摘要:
A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.
摘要:
A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.
摘要:
A method for manufacturing a light emitting device comprises: preparing a light emitting component having an active layer of a semiconductor, the active layer comprising a gallium nitride based semiconductor containing indium and being capable of emitting a blue color light; preparing a phosphor capable of absorbing a part of the blue color light emitted from the light emitting component and emitting a yellow color light, wherein selection of the phosphor is controlled based on an emission wavelength of the light emitting component; and combining the light emitting component and the phosphor so that the blue color light from the light emitting component and the yellow color light from the phosphor are mixed to make a white color light.
摘要:
A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.
摘要:
A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.
摘要:
A device for emitting white-color light comprises: a light emitting diode including: an LED chip comprising a gallium nitride compound semiconductor containing indium and being capable of emitting a blue color light, and a phosphor capable of absorbing a part of the blue color light and emitting a light having longer wavelength than the blue color light, the blue color light and the light from the phosphor being mixed to make the white-color; a control unit for converting an input to pulse signals; and a driver receiving the pulse signals from the control unit to drive the LED chip, wherein the brightness of the white-color light from the light emitting diode is controlled by a width of the pulse signals.
摘要:
A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.
摘要:
A light emitting device includes a light emitting component; and a phosphor capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light. A straight line connecting a point of chromaticity corresponding to a peak of the spectrum generated by the light emitting component and a point of chromaticity corresponding to a peak of the spectrum generated by the phosphor is disposed along with the black body radiation locus in the chromaticity diagram.
摘要:
A semiconductor apparatus according to the present invention comprises a support member that has a recessed portion, one pair of positive and negative conductive wiring members that are provided on the support member, a semiconductor device that is electrically connected to the conductive wiring members and is disposed in the recessed portion, and a coating member that seals at least the semiconductor device. Side walls of the recessed portion has a first side wall 105 that surrounds the semiconductor device 103, and the second side wall 106 that protrudes from the first side wall. At least a first wall surface 106a in the bottom side of the recessed portion in wall surfaces of the second side wall 106 is coated with a metallic material. Consequently, a highly reliable semiconductor apparatus with improved light-outgoing efficiency is provided.
摘要:
A light emitting diode comprising an LED chip having a light emitting layer made of a nitride compound semiconductor and a light transmitting resin that includes a fluorescent material which absorbs at least a part of light emitted by the LED chip and emits light of a different wavelength, wherein the fluorescent material includes a fluorescent particles of small particle size and a fluorescent particles of large particle size, the fluorescent particles of large particle size being distributed in the vicinity of the LED chip in the light transmitting resin to form a wavelength converting layer, the fluorescent particles of small particle size being distributed on the outside of the wavelength converting layer in the light transmitting resin.