公开(公告)号：US06626994B1

公开(公告)日：2003-09-30

申请号：US09890007

申请日：2001-07-24

申请人： Akihiro Kimura ,  Hideki Sato ,  Ryuji Kono ,  Masahiro Kato ,  Masaro Tamatsuka

发明人： Akihiro Kimura ,  Hideki Sato ,  Ryuji Kono ,  Masahiro Kato ,  Masaro Tamatsuka

IPC分类号： C30B2500

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  H01L21/02381 ,  H01L21/02532

摘要： There are provided a silicon wafer for epitaxial growth wherein a void type defect is not exposed on the surface where an epitaxial layer is grown, and a method for producing an epitaxial wafer comprising measuring the number of the void type defects exposed on the surface of a silicon wafer and/or the number of the void type defects which exist in the part to the depth of at least 10 nm from the surface of the silicon wafer, choosing the silicon wafer wherein the number of these void type defects is smaller than the predetermined value, and growing an epitaxial layer on the surface of the chosen silicon wafer. Thereby, there can be provided a silicon wafer for epitaxial growth wherein generation of SF is reduced and epitaxial wafer, and a method for producing it.

摘要翻译： 提供了一种用于外延生长的硅晶片，其中空隙型缺陷不暴露在外延层生长的表面上，以及一种用于制造外延晶片的方法，包括测量暴露在外表面上的空穴型缺陷的数量 硅晶片和/或从硅晶片表面到深度至少为10nm的部分中存在的空隙型缺陷的数量，选择硅晶片，其中这些空隙型缺陷的数量小于预定的 值，并且在所选硅晶片的表面上生长外延层。 因此，可以提供一种用于外延生长的硅晶片，其中SF的产生被减少，并且外延晶片及其制造方法。

公开(公告)号：US06599603B1

公开(公告)日：2003-07-29

申请号：US09673955

申请日：2000-10-24

申请人： Masahiro Kato ,  Masaro Tamatsuka ,  Osamu Imai ,  Akihiro Kimura ,  Tomosuke Yoshida

发明人： Masahiro Kato ,  Masaro Tamatsuka ,  Osamu Imai ,  Akihiro Kimura ,  Tomosuke Yoshida

IPC分类号： C30B2906

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225 ,  Y10T428/21

摘要： The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer includes void defects inside the wafer, a maximum value of a ratio between long side length L1 and short side length L2 (L1/L2) in an optional rectangle circumscribed the void defect image projected on an optional {110} plane is 2.5 or more, and the silicon wafer including rod-like void defects and/or plate-like void defects inside the wafer, wherein a void defect density of the silicon wafer at a depth of from the wafer surface to at least 0.5 &mgr;m after the heat treatment is ½ or less than that of inside the wafer. According to this, the silicon wafer, which is suitable for expanding reducing effect of void defects by heat treatment up to a deeper region, can be obtained.

摘要翻译： 本发明提供了一种CZ硅晶片，其中晶片在其内部包括棒状空隙缺陷和/或板状空隙缺陷，以及CZ硅晶片，其中硅晶片包括晶片内的空隙，其最大值 在可选择的{110}平面上投影的空隙缺陷图像的任意矩形中的长边长L1和短边长L2之间的比率（L1 / L2）为2.5以上，硅晶片包括棒状空隙， /或晶片内的板状空隙缺陷，其中在晶片表面的深度处的硅晶片的空隙缺陷密度在热处理之后至少为0.5微米的半孔缺陷密度为晶片内部的1/2以下。 据此，可以获得适合于通过热处理直到更深的区域来减少空隙缺陷的效果的硅晶片。

公开(公告)号：US06299982B1

公开(公告)日：2001-10-09

申请号：US09313856

申请日：1999-05-18

申请人： Masaro Tamatsuka ,  Akihiro Kimura ,  Katsuhiko Miki ,  Makoto Iida

发明人： Masaro Tamatsuka ,  Akihiro Kimura ,  Katsuhiko Miki ,  Makoto Iida

IPC分类号： C03B1529

CPC分类号： C30B29/06 ,  C30B15/206 ,  C30B33/00

摘要： There is disclosed a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, wherein a size of grown-in defects in the silicon single crystal wafer is 70 nm or less, a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, the silicon single crystal ingot is grown with controlling a rate of cooling from 1150 to 1080° C. to be 2.3° C./min or more, and a method for producing a silicon single crystal wafer wherein a silicon single crystal ingot is grown with doping nitrogen and controlling a rate of cooling from 1150 to 1080° C. to be 2.3° C./min or more, and is then processed to provide a silicon single crystal wafer. The silicon single crystal wafer for device wherein growth of the crystal defects is suppressed can be produced by CZ method in high productivity.

