Method of and apparatus for measuring pattern profile
    3.
    发明授权
    Method of and apparatus for measuring pattern profile 失效
    用于测量图案的方法和装置

    公开(公告)号:US5161201A

    公开(公告)日:1992-11-03

    申请号:US651796

    申请日:1991-02-07

    IPC分类号: G01Q30/02 G01B15/00 G01Q30/04

    CPC分类号: G01B15/00

    摘要: A pattern profile measuring method and apparatus for measuring the profile of a measuring portion of a pattern of a specimen placed on a specimen stage by controlling a deflector of a scanning electron microscope capable of setting a desired inclination angle of one of the specimen stage and an electron optical column, applying an electron beam to the measuring portion of the specimen, and image processing a secondary electron signal from the measuring portion. The method comprises: a first step of calculating the distance at the bottom portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at an inclination angle of zero; a second step of obtaining the number of pixels at a taper portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a first predetermined inclination angle; a third step of obtaining the number of pixels at the taper portion by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a second predetermined inclination angle different from the first inclination angle; a fourth step of calculating the taper angle and depth of the pattern in accordance with the numbers of pixels of the taper portion obtained at the second and third steps and the first and second predetermined inclination angles; and a fifth step of obtaining the profile of the taper portion in accordance with the strength change of the secondary electron signal from the taper portion.

    Positive-displacement fluid motor having self-stopping function, and
method and control circuit for stopping the motor
    4.
    发明授权
    Positive-displacement fluid motor having self-stopping function, and method and control circuit for stopping the motor 失效
    具有自停功能的正排量流体马达,以及用于停止马达的方法和控制电路

    公开(公告)号:US4785714A

    公开(公告)日:1988-11-22

    申请号:US77860

    申请日:1987-07-27

    CPC分类号: F04B49/02

    摘要: A positive-displacement fluid motor wherein a rotating member rotated by pressurized fluid flows to and from fluid chambers can be stopped at a desired one of at least one predetermined angular position by a torque produced by the motor itself. The fluid is supplied into at least one advancing fluid chamber of the fluid chambers which acts to rotate the rotating member in an operating direction of the motor, while causing the fluid to be discharged from at least one reversing fluid chamber of the fluid chambers which acts to rotate the rotating member in a direction opposite to the operating direction, if a motor stop command is generated when the desired angular position is ahead of a current position of the rotating member in the operating direction of the motor. The fluid is supplied into the at least one reversing fluid chamber while causing the fluid to be discharged from the at least one advancing fluid chamber, if the motor stop command is generated when the current position of the rotating member is ahead of the desired angular position in the operating direction of the motor. The rotating member functions to control the fluid flows into and from the advancing and reversing fluid chambers, depending upon the current position of the rotating member relative to the desired angular position.

    摘要翻译: 一种正排量流体马达,其中通过加压流体旋转的旋转构件流过流体室可以通过由电动机本身产生的扭矩停止在至少一个预定角度位置中期望的一个。 将流体供应到流体室的至少一个前进流体室中,其用于使旋转构件在电动机的操作方向上旋转,同时使流体从流体室的至少一个反向流体室排出,其作用 如果当所需角度位置在电动机的操作方向上的旋转构件的当前位置之前产生电动机停止命令时,使旋转构件沿与操作方向相反的方向旋转。 如果当旋转构件的当前位置在期望的角位置之前产生电动机停止命令时,将流体供应到至少一个反向流体室中,同时使流体从至少一个前进流体室排出 在电机的运行方向。 旋转构件用于根据旋转构件相对于期望角度位置的当前位置来控制进入和离开前进和反向流体室的流体流动。

    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20110223769A1

    公开(公告)日:2011-09-15

    申请号:US13026527

    申请日:2011-02-14

    IPC分类号: H01L21/31

    摘要: According to one embodiment, a method of fabricating a semiconductor device, including, selectively forming a first film as a core member on a film to be processed, forming a second film on a side surface and an upper surface of the core member, and on an upper surface of the film to be processed to cover the film, the second film which is constituted with same material as the first film and is doped with impurities being different in amount from impurities in the first film, removing the second film on the core member and on the film to be processed to form a sidewall mask constituted with the second film on the side surface of the core member, selectively removing the core member, and etching the film to be processed using the sidewall mask film as a mask.

    摘要翻译: 根据一个实施例,一种制造半导体器件的方法,包括:在待加工的膜上选择性地形成作为芯部件的第一膜,在芯部件的侧表面和上表面上形成第二膜,以及在 被处理膜覆盖膜的上表面,第二膜由与第一膜相同的材料构成,并且掺杂有与第一膜中的杂质不同的杂质,除去芯上的第二膜 并且在待加工的膜上形成由芯构件的侧表面上的第二膜构成的侧壁掩模,选择性地去除芯构件,并使用侧壁掩模膜作为掩模来蚀刻待处理的膜。

    Plasma processing apparatus and method
    6.
    发明授权
    Plasma processing apparatus and method 失效
    等离子体处理装置及方法

    公开(公告)号:US06274507B1

    公开(公告)日:2001-08-14

    申请号:US09226723

    申请日:1999-01-07

    IPC分类号: H01L2131

    摘要: A semiconductor processing apparatus includes a load chamber, an unload chamber, a common transfer chamber, a first process chamber, and a second process chamber, which are connected via gate valves. The load and unload chambers are connected to a first vacuum-exhaust mechanism including a common dry pump. The common transfer chamber is connected to a second vacuum-exhaust mechanism including a dry pump. The first and second processes chambers are connected to a third vacuum-exhaust mechanism including a common dry pump, and first and second turbo molecular pumps. The processing apparatus includes a controller which can drive and stop the dry pumps independently of each other in coordination with open/closed switching of the gate valves, while keeping the turbo molecular pumps driven.

