公开(公告)号：US08686711B2

公开(公告)日：2014-04-01

申请号：US13048104

申请日：2011-03-15

申请人： Ryohei Tanaka ,  Yoshifumi Ibuki

发明人： Ryohei Tanaka ,  Yoshifumi Ibuki

IPC分类号： G01R23/02

CPC分类号： H01J37/32183 ,  H01J37/32935

摘要： A method for calibrating a high frequency measuring device so as to accurately measure plasma processing parameters within a chamber. A calibration parameter is calculated from a first set of three reference loads measured by a high frequency measurement device. A second calibration parameter is calculated from S parameters measured between a connection point where the high-frequency measuring device is connected and the inside of the chamber of a plasma processing device. A second set of three reference loads, which include the impedance previously calculated and encompass a range narrower than that encompassed by the first set of three reference loads, is measured with the reference loads in the chamber. Another calibration parameter is calculated from the measured impedances of the second set of three reference loads measured by the high- frequency measuring device, and the true values of those impedances, and a detected voltage signal and a detected current signal are calibrated using the above calibration parameters.

摘要翻译： 一种用于校准高频测量装置以精确测量腔室内的等离子体处理参数的方法。 根据由高频测量装置测量的第一组三个参考载荷来计算校准参数。 从连接高频测量装置的连接点与等离子体处理装置的室内测量的S参数计算出第二校准参数。 使用腔室中的参考负载测量第二组三个参考负载，其包括先前计算的阻抗并且包含比由第一组三个参考负载包围的范围窄的范围。 从由高频测量装置测量的第二组三个参考载荷的测量阻抗计算出另一个校准参数，并且使用上述校准校准那些阻抗的真实值，检测到的电压信号和检测到的电流信号 参数。

公开(公告)号：US20110234201A1

公开(公告)日：2011-09-29

申请号：US13048104

申请日：2011-03-15

申请人： Ryohei TANAKA ,  Yoshifumi IBUKI

发明人： Ryohei TANAKA ,  Yoshifumi IBUKI

IPC分类号： G01R23/02

CPC分类号： H01J37/32183 ,  H01J37/32935

摘要： A method is provided for calibrating a high-frequency, measuring device so as to accurately measure high-frequency parameters within a chamber. A calibration parameter is calculated from impedance of a first set of three reference loads measured by a high-frequency measuring device and the true values of those impedances. A calibration parameter is calculated from an S parameter measured between a connection point where the high-frequency measuring device is connected and the inside of the chamber of a plasma processing device. An impedance within the chamber is calculated from a voltage signal and a current signal calibrated using the above calibration parameters. A second set of three reference loads, which include the impedance calculated in Step 5 and encompass a range narrower than that encompassed by the first set of three reference loads, is determined. Another calibration parameter is calculated from impedances of the second set of three reference loads measured by the high-frequency measuring device and the true values of those impedances, and a detected voltage signal and a detected current signal are calibrated using the above calibration parameters.

摘要翻译： 提供了一种用于校准高频测量装置以便精确地测量腔室内的高频参数的方法。 从由高频测量装置测量的第一组三个参考载荷的阻抗和这些阻抗的真实值的阻抗来计算校准参数。 根据在连接高频测量装置的连接点与等离子体处理装置的室内之间测量的S参数来计算校准参数。 从电压信号和使用上述校准参数校准的电流信号计算室内的阻抗。 第二组三个参考载荷，其包括在步骤5中计算的阻抗并且包含比由第一组三个参考载荷所包围的阻抗窄的范围。 通过由高频测量装置测量的第二组三个参考载荷的阻抗和这些阻抗的真实值的阻抗计算另一个校准参数，并且使用上述校准参数校准检测到的电压信号和检测到的电流信号。

公开(公告)号：US07492817B2

公开(公告)日：2009-02-17

申请号：US11056449

申请日：2005-02-11

申请人： Ryohei Tanaka ,  Toyokazu Kitano

发明人： Ryohei Tanaka ,  Toyokazu Kitano

IPC分类号： H03H7/30

CPC分类号： H03H21/0012

摘要： An adaptive digital filter includes a filtering circuit and a coefficient renewal circuit. The filtering circuit has a coefficient a defined by a fundamental formula: a[n+1]=a[n]+β·e[n]·q[n]/p[n]. β is a number greater than 0 and smaller than 2, e[n] is a difference between the input and the output of the filter, and q[n] and p[n] are formulas. The renewal circuit calculates a renewal value of the coefficient a. The coefficient renewal circuit calculates 2m (m is an integer) greater than p[n] in the fundamental formula, and also calculates the renewal value of the coefficient a in accordance with an execution formula: a[n+1]=a[n]+β·e[n]·q[n]/2m in place of the fundamental formula.

