e）之后，在第一覆盖层的顶表面上形成第二覆盖层。