    摘要翻译: 半导体处理装置包括通过闸阀连接的装载室,卸载室,公共传送室,第一处理室和第二处理室。 装载和卸载室连接到包括普通干式泵的第一真空排气机构。 公共传送室连接到包括干式泵的第二真空排气机构。 第一和第二处理室连接到包括普通干式泵以及第一和第二涡轮分子泵的第三真空排气机构。 处理装置包括控制器,其可以在保持涡轮分子泵被驱动的同时,与闸阀的打开/关闭切换协调地彼此独立地驱动和停止干式泵。

    Electrostatic chucking device
    7.
    发明授权
    Electrostatic chucking device 失效
    静电吸盘装置

    公开(公告)号:US5851641A

    公开(公告)日:1998-12-22

    申请号:US848625

    申请日:1997-04-29

    IPC分类号: B23Q3/15 H01L21/683 B32B9/00

    摘要: The present invention is to provide an electrostatic chucking device having improved heat conductivity and at the same time increased adsorption area and improved adsorptity as well as having no uneveness on the wafer-provided face. The electrostatic chucking device of the present invention comprises a metal base, an adhesive layer, an electrode layer comprising a metal-deposited or metal-plated layer, and an electrically insulating layer possessing a face for providing a substance to be adhered by suction, laminated thereon in this order. The electrostatic chucking device is produced by a process comprising a stage for forming a metal-deposited or metal-plated layer on one face of a heat resistant film, a stage for providing a photoresist layer on the surface of the electrode layer, carrying out pattern exposure, development, and an etching processing, a stage for forming a semi-cured adhesive layer on the surface of the etched electrode layer, a stage for punching the formed laminated sheet according to the shape of a metal base, and stage for laminating the metal base and the laminate sheet via the above-mentioned adhesive and curing the laminated product.

    摘要翻译: 本发明提供一种静电吸附装置,其具有改善的导热性,并且同时增加了吸附面积和改进的吸附性,并且在晶片提供面上没有不均匀性。 本发明的静电吸附装置包括金属基底,粘合剂层,包含金属沉积或金属镀层的电极层和具有用于通过抽吸提供待粘附物质的面的电绝缘层,层压 按此顺序。 静电吸附装置通过包括在耐热膜的一个面上形成金属沉积或金属镀层的工序的工序,在电极层的表面上设置光致抗蚀剂层的工序, 曝光,显影和蚀刻处理,在蚀刻电极层的表面上形成半固化粘合剂层的阶段,根据金属基底的形状冲压所形成的层叠片的阶段和用于层压 金属基底和层压片通过上述粘合剂固化并固化层压产品。

    Electrostatic chucking device
    8.
    发明授权
    Electrostatic chucking device 失效
    静电吸盘装置

    公开(公告)号:US5645921A

    公开(公告)日:1997-07-08

    申请号:US561731

    申请日:1995-11-22

    IPC分类号: B23Q3/15 H01L21/683 B32B9/00

    摘要: The present invention is to provide an electrostatic chucking device having improved heat conductivity and at the same time increased adsorption area and improved adsorptity as well as having no uneveness on the wafer-provided face. The electrostatic chucking device of the present invention comprises a metal base, an adhesive layer, an electrode layer comprising a metal-deposited or metal-plated layer, and an electrically insulating layer possessing a face for providing a substance to be adhered by suction, laminated thereon in this order. The electrostatic chucking device is produced by a process comprising a stage for forming a metal-deposited or metal-plated layer on one face of a heat resistant film, a stage for providing a photoresist layer on the surface of the electrode layer, carrying out pattern exposure, development, and an etching processing, a stage for forming a semi-cured adhesive layer on the surface of the etched electrode layer, a stage for punching the formed laminated sheet according to the shape of a metal base, and stage for laminating the metal base and the laminate sheet via the above-mentioned adhesive and curing the laminated product.

    摘要翻译: 本发明提供一种静电吸附装置,其具有改善的导热性,并且同时增加了吸附面积和改进的吸附性,并且在晶片提供面上没有不均匀性。 本发明的静电吸附装置包括金属基底,粘合剂层,包含金属沉积或金属镀层的电极层和具有用于通过抽吸提供要粘附的物质的面的电绝缘层,层压 按此顺序。 静电吸附装置通过包括在耐热膜的一个面上形成金属沉积或金属镀层的工序的工序,在电极层的表面上设置光致抗蚀剂层的工序, 曝光,显影和蚀刻处理,在蚀刻电极层的表面上形成半固化粘合剂层的阶段,根据金属基底的形状冲压所形成的层叠片的阶段和用于层压 金属基底和层压片通过上述粘合剂固化并固化层压产品。