公开(公告)号：US20120281727A1

公开(公告)日：2012-11-08

申请号：US13099429

申请日：2011-05-03

Applicant: Rui Yu Fang ,  Guido Alberto Roggero ,  Luigi Tallone

Inventor： Rui Yu Fang ,  Guido Alberto Roggero ,  Luigi Tallone

IPC: H01S5/18 ,  H01S5/34 ,  H01L21/30

CPC classification number: G02B6/12004 ,  H01S5/026 ,  H01S5/0267 ,  H01S5/0425 ,  H01S5/162 ,  H01S5/18 ,  H01S2301/176

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.

Abstract translation: 提供一种表面发射半导体激光器件，其包括集成在具有各种反射器的半导体材料中的边缘发射激光器和衍射透镜。 边缘发射激光器具有包括有源MQW区域的第一部分，包括无源区域的第二部分和包括半绝缘或未掺杂半导体体层的第三部分。 该配置确保了注入电流将通过有源区域的所有层，从而防止由于MQW有源区域的未注入区域引起的光学损耗的发生。 此外，包括无源区域确保没有电流通过有源MQW区域和再生长半导体体层之间的界面。 后者的功能提高了性能和设备的可靠性。

公开(公告)号：US07548574B2

公开(公告)日：2009-06-16

申请号：US11153672

申请日：2005-06-15

Applicant: Claudio Coriasso ,  Rui Yu Fang ,  Guido Roggero ,  Marzia Rosso ,  Simone Codato

Inventor： Claudio Coriasso ,  Rui Yu Fang ,  Guido Roggero ,  Marzia Rosso ,  Simone Codato

IPC: H01S3/08 ,  H01S3/113

CPC classification number: G02B6/12004 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1082 ,  H01S5/12 ,  H01S5/2214 ,  H01S5/227

Abstract: An laser/modulator assembly includes a laser source, such as a distributed feedback (DFB) laser, and a modulator, such as an electro-absorption modulator (EAM), integrated along a common waveguide. The waveguide has a distal end bent to define an inner side of the bent waveguide. A low reflectivity facet is arranged at the distal end of the waveguide, and a mirror is arranged at the inner side of the distal end of the waveguide to prevent any back reflection into the EAM waveguide from said low reflectivity facet, and the lateral trenches typically associated therewith.

Abstract translation: 激光/调制器组件包括诸如分布式反馈（DFB）激光器的激光源以及沿着公共波导集成的调制器，例如电吸收调制器（EAM）。 波导具有弯曲以限定弯曲波导的内侧的远端。 在波导的远端布置有低反射面，并且反射镜布置在波导的远端的内侧，以防止从所述低反射性小面反射入EAM波导的任何反射，并且横向沟槽通常 相关联。

公开(公告)号：US08072363B2

公开(公告)日：2011-12-06

申请号：US12672348

申请日：2008-08-11

Applicant: Rui Yu ,  Yong Ping Xu

Inventor： Rui Yu ,  Yong Ping Xu

IPC: H03M3/00

CPC classification number: H03M3/408 ,  H03M3/434 ,  H03M3/454

Abstract: Various embodiments of this disclosure may describe a bandpass sigma-delta modulator (BP ΣΔM) comprising an electromechanical filter, a quantizer coupled to the electromechanical filter, and a feedback circuit coupled between the quantizer and the electromechanical filter. Other embodiments be also be disclosed or claimed.

Abstract translation: 本公开的各种实施例可以描述包括机电滤波器，耦合到机电滤波器的量化器和耦合在量化器和机电滤波器之间的反馈电路的带通Σ-Δ调制器（BP＆Sgr;＆Dgr; M）。 其他实施例也将被公开或要求保护。

公开(公告)号：US20100290489A1

公开(公告)日：2010-11-18

申请号：US12466439

申请日：2009-05-15

Applicant: Michele Agresti ,  Guido Alberto Roggero ,  Rui Yu Fang ,  Roberto Paoletti

Inventor： Michele Agresti ,  Guido Alberto Roggero ,  Rui Yu Fang ,  Roberto Paoletti

IPC: H01S3/10 ,  H01S3/08

CPC classification number: H01S5/12 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/0654 ,  H01S5/1085 ,  H01S5/124

Abstract: An EML assembly is provided that has and EAM and a DFB, with the DFB having an asymmetric ¼ wavelength phase shift positioned at a location that is in front of the center of the periodic structure of the DFB. In addition, the EML assembly has a tilted or bent waveguide that reduces reflections occurring at the front end facet, thereby enabling the EAM to produce a relatively high POUT level while also achieving reduced chirp and high single-mode yield in the DFB. By providing the EML assembly with a tilted or bent waveguide, the reflections at the front end facet are reduced without having to use an AR coating on the front end facet that has an extremely low reflectivity. By avoiding the need to use an AR coating on the front end facet that has an extremely low reflectivity, the AR coating that is used on the front end facet can be made using standard sputter deposition techniques to enable higher manufacturing yields to be achieved.

