摘要:
A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要:
An image processing device having a brightness adjustment unit having a unit processing the brightness of each pixel and a frame buffer unfolding each brightness before and after processing, and a color adjustment unit having a unit processing the color of each pixel and a frame buffer unfolding each pixel color before and after processing. The ratio (f) of the brightness of each pixel before and after adjusting is input. When the ratio (f) is equal or larger than a color emphasis parameter (ColorRate), calculates anti-numerical value that subtract the ColorRate from the ratio (f), adds the ColorRate to this anti-numerical value, and multiplies a coordinate value of the color space by the added value. When the ratio (f) is smaller than the ColorRate, multiplies the ColorRate by the coordinate value of the color space, and outputs the color of each pixel to the frame buffer.
摘要:
A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.
摘要:
A vehicle braking assist device for a host vehicle includes a risk potential computing part that computes a risk potential of the host vehicle with respect to an obstacle in the travelling direction of the host vehicle, an accelerator operation state sensor that detects the operation state of an accelerator, and a braking force application device that applies a first braking force on the host vehicle when the risk potential is higher than a predetermined first threshold and the detected operation state of the accelerator indicates that the accelerator is not being operated, and that applies a second braking force on the host vehicle irrespective of the operation state of the accelerator when the risk potential is higher than a predetermined second threshold, the risk potential represented by the second threshold being higher than the risk potential represented by the first threshold.
摘要:
Provided is a uni-axial multi-stage radial gas expander which has a high degree of reliability and which can sufficiently cope with the conditions of a high pressure and a high pressure ratio. Two or more radial gas expander sections (11A, 11B) formed of two-or-more-stage impeller vanes (14a to 14h) arranged between bearings (21a, 21b) on a rotor shaft (13) consisting of a single shaft are housed in a signal casing (10).
摘要:
A pressure regulating valve includes a device body and an actuator. The device body includes a valve seat member, a valve, which is capable of closing the first opening of the valve seat member, an urging member, which urges the valve toward the valve seat member, a piston arranged opposite to the valve across the valve seat member, an actuator, which adjusts the position of the piston, and a protrusion provided on at least one of the piston and the valve. When the tip end of the protrusion comes into contact with the piston or the valve, the second opening of the second fluid passage is closed. When the tip end of the protrusion is not in contact with any of the piston and the valve and the second opening is opened, the second fluid passage is in communication with the pressure regulation chamber.
摘要:
A parking assist control apparatus includes an obstacle detector that detects an obstacle around a vehicle; a parking operation assist unit that executes a parking operation assist for preventing a close approach between the obstacle and the vehicle when judges that a distance of the obstacle to the vehicle becomes equal-to or shorter-than a predetermined control start distance; a parking start judgment unit that judges a parking operation; a parking progress judgment unit that judges a parking progress degree during the parking operation judged by the parking start judgment unit; and a parking progress computing unit that reduces an assist control amount by the parking operation assist unit according to the parking progress degree judged by the parking progress judgment unit. According to the parking assist control apparatus, the parking operation assist for the obstacle around the vehicle can be executed more adequately.
摘要:
The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.
摘要:
An N-type semiconductor region and a floating diffusion region are disposed in an active region. A transfer gate electrode for transferring charges from a PD to an FD is disposed on a semiconductor substrate through an insulator. A part of the N-type semiconductor region constituting the PD and a part of the transfer gate electrode are overlapped with each other. A P-type semiconductor region is disposed in the active region. The P-type semiconductor region and the portion overlapped with the transfer gate electrode of the N-type semiconductor region are disposed adjacent to each other in the direction parallel to the interface of the semiconductor substrate and the insulator. The position of the impurity concentration peak of the N-type semiconductor region and the position of the impurity concentration peak of the P-type semiconductor region are different from each other in depth.
摘要:
A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region.