摘要翻译： 公开了通过用掺杂氮处理通过Czochralski法生长的硅单晶锭制造的硅单晶晶片，其中硅单晶晶片中的长期缺陷的尺寸为70nm以下，制造的硅单晶晶片 通过处理通过掺杂氮气的切克劳斯基法生长的硅单晶锭，生长硅单晶锭，控制冷却速率为1150℃至1080℃，为2.3℃/分钟以上， 制造硅单晶晶片，其中使用掺杂氮气生长硅单晶锭，并将冷却速率控制在1150至1080℃至2.3℃/分钟以上，然后进行处理以提供硅单晶 晶圆。 可以通过CZ法以高生产率制造晶体缺陷生长被抑制的器件用硅单晶晶片。

公开(公告)号：US09045033B2

公开(公告)日：2015-06-02

申请号：US13319897

申请日：2009-05-13

申请人： Gohki Kinoshita ,  Koichiro Muta ,  Masaya Yamamoto ,  Eiji Fukushiro ,  Shunsuke Oyama ,  Toshiya Hashimoto ,  Takanori Aoki ,  Akihiro Kimura

发明人： Gohki Kinoshita ,  Koichiro Muta ,  Masaya Yamamoto ,  Eiji Fukushiro ,  Shunsuke Oyama ,  Toshiya Hashimoto ,  Takanori Aoki ,  Akihiro Kimura

IPC分类号： B60L11/00 ,  B60K6/445 ,  B60K6/365 ,  B60L11/18 ,  B60W10/06 ,  B60W10/08 ,  B60W10/26 ,  B60W30/02 ,  B60W30/20 ,  B60K1/02 ,  B60W20/00

CPC分类号： B60W30/20 ,  B60K1/02 ,  B60K6/365 ,  B60K6/445 ,  B60L11/1851 ,  B60L2240/647 ,  B60W10/06 ,  B60W10/08 ,  B60W10/26 ,  B60W20/00 ,  B60W30/025 ,  B60W2422/40 ,  B60W2510/22 ,  B60W2510/244 ,  B60W2510/246 ,  B60W2550/147 ,  Y02T10/6239 ,  Y02T10/6286 ,  Y02T10/7005 ,  Y02T10/705 ,  Y02T10/7258 ,  Y02T10/7291 ,  Y02T90/16

摘要： A sprung vibration damping for suppressing sprung vibration which is generated to a vehicle by an input from a road surface to wheels provided with the vehicle by controlling a torque of a motor, and the sprung vibration damping is subjected to a restriction including a prohibition in response to a state of battery, which supplies power to the motor, such as a voltage and a temperature of the battery or a state of a control, which affects the power of the battery, such as a charge/discharge amount feedback control and the like.

摘要翻译： 一种用于通过控制电动机的转矩来抑制由路面输入到车辆的车辆对车辆产生的弹簧振动的弹簧振动阻尼，并且弹簧振动阻尼受到包括禁止响应的限制 向电动机供电，例如电池的电压和温度，或影响电池功率的控制状态（例如充电/放电量反馈控制等）的电动机的状态 。

公开(公告)号：US08967867B2

公开(公告)日：2015-03-03

申请号：US13477772

申请日：2012-05-22

申请人： Akihiro Kimura ,  Teiichi Hirono ,  Ryota Ogino ,  Kyoko Horise ,  Hiroyoshi Teshima ,  Masashi Hirayama

发明人： Akihiro Kimura ,  Teiichi Hirono ,  Ryota Ogino ,  Kyoko Horise ,  Hiroyoshi Teshima ,  Masashi Hirayama

IPC分类号： F16C32/06 ,  F04D25/06 ,  H02K5/167 ,  H02K7/08 ,  F04D29/051 ,  F16C33/74 ,  F16C17/10

CPC分类号： F04D25/0626 ,  F04D25/062 ,  F04D29/051 ,  F04D29/0513 ,  F16C17/107 ,  F16C33/745 ,  H02K5/1675 ,  H02K7/085

摘要： A first seal portion having a surface of a lubricating oil defined therein is defined between a sleeve portion and a bearing housing. A side communicating channel arranged to bring a first seal gap and a thrust gap into communication with each other is defined either between a sleeve portion and a bearing housing or in an outer circumferential portion of a sleeve portion. A second seal portion having another surface of a lubricating oil defined therein is defined in a gap constituted by a side minute gap between a thrust plate and a bearing housing and a lower minute gap between a thrust plate and a cap member.

