公开(公告)号：US20060068595A1

公开(公告)日：2006-03-30

申请号：US11124874

申请日：2005-05-09

申请人： Frank Seliger ,  Matthias Lehr ,  Marcel Wieland ,  Lothar Mergili ,  Frank Kuechenmeister

发明人： Frank Seliger ,  Matthias Lehr ,  Marcel Wieland ,  Lothar Mergili ,  Frank Kuechenmeister

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L24/11 ,  H01L21/304 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： In a method according to the present invention, a substrate thinning process is performed on a bumped substrate prior to the ultimate solder reflow process to heal bump defects caused by the substrate thinning process. Concurrently, the risk of substrate breakage is reduced compared to the prior art process since the number of process steps, requiring handling of thinned substrates, is reduced.

摘要翻译： 在根据本发明的方法中，在最终的焊料回流工艺之前，在凸起的衬底上执行衬底稀疏处理以愈合由衬底稀疏过程引起的突起缺陷。 同时，与现有技术方法相比，底物破裂的风险降低，因为减少了需要处理薄化基板的工艺步骤的数量。

公开(公告)号：US07375032B2

公开(公告)日：2008-05-20

申请号：US11124874

申请日：2005-05-09

申请人： Frank Seliger ,  Matthias Lehr ,  Marcel Wieland ,  Lothar Mergili ,  Frank Kuechenmeister

发明人： Frank Seliger ,  Matthias Lehr ,  Marcel Wieland ,  Lothar Mergili ,  Frank Kuechenmeister

IPC分类号： H01L21/311

CPC分类号： H01L24/11 ,  H01L21/304 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： In a method according to the present invention, a substrate thinning process is performed on a bumped substrate prior to the ultimate solder reflow process to heal bump defects caused by the substrate thinning process. Concurrently, the risk of substrate breakage is reduced compared to the prior art process since the number of process steps, requiring handling of thinned substrates, is reduced.

摘要翻译： 在根据本发明的方法中，在最终的焊料回流工艺之前，在凸起的衬底上执行衬底稀疏处理以愈合由衬底稀疏过程引起的突起缺陷。 同时，与现有技术方法相比，底物破裂的风险降低，因为减少了需要处理薄化基板的工艺步骤的数量。

公开(公告)号：US06596631B1

公开(公告)日：2003-07-22

申请号：US09626455

申请日：2000-07-26

申请人： Minh Van Ngo ,  Hartmut Ruelke ,  Lothar Mergili ,  Joerg Hohage ,  Lu You ,  Robert A. Huertas ,  Richard J. Huang

发明人： Minh Van Ngo ,  Hartmut Ruelke ,  Lothar Mergili ,  Joerg Hohage ,  Lu You ,  Robert A. Huertas ,  Richard J. Huang

IPC分类号： H01L244

CPC分类号： H01L21/76883 ,  H01L21/76834 ,  Y10S438/913

摘要： The integrity of the interface and adhesion between a barrier or capping layer and a Cu or Cu alloy interconnect member is significantly enhanced by delaying and/or slowly ramping up the introduction of silane to deposit a silicon nitride capping layer after treating the exposed planarized surface of the Cu or Cu alloy with an ammonia-containing plasma. Other embodiments include purging the reaction chamber with nitrogen at elevated temperature to remove residual gases prior to introducing the wafer for plasma treatment.

摘要翻译： 通过在处理暴露的平坦化表面之后延迟和/或缓慢地升高硅烷的引入以沉积氮化硅覆盖层来显着增强界面的完整性和阻挡层或覆盖层与Cu或Cu合金互连构件之间的粘合性 具有含氨等离子体的Cu或Cu合金。 其他实施方案包括在升高的温度下用氮气吹扫反应室以在引入用于等离子体处理的晶片之前去除残留气体。

公开(公告)号：US06368948B1

公开(公告)日：2002-04-09

申请号：US09626454

申请日：2000-07-26

申请人： Minh Van Ngo ,  Hartmut Ruelke ,  Joerg Hohage ,  Lothar Mergili

发明人： Minh Van Ngo ,  Hartmut Ruelke ,  Joerg Hohage ,  Lothar Mergili

IPC分类号： H01L2120

CPC分类号： H01L21/76838 ,  H01L21/76834

摘要： Reliably capped Cu interconnects are formed with a significant reduction in the amount and size of hillocks by reducing the time during which the Cu interconnect is exposed to elevated temperatures for plasma surface treatment and capping layer deposition. Embodiments of the present invention include maintaining a continuous plasma during surface treatment to remove copper oxide and capping layer deposition, and exposing the wafer to elevated temperatures to no greater than 60 seconds in the reaction chamber.

摘要翻译： 通过减少Cu互连暴露于升高的温度以进行等离子体表面处理和覆盖层沉积的时间，形成可靠的封盖的Cu互连，其显着减少了小丘的数量和尺寸。 本发明的实施例包括在表面处理期间保持连续等离子体以去除氧化铜和封盖层沉积，并将晶片暴露于升高的温度至不超过60秒的反应室中。