摘要:
A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.
摘要:
A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.
摘要:
A pattern profile measuring method and apparatus for measuring the profile of a measuring portion of a pattern of a specimen placed on a specimen stage by controlling a deflector of a scanning electron microscope capable of setting a desired inclination angle of one of the specimen stage and an electron optical column, applying an electron beam to the measuring portion of the specimen, and image processing a secondary electron signal from the measuring portion. The method comprises: a first step of calculating the distance at the bottom portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at an inclination angle of zero; a second step of obtaining the number of pixels at a taper portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a first predetermined inclination angle; a third step of obtaining the number of pixels at the taper portion by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a second predetermined inclination angle different from the first inclination angle; a fourth step of calculating the taper angle and depth of the pattern in accordance with the numbers of pixels of the taper portion obtained at the second and third steps and the first and second predetermined inclination angles; and a fifth step of obtaining the profile of the taper portion in accordance with the strength change of the secondary electron signal from the taper portion.
摘要:
A positive-displacement fluid motor wherein a rotating member rotated by pressurized fluid flows to and from fluid chambers can be stopped at a desired one of at least one predetermined angular position by a torque produced by the motor itself. The fluid is supplied into at least one advancing fluid chamber of the fluid chambers which acts to rotate the rotating member in an operating direction of the motor, while causing the fluid to be discharged from at least one reversing fluid chamber of the fluid chambers which acts to rotate the rotating member in a direction opposite to the operating direction, if a motor stop command is generated when the desired angular position is ahead of a current position of the rotating member in the operating direction of the motor. The fluid is supplied into the at least one reversing fluid chamber while causing the fluid to be discharged from the at least one advancing fluid chamber, if the motor stop command is generated when the current position of the rotating member is ahead of the desired angular position in the operating direction of the motor. The rotating member functions to control the fluid flows into and from the advancing and reversing fluid chambers, depending upon the current position of the rotating member relative to the desired angular position.
摘要:
According to one embodiment, a method of fabricating a semiconductor device, including, selectively forming a first film as a core member on a film to be processed, forming a second film on a side surface and an upper surface of the core member, and on an upper surface of the film to be processed to cover the film, the second film which is constituted with same material as the first film and is doped with impurities being different in amount from impurities in the first film, removing the second film on the core member and on the film to be processed to form a sidewall mask constituted with the second film on the side surface of the core member, selectively removing the core member, and etching the film to be processed using the sidewall mask film as a mask.
摘要:
A semiconductor processing apparatus includes a load chamber, an unload chamber, a common transfer chamber, a first process chamber, and a second process chamber, which are connected via gate valves. The load and unload chambers are connected to a first vacuum-exhaust mechanism including a common dry pump. The common transfer chamber is connected to a second vacuum-exhaust mechanism including a dry pump. The first and second processes chambers are connected to a third vacuum-exhaust mechanism including a common dry pump, and first and second turbo molecular pumps. The processing apparatus includes a controller which can drive and stop the dry pumps independently of each other in coordination with open/closed switching of the gate valves, while keeping the turbo molecular pumps driven.
摘要:
The present invention is to provide an electrostatic chucking device having improved heat conductivity and at the same time increased adsorption area and improved adsorptity as well as having no uneveness on the wafer-provided face. The electrostatic chucking device of the present invention comprises a metal base, an adhesive layer, an electrode layer comprising a metal-deposited or metal-plated layer, and an electrically insulating layer possessing a face for providing a substance to be adhered by suction, laminated thereon in this order. The electrostatic chucking device is produced by a process comprising a stage for forming a metal-deposited or metal-plated layer on one face of a heat resistant film, a stage for providing a photoresist layer on the surface of the electrode layer, carrying out pattern exposure, development, and an etching processing, a stage for forming a semi-cured adhesive layer on the surface of the etched electrode layer, a stage for punching the formed laminated sheet according to the shape of a metal base, and stage for laminating the metal base and the laminate sheet via the above-mentioned adhesive and curing the laminated product.
摘要:
The present invention is to provide an electrostatic chucking device having improved heat conductivity and at the same time increased adsorption area and improved adsorptity as well as having no uneveness on the wafer-provided face. The electrostatic chucking device of the present invention comprises a metal base, an adhesive layer, an electrode layer comprising a metal-deposited or metal-plated layer, and an electrically insulating layer possessing a face for providing a substance to be adhered by suction, laminated thereon in this order. The electrostatic chucking device is produced by a process comprising a stage for forming a metal-deposited or metal-plated layer on one face of a heat resistant film, a stage for providing a photoresist layer on the surface of the electrode layer, carrying out pattern exposure, development, and an etching processing, a stage for forming a semi-cured adhesive layer on the surface of the etched electrode layer, a stage for punching the formed laminated sheet according to the shape of a metal base, and stage for laminating the metal base and the laminate sheet via the above-mentioned adhesive and curing the laminated product.
摘要:
According to this invention, a dry etching method includes the step of sequentially forming an SiO.sub.2 film, an Al--Si--Cu thin film, and a photoresist on an Si substrate to sequentially form a mask pattern, the step of etching the Al--Si--Cu thin film by RIE using a gas mixture of Cl.sub.2 and BCl.sub.3 as an etching gas, and the step of removing etching residues by a sputter effect obtained by the plasma of the BCl.sub.3 gas.
摘要:
A metal film etching method etches selectively a metal film formed on a layer insulating film provided with viaholes so as to cover the surface of the layer insulating film and fill up the viaholes so that the metal film excluding portions there of filling up the viaholes are removed completely without forming a pit in the portions of the metal film filling up the viaholes. The metal film etching method uses a mixed reactive gas of a gas containing fluorine atoms, a gas containing chlorine atoms and oxygen gas.