公开(公告)号：US20100129960A1

公开(公告)日：2010-05-27

申请号：US12597652

申请日：2008-04-24

申请人： Kenzou Mejima ,  Satoru Katsurayama ,  Mitsuo Sugino

发明人： Kenzou Mejima ,  Satoru Katsurayama ,  Mitsuo Sugino

IPC分类号： H01L21/98 ,  B23K31/02

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/11 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/274 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2224/13109 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： In a method for bonding semiconductor wafers of the present invention, a bonding layer containing a flux-active curing agent and a thermosetting resin is interposed between a first semiconductor wafer and a second semiconductor wafer, thereby producing a semiconductor wafer stacked body in which the first and second semiconductor wafers are stacked together, and then the semiconductor wafer stacked body is compressed in a thickness direction thereof while heating it so that the first and second semiconductor wafers are fixed together by melting and solidifying solder bumps while curing the thermosetting resin, thereby producing a semiconductor wafer bonded body in which first connector portions and second connector portions are electrically connected together through solidified products obtained by melting and solidifying the solder bumps.

摘要翻译： 在本发明的半导体晶片的接合方法中，在第一半导体晶片和第二半导体晶片之间插入含有助焊剂活性固化剂和热硬化性树脂的接合层，由此制造半导体晶片叠层体， 并且将第二半导体晶片堆叠在一起，然后半导体晶片叠层体在其加热方向上在其厚度方向上被压缩，从而通过在固化热固性树脂的同时熔化固化焊料凸块来将第一和第二半导体晶片固定在一起，从而产生 半导体晶片接合体，其中第一连接器部分和第二连接器部分通过熔化和固化焊料凸块获得的固化产物电连接在一起。

公开(公告)号：US08039305B2

公开(公告)日：2011-10-18

申请号：US12597652

申请日：2008-04-24

申请人： Kenzou Mejima ,  Satoru Katsurayama ,  Mitsuo Sugino

发明人： Kenzou Mejima ,  Satoru Katsurayama ,  Mitsuo Sugino

IPC分类号： H01L21/00

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/11 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/274 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2224/13109 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： In a method for bonding semiconductor wafers of the present invention, a bonding layer containing a flux-active curing agent and a thermosetting resin is interposed between a first semiconductor wafer and a second semiconductor wafer, thereby producing a semiconductor wafer stacked body in which the first and second semiconductor wafers are stacked together, and then the semiconductor wafer stacked body is compressed in a thickness direction thereof while heating it so that the first and second semiconductor wafers are fixed together by melting and solidifying solder bumps while curing the thermosetting resin, thereby producing a semiconductor wafer bonded body in which first connector portions and second connector portions are electrically connected together through solidified products obtained by melting and solidifying the solder bumps.

摘要翻译： 在本发明的半导体晶片的接合方法中，在第一半导体晶片和第二半导体晶片之间插入含有助焊剂活性固化剂和热硬化性树脂的接合层，由此制造半导体晶片叠层体， 并且将第二半导体晶片堆叠在一起，然后半导体晶片叠层体在其加热方向上在其厚度方向上被压缩，从而通过在固化热固性树脂的同时熔化固化焊料凸块来将第一和第二半导体晶片固定在一起，从而产生 半导体晶片接合体，其中第一连接器部分和第二连接器部分通过熔化和固化焊料凸块获得的固化产物电连接在一起。

公开(公告)号：US07829992B2

公开(公告)日：2010-11-09

申请号：US11886904

申请日：2007-04-24

申请人： Mitsuo Sugino ,  Satoru Katsurayama ,  Tomoe Yamashiro ,  Tetsuya Miyamoto ,  Hiroyuki Yamashita

发明人： Mitsuo Sugino ,  Satoru Katsurayama ,  Tomoe Yamashiro ,  Tetsuya Miyamoto ,  Hiroyuki Yamashita

