公开(公告)号：US09133550B2

公开(公告)日：2015-09-15

申请号：US13433013

申请日：2012-03-28

申请人： In-Bae Kim ,  Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Jae-Woo Jeong ,  Sang Gab Kim ,  Sang-Woo Kim ,  Ki-Beom Lee ,  Dae-Woo Lee ,  Sam-Young Cho

发明人： In-Bae Kim ,  Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Jae-Woo Jeong ,  Sang Gab Kim ,  Sang-Woo Kim ,  Ki-Beom Lee ,  Dae-Woo Lee ,  Sam-Young Cho

IPC分类号： C09K13/00 ,  C23F1/18 ,  C23F1/26 ,  H01L21/3213 ,  C09K13/08 ,  H01L27/12

CPC分类号： C23F1/18 ,  C09K13/08 ,  C23F1/26 ,  H01L21/32134 ,  H01L27/124

摘要： An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate.

摘要翻译： 公开了一种蚀刻组合物，使用该蚀刻组合物形成金属图案的方法以及一种制造显示衬底的方法。 蚀刻组合物包含约0.1重量％至约25重量％的过硫酸铵，约0.1重量％至约25重量％的有机酸，约0.01重量％至约5重量％的螯合剂 ，约0.01重量％至约5重量％的氟化物，约0.01重量％至约5重量％的氯化物化合物，约0.01重量％至约2重量％的唑类化合物 和余下的水。 因此，可以稳定地蚀刻铜层以提高制造金属图案和显示基板的可靠性。

公开(公告)号：US08946004B2

公开(公告)日：2015-02-03

申请号：US12544144

申请日：2009-08-19

申请人： Joo-Han Kim ,  Ki-Yong Song ,  Dong-Ju Yang ,  Hee-Joon Kim ,  Yeo-Geon Yoon ,  Sung-Hen Cho ,  Chang-Hoon Kim ,  Jae-Hong Kim ,  Yu-Gwang Jeong ,  Ki-Yeup Lee ,  Sang-Gab Kim ,  Yun-Jong Yeo ,  Shin-Il Choi ,  Ji-Young Park

发明人： Joo-Han Kim ,  Ki-Yong Song ,  Dong-Ju Yang ,  Hee-Joon Kim ,  Yeo-Geon Yoon ,  Sung-Hen Cho ,  Chang-Hoon Kim ,  Jae-Hong Kim ,  Yu-Gwang Jeong ,  Ki-Yeup Lee ,  Sang-Gab Kim ,  Yun-Jong Yeo ,  Shin-Il Choi ,  Ji-Young Park

IPC分类号： H01L29/786 ,  H01L27/12 ,  G02F1/1362

CPC分类号： H01L24/05 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L2224/04042 ,  H01L2924/14 ,  H01L2924/1426 ,  H01L2924/00

摘要： A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.

摘要翻译： 公开了布线的接触部分及其制造方法。 根据实施例的布线的接触部分包括：基板; 设置在所述基板上的导电层; 设置在所述导电层上并具有接触孔的层间绝缘层; 设置在所述导电层上并填充所述接触孔的金属层; 以及透明电极，设置在所述层间绝缘层上并连接到所述金属层，其中所述层间绝缘层包括下绝缘层和设置在所述下绝缘层上的上绝缘层，所述下绝缘层在所述接触孔处被底切， 并且金属层填充在下绝缘层被切下的部分。

公开(公告)号：US08643012B2

公开(公告)日：2014-02-04

申请号：US12952744

申请日：2010-11-23

申请人： Min-Seok Oh ,  Bong-Kyu Shin ,  Sang-Gab Kim ,  Eun-Guk Lee ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Seung-Ha Choi

发明人： Min-Seok Oh ,  Bong-Kyu Shin ,  Sang-Gab Kim ,  Eun-Guk Lee ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Seung-Ha Choi

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F1/13439 ,  G02F2201/50

摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask, Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.