摘要翻译： 限定在其中的具有润滑油的表面的第一密封部分限定在套筒部分和轴承壳体之间。 布置成使第一密封间隙和推力间隙彼此连通的侧面连通通道被限定在套筒部分和轴承壳体之间或套筒部分的外圆周部分中。 限定在其中的具有润滑油的另一表面的第二密封部分被限定在由推力板和轴承壳体之间的侧面微小间隙和推力板和盖构件之间的较小微小间隙构成的间隙中。

公开(公告)号：US08954248B2

公开(公告)日：2015-02-10

申请号：US14164346

申请日：2014-01-27

申请人： Shunya Kato ,  Akihiro Kimura ,  Yuma Mori ,  Hideki Furuta

发明人： Shunya Kato ,  Akihiro Kimura ,  Yuma Mori ,  Hideki Furuta

IPC分类号： G06F19/00 ,  B60W10/12 ,  B60W10/04

CPC分类号： B60W10/12 ,  B60K6/445 ,  B60K6/547 ,  B60W10/04 ,  B60W10/06 ,  B60W10/115 ,  B60W30/19 ,  B60W2510/0638 ,  B60W2510/0695 ,  Y02T10/6239 ,  Y10T477/606

摘要： A control apparatus for a vehicle including a differential section having a first rotating element coupled to a prime mover and a second rotating element connected to drive wheels via an engaging and disengaging apparatus, including: a controller configured to control connection of the engaging and disengaging apparatus, the controller being configured to adjust a power of the prime mover, the controller being configured to reduce the power of the prime mover when performing connection of the engaging and disengaging apparatus, and the controller being configured to reduce more power of the prime mover as a speed of rotation of the first rotating element is lower.

摘要翻译： 一种用于车辆的控制装置，包括具有联接到原动机的第一旋转元件和经由接合和分离装置连接到驱动轮的第二旋转元件的差速部分，包括：控制器，被配置为控制接合和分离装置的连接 所述控制器被配置为调节所述原动机的功率，所述控制器被配置为在执行所述接合和分离设备的连接时减小所述原动机的功率，并且所述控制器被配置为将所述原动机的更多功率降低为 第一旋转元件的旋转速度较低。

公开(公告)号：US08932178B2

公开(公告)日：2015-01-13

申请号：US14134706

申请日：2013-12-19

申请人： Shunya Kato ,  Akihiro Kimura ,  Yuma Mori ,  Hideki Furuta

发明人： Shunya Kato ,  Akihiro Kimura ,  Yuma Mori ,  Hideki Furuta

IPC分类号： B60K1/02 ,  B60W10/04 ,  B60W10/12 ,  B60W10/06 ,  B60W20/00 ,  B60W10/115 ,  B60W30/19

CPC分类号： B60W10/12 ,  B60W10/06 ,  B60W10/115 ,  B60W20/15 ,  B60W20/30 ,  B60W30/19 ,  Y10T477/23 ,  Y10T477/606 ,  Y10T477/675

摘要： A vehicle includes a transmission between an engine and a drive wheel and includes a differential mechanism (planetary gear mechanism) between the engine and an engagement device (transmission). A controller (ECU) included in the vehicle calculates a variation rate in the whole rotation energy of the planetary gear mechanism when it is in the inertia phase of a shift. The ECU increasingly corrects an engine generated power and decreasingly corrects a transmission transfer power when the variation rate is higher than 0. The ECU decreasingly corrects the engine generated power and increasingly correct the transmission transfer power when the variation rate is lower than 0.

摘要翻译： 车辆包括在发动机和驱动轮之间的变速器，并且包括在发动机和接合装置（变速器）之间的差速机构（行星齿轮机构）。 包括在车辆中的控制器（ECU）当处于换档的惯性阶段时，计算行星齿轮机构的整个旋转能量的变化率。 ECU越来越多地校正发动机发电量，并且当变化率高于0时，逐渐校正传动传递功率。当减小发动机发电功率并在变化率低于0时越来越多地校正传输传递功率。

公开(公告)号：US08794839B2

公开(公告)日：2014-08-05

申请号：US13602348

申请日：2012-09-04

申请人： Akihiro Kimura ,  Teiichi Hirono ,  Kunio Sakurada ,  Kyoko Horise ,  Takehito Tamaoka ,  Kazuhiro Sato ,  Yoichi Sekii