Abstract translation: 提供了一种EML组件，其具有EAM和DFB，其中DFB具有位于DFB的周期性结构的中心前方的位置处的不对称的1/4波长相移。 此外，EML组件具有倾斜或弯曲的波导，其减小在前端小面处发生的反射，从而使得EAM能够产生相对较高的POUT电平，同时还实现DFB中的啁啾和高单模产量的降低。 通过为EML组件提供倾斜或弯曲的波导，前端小面处的反射减小，而不必在具有极低反射率的前端小面上使用AR涂层。 通过避免在具有极低反射率的前端小面上使用AR涂层的需要，可以使用标准溅射沉积技术制造用于前端小面的AR涂层，以实现更高的制造成品率。

公开(公告)号：US20080197943A1

公开(公告)日：2008-08-21

申请号：US11996252

申请日：2005-07-20

Applicant: Yong Ping Xu ,  Rui Yu

Inventor： Yong Ping Xu ,  Rui Yu

IPC: H03H9/02

CPC classification number: H03H9/46 ,  H03M3/322 ,  H03M3/404 ,  H03M3/458 ,  H04B14/06

Abstract: Briefly, in accordance with one embodiment of the invention, a resonator such as an electromechanical resonator may be coupled with a cancellation network to reduce and/or cancel an anti-resonance effect in the resonator, which may be due to, for example, a static capacitance inherent in the resonator. Cancellation of an anti resonance effect from the resonator response may allow a resonance effect of the resonator to be a predominant effect to allow the resonator to be utilized as a bandpass filter having a relatively higher Q, for example in a bandpass sigma-delta modulator that may be utilized in a digital RF receiver.

Abstract translation: 简而言之，根据本发明的一个实施例，诸如机电谐振器的谐振器可以与消除网络耦合以减少和/或消除谐振器中的抗共振效应，这可能是由于例如 谐振器固有的静态电容。 从谐振器响应消除反共振效应可以允许谐振器的共振效应是主要效应，以允许谐振器被用作具有相对较高Q的带通滤波器，例如在带通Σ-Δ调制器 这可以用在数字RF接收机中。

公开(公告)号：US08582618B2

公开(公告)日：2013-11-12

申请号：US13008239

申请日：2011-01-18

Applicant: Guido Alberto Roggero ,  Rui Yu Fang ,  Alessandro Stano ,  Giuliana Morello

Inventor： Guido Alberto Roggero ,  Rui Yu Fang ,  Alessandro Stano ,  Giuliana Morello

IPC: H01S5/026

CPC classification number: H01S5/18 ,  H01S5/026 ,  H01S5/141

Abstract: A surface-emitting semiconductor laser device that includes an edge-emitting laser formed in layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.

Abstract translation: 一种表面发射半导体激光器件，其包括形成在半导体衬底上的半导体材料层的边缘发射激光器，设置在衬底上的聚合物材料，其横向邻近形成边缘发射激光器的层，衍射或 折射透镜形成在聚合物材料的上表面上，侧反射器形成在聚合物材料的倾斜的侧面反射器小面上，大体上面对激光器的出射端面，以及下反射器，设置在聚合物材料下方的基底上。 激光从出射端小面出射，并在被侧反射器反射向下反射器反射之前传播通过聚合物材料。 然后，激光被下反射器重新反射到透镜，其将激光沿着基本上垂直于衬底的上表面的方向引导出设备。

公开(公告)号：US20130068292A1

公开(公告)日：2013-03-21

申请号：US13608140

申请日：2012-09-10

Applicant: Zhiyong Fan ,  Rui Yu

Inventor： Zhiyong Fan ,  Rui Yu

IPC: H01L31/18 ,  H01L31/0236 ,  C25D11/24

CPC classification number: C25D1/006 ,  C25D11/045 ,  H01L31/02366 ,  H01L31/0392 ,  H01L31/03926 ,  Y02E10/50

Abstract: Described herein is a method for obtaining a three-dimensional nanostructure array on an aluminum substrate. The method includes anodizing the aluminum substrate; forming an oxide layer on the aluminum substrate; texturizing the aluminum substrate; etching the oxide layer from the aluminum substrate to expose the texturized aluminum substrate; and forming a three-dimensional aluminum nanostructure array on the aluminum substrate. The three-dimensional nanostructure array, coated with a light absorber, is utilized in a thin film solar cell or photovoltaic cell.