摘要翻译： 形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案 使用光致抗蚀剂图案作为掩模蚀刻钝化层，对光致抗蚀剂图案的表面进行不均匀的表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。 形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。

公开(公告)号：US20120318769A1

公开(公告)日：2012-12-20

申请号：US13406388

申请日：2012-02-27

申请人： Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Sang-Gab Kim ,  In-Bae Kim ,  Jae-Woo Jeong

发明人： Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Sang-Gab Kim ,  In-Bae Kim ,  Jae-Woo Jeong

IPC分类号： C23F1/00 ,  H01B13/00

CPC分类号： C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 Å and about 5,500 Å on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved.

摘要翻译： 在显示基板上形成金属图案的方法包括：在基底基板上铺设厚度在约至约为500埃之间的铜基层，并在铜基层上形成图案化的光致抗蚀剂层。 通过含有氧化调节剂的蚀刻组合物对铜基层进行过蚀刻，其中过蚀刻因子在约40％至约200％之间，同时使用图案化的光致抗蚀剂层作为蚀刻停止层，并且其中蚀刻组合物 包括约0.1重量％至约50重量％的过硫酸铵，包括约0.01重量％至约5重量％的唑类化合物和剩余的水。 因此，可以提高金属图案的可靠性和制造显示基板的可靠性。

公开(公告)号：US08273612B2

公开(公告)日：2012-09-25

申请号：US12981287

申请日：2010-12-29

申请人： Min-Seok Oh ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Byeong-Beom Kim ,  Seung-Ha Choi ,  Sang-Gab Kim ,  Chang-Ho Jeong ,  Shin-Il Choi ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Dong-Ju Yang

发明人： Min-Seok Oh ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Byeong-Beom Kim ,  Seung-Ha Choi ,  Sang-Gab Kim ,  Chang-Ho Jeong ,  Shin-Il Choi ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Dong-Ju Yang

IPC分类号： H01L21/84

CPC分类号： H01L27/12 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458

摘要： In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.

摘要翻译： 在显示面板和制造显示面板的方法中，在构成显示面板的基板上形成包括与数据线相同材料的栅极线，数据线以及源极和漏极，并且数据线包括 铝基合金含有足够的镍以在干蚀刻期间抑制腐蚀。 含有AlNi的合金的耐腐蚀性有助于防止在形成这些线和电极的选择性干蚀刻期间数据线，源电极和漏电极的腐蚀。

公开(公告)号：US20120208310A1

公开(公告)日：2012-08-16

申请号：US13330657

申请日：2011-12-19

申请人： Seon-Il KIM ,  Shin-Il Choi ,  Ji-Young Park ,  Sang-Gab Kim ,  O-Byoung Kwon ,  Dong-Ki Kim ,  Sang-Tae Kim ,  Young-Chul Park ,  In-Ho Yu ,  Young-Jin Yoon ,  Suck-Jun Lee ,  Joon-Woo Lee ,  Min-Ki Lim ,  Sang-Hoon Jang ,  Young-Jun JIN

发明人： Seon-Il KIM ,  Shin-Il Choi ,  Ji-Young Park ,  Sang-Gab Kim ,  O-Byoung Kwon ,  Dong-Ki Kim ,  Sang-Tae Kim ,  Young-Chul Park ,  In-Ho Yu ,  Young-Jin Yoon ,  Suck-Jun Lee ,  Joon-Woo Lee ,  Min-Ki Lim ,  Sang-Hoon Jang ,  Young-Jun JIN

IPC分类号： H01L33/08

CPC分类号： H01L51/0023 ,  H01L2251/308

摘要： Exemplary embodiments of the present invention disclose a non-halogenated etchant for etching an indium oxide layer and a method of manufacturing a display substrate using the non-halogenated etchant, the non-halogenated etchant including nitric acid, sulfuric acid, a corrosion inhibitor including ammonium, a cyclic amine-based compound, and water.