发明人： Akihiro Kimura ,  Teiichi Hirono ,  Kunio Sakurada ,  Kyoko Horise ,  Takehito Tamaoka ,  Kazuhiro Sato ,  Yoichi Sekii

IPC分类号： F16C32/06

CPC分类号： F16C17/107 ,  F16C33/107 ,  F16C33/745 ,  F16C2370/12 ,  G11B19/2036 ,  H02K5/1677

摘要： A bearing apparatus includes a stationary shaft, a first annular member, and a rotating member. The rotating member includes a first inner circumferential surface arranged opposite to the outer circumferential surface of the stationary shaft, and a second inner circumferential surface arranged opposite to an outer circumferential surface of the first annular member. A lubricating oil is arranged in a gap between a surface of a stationary member and the rotating member. On an upper side of an upper surface of the lubricating oil, the first annular member and the rotating member are arranged radially opposite to each other with a slight gap defined therebetween, so that a labyrinth seal is defined. The labyrinth seal and a fixing range over which the stationary shaft and the first annular member are fixed to each other are arranged to overlap with each other in a radial direction.

摘要翻译： 轴承装置包括固定轴，第一环形构件和旋转构件。 旋转构件包括与固定轴的外周面相对配置的第一内周面和与第一环状构件的外周面相对设置的第二内周面。 润滑油布置在固定件的表面和旋转件之间的间隙中。 在润滑油的上表面的上侧，第一环形构件和旋转构件彼此径向相对设置，在其间限定了微小的间隙，从而限定了迷宫式密封。 迷宫式密封件和固定轴和第一环形构件彼此固定的固定范围被布置成在径向方向上彼此重叠。

公开(公告)号：US08733725B2

公开(公告)日：2014-05-27

申请号：US13114095

申请日：2011-05-24

申请人： Akihiro Kimura ,  Tomohiro Enokijima

发明人： Akihiro Kimura ,  Tomohiro Enokijima

IPC分类号： F16M13/00

CPC分类号： B60N2/067 ,  B60N2/0232 ,  B60N2/0705 ,  F16F15/08

摘要： A power slider includes a lower rail and an upper rail which are engaged with each other so as to be mutually slidable along each other, a screw rod which is rotatably supported on one of the lower rail and the upper rail, a feed nut which is supported on the other of the lower rail and the upper rail and is screw-engaged with the screw rod, and a gearbox which is supported on the one of the lower rail and the upper rail via a holder and which rotatably drives the screw rod. The gearbox is provided with a mounting bolt through-hole and is supported by the holder via a mounting bolt that is inserted through the mounting bolt through-hole. A resilient member is positioned in a space defined between the mounting bolt through-hole of the gearbox and the mounting bolt.

摘要翻译： 电动滑块包括彼此接合以便彼此相互滑动的下轨道和上轨道，可旋转地支撑在下轨道和上轨道之一上的螺杆，进给螺母，其是 支撑在下轨道和上轨道中的另一个上，并且与螺杆螺纹接合;以及齿轮箱，其经由保持器支撑在下轨道和上轨道中的一个上，并且可旋转地驱动螺杆。 齿轮箱设有安装螺栓通孔，并通过安装螺栓通过安装螺栓通孔插入支架。 弹性构件定位在齿轮箱的安装螺栓通孔和安装螺栓之间的空间中。

公开(公告)号：US20140021627A1

公开(公告)日：2014-01-23

申请号：US14009993

申请日：2012-04-02

申请人： Akihiro Kimura ,  Takeshi Sunaga

发明人： Akihiro Kimura ,  Takeshi Sunaga

IPC分类号： H01L23/00

CPC分类号： H01L24/81 ,  H01L21/52 ,  H01L21/56 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/16 ,  H01L24/45 ,  H01L24/49 ,  H01L24/71 ,  H01L24/90 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/11005 ,  H01L2224/1146 ,  H01L2224/16104 ,  H01L2224/16221 ,  H01L2224/16225 ,  H01L2224/16501 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2924/15174 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

摘要翻译： 半导体器件设置有具有多个电极的半导体元件，与多个电极电连接的多个端子和覆盖该半导体元件的密封树脂。 密封树脂覆盖多个端子，使得半导体元件的厚度方向的底面露出。 作为多个端子之一的第一端子被设置在与从厚度方向观察时与多个电极中的一个电极重叠的位置。 半导体器件设置有与第一端子和第一电极接触的导电连接构件。