Method and apparatus for combined particle location and removal
    3.
    发明授权
    Method and apparatus for combined particle location and removal 失效
    用于组合颗粒定位和去除的方法和装置

    公开(公告)号:US06356653B2

    公开(公告)日:2002-03-12

    申请号:US09116680

    申请日:1998-07-16

    IPC分类号: G06K900

    CPC分类号: H01L22/20 H01L21/268

    摘要: A method for removing one or more particles from a surface of an object is provided. The method has first and second steps of detecting and locating the one or more particles on the surface of the object. In a third step, focused energy is directed onto one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface. In preferred variations of the method of the present invention, the object is a semiconductor wafer and the directed focused energy is in the form of a laser. Also provided is an apparatus for removing the plurality of particles from the surface of the object. The apparatus includes a detector for detecting and locating the plurality of particles on the surface of the object, and a laser for directing focused energy on one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface.

    摘要翻译: 提供了从物体表面去除一个或多个颗粒的方法。 该方法具有检测和定位物体表面上的一个或多个颗粒的第一和第二步骤。 在第三步骤中,将聚焦的能量引导到一个或多个检测到的颗粒上以破坏一个或多个颗粒与表面之间的键能,从而从表面除去一个或多个颗粒。 在本发明方法的优选变型中,目的是半导体晶片,并且定向的聚焦能是激光的形式。 还提供了用于从物体的表面去除多个颗粒的装置。 该装置包括用于检测和定位物体表面上的多个颗粒的检测器和用于将聚焦能量引导到一个或多个检测到的颗粒上的激光器,以破坏一个或多个颗粒与表面之间的结合能,由此 从表面去除一个或多个颗粒。

    Reduction of foreign particulate matter on semiconductor wafers
    5.
    发明授权
    Reduction of foreign particulate matter on semiconductor wafers 失效
    减少半导体晶圆上的杂质颗粒物

    公开(公告)号:US5294570A

    公开(公告)日:1994-03-15

    申请号:US827846

    申请日:1992-01-29

    摘要: A substantial reduction in the foreign particulate matter contamination on surfaces, such as the surfaces of semiconductor wafers, is achieved by treating the surfaces with a solution comprising a strong acid and a very small amount of a fluorine-containing compound. A preferred method employs a solution containing sulfuric acid, hydrogen peroxide and a very small amount of hydrofluoric acid, which is effective in reducing foreign particulate matter contamination, without significant etching, of the surface being treated.

    摘要翻译: 通过用包含强酸和极少量含氟化合物的溶液处理表面,可以实现诸如半导体晶片的表面的表面上的外来颗粒物质污染物的显着减少。 优选的方法是使用含有硫酸,过氧化氢和非常少量的氢氟酸的溶液,其有效地减少未处理表面的异物颗粒物污染,而不会显着蚀刻。

    Apparatus for uniform cleaning of wafers using megasonic energy

    公开(公告)号:US5579792A

    公开(公告)日:1996-12-03

    申请号:US599007

    申请日:1996-02-09

    IPC分类号: E04B1/84 H01L21/00 B08B3/10

    摘要: Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.

    Apparatus for uniform cleaning of wafers using megasonic energy
    7.
    发明授权
    Apparatus for uniform cleaning of wafers using megasonic energy 失效
    使用兆声波能量均匀清洁晶片的装置

    公开(公告)号:US5533540A

    公开(公告)日:1996-07-09

    申请号:US370714

    申请日:1995-01-10

    IPC分类号: E04B1/84 H01L21/00 B08B3/10

    摘要: Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.

    摘要翻译: 用于在兆赫兹范围内用声能量清洁/蚀刻物品的表面的装置和方法,其在循环罐内采用防反射机构。 具有至少一个侧壁和底部结构的罐保持清洁/蚀刻液体,并且兆声波换能器与用于将兆声波能量投射到液体中的罐相关联。 防反射机构设置在罐内与罐的至少一个侧壁或底部结构紧密相关联,从而最小化来自相关联表面的兆声波能量的反射。 优选地,兆声波换能器与第二坦克侧壁相对,第一坦克侧壁与第二坦克侧壁相对,并且防反射机构邻近第二坦克侧壁设置。 作为示例,防反射机构可以包括气泡流,多个消声结构或两个气泡和消声结构的组合。

    Method for uniform cleaning of wafers using megasonic energy
    9.
    发明授权
    Method for uniform cleaning of wafers using megasonic energy 失效
    使用兆声波能量均匀清洁晶片的方法

    公开(公告)号:US5427622A

    公开(公告)日:1995-06-27

    申请号:US276684

    申请日:1994-07-18

    IPC分类号: E04B1/84 H01L21/00 B08B3/12

    摘要: Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.

    摘要翻译: 用于在兆赫兹范围内用声能量清洁/蚀刻物品的表面的装置和方法,其在循环罐内采用防反射机构。 具有至少一个侧壁和底部结构的罐保持清洁/蚀刻液体,并且兆声波换能器与用于将兆声波能量投射到液体中的罐相关联。 防反射机构设置在罐内与罐的至少一个侧壁或底部结构紧密相关联,从而最小化来自相关联表面的兆声波能量的反射。 优选地,兆声波换能器与第二坦克侧壁相对,第一坦克侧壁与第二坦克侧壁相对,并且防反射机构邻近第二坦克侧壁设置。 作为示例,防反射机构可以包括气泡流,多个消声结构或两个气泡和消声结构的组合。

    Sonic cleaning with an interference signal
    10.
    发明授权
    Sonic cleaning with an interference signal 失效
    用干扰信号进行声波清洗

    公开(公告)号:US06276370B1

    公开(公告)日:2001-08-21

    申请号:US09343827

    申请日:1999-06-30

    IPC分类号: B08B302

    摘要: An array of ultrasonic or megasonic transducers is used to clean a substrate. An interference signal that is the superposition of the signals from each transducer enhances the cleaning. The system improves cleaning by providing a higher intensity beam than is available from uncoupled transducers to facilitate removal of smaller particles. In addition, the beam can be swept across the substrate to provide a uniform cleaning of the entire surface, avoiding dead spots. The system can be adapted for use in a vessel or for single wafer processing with a stream of fluid or a puddle of fluid.

    摘要翻译: 使用超声波或兆声波换能器阵列来清洁基底。 作为来自每个换能器的信号的叠加的干扰信号增强了清洁。 该系统通过提供比不连接的换能器可获得的更高强度的束来改善清洁以便于去除更小的颗粒。 此外,梁可以扫过基板,以提供对整个表面的均匀清洁,从而避免死点。 该系统可以适用于容器中或用于具有流体流或流体池的单晶片处理。