IPC分类号： H01L23/02 ,  H01L23/04 ,  H01L23/053 ,  H01L23/12 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L23/16 ,  H01L23/3128 ,  H01L23/562 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device (100) comprises a first resin substrate (101) on which a first semiconductor chip (125) is mounted a surface thereof; a second resin substrate (111) on which a second semiconductor chip (131) is mounted on a surface thereof; and a resin base material (109), joined to a front surface of the first resin substrate (101) and to a back surface of the second resin substrate (111), so that these surfaces are electrically connected. The resin base material (109) is disposed in a circumference of the first resin substrate (101) in the surface of the first resin substrate (101). Further, the first semiconductor chip (125) is disposed in a space section provided among the first resin substrate (101), the second resin substrate (111) and the resin base material (109) in the surface of the first resin substrate (101).

摘要翻译： 半导体器件（100）包括第一树脂基板（101），第一半导体芯片（125）的表面安装有第一树脂基板（101） 第二树脂基板（111），其表面上安装有第二半导体芯片（131）; 以及与第一树脂基板（101）的前表面和第二树脂基板（111）的背面接合的树脂基材（109），使得这些表面电连接。 树脂基材（109）在第一树脂基板（101）的表面设置在第一树脂基板（101）的周围。 此外，第一半导体芯片（125）设置在设置在第一树脂基板（101），第二树脂基板（111）和树脂基材（109）之间的空间部分中，第一树脂基板 ）。

公开(公告)号：US08704378B2

公开(公告)日：2014-04-22

申请号：US11887235

申请日：2007-05-15

申请人： Mitsuo Sugino ,  Satoru Katsurayama ,  Hiroyuki Yamashita

发明人： Mitsuo Sugino ,  Satoru Katsurayama ,  Hiroyuki Yamashita

IPC分类号： H01L23/48

CPC分类号： H01L23/145 ,  H01L23/3735 ,  H01L23/3737 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/01049

摘要： A semiconductor device 1 is equipped with a first substrate 3 on which a first semiconductor chip 2 is mounted, a second substrate 5 on which a second semiconductor chip 4 is mounted, and connecting sections 6 that electrically connect the first substrate 3 and the second substrate 5. The first substrate 3 has build-up layers 31A and 31B in each of which an insulating layer 311 containing a resin and conductor interconnect layers 312 and 313 are laminated alternately, and the respective conductor interconnect layers 312 are connected by a conductive layer 314 provided in via holes of the insulating layers 311. The second substrate 5 also has build-up layers 31A and 31B. In the insulating layers 311 of the build-up layers in at least one substrate of the first substrate 3 and the second substrate 5, the average coefficient of thermal expansion of at least one insulating layer along the substrate inplane direction at from 25 degrees centigrade to the glass transition point is 35 ppm/degrees centigrade or less, and the average coefficient of thermal expansion along the substrate thickness direction is 35 ppm/degrees centigrade or less.

摘要翻译： 半导体器件1配备有安装有第一半导体芯片2的第一基板3，安装有第二半导体芯片4的第二基板5和将第一基板3与第二基板电连接的连接部6 第一基板3具有堆积层31A和31B，每个层叠有包含树脂和导体互连层312和313的绝缘层311交替层叠，并且各个导体互连层312通过导电层314连接 设置在绝缘层311的通孔中。第二基板5还具有堆积层31A和31B。 在第一基板3和第二基板5的至少一个基板中的堆积层的绝缘层311中，沿着基板面内方向的至少一个绝缘层的平均热膨胀系数在25摄氏度到 玻璃化转变温度为35ppm /摄氏度以下，沿着基板厚度方向的平均热膨胀系数为35ppm /摄氏度以下。

公开(公告)号：US20090243065A1

公开(公告)日：2009-10-01

申请号：US11886904

申请日：2007-04-24

申请人： Mitsuo Sugino ,  Satoru Katsurayama ,  Tomoe Yamashiro ,  Tetsuya Miyamoto ,  Hiroyuki Yamashita

发明人： Mitsuo Sugino ,  Satoru Katsurayama ,  Tomoe Yamashiro ,  Tetsuya Miyamoto ,  Hiroyuki Yamashita

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/28 ,  H01L21/50 ,  H01L21/56

