摘要:
A method of detecting stress of an integrated circuit including first and second patterns formed from different materials may comprise: determining one or more stress detection points of the first pattern; dividing a region including a first stress detection point of the one or more stress detection points into a plurality of divided regions; calculating areas of the second pattern at the divided regions; and/or detecting a stress level applied to the first stress detection point of the first pattern by the second pattern based on the areas of the second pattern at the divided regions.
摘要:
A deposition apparatus may include a deposition-preventing member for preventing deposition of process gas on a portion of substrate removeably arranged inside a processing chamber. The deposition-preventing member may include a fixing member for fixing the deposition preventing member to a fixed body of the processing chamber, a blocking member for blocking the to-be-blocked portion of the substrate to be processed, and a guiding member for guiding fluid and particles out from the processing chamber, the guiding member may include a guiding surface that prevents a vortex from forming on the deposition-preventing member when fluid and particles are flowing out of the processing chamber.
摘要:
A semiconductor device includes a substrate, a plurality of memory cell arrays, and an air gap structure. The substrate includes a cell region, a peripheral circuit region, and a boundary region. The boundary region is between the cell region and the peripheral circuit region. The plurality of memory cell arrays are on the cell region. The air gap structure includes a trench formed in the boundary region of the substrate. The air gap structure defines an air gap.
摘要:
A semiconductor device includes a logic structure including a logic circuit disposed in a circuit region and a lower insulation covering the logic circuit, a memory structure on the logic structure, a stress relaxation structure interposed between the logic structure and the memory structure in the circuit region, and a connection structure electrically connecting the memory structure to the logic circuit along a conductive path that extends through a connection region of the device beside the circuit region.
摘要:
A method of detecting stress of an integrated circuit including first and second patterns formed from different materials may comprise: determining one or more stress detection points of the first pattern; dividing a region including a first stress detection point of the one or more stress detection points into a plurality of divided regions; calculating areas of the second pattern at the divided regions; and/or detecting a stress level applied to the first stress detection point of the first pattern by the second pattern based on the areas of the second pattern at the divided regions.
摘要:
A unified simulation system is provided. The unified simulation system includes an input database storing input data comprising an input parameter and environment information, a unified simulator executing a unified process-device-circuit simulation of characteristics of a semiconductor apparatus based on the input data and at least one predetermined model and outputting a simulation result as output data, and an output database storing the output data. The unified simulator includes a process simulator simulating at least one process based on the input data and outputting process characteristic data, a device simulator simulating at least one device based on the process characteristic data and outputting device characteristic data, and a circuit simulator simulating a circuit comprising the at least one device. Accordingly, multiple devices can be simultaneously optimized for the optimization of circuit characteristics and an accurate specification at process and device levels can be provided.
摘要:
Disclosed is a simulation method for determining wafer warpage. This method includes dividing layers and evaluating a composition ratio of materials composing the layers. The method mathematically transforms a semiconductor device, which is constructed as a complicated structure with various materials, into a simplified, mathematically equivalent stacked structure comprising a plurality of unit layer, and utilizes values of mechanical characteristics, which are obtained from the transformed layer structure, for estimating wafer warpage. As a result, it is possible to complete an operation of wafer warpage simulation using information about pattern density of the semiconductor device.
摘要:
A semiconductor device includes a substrate, a plurality of memory cell arrays, and an air gap structure. The substrate includes a cell region, a peripheral circuit region, and a boundary region. The boundary region is between the cell region and the peripheral circuit region. The plurality of memory cell arrays are on the cell region. The air gap structure includes a trench formed in the boundary region of the substrate. The air gap structure defines an air gap.
摘要:
A semiconductor device includes a logic structure including a logic circuit disposed in a circuit region and a lower insulation covering the logic circuit, a memory structure on the logic structure, a stress relaxation structure interposed between the logic structure and the memory structure in the circuit region, and a connection structure electrically connecting the memory structure to the logic circuit along a conductive path that extends through a connection region of the device beside the circuit region.
摘要:
A unified simulation system is provided. The unified simulation system includes an input database storing input data comprising an input parameter and environment information, a unified simulator executing a unified process-device-circuit simulation of characteristics of a semiconductor apparatus based on the input data and at least one predetermined model and outputting a simulation result as output data, and an output database storing the output data. The unified simulator includes a process simulator simulating at least one process based on the input data and outputting process characteristic data, a device simulator simulating at least one device based on the process characteristic data and outputting device characteristic data, and a circuit simulator simulating a circuit comprising the at least one device. Accordingly, multiple devices can be simultaneously optimized for the optimization of circuit characteristics and an accurate specification at process and device levels can be provided.