公开(公告)号：US06486499B1

公开(公告)日：2002-11-26

申请号：US09469657

申请日：1999-12-22

申请人： Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

发明人： Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

IPC分类号： H01L2715

CPC分类号： H01L33/62 ,  G09G2360/148 ,  H01L25/167 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

摘要翻译： 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。

公开(公告)号：US06521914B2

公开(公告)日：2003-02-18

申请号：US10112175

申请日：2002-03-29

申请人： Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

发明人： Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

IPC分类号： H01L29267

CPC分类号： H01L33/62 ,  G09G2360/148 ,  H01L25/167 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

摘要翻译： 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。

公开(公告)号：US06844571B2

公开(公告)日：2005-01-18

申请号：US10071507

申请日：2002-02-07

申请人： Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

发明人： Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar ,  Jonathan J. Wierer, Jr. ,  Tun S Tan

IPC分类号： H01L27/15 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L33/64 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/62 ,  G09G2360/148 ,  H01L25/167 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

摘要翻译： 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。

公开(公告)号：US06514782B1

公开(公告)日：2003-02-04

申请号：US09470450

申请日：1999-12-22

申请人： Jonathan J. Wierer, Jr. ,  Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar

发明人： Jonathan J. Wierer, Jr. ,  Michael R Krames ,  Daniel A. Steigerwald ,  Fred A. Kish, Jr. ,  Pradeep Rajkomar

IPC分类号： H01L2100

CPC分类号： H01L33/405 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/60 ,  H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2924/01322 ,  H01L2924/00

摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

摘要翻译： 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。

公开(公告)号：US5779924A

公开(公告)日：1998-07-14

申请号：US620518

申请日：1996-03-22

申请人： Michael R. Krames ,  Fred A. Kish, Jr.

发明人： Michael R. Krames ,  Fred A. Kish, Jr.

IPC分类号： H01L33/20 ,  H01L33/22 ,  B44C1/22

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/38

摘要： This method relates to the fabrication of semiconductor light-emitting devices having at least one ordered textured interface. Controlled interface texturing with an ordered pattern is provided on any or all interfaces of such a device to enhance light extraction from these interfaces and thus improve the performance of the device. Ordered interface texturing offers an improvement in light extraction by increasing the transmission of total optical power from the device into the ambient. This improvement is possible because ordered interface texturing can provide: 1) a reduction in Fresnel losses at the interface between the device and the ambient and, 2) a change or increase in the angular bandwidth of light which may transmit power into the ambient. This latter effect may be thought of a change or increase in the escape cone at an interface. Both effects can result in an overall increase in total light extraction efficiency for the LED.

摘要翻译： 该方法涉及具有至少一个有序纹理界面的半导体发光器件的制造。 在这种设备的任何或所有接口上提供具有有序模式的受控接口纹理，以增强从这些接口的光提取，从而提高设备的性能。 有序的界面纹理通过增加从设备到环境中的总光功率的传输来提供光提取的改进。 这种改进是可能的，因为有序的界面纹理可以提供：1）在设备和环境之间的接口处减少菲涅尔损耗，以及2）可以将功率传输到环境中的光的角度带宽的改变或增加。 后一种效应可以被认为在界面处的逃避锥的变化或增加。 这两种效应可以导致LED的总光提取效率的总体增加。

公开(公告)号：US07491565B2

公开(公告)日：2009-02-17

申请号：US11330209

申请日：2006-01-10

申请人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Paul S Martin

发明人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Paul S Martin

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01S5/0216 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/32341

摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.

摘要翻译： 描述了从蓝宝石生长衬底去除发光层所产生的用于制造InAlGaN发光器件的器件和技术。 在几个实施例中，描述了用于制造导致改进的性能和/或成本效益的垂直InAlGaN发光二极管结构的技术。 此外，采用金属结合，衬底剥离和新颖的RIE器件分离技术来有效地在选择用于其导热性和易于制造的衬底上生产垂直GaN LED。

公开(公告)号：US06280523B1

公开(公告)日：2001-08-28

申请号：US09245448

申请日：1999-02-05

申请人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  R. Scott Kern ,  Michael R. Krames ,  Paul S. Martin

发明人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  R. Scott Kern ,  Michael R. Krames ,  Paul S. Martin

IPC分类号： C30B2512

CPC分类号： H01L33/465 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/105 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/32341 ,  Y10S117/915

摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。

公开(公告)号：US06800500B2

公开(公告)日：2004-10-05

申请号：US10631001

申请日：2003-07-29

申请人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Paul S Martin

发明人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Paul S Martin

IPC分类号： H01L2120

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01S5/0216 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/32341

摘要： A III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light emitting layer is grown on a growth substrate. The III-nitride light-emitting structure is wafer bonded to a host substrate, then the growth substrate is removed. In some embodiments, a first electrical contact and first bonding layer are formed on the III-nitride light-emitting structure. A second bonding layer is formed on the host substrate. In such embodiments, wafer bonding the III-nitride light emitting structure to the host substrate comprises bonding the first bonding layer to the second bonding layer. After the growth substrate is removed, a second electrical contact may be formed on a side of the III-nitride light-emitting device exposed by removal of the growth substrate.

公开(公告)号：US06320206B1

公开(公告)日：2001-11-20

申请号：US09245435

申请日：1999-02-05

申请人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

发明人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

IPC分类号： H01L3300

CPC分类号： H01L33/105 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/465 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/34333 ,  Y10S438/977

摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。

公开(公告)号：US06420199B1

公开(公告)日：2002-07-16

申请号：US09923711

申请日：2001-08-06

申请人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

发明人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

IPC分类号： H05L2120

CPC分类号： H01L33/105 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/465 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/34333 ,  Y10S438/977

摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术来实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。