CPC分类号： H01L25/0657 ,  H01L23/16 ,  H01L23/3128 ,  H01L23/562 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device (100) comprises a first resin substrate (101) on which a first semiconductor chip (125) is mounted a surface thereof; a second resin substrate (111) on which a second semiconductor chip (131) is mounted on a surface thereof; and a resin base material (109), joined to a front surface of the first resin substrate (101) and to a back surface of the second resin substrate (111), so that these surfaces are electrically connected. The resin base material (109) is disposed in a circumference of the first resin substrate (101) in the surface of the first resin substrate (101). Further, the first semiconductor chip (125) is disposed in a space section provided among the first resin substrate (101), the second resin substrate (111) and the resin base material (109) in the surface of the first resin substrate (101).

摘要翻译： 半导体器件（100）包括第一树脂基板（101），第一半导体芯片（125）的表面安装有第一树脂基板（101） 第二树脂基板（111），其表面上安装有第二半导体芯片（131）; 以及与第一树脂基板（101）的前表面和第二树脂基板（111）的背面接合的树脂基材（109），使得这些表面电连接。 树脂基材（109）在第一树脂基板（101）的表面设置在第一树脂基板（101）的周围。 此外，第一半导体芯片（125）设置在设置在第一树脂基板（101），第二树脂基板（111）和树脂基材（109）之间的空间部分中，第一树脂基板 ）。

公开(公告)号：US20100181686A1

公开(公告)日：2010-07-22

申请号：US11887235

申请日：2007-05-15

申请人： Mitsuo Sugino ,  Satoru Katsurayama ,  Hiroyuki Yamashita

发明人： Mitsuo Sugino ,  Satoru Katsurayama ,  Hiroyuki Yamashita

IPC分类号： H01L23/538 ,  H01L23/28

CPC分类号： H01L23/145 ,  H01L23/3735 ,  H01L23/3737 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/01049

摘要： A semiconductor device 1 is equipped with a first substrate 3 on which a first semiconductor chip 2 is mounted, a second substrate 5 on which a second semiconductor chip 4 is mounted, and connecting sections 6 that electrically connect the first substrate 3 and the second substrate 5. The first substrate 3 has build-up layers 31A and 31B in each of which an insulating layer 311 containing a resin and conductor interconnect layers 312 and 313 are laminated alternately, and the respective conductor interconnect layers 312 are connected by a conductive layer 314 provided in via holes of the insulating layers 311. The second substrate 5 also has build-up layers 31A and 31B. In the insulating layers 311 of the build-up layers in at least one substrate of the first substrate 3 and the second substrate 5, the average coefficient of thermal expansion of at least one insulating layer along the substrate inplane direction at from 25 degrees centigrade to the glass transition point is 35 ppm/degrees centigrade or less, and the average coefficient of thermal expansion along the substrate thickness direction is 35 ppm/degrees centigrade or less.

摘要翻译： 半导体器件1配备有安装有第一半导体芯片2的第一基板3，安装有第二半导体芯片4的第二基板5和将第一基板3与第二基板电连接的连接部6 第一基板3具有堆积层31A和31B，每个层叠有包含树脂和导体互连层312和313的绝缘层311交替层叠，并且各个导体互连层312通过导电层314连接 设置在绝缘层311的通孔中。第二基板5还具有堆积层31A和31B。 在第一基板3和第二基板5的至少一个基板中的堆积层的绝缘层311中，沿着基板面内方向的至少一个绝缘层的平均热膨胀系数在25摄氏度到 玻璃化转变温度为35ppm /摄氏度以下，沿着基板厚度方向的平均热膨胀系数为35ppm /摄氏度以下。

公开(公告)号：US08269332B2

公开(公告)日：2012-09-18

申请号：US12682649

申请日：2008-10-15

申请人： Mitsuo Sugino ,  Hideki Hara ,  Toru Meura

发明人： Mitsuo Sugino ,  Hideki Hara ,  Toru Meura

IPC分类号： H01L23/48

CPC分类号： H01L23/3735 ,  H01L23/49833 ,  H01L23/5389 ,  H01L2924/0002 ,  H05K1/0271 ,  H05K3/284 ,  H05K2203/1322 ,  H01L2924/00