摘要翻译： 自适应数字滤波器包括滤波电路和系数更新电路。 滤波电路具有由基本公式a [n + 1] = a [n] + beta.e [n] .q [n] / p [n]定义的系数α。 β是大于0且小于2的数，e [n]是滤波器的输入和输出之间的差，q [n]和p [n]是公式。 更新电路计算系数a的更新值。 系数更新电路在基本公式中计算大于p [n]的2m（m是整数），并且还根据执行公式计算系数a的更新值：a [n + 1] = a [n ] + beta.e [n] .q [n] / 2m代替基本公式。

公开(公告)号：US07489145B2

公开(公告)日：2009-02-10

申请号：US11636389

申请日：2006-12-08

申请人： Hiroshi Matoba ,  Ryohei Tanaka ,  Shuji Omae ,  Shigeki Amadatsu

发明人： Hiroshi Matoba ,  Ryohei Tanaka ,  Shuji Omae ,  Shigeki Amadatsu

IPC分类号： G01R27/08

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32935

摘要： A high-frequency measurement unit includes a signal detector for detecting a high-frequency signal, and a calibration coefficient storage for storing calibration coefficients Cmin and Cmax used to calibrate a value Amin detected at the lowest limit frequency fmin and a value Amax detected at the uppermost limit frequency fmax to a proper measurement value Asmin and to a proper measurement value Asmax, respectively. The high-frequency measurement unit further includes a frequency detection unit for detecting a frequency fm of the high-frequency signal, a calibration coefficient calculation unit for calculating a calibration coefficient Cm for the frequency fm, and a calibration unit for calibrating the value Am detected by the signal detector to a proper measurement value Asm by using the calibration coefficient Cm calculated by the calibration coefficient calculation unit.

摘要翻译： 高频测量单元包括用于检测高频信号的信号检测器和用于存储校准系数Cmin和Cmax的校准系数存储器，用于校准在最低限频率fmin处检测到的值A a和 分别为适当的测量值Asmin和适当的测量值Asmax的最上限频率fmax。 高频测量单元还包括用于检测高频信号的频率fm的频率检测单元，用于计算频率fm的校准系数Cm的校准系数计算单元和用于校准检测到的值Am的校准单元 通过使用由校准系数计算单元计算出的校准系数Cm，通过信号检测器到适当的测量值Asm。

公开(公告)号：US5149730A

公开(公告)日：1992-09-22

申请号：US537316

申请日：1990-06-13

申请人： Yasuyuki Murata ,  Isako Konishi ,  Ryohei Tanaka ,  Yoshinori Nakanishi

发明人： Yasuyuki Murata ,  Isako Konishi ,  Ryohei Tanaka ,  Yoshinori Nakanishi

IPC分类号： H01L23/29 ,  C08G59/20 ,  C08G59/24 ,  C08G59/62 ,  C08L63/00 ,  C08L63/02 ,  H01B3/40 ,  H01L23/31

CPC分类号： H01B3/40 ,  C08G59/245 ,  C08L63/00

摘要： An electrical encapsulation formulation is provided comprising a diglycidyl ether of a 4,4'-dihydroxybiphenyl, a trisphenolic curing agent, a cure accelerator and an inorganic filler. The composition cures rapidly and exhibits excellent resistance to cracking under high-temperature operation.

