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1.发明授权Method for bonding semiconductor wafers and method for manufacturing semiconductor device 失效半导体晶片的接合方法及半导体装置的制造方法公开(公告)号：US08039305B2
公开(公告)日：2011-10-18
申请号：US12597652
申请日：2008-04-24
申请人： Kenzou Mejima , Satoru Katsurayama , Mitsuo Sugino
发明人： Kenzou Mejima , Satoru Katsurayama , Mitsuo Sugino
IPC分类号： H01L21/00
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L24/94 , H01L25/50 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/274 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81203 , H01L2224/81801 , H01L2224/83101 , H01L2224/83191 , H01L2224/83855 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01059 , H01L2924/01072 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/01083 , H01L2224/13111 , H01L2224/13109 , H01L2924/3512 , H01L2224/29099 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： In a method for bonding semiconductor wafers of the present invention, a bonding layer containing a flux-active curing agent and a thermosetting resin is interposed between a first semiconductor wafer and a second semiconductor wafer, thereby producing a semiconductor wafer stacked body in which the first and second semiconductor wafers are stacked together, and then the semiconductor wafer stacked body is compressed in a thickness direction thereof while heating it so that the first and second semiconductor wafers are fixed together by melting and solidifying solder bumps while curing the thermosetting resin, thereby producing a semiconductor wafer bonded body in which first connector portions and second connector portions are electrically connected together through solidified products obtained by melting and solidifying the solder bumps.
摘要翻译： 在本发明的半导体晶片的接合方法中，在第一半导体晶片和第二半导体晶片之间插入含有助焊剂活性固化剂和热硬化性树脂的接合层，由此制造半导体晶片叠层体， 并且将第二半导体晶片堆叠在一起，然后半导体晶片叠层体在其加热方向上在其厚度方向上被压缩，从而通过在固化热固性树脂的同时熔化固化焊料凸块来将第一和第二半导体晶片固定在一起，从而产生 半导体晶片接合体，其中第一连接器部分和第二连接器部分通过熔化和固化焊料凸块获得的固化产物电连接在一起。
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2.发明申请METHOD FOR BONDING SEMICONDUCTOR WAFERS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效用于连接半导体晶体管的方法和制造半导体器件的方法公开(公告)号：US20100129960A1
公开(公告)日：2010-05-27
申请号：US12597652
申请日：2008-04-24
申请人： Kenzou Mejima , Satoru Katsurayama , Mitsuo Sugino
发明人： Kenzou Mejima , Satoru Katsurayama , Mitsuo Sugino
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L24/94 , H01L25/50 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/274 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81203 , H01L2224/81801 , H01L2224/83101 , H01L2224/83191 , H01L2224/83855 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01059 , H01L2924/01072 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/01083 , H01L2224/13111 , H01L2224/13109 , H01L2924/3512 , H01L2224/29099 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： In a method for bonding semiconductor wafers of the present invention, a bonding layer containing a flux-active curing agent and a thermosetting resin is interposed between a first semiconductor wafer and a second semiconductor wafer, thereby producing a semiconductor wafer stacked body in which the first and second semiconductor wafers are stacked together, and then the semiconductor wafer stacked body is compressed in a thickness direction thereof while heating it so that the first and second semiconductor wafers are fixed together by melting and solidifying solder bumps while curing the thermosetting resin, thereby producing a semiconductor wafer bonded body in which first connector portions and second connector portions are electrically connected together through solidified products obtained by melting and solidifying the solder bumps.
摘要翻译： 在本发明的半导体晶片的接合方法中，在第一半导体晶片和第二半导体晶片之间插入含有助焊剂活性固化剂和热硬化性树脂的接合层，由此制造半导体晶片叠层体， 并且将第二半导体晶片堆叠在一起，然后半导体晶片叠层体在其加热方向上在其厚度方向上被压缩，从而通过在固化热固性树脂的同时熔化固化焊料凸块来将第一和第二半导体晶片固定在一起，从而产生 半导体晶片接合体，其中第一连接器部分和第二连接器部分通过熔化和固化焊料凸块获得的固化产物电连接在一起。
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