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    Transparent Memory for Transparent Electronic Device
    2.
    发明申请
    Transparent Memory for Transparent Electronic Device 有权
    透明电子设备透明内存

    公开(公告)号：US20120132882A1

    公开(公告)日：2012-05-31

    申请号：US13128983

    申请日：2009-07-23

    申请人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

    发明人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

    IPC分类号： H01L47/00

    CPC分类号： H01L27/12 ,  G11C13/0007 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1666

    摘要： The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.

    摘要翻译： 本发明涉及透明电子设备的透明存储器。 透明存储器包括：依次形成在透明基板上的下部透明电极层和由至少一个透明电阻变化材料层制成的数据存储区域和上部透明层。 透明电阻变化材料层由于在下部和上部透明电极层之间施加一定电压而引起的电阻变化的结果具有开关特性。 透明电阻变化材料层的光学带隙为3eV以上，可见光的材料层的透射率为80％以上。 本发明提供透明和电阻变化的存储器，其具有非常高的透明度和取决于低开关电压下的电阻变化的开关特性，并且可以在经过长时间后保持其开关特性。

    Photocathode having ultra-thin protective layer
    3.
    发明授权
    Photocathode having ultra-thin protective layer 失效
    光电阴极具有超薄的保护层

    公开(公告)号：US06674235B2

    公开(公告)日：2004-01-06

    申请号：US10112888

    申请日：2002-04-01

    申请人： Keong-Su Lim ,  Duk-Young Jeon ,  Chang-Hyun Lee ,  Sang-Su Kim

    发明人： Keong-Su Lim ,  Duk-Young Jeon ,  Chang-Hyun Lee ,  Sang-Su Kim

    IPC分类号： H01J4006

    CPC分类号： H01J1/34 ,  H01J40/06

    摘要： A photocathode structure having a photoelectric face plate protective layer, in order to prevent a photoelectric effect from being deteriorated sharply due to a high reaction of oxygen with respect to most of existing photoelectric face plate materials when the photoelectric face plate used for generating photoelectrons by a photoelectric effect is exposed to the atmosphere, is provided. For example, a diamond-like carbon thin layer is used as a photocathode protective layer, to thereby perform a function of protection of the photoelectric face plate through isolation of the photoelectric face plate from the atmosphere and enable electrons generated from the photoelectric face plate to pass through a diamond-like carbon thin layer, which is deposited thinly, by the tunneling effect so that the performance of the photocathode is not affected. By using the protective layer, the processes subsequent to the photoelectric face plate deposition process can be freely performed in the atmosphere, to thereby simplify the whole process. As a result, a production cost is lowered, and manufacturing of a device or apparatus using a large-are photocathode is facilitated.

    摘要翻译： 一种具有光电面板保护层的光电阴极结构，为了防止光电效应由于氧气相对于大多数现有光电面板材料而产生的高反应，当用于通过光电面板产生光电子的光电面板 提供光电效应暴露在大气中。 例如，使用类金刚石碳薄膜作为光电阴极保护层，由此通过将光电面板与大气隔离来实现保护光电面板的功能，并且能够使从光电面板产生的电子 通过通过隧道效应薄沉积的类金刚石碳薄层，使得光电阴极的性能不受影响。 通过使用保护层，可以在大气中自由进行光电面板沉积处理之后的处理，从而简化整个处理。 结果，降低了制造成本，并且促进了使用大的光电阴极的装置或装置的制造。

    Apparatus and method for photo-induced process
    4.
    发明授权
    Apparatus and method for photo-induced process 失效
    光诱导过程的装置和方法

    公开(公告)号：US06866721B2

    公开(公告)日：2005-03-15

    申请号：US10113750

    申请日：2002-04-01

    申请人： Keong-Su Lim ,  Sang-Su Kim

    发明人： Keong-Su Lim ,  Sang-Su Kim

    IPC分类号： H01L21/20 ,  C23C16/48 ,  H01L21/00 ,  C23C16/00 ,  H05H1/00

    CPC分类号： H01L21/67115 ,  C23C16/482 ,  C23C16/488

    摘要： Apparatus for a photo-induced process are provided, which implement a transparent film (instead of an optical window), to reduce light absorption loss that would result from use of an optical window. A photo-induced process apparatus eliminates problems of conventional systems which use optical windows, such as blurring an optical window and the surface of a light source, photo absorption loss due to the optical window and/or a purge cleaning gas, and dust generation by a moving part such as a flexible curtain. A photo-induced process apparatus efficiently utilizes light emitted from a light source.

    摘要翻译： 提供了一种用于光诱导工艺的装置，其实现透明膜（而不是光学窗口），以减少由于使用光学窗口而导致的光吸收损失。 光感应处理装置消除了使用光学窗口的常规系统的问题，例如模糊光学窗口和光源的表面，由于光学窗口和/或吹扫清洁气体引起的光吸收损失，以及通过 诸如柔性窗帘的移动部件。 感光处理装置有效地利用从光源发出的光。

    Transparent memory for transparent electronic device
    5.
    发明授权
    Transparent memory for transparent electronic device 有权
    透明内存，用于透明电子设备

    公开(公告)号：US08426841B2

    公开(公告)日：2013-04-23

    申请号：US13128983

    申请日：2009-07-23

    申请人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

    发明人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

    IPC分类号： H01L29/02

    CPC分类号： H01L27/12 ,  G11C13/0007 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1666

    摘要： The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.

    摘要翻译： 本发明涉及透明电子设备的透明存储器。 透明存储器包括：依次形成在透明基板上的下部透明电极层和由至少一个透明电阻变化材料层制成的数据存储区域和上部透明层。 透明电阻变化材料层由于在下部和上部透明电极层之间施加一定电压而引起的电阻变化的结果具有开关特性。 透明电阻变化材料层的光学带隙为3eV以上，可见光的材料层的透射率为80％以上。 本发明提供透明和电阻变化的存储器，其具有非常高的透明度和取决于低开关电压下的电阻变化的开关特性，并且可以在经过长时间后保持其开关特性。