摘要翻译： 本发明的示例性实施方案公开了用于蚀刻氧化铟层的非卤化蚀刻剂和使用非卤化蚀刻剂制造显示衬底的方法，非卤化蚀刻剂包括硝酸，硫酸，包括铵的腐蚀抑制剂 ，环胺类化合物和水。

公开(公告)号：US20120003768A1

公开(公告)日：2012-01-05

申请号：US13231225

申请日：2011-09-13

申请人： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

发明人： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

IPC分类号： H01L33/16

CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288

摘要： A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

摘要翻译： 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

公开(公告)号：US08067774B2

公开(公告)日：2011-11-29

申请号：US12434942

申请日：2009-05-04

申请人： Seung-Ha Choi ,  Ki-Yeup Lee ,  Sang-Gab Kim ,  Shin-il Choi ,  Dong-Ju Yang ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Ji-Young Park ,  Dong-Hoon Lee ,  Byeong-Beom Kim

发明人： Seung-Ha Choi ,  Ki-Yeup Lee ,  Sang-Gab Kim ,  Shin-il Choi ,  Dong-Ju Yang ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Ji-Young Park ,  Dong-Hoon Lee ,  Byeong-Beom Kim

IPC分类号： H01L27/14

CPC分类号： H01L29/458 ,  H01L27/124 ,  H01L29/4908

摘要： After forming a signal line including aluminum, an upper layer of an oxide layer including aluminum that covers the signal line is formed in the same chamber and by using the same sputtering target as the signal line, or a buffer layer of an oxide layer including aluminum is formed in a contact hole exposing the signal line during the formation of the contact hole. Accordingly, the contact characteristic between an upper layer including indium tin oxide (“ITO”) or indium zinc oxide (“IZO”) and the signal line may be improved to enhance the adhesion therebetween while not increasing the production cost of the thin film transistor (“TFT”) array panel.

摘要翻译： 在形成包括铝的信号线之后，在相同的室中形成包含覆盖信号线的铝的氧化物层的上层，并且通过使用与信号线相同的溅射靶，或者包括铝的氧化物层的缓冲层 形成在接触孔形成期间暴露信号线的接触孔中。 因此，可以改善包括氧化铟锡（“ITO”）或氧化铟锌（“IZO”）的上层与信号线之间的接触特性，以增强其之间的粘附，同时不增加薄膜晶体管的生产成本 （“TFT”）阵列面板。

公开(公告)号：US08054428B2

公开(公告)日：2011-11-08

申请号：US12329356

申请日：2008-12-05

申请人： Jang-Kun Song ,  Sang-Gab Kim ,  Seung-Hee Lee

发明人： Jang-Kun Song ,  Sang-Gab Kim ,  Seung-Hee Lee

IPC分类号： G02F1/1337 ,  G02F1/136

CPC分类号： G02F1/136227 ,  G02F1/133371 ,  G02F1/133514

摘要： The present invention relates to a liquid crystal display and a fabricating method thereof. The cell gaps for the red, green and blue pixel areas are formed in a separate manner for correcting the color shift to enhance image quality. Openings for controlling the cell gaps are provided in the protective layer and the gate insulating layer and have a zigzag-shaped boundary. In this way, the light leakage near the boundary of the openings can be prevented.

摘要翻译： 本发明涉及一种液晶显示器及其制造方法。 红色，绿色和蓝色像素区域的单元格间隙以单独的方式形成，用于校正色彩偏移以增强图像质量。 用于控制电池间隙的开口设置在保护层和栅极绝缘层中并且具有锯齿形边界。 以这种方式，可以防止在开口边界附近的漏光。

公开(公告)号：US08044405B2

公开(公告)日：2011-10-25

申请号：US12429388

申请日：2009-04-24

申请人： Hong-Kee Chin ,  Sang-Gab Kim ,  Woong-Kwon Kim ,  Yong-Mo Choi ,  Seung-Ha Choi ,  Shin-Il Choi ,  Ho-Jun Lee ,  Jung-Suk Bang ,  Yu-Gwang Jeong

发明人： Hong-Kee Chin ,  Sang-Gab Kim ,  Woong-Kwon Kim ,  Yong-Mo Choi ,  Seung-Ha Choi ,  Shin-Il Choi ,  Ho-Jun Lee ,  Jung-Suk Bang ,  Yu-Gwang Jeong

IPC分类号： H01L29/12 ,  H01L21/336

CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288

摘要： A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

摘要翻译： 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。