摘要： A semiconductor element mounting board includes: aboard having surfaces; a semiconductor element mounted on one of the surfaces of the board; a first layer into which the semiconductor element is embedded, the first layer being provided on the one surface of the board; a second layer provided on the other surface of the board, the second layer being constituted from the same material as that of the first layer, the constituent material of the second layer having the same composition ratio as that of the constituent material of the first layer; and surface layers provided on the first and second layers, respectively, each of the surface layers being formed from at least a single layer. In such a semiconductor element mounting board, each of the surface layers has rigidity higher than that of each of the first and second layers. It is preferred that in the case where a Young's modulus of each surface layer at 25° C. is defined as X GPa and a Young's modulus of the first layer at 25° C. is defined as Y GPa, the X and the Y satisfy a relation of 0.5≦X−Y≦13.

摘要翻译： 半导体元件安装板包括：具有表面; 安装在所述板的一个表面上的半导体元件; 第一层，半导体元件被嵌入其中，第一层设置在板的一个表面上; 设置在所述板的另一个表面上的第二层，所述第二层由与所述第一层相同的材料构成，所述第二层的构成材料具有与所述第一层的构成材料相同的组成比 ; 以及分别设置在第一和第二层上的表面层，每个表面层由至少单层形成。 在这样的半导体元件安装基板中，每个表面层的刚性比第一和第二层的刚性要高。 优选的是，将25℃下的各表面层的杨氏模量定义为X GPa，在25℃下将第一层的杨氏模量定义为YGPa的情况下，X和Y满足 关系为0.5＆nlE; X-Y＆nlE; 13。

公开(公告)号：US20090226848A1

公开(公告)日：2009-09-10

申请号：US11886262

申请日：2007-05-30

申请人： Toyosei Takahashi ,  Junya Kusunoki ,  Kazuto Oonami ,  Mitsuo Sugino ,  Masakazu Kawata ,  Rie Takayama ,  Seiji Oohashi

发明人： Toyosei Takahashi ,  Junya Kusunoki ,  Kazuto Oonami ,  Mitsuo Sugino ,  Masakazu Kawata ,  Rie Takayama ,  Seiji Oohashi

IPC分类号： G03F7/20 ,  B32B38/10 ,  B32B37/12 ,  H01L31/02

CPC分类号： H01L27/14618 ,  H01L27/14632 ,  H01L27/14687 ,  H01L2224/48091 ,  H01L2924/16235 ,  H01L2924/00014

摘要： A method of manufacturing a light receiving device 1 includes: providing a resin layer 14 containing a photo curing resin on a transparent substrate 13 where a plurality of transparent substrate portions 13A are integrated so that the resin layer covers the transparent substrate 13; selectively irradiating the resin layer 14 with light, followed by a developing process, so that the resin layer 14 remains in regions of the transparent substrate 13 which surround portions corresponding to regions facing light receiving portions 11 in the transparent substrate portions 13A; dividing the transparent substrate 13 into units of transparent substrate portions 13A so that a plurality of transparent substrate portions 13A are obtained; dividing the base substrate 12 into units of base substrate portions 12A so that a plurality of base substrate portions 12A are obtained; and joining the base substrate portions 12A and the transparent substrate portions 13A via the resin layer 14.

