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公开(公告)号：US20120205046A1
公开(公告)日：2012-08-16
申请号：US13456308
申请日：2012-04-26
申请人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad A. Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad A. Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： H01L21/3065
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/4586 , C23C16/503 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J37/32541
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
摘要翻译： 提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。 在一个实施例中，成形电极被嵌入到基板支撑件中以在腔室内提供具有径向和轴向分量的电场。 在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。 此外，一个或多个电极可以嵌入在腔室侧壁中。
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公开(公告)号：US20090236214A1
公开(公告)日：2009-09-24
申请号：US12052431
申请日：2008-03-20
申请人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/4586 , C23C16/503 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J37/32541
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
摘要翻译： 提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。 在一个实施例中，成形电极嵌入在基板支撑件中以在腔室内提供具有径向和轴向分量的电场。 在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。 此外，一个或多个电极可以嵌入在腔室侧壁中。
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公开(公告)号：US20130213574A1
公开(公告)日：2013-08-22
申请号：US13676820
申请日：2012-11-14
申请人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： B08B7/00
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
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公开(公告)号：US08591699B2
公开(公告)日：2013-11-26
申请号：US13676820
申请日：2012-11-14
申请人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
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公开(公告)号：US08778813B2
公开(公告)日：2014-07-15
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： H01L21/31 , H01L21/469 , H01L21/00 , H01J37/32 , C23C16/46 , C23C16/509 , H01L21/67 , H01L21/30 , H01L21/42 , C23C16/00 , B05C11/11
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。
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公开(公告)号：US20110294303A1
公开(公告)日：2011-12-01
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： C23C16/44 , H01L21/30 , C23C16/509
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。
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7.发明授权公开(公告)号：US07699935B2
公开(公告)日：2010-04-20
申请号：US12142402
申请日：2008-06-19
申请人： Ramprakash Sankarakrishnan , Dale DuBois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Ramprakash Sankarakrishnan , Dale DuBois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： C25F1/00
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
摘要翻译： 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。
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8.发明申请公开(公告)号：US20100012273A1
公开(公告)日：2010-01-21
申请号：US12571677
申请日：2009-10-01
申请人： Ramprakash Sankarakrishnan , Dale DuBois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Ramprakash Sankarakrishnan , Dale DuBois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： C23F1/08
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
摘要翻译： 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。
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公开(公告)号：US20090314309A1
公开(公告)日：2009-12-24
申请号：US12142402
申请日：2008-06-19
申请人： Ramprakash Sankarakrishnan , Dale DuBois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Ramprakash Sankarakrishnan , Dale DuBois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： B08B5/00 , C23C16/56 , C23C16/513
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
摘要翻译： 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。
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公开(公告)号：US20090017635A1
公开(公告)日：2009-01-15
申请号：US12171708
申请日：2008-07-11
申请人： Ashish Shah , Ganesh Balasubramanian , Dale R. Du Bois , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
发明人： Ashish Shah , Ganesh Balasubramanian , Dale R. Du Bois , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
IPC分类号： H01L21/302 , C23F1/00
CPC分类号： H01L21/68 , Y10S414/136
摘要： The present invention comprises an apparatus and method for etching at a substrate edge region. In one embodiment, the apparatus comprises a chamber having a process volume, a substrate support arranged inside the process volume and having a substrate support surface, a plasma generator coupled to the chamber and configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface, and a gas delivery assembly coupled to a gas source for generating a radial gas flow over the substrate support surface from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.
摘要翻译： 本发明包括用于在衬底边缘区域刻蚀的设备和方法。 在一个实施例中，该装置包括具有处理体积的腔室，布置在处理体积内的衬底支撑件并且具有衬底支撑表面，等离子体发生器，耦合到腔室并且被配置为将等离子体相中的蚀刻剂供应到外围 基板支撑表面的区域以及耦合到气体源的气体输送组件，用于从衬底支撑表面的大致中心区域朝向衬底支撑表面的周边区域产生在衬底支撑表面上的径向气流。
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