摘要翻译： 提供了包含4,4'-二羟基联苯的二缩水甘油醚，三酚固化剂，固化促进剂和无机填料的电气封装配方。 该组合物快速固化并且在高温操作下表现出优异的抗开裂性。

公开(公告)号：US4530952A

公开(公告)日：1985-07-23

申请号：US564190

申请日：1983-12-22

申请人： Toshiyuki Tayama ,  Ryohei Tanaka

发明人： Toshiyuki Tayama ,  Ryohei Tanaka

IPC分类号： C08L25/00 ,  C08K5/17 ,  C08K5/20 ,  C08L7/00 ,  C08L21/00 ,  C08L25/04 ,  C08L33/00 ,  C08L33/02 ,  C08L51/00 ,  C08L51/02 ,  C08L71/00 ,  C08L71/12 ,  C08L71/04

CPC分类号： C08L71/12 ,  C08K5/20

摘要： A polyphenylene ether composition comprising polyphenylene ether or a composition containing polyphenylene ether and styrene resin, and a diamide compound represented by the following formula. ##STR1## This composition is improved in processability due to high flowability, with a minimum of decrease in heat resistance.

摘要翻译： 包含聚苯醚或含有聚苯醚和苯乙烯树脂的组合物的聚苯醚组合物和由下式表示的二酰胺化合物。 由于流动性高，耐热性降低最小，因此该组合物的加工性提高。

公开(公告)号：US08203859B2

公开(公告)日：2012-06-19

申请号：US11954436

申请日：2007-12-12

申请人： Shuji Omae ,  Kosuke Maeda ,  Ryohei Tanaka ,  Hideo Ito

发明人： Shuji Omae ,  Kosuke Maeda ,  Ryohei Tanaka ,  Hideo Ito

IPC分类号： H02M5/00 ,  H02P11/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32183 ,  H03H7/40

摘要： A high frequency device for supplying a high frequency power to a load, the high frequency device includes: an oscillating unit that can vary an oscillation frequency; a high frequency power supplying unit that serves as a power source by amplifying an oscillation signal output from the oscillating unit for supplying the high frequency power to the load; a reflected-wave information calculating unit that calculates reflected wave information on a reflected wave power, and outputs the reflected wave information; a frequency control unit that controls the oscillation frequency of the oscillating unit so as to lower the reflected wave information; an impedance adjusting unit that is disposed at a downstream of the high frequency power supplying unit in a power supplying direction, and that has at least one variable reactance element which can be controlled; and an element control unit that controls the variable reactance element of the impedance adjusting unit so as to lower the reflected wave information.

摘要翻译： 一种用于向负载提供高频电力的高频装置，所述高频装置包括：可改变振荡频率的振荡单元; 高频供电单元，通过放大从所述振荡单元输出的用于向所述负载提供高频功率的振荡信号，作为电源; 反射波信息计算单元，其计算反射波功率的反射波信息，并输出反射波信息; 频率控制单元，其控制所述振荡单元的振荡频率以降低所述反射波信息; 阻抗调整单元，其设置在所述高频供电单元的供电方向的下游，并且具有可控制的至少一个可变电抗元件; 以及元件控制单元，其控制阻抗调节单元的可变电抗元件，以便降低反射波信息。

公开(公告)号：US20050069128A1

公开(公告)日：2005-03-31

申请号：US10966173

申请日：2004-09-29

申请人： Takeshi Inoue ,  Hiroshi Matoba ,  Ryohei Tanaka ,  Toyokazu Kitano

发明人： Takeshi Inoue ,  Hiroshi Matoba ,  Ryohei Tanaka ,  Toyokazu Kitano

IPC分类号： G06F7/00 ,  G06F21/00 ,  H01L21/82 ,  H03K19/173 ,  H04L9/00

CPC分类号： G06F21/34 ,  G06F21/10 ,  H04L9/00 ,  H04L2209/56

摘要： Configuration-wiring information is generated by a function-restricted netlist. A data-writing device writes the generated information to FPGAs. The restriction-lifting section lifts the restriction of the restricted configuration-wiring data. Then, a bit stream is generated based on the configuration-wiring data. The bit stream is encrypted in the encryption section and then decrypted in the decryption section. The decrypted data is written to the FPGA by the data writing section. A dongle stores permitted writing count information contracted with an IP vendor. A remaining writing count is calculated based on the writing count information every time the writing to the FPGA is performed. When the remaining writing count becomes zero, the functional restriction lifting and the decryption are prohibited, so that IP netlist cannot be written to the FPGA.

