公开(公告)号：US06521914B2

公开(公告)日：2003-02-18

申请号：US10112175

申请日：2002-03-29

Applicant: Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

Inventor： Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

IPC: H01L29267

CPC classification number: H01L33/62 ,  G09G2360/148 ,  H01L25/167 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

Abstract translation: 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。

公开(公告)号：US5909037A

公开(公告)日：1999-06-01

申请号：US5908

申请日：1998-01-12

Applicant: Pradeep Rajkomar ,  William J. Beecher

Inventor： Pradeep Rajkomar ,  William J. Beecher

IPC: H01L25/075 ,  H01L33/48 ,  H01L33/62 ,  H01L33/00

CPC classification number: H01L25/0753 ,  H01L2924/0002 ,  H01L33/483 ,  H01L33/62

Abstract: A x-y array of light emitting diodes has insert molded leadframes to minimize manufacturing costs during assembly.

Abstract translation: 发光二极管的x-y阵列具有插入模制的引线框，以在组装期间最小化制造成本。

公开(公告)号：US06486499B1

公开(公告)日：2002-11-26

申请号：US09469657

申请日：1999-12-22

Applicant: Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

Inventor： Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

IPC: H01L2715

CPC classification number: H01L33/62 ,  G09G2360/148 ,  H01L25/167 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

Abstract translation: 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。

公开(公告)号：US06844571B2

公开(公告)日：2005-01-18

申请号：US10071507

申请日：2002-02-07

Applicant: Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

Inventor： Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

IPC: H01L27/15 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L33/64 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/62 ,  G09G2360/148 ,  H01L25/167 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

Abstract translation: 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。

公开(公告)号：US06514782B1

公开(公告)日：2003-02-04

申请号：US09470450

申请日：1999-12-22

Applicant: Jonathan J. Wierer, Jr. ,  Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar

Inventor： Jonathan J. Wierer, Jr. ,  Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar

IPC: H01L2100

CPC classification number: H01L33/405 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/60 ,  H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2924/01322 ,  H01L2924/00

Abstract: The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

Abstract translation: 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。