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    SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120126321A1

    公开(公告)日：2012-05-24

    申请号：US12952418

    申请日：2010-11-23

    申请人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

    发明人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/1095 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811

    摘要： A substrate having semiconductor material and a surface that supports a gate electrode and defines a surface normal direction is provided. The substrate can include a drift region including a first dopant type. A well region can be disposed adjacent to the drift region and proximal to the surface, and can include a second dopant type. A termination extension region can be disposed adjacent to the well region and extend away from the gate electrode, and can have an effective concentration of second dopant type that is generally less than that in the well region. An adjust region can be disposed between the surface and at least part of the termination extension region. An effective concentration of second dopant type may generally decrease when moving from the termination extension region into the adjust region along the surface normal direction.

    摘要翻译： 提供具有半导体材料的基板和支撑栅电极并限定表面法线方向的表面。 衬底可以包括包括第一掺杂剂类型的漂移区域。 阱区域可以布置成与漂移区域相邻并且靠近表面，并且可以包括第二掺杂剂类型。 端接延伸区域可以邻近阱区域设置并且远离栅电极延伸，并且可以具有通常小于阱区域中的第二掺杂剂类型的有效浓度。 可以在表面和终止延伸区域的至少一部分之间设置调整区域。 当从终止延伸区域沿着表面法线方向移动到调整区域中时，第二掺杂剂类型的有效浓度通常可以降低。

    OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
    6.
    发明申请
    OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME 有权
    光学触发式半导体器件及其制造方法

    公开(公告)号：US20130323873A1

    公开(公告)日：2013-12-05

    申请号：US13960971

    申请日：2013-08-07

    申请人： AHMED ELASSER ,  STEPHEN DALEY ARTHUR ,  ALEXEY VERT ,  STANISLAV IVANOVICH SOLOVIEV ,  PETER ALMERN LOSEE

    发明人： AHMED ELASSER ,  STEPHEN DALEY ARTHUR ,  ALEXEY VERT ,  STANISLAV IVANOVICH SOLOVIEV ,  PETER ALMERN LOSEE

    IPC分类号： H01L31/111

    CPC分类号： H01L31/1113 ,  H01L27/0817 ,  H01L29/74

    摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

    摘要翻译： 晶闸管器件包括半导体本体和导电阳极。 半导体本体具有形成多个掺杂剂结的多个掺杂层，并且包括光学晶闸管，第一放大晶闸管和开关晶闸管。 导电阳极设置在半导体本体的第一侧上。 光晶闸管被配置为接收入射辐射以产生第一电流，并且第一放大晶闸管被配置为将来自光晶闸管的第一电流增加到至少阈值电流。 开关晶闸管切换到导通状态，以便从阳极和半导体本体传导第二电流。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130221374A1

    公开(公告)日：2013-08-29

    申请号：US13597299

    申请日：2012-08-29

    申请人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Sean Matocha

    发明人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Sean Matocha

    IPC分类号： H01L29/16

    CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/1095 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811

    摘要： A semiconductor device includes a substrate comprising a semiconductor material. The substrate has a surface that defines a surface normal direction and includes a P-N junction comprising an interface between a first region and a second region, where the first (second) region includes a first (second) dopant type, so as to have a first (second) conductivity type. The substrate includes a termination extension region disposed adjacent to the P-N junction and having an effective concentration of the second dopant type that is generally the effective concentration of the second dopant type in the second doped region. The substrate includes an adjust region disposed adjacent to the surface and between the surface and at least part of the termination extension region, where the effective concentration of the second dopant type generally decreases when moving from the termination extension region into the adjust region along the surface normal direction.

    摘要翻译： 半导体器件包括包含半导体材料的衬底。 衬底具有限定表面法线方向的表面，并且包括PN结，其包括在第一区域和第二区域之间的界面，其中第一（第二）区域包括第一（第二）掺杂剂类型，以便具有第一 （第二）导电类型。 衬底包括邻近P-N结设置并且具有通常为第二掺杂区域中的第二掺杂剂类型的有效浓度的第二掺杂剂类型的有效浓度的终止延伸区域。 衬底包括与表面相邻并且在表面与终止延伸区域的至少一部分之间布置的调节区域，其中当从端接延伸区域沿着表面移动到调节区域中时，第二掺杂剂类型的有效浓度通常降低 正常方向