摘要翻译： 制造光接收装置1的方法包括：在透明基板13上设置含有光固化树脂的树脂层14，其中多个透明基板部分13A被一体化，使得树脂层覆盖透明基板13; 选择性地照射树脂层14，然后进行显影处理，使得树脂层14保留在透明基板13的围绕部分对应于透明基板部分13A中的光接收部分11的区域的区域中; 将透明基板13分割为透明基板部13A的单位，得到多个透明基板部13A; 将基底基板12分割为基底部分12A的单元，从而获得多个基底部分12A; 并且经由树脂层14与基板部分12A和透明基板部分13A接合。

公开(公告)号：US08268540B2

公开(公告)日：2012-09-18

申请号：US11886262

申请日：2007-05-30

申请人： Toyosei Takahashi ,  Junya Kusunoki ,  Kazuto Oonami ,  Mitsuo Sugino ,  Masakazu Kawata ,  Rie Takayama ,  Seiji Oohashi

发明人： Toyosei Takahashi ,  Junya Kusunoki ,  Kazuto Oonami ,  Mitsuo Sugino ,  Masakazu Kawata ,  Rie Takayama ,  Seiji Oohashi

IPC分类号： G03F7/20

CPC分类号： H01L27/14618 ,  H01L27/14632 ,  H01L27/14687 ,  H01L2224/48091 ,  H01L2924/16235 ,  H01L2924/00014

摘要： A method of manufacturing a light receiving device 1 includes: providing a resin layer 14 containing a photo curing resin on a transparent substrate 13 where a plurality of transparent substrate portions 13A are integrated so that the resin layer covers the transparent substrate 13; selectively irradiating the resin layer 14 with light, followed by a developing process, so that the resin layer 14 remains in regions of the transparent substrate 13 which surround portions corresponding to regions facing light receiving portions 11 in the transparent substrate portions 13A; dividing the transparent substrate 13 into units of transparent substrate portions 13A so that a plurality of transparent substrate portions 13A are obtained; dividing the base substrate 12 into units of base substrate portions 12A so that a plurality of base substrate portions 12A are obtained; and joining the base substrate portions 12A and the transparent substrate portions 13A via the resin layer 14.

摘要翻译： 制造光接收装置1的方法包括：在透明基板13上设置含有光固化树脂的树脂层14，其中多个透明基板部分13A被一体化，使得树脂层覆盖透明基板13; 选择性地照射树脂层14，然后进行显影处理，使得树脂层14保留在透明基板13的围绕部分对应于透明基板部分13A中的光接收部分11的区域的区域中; 将透明基板13分割为透明基板部13A的单位，得到多个透明基板部13A; 将基底基板12分割为基底部分12A的单元，从而获得多个基底部分12A; 并且经由树脂层14与基板部分12A和透明基板部分13A接合。

公开(公告)号：US08247270B2

公开(公告)日：2012-08-21

申请号：US12990220

申请日：2009-05-13

申请人： Hiroki Nikaido ,  Mitsuo Sugino

发明人： Hiroki Nikaido ,  Mitsuo Sugino

IPC分类号： H01L21/44

CPC分类号： H01L23/49816 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/3114 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L24/94 ,  H01L2221/68336 ,  H01L2224/02319 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/27416 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/29388 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2224/8191 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/1579 ,  H05K3/0052 ,  H05K2201/10378 ,  H05K2201/10674 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/05341 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/05032 ,  H01L2924/05042 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A method of manufacturing a semiconductor component of the present invention has: obtaining a semiconductor wafer having stud electrodes formed on a functional surface thereof, and a circuit board having solder bumps on one surface and having electrode pads on the other surface thereof; bonding the semiconductor wafer and the circuit board, while providing a resin layer having a flux activity between the semiconductor wafer and the circuit board, and so as to bring the stud electrodes into contact with the solder bumps, while penetrating the resin layer having a flux activity, to thereby obtain a bonded structure; applying a solder material onto the electrode pads of the bonded structure; and dicing the bonded structure to obtain a plurality of semiconductor components.

摘要翻译： 本发明的半导体部件的制造方法具有：获得具有形成在其功能面上的双面电极的半导体晶片和在一个表面上具有焊料凸块的电路板，并在其另一个表面上具有电极焊盘; 接合半导体晶片和电路板，同时提供在半导体晶片和电路板之间具有通量活性的树脂层，并且使得柱状电极与焊料凸块接触，同时穿透具有焊剂的树脂层 活性，从而获得结合结构; 在焊接结构的电极焊盘上施加焊料; 并且对结合结构进行切割以获得多个半导体部件。