Abstract translation: 本文描述了一种在铝基板上获得三维纳米结构阵列的方法。 该方法包括阳极氧化铝基板; 在铝基板上形成氧化物层; 铝基材的组织化; 从铝基板蚀刻氧化物层以暴露出纹理化的铝基板; 并在铝基板上形成三维铝纳米结构阵列。 涂覆有光吸收剂的三维纳米结构阵列用于薄膜太阳能电池或光伏电池中。

公开(公告)号：US20120195336A1

公开(公告)日：2012-08-02

申请号：US13018581

申请日：2011-02-01

Applicant: Rui Yu Fang ,  Guido Alberto Roggero ,  Giuliana Morello ,  Roberto Paoletti ,  Michele Agresti

Inventor： Rui Yu Fang ,  Guido Alberto Roggero ,  Giuliana Morello ,  Roberto Paoletti ,  Michele Agresti

IPC: H01S5/183 ,  H01L33/60

CPC classification number: H01S5/0071 ,  H01S5/026 ,  H01S5/028 ,  H01S5/12 ,  H01S5/18 ,  H01S5/22

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, and a reflector formed in or on an angled side facet of the polymer material generally facing an exit end facet of the laser. Laser light passes out of the exit end facet propagates through the polymer material before being reflected by the reflector out of the device in a direction that is generally normal to the upper surface of the substrate.

Abstract translation: 提供一种表面发射半导体激光器件，其包括形成在设置在半导体衬底上的各种半导体材料中的边缘发射激光器，设置在基板上的与形成边缘发射激光器的层横向相邻的聚合物材料， 以及形成在聚合物材料的倾斜的侧面中或其上的反射器，该反射器大致面对激光器的出射端面。 从出口端小面出射的激光通过聚合物材料传播，然后被反射器反射出装置的方向通常垂直于基板的上表面。

公开(公告)号：US07965157B2

公开(公告)日：2011-06-21

申请号：US11996252

申请日：2005-07-20

Applicant: Yong Ping Xu ,  Rui Yu

Inventor： Yong Ping Xu ,  Rui Yu

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/64 ,  H03M3/02 ,  H04B14/06

CPC classification number: H03H9/46 ,  H03M3/322 ,  H03M3/404 ,  H03M3/458 ,  H04B14/06

Abstract: Briefly, in accordance with one embodiment of the invention, a resonator such as an electromechanical resonator may be coupled with a cancellation network to reduce and/or cancel an anti-resonance effect in the resonator, which may be due to, for example, a static capacitance inherent in the resonator. Cancellation of an anti resonance effect from the resonator response may allow a resonance effect of the resonator to be a predominant effect to allow the resonator to be utilized as a bandpass filter having a relatively higher Q, for example in a bandpass sigma-delta modulator that may be utilized in a digital RF receiver.

Abstract translation: 简而言之，根据本发明的一个实施例，诸如机电谐振器的谐振器可以与消除网络耦合以减少和/或消除谐振器中的抗共振效应，这可能是由于例如 谐振器固有的静态电容。 从谐振器响应消除反共振效应可以允许谐振器的共振效应是主要效应，以允许谐振器被用作具有相对较高Q的带通滤波器，例如在带通Σ-Δ调制器 这可以用在数字RF接收机中。

公开(公告)号：US20100259431A1

公开(公告)日：2010-10-14

申请号：US12672348

申请日：2008-08-11

Applicant: Rui Yu ,  Yong Ping Xu

Inventor： Rui Yu ,  Yong Ping Xu

IPC: H03M3/00

CPC classification number: H03M3/408 ,  H03M3/434 ,  H03M3/454

Abstract: The present invention relates broadly to a system and method for bandpass sigma-delta modulation. The continuous time bandpass sigma-delta modulator comprises an electromechanical filter, a quantizer coupled to an output from the electromechanical filter; and a feedback circuit coupled between an output from the quantizer and an input of the electromechanical filter.

Abstract translation: 本发明广泛地涉及用于带通Σ-Δ调制的系统和方法。 连续时间带通Σ-Δ调制器包括机电滤波器，耦合到机电滤波器的输出的量化器; 以及耦合在量化器的输出和机电滤波器的输入之间的反馈电路。