Power supply device and electric apparatus

    公开(公告)号:US09620962B2

    公开(公告)日:2017-04-11

    申请号:US14135807

    申请日:2013-12-20

    CPC分类号: H02J3/46 H02J3/32 Y10T307/587

    摘要: A power supply device is connected to an external power supply and supplies electric power to a load. The power supply device includes a battery terminal that is used to connect a secondary battery, a superposition unit that superposes second electric power output from the secondary battery on first electric power supplied from the external power supply, and that outputs resultant electric power to the load; a power consumption amount retrieve unit that retrieves a power consumption amount of the load; and a controller that controls an amount of the second electric power to be output from the secondary battery, based on the power consumption amount.

    POWER SUPPLY DEVICE AND ELECTRIC APPARATUS
    3.
    发明申请
    POWER SUPPLY DEVICE AND ELECTRIC APPARATUS 有权
    电源装置和电器

    公开(公告)号:US20140183954A1

    公开(公告)日:2014-07-03

    申请号:US14135807

    申请日:2013-12-20

    IPC分类号: H02J3/46

    CPC分类号: H02J3/46 H02J3/32 Y10T307/587

    摘要: A power supply device is connected to an external power supply and supplies electric power to a load. The power supply device includes a battery terminal that is used to connect a secondary battery, a superposition unit that superposes second electric power output from the secondary battery on first electric power supplied from the external power supply, and that outputs resultant electric power to the load; a power consumption amount retrieve unit that retrieves a power consumption amount of the load; and a controller that controls an amount of the second electric power to be output from the secondary battery, based on the power consumption amount.

    摘要翻译: 电源装置连接到外部电源,并向负载供电。 电源装置包括用于连接二次电池的电池端子,叠加单元,其将从所述二次电池输出的第二电力叠加在从所述外部电源供给的第一电力上,并将所得电力输出到所述负载 ; 检索负载的电力消耗量的电力消耗量检索单元; 以及控制器,其基于所述电力消耗量来控制从所述二次电池输出的所述第二电力的量。

    Reference voltage generating circuit and power supply device using the same
    5.
    发明授权
    Reference voltage generating circuit and power supply device using the same 有权
    参考电压发生电路及其使用的电源装置

    公开(公告)号:US07982531B2

    公开(公告)日:2011-07-19

    申请号:US11915440

    申请日:2007-03-20

    IPC分类号: G05F3/24 H01L27/088

    CPC分类号: H01L27/0883

    摘要: A reference voltage generating circuit for generating a reference voltage includes MOSFETs connected to each other. At least one of the MOSFETs includes a control gate and a floating gate that is made hole-rich or discharged by ultraviolet irradiation, and the reference voltage generating circuit is configured to output the difference between threshold voltages of a pair of the MOSFETs as the reference voltage.

    摘要翻译: 用于产生参考电压的参考电压产生电路包括彼此连接的MOSFET。 MOSFET中的至少一个包括通过紫外线照射使空穴富集或放电的控制栅极和浮置栅极,并且参考电压产生电路被配置为输出一对MOSFET的阈值电压之间的差作为参考 电压。

    SURFACE TREATMENT AGENT AND SURFACE TREATMENT METHOD
    7.
    发明申请
    SURFACE TREATMENT AGENT AND SURFACE TREATMENT METHOD 审中-公开
    表面处理剂和表面处理方法

    公开(公告)号:US20110054184A1

    公开(公告)日:2011-03-03

    申请号:US12870439

    申请日:2010-08-27

    IPC分类号: C07F7/00 C09K3/00

    摘要: The object is to provide a surface treatment agent that can effectively prevent pattern collapse of an inorganic pattern or resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. In addition, as another object, the present invention has an object of providing a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent used in the surface treatment of a substrate contains a silylation agent and a silylated heterocyclic compound.

    摘要翻译: 本发明的目的是提供一种表面处理剂,其能够有效地防止在基板上设置的无机图案或树脂图案的图案塌陷,以及使用这种表面处理剂的表面处理方法。 此外,作为另一个目的,本发明的目的是提供一种能够在基材表面上高度进行甲硅烷基化处理的表面处理剂和使用这种表面处理剂的表面处理方法。 用于底物表面处理的表面处理剂含有甲硅烷基化剂和甲硅烷基化杂环化合物。

    MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME
    8.
    发明申请
    MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME 审中-公开
    用于保护膜形成的材料,以及使用其形成光电子图案的方法

    公开(公告)号:US20100124720A1

    公开(公告)日:2010-05-20

    申请号:US11995291

    申请日:2006-07-05

    IPC分类号: G03F7/20 G03F7/004

    摘要: This invention provides a material for protective film formation, comprising at least an alkali soluble polymer comprising at least one of constitutional units represented by general formulae (I) and (II) and an alcoholic solvent. The material for protective film formation can simultaneously prevent a deterioration in a resist film during liquid immersion exposure and a deterioration in a liquid for liquid immersion exposure used and, at the same time, can form a resist pattern with a good shape without the need to increase the number of treatment steps.

    摘要翻译: 本发明提供一种用于保护膜形成的材料,其至少包含含有由通式(I)和(II)表示的结构单元和醇溶剂中的至少一种的碱溶性聚合物。 用于保护膜形成的材料可以同时防止液浸期间的抗蚀剂膜的劣化和用于液浸的液体的劣化,并且同时可以形成具有良好形状的抗蚀剂图案,而不需要 增加治疗步骤的数量。

    Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line
    9.
    发明申请
    Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line 失效
    半导体晶片包括由切割线划分的半导体芯片和在划线上形成的工艺监视电极焊盘

    公开(公告)号:US20090272973A1

    公开(公告)日:2009-11-05

    申请号:US11794649

    申请日:2006-11-22

    IPC分类号: H01L23/58 H01L23/544

    摘要: The present invention discloses a semiconductor wafer having a scribe line dividing the semiconductor wafer into a matrix of plural semiconductor chips. The semiconductor wafer includes a polysilicon layer, a poly-metal interlayer insulation film formed on the polysilicon layer, and a first metal wiring layer formed on the poly-metal interlayer insulation film. The semiconductor wafer includes a process-monitor electrode pad formed on a dicing area of the scribe line. The process-monitor electrode pad has a width greater than the width of the dicing area. The process-monitor electrode pad includes a contact hole formed in the poly-metal insulation film for connecting the first metal wiring layer to the polysilicon layer.

    摘要翻译: 本发明公开了一种具有将半导体晶片分割为多个半导体芯片的矩阵的划线的半导体晶片。 半导体晶片包括形成在多晶硅层上的多晶硅层,多金属层间绝缘膜和形成在多金属层间绝缘膜上的第一金属布线层。 半导体晶片包括形成在划线的切割区域上的处理监测电极焊盘。 处理监视器电极焊盘的宽度大于切割区域的宽度。 处理监视电极焊盘包括形成在多金属绝缘膜中的接触孔,用于将第一金属布线层连接到多晶硅层。