摘要翻译： 配置接线信息由功能受限制的网表生成。 数据写入设备将生成的信息写入FPGA。 限制提升部分提升了限制配置接线数据的限制。 然后，基于配置布线数据生成位流。 比特流在加密部分被加密，然后在解密部分解密。 解密的数据由数据写入部分写入FPGA。 加密狗商店允许与IP供应商签订的书面计数信息。 每次执行对FPGA的写入时，基于写入计数信息计算剩余写入计数。 当剩余写入次数为零时，禁止功能限制提升和解密，因此IP网表不能写入FPGA。

公开(公告)号：US5141974A

公开(公告)日：1992-08-25

申请号：US537398

申请日：1990-06-13

申请人： Isako Konishi ,  Yasuyuki Murata ,  Ryohei Tanaka ,  Yoshinori Nakanishi

发明人： Isako Konishi ,  Yasuyuki Murata ,  Ryohei Tanaka ,  Yoshinori Nakanishi

IPC分类号： H01L23/29 ,  C08G59/14 ,  C08G59/20 ,  C08G59/24 ,  C08L63/00 ,  C08L63/02 ,  H01B3/40 ,  H01L23/31

CPC分类号： H01B3/40 ,  C08G59/245 ,  C08L63/00

摘要： A composition is disclosed which comprises the reaction product of a diglycidyl ether of a 4,4'-dihydroxybiphenyl and a polyhydric phenol having an average of 2.3 to 10 hydroxyl groups per molecule. The described epoxy resin is particularly useful in phenolic-cured electrical encapsulation formulations.

摘要翻译： 公开了一种组合物，其包含4,4'-二羟基联苯的二缩水甘油醚与每分子平均具有2.3至10个羟基的多元酚的反应产物。 所描述的环氧树脂在酚醛固化的电气封装配方中特别有用。

公开(公告)号：US5141704A

公开(公告)日：1992-08-25

申请号：US737909

申请日：1991-07-26

申请人： Tatsuo Kondo ,  Hajime Nakajima ,  Masami Shindo ,  Hirokazu Tsuji ,  Ryohei Tanaka ,  Susumu Isobe ,  Sadao Ohta ,  Rikizo Watanabe

发明人： Tatsuo Kondo ,  Hajime Nakajima ,  Masami Shindo ,  Hirokazu Tsuji ,  Ryohei Tanaka ,  Susumu Isobe ,  Sadao Ohta ,  Rikizo Watanabe

IPC分类号： C22C19/05

CPC分类号： C22C19/055 ,  C22C19/056

摘要： The improved superalloy that possesses all the characteristics required of the high-temperature structural material of high-temperature gas-cooled reactors (i.e., high-temperature strength, corrosion resistance, good productibility, good hot workability and resistance to embrittlement due to thermal aging) consists essentially of 16-28% Cr. 15-24% W (provided that Cr+W=39-44%), 0.01-0.1% Zr, 0.001-0.015% Y, 0.0005-0.01% B, up to 0.05% C, up to 0.1% Si, up to 0.1% Mn (provided that Si+Mn.gtoreq.0.1%), up to 0.1% Ti, up to 0.1% Al and up to 0.1% Nb (provided that Ti+Al.gtoreq.0.1% and Ti+Al+Nb.gtoreq.0.15%), with the balance being Ni and inevitable impurities and all percentages being on a weight basis.

摘要翻译： 具有高温气冷反应堆的高温结构材料所需要的全部特性的改进的超合金（即，高温强度，耐腐蚀性，良好的生产能力，良好的热加工性和耐热老化的脆化性） 基本上由16-28％的Cr组成。 15-24％W（Cr + W = 39-44％），0.01-0.1％Zr，0.001-0.015％Y，0.0005-0.01％B，至多0.05％C，至多0.1％Si，直至 0.1％的Mn（Si + Mn> / = 0.1％），Ti：0.1％，Al：0.1％，Nb：0.1％以下（Ti + Al> / = 0.1％，Ti + Al + Nb > = 0.15％），余量为Ni和不可避免的杂质，所有百分数均以重量计。