Semiconductor integrated circuit
    2.
    发明授权
    Semiconductor integrated circuit 有权
    半导体集成电路

    公开(公告)号:US09136717B2

    公开(公告)日:2015-09-15

    申请号:US13040891

    申请日:2011-03-04

    CPC分类号: H02J7/0016

    摘要: A circuit device connected between a neighboring pair of terminals in a semiconductor integrated circuit is protected from electrostatic damage due to a surge voltage when the surge voltage is applied between the neighboring pair of terminals. The semiconductor integrated circuit is formed to include terminals P0-P14, MOS transistors MN0-MN15 in diode connection, protection diode circuits HD0-HD14, MOS transistors T1-T14 for discharging electricity from batteries, a battery voltage detection control circuit and a clamp circuit for overvoltage protection. Each of the MOS transistors T1-T14 for discharging electricity from the batteries is connected between each neighboring pair of the terminals P0-P14 through wirings. Each of the MOS transistors MN1-MN14 in diode connection is connected between each neighboring pair of the terminals.

    摘要翻译: 当在相邻的一对端子之间施加浪涌电压时,连接在半导体集成电路中的相邻的一对端子之间的电路装置被防止由于浪涌电压的静电损伤。 半导体集成电路形成为包括端子P0-P14,二极管连接的MOS晶体管MN0-MN15,保护二极管电路HD0-HD14,用于从电池放电的MOS晶体管T1-T14,电池电压检测控制电路和钳位电路 用于过电压保护。 用于从电池放电的MOS晶体管T1-T14中的每一个通过布线连接在每个相邻的一对端子P0-P14之间。 二极管连接的MOS晶体管MN1〜MN14中的每一个连接在每个相邻的一对端子之间。

    Vehicle body lower portion structure
    4.
    发明授权
    Vehicle body lower portion structure 有权
    车身下部结构

    公开(公告)号:US08636093B2

    公开(公告)日:2014-01-28

    申请号:US13819317

    申请日:2010-08-30

    IPC分类号: B62D25/20

    摘要: To obtain a vehicle body lower portion structure that can efficiently absorb and disperse load of a front or rear collision including an offset collision or an oblique collision, and transmit the load to an underbody. A vehicle body lower portion structure has an underbody at which a dash lower portion and a lower back portion are provided to stand from both ends in a vehicle front-rear direction at a floor portion, a suspension member the length direction thereof is along a vehicle transverse direction and is joined to the underbody in a state of planarly-contacting a front surface of the dash lower portion, and a front EA member a length direction thereof is along the vehicle transverse direction and is joined to a front wall of the suspension member.

    摘要翻译: 为了获得能够有效地吸收和分散包括偏移碰撞或倾斜碰撞的前后碰撞的负载的车身下部结构,并将负载传递到底部。 车体下部结构具有底板,底面设置有仪表板下部和下后部,以便在地板部分沿车辆前后方向的两端支撑,其长度方向为沿着车辆 并且在与前下面的前表面平面接触的状态下接合到底体,并且其前方EA构件的长度方向沿着车辆横向方向并且连接到悬架构件的前壁 。

    SEMICONDUCTOR INTEGRATED CIRCUIT
    7.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT 有权
    半导体集成电路

    公开(公告)号:US20110235224A1

    公开(公告)日:2011-09-29

    申请号:US13040891

    申请日:2011-03-04

    IPC分类号: H02H3/00

    CPC分类号: H02J7/0016

    摘要: A circuit device connected between a neighboring pair of terminals in a semiconductor integrated circuit is protected from electrostatic damage due to a surge voltage when the surge voltage is applied between the neighboring pair of terminals. The semiconductor integrated circuit is formed to include terminals P0-P14, MOS transistors MN0-MN15 in diode connection, protection diode circuits HD0-HD14, MOS transistors T1-T14 for discharging electricity from batteries, a battery voltage detection control circuit and a clamp circuit for overvoltage protection. Each of the MOS transistors T1-T14 for discharging electricity from the batteries is connected between each neighboring pair of the terminals P0-P14 through wirings. Each of the MOS transistors MN1-MN14 in diode connection is connected between each neighboring pair of the terminals.

    摘要翻译: 当在相邻的一对端子之间施加浪涌电压时,连接在半导体集成电路中的相邻的一对端子之间的电路装置被防止由于浪涌电压引起的静电损伤。 半导体集成电路形成为包括端子P0-P14,二极管连接的MOS晶体管MN0-MN15,保护二极管电路HD0-HD14,用于从电池放电的MOS晶体管T1-T14,电池电压检测控制电路和钳位电路 用于过电压保护。 用于从电池放电的MOS晶体管T1-T14中的每一个通过布线连接在每个相邻的一对端子P0-P14之间。 二极管连接的MOS晶体管MN1〜MN14中的每一个连接在每个相邻的一对端子之间。

    Electrode junction structure and manufacturing method thereof
    8.
    发明授权
    Electrode junction structure and manufacturing method thereof 有权
    电极结结构及其制造方法

    公开(公告)号:US07985078B2

    公开(公告)日:2011-07-26

    申请号:US12644571

    申请日:2009-12-22

    IPC分类号: H01R12/00

    摘要: The electrode junction structure includes: a glass substrate; a plurality of flexible substrates, in a planar view, arranged to cross over an edge of the glass substrate and arranged to have a space from each other along the edge; an adhesive for joining the glass substrate and each flexible substrate; and a sealing resin for covering junction portions between the glass substrate and each flexible substrate, wherein an edge of the sealing resin is formed so that the edge of the sealing resin has, in the planar view, a consecutive waveform portion in which a convex portion and a concave portion alternate with an imaginary line as a center axis, the imaginary line being parallel to the edge of the glass substrate and locating outer than the edge of the glass substrate, and wherein the convex portions are formed to be located on the flexible substrates.

    摘要翻译: 电极结结构包括:玻璃基板; 多个柔性基板在平面图中布置成跨过玻璃基板的边缘并且被布置成沿着边缘彼此具有空间; 用于接合玻璃基板和每个柔性基板的粘合剂; 以及密封树脂,用于覆盖玻璃基板和每个柔性基板之间的接合部分,其中形成密封树脂的边缘,使得密封树脂的边缘在平面图中具有连续的波形部分,其中凸部 并且与假想线交替的凹部作为中心轴,所述假想线平行于所述玻璃基板的边缘并位于所述玻璃基板的边缘的外侧,并且其中所述凸部形成为位于所述柔性 底物。