公开(公告)号：US09117627B2

公开(公告)日：2015-08-25

申请号：US14468787

申请日：2014-08-26

申请人： SEN Corporation

发明人： Kazuhisa Manabe ,  Takanori Yagita

IPC分类号： H01J37/00 ,  H01J37/24 ,  H01L21/265 ,  H01J37/317

CPC分类号： H01J37/243 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/265

摘要： An ion implantation apparatus includes an implantation processing chamber, a high voltage unit, and a high-voltage power supply system. In the implantation processing chamber ions are implanted into a workpiece. The high voltage unit includes an ion source unit for generating the ions, and a beam transport unit provided between the ion source unit and the implantation processing chamber. The high-voltage power supply system applies a potential to the high voltage unit under any one of a plurality of energy settings. The high-voltage power supply system includes a plurality of current paths formed such that a beam current flowing into the workpiece is returned to the ion source unit, and each of the plurality of energy settings is associated with a corresponding one of the plurality of current paths.

摘要翻译： 离子注入装置包括注入处理室，高压单元和高压电源系统。 在植入处理室中将离子注入工件中。 高电压单元包括用于产生离子的离子源单元和设置在离子源单元和注入处理室之间的束输送单元。 高压电源系统在多个能量设定中的任意一个下向高压单元施加电位。 高电压电源系统包括多个电流路径，其形成为流入工件的射束电流返回到离子源单元，并且多个能量设置中的每一个与多个电流中的相应一个电流相关联 路径。

公开(公告)号：US20150064888A1

公开(公告)日：2015-03-05

申请号：US14468844

申请日：2014-08-26

申请人： SEN Corporation

发明人： Takanori Yagita ,  Mitsuaki Kabasawa ,  Haruka Sasaki

IPC分类号： H01J37/24 ,  H01J37/10 ,  H01L21/265 ,  H01J37/317

CPC分类号： H01J37/243 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/10 ,  H01J2237/30472

摘要： An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens.

摘要翻译： 离子注入装置包括光束并联单元和第三电源单元。 光束并行化单元包括加速透镜和在离子束输送方向上与加速透镜相邻设置的减速透镜。 第三电源单元在多个能量设置之一下操作光束并联单元。 多个能量设置包括适于运输低能量离子的第一能量设定和适于运输高能离子束的第二能量设定。 第三电源单元被配置为在第二能量设定下至少在加速透镜中产生电位差，并且在第一能量设定下产生至少减速透镜的电位差。 减速透镜的曲率小于加速度透镜的曲率。

公开(公告)号：US20150064887A1

公开(公告)日：2015-03-05

申请号：US14468787

申请日：2014-08-26

申请人： SEN Corporation

发明人： Kazuhisa Manabe ,  Takanori Yagita

IPC分类号： H01J37/24 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/243 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/265

摘要： An ion implantation apparatus includes an implantation processing chamber, a high voltage unit, and a high-voltage power supply system. In the implantation processing chamber ions are implanted into a workpiece. The high voltage unit includes an ion source unit for generating the ions, and a beam transport unit provided between the ion source unit and the implantation processing chamber. The high-voltage power supply system applies a potential to the high voltage unit under any one of a plurality of energy settings. The high-voltage power supply system includes a plurality of current paths formed such that a beam current flowing into the workpiece is returned to the ion source unit, and each of the plurality of energy settings is associated with a corresponding one of the plurality of current paths.

摘要翻译： 离子注入装置包括注入处理室，高压单元和高压电源系统。 在植入处理室中将离子注入工件中。 高电压单元包括用于产生离子的离子源单元和设置在离子源单元和注入处理室之间的束输送单元。 高压电源系统在多个能量设定中的任意一个下向高压单元施加电位。 高电压电源系统包括多个电流路径，其形成为流入工件的射束电流返回到离子源单元，并且多个能量设置中的每一个与多个电流中的相应一个电流相关联 路径。

公开(公告)号：US20150279612A1

公开(公告)日：2015-10-01

申请号：US14670173

申请日：2015-03-26

申请人： SEN Corporation

发明人： Takanori Yagita

IPC分类号： H01J37/147 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01J37/147 ,  H01J37/05 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/057

摘要： A final energy filter includes a first adjustment electrode portion, an intermediate electrode portion, and a second adjustment electrode portion. The final energy filter further includes a power supply unit. The power supply unit is configured such that it applies the voltages separately to the first adjustment electrode portion, the intermediate electrode portion, and the second adjustment electrode portion. The power supply unit applies voltages to an upstream auxiliary electrode portion, a deflection electrode portion and a downstream auxiliary electrode portion, respectively, such that the energy range of ion beam in a first region between the upstream auxiliary electrode portion and the deflection electrode portion is approximately equal to that in a second region between the deflection electrode portion and the downstream auxiliary electrode portion.

摘要翻译： 最终能量过滤器包括第一调整电极部分，中间电极部分和第二调节电极部分。 最终能量过滤器还包括电源单元。 电源单元被构造成使得其分别施加电压到第一调整电极部分，中间电极部分和第二调节电极部分。 电源单元分别向上游辅助电极部分，偏转电极部分和下游辅助电极部分施加电压，使得上游辅助电极部分和偏转电极部分之间的第一区域中的离子束的能量范围为 大致等于偏转电极部分和下游辅助电极部分之间的第二区域中的位置。

公开(公告)号：US20150155129A1

公开(公告)日：2015-06-04

申请号：US14558187

申请日：2014-12-02

申请人： SEN Corporation

发明人： Takanori Yagita

IPC分类号： H01J37/21 ,  H01J37/12 ,  H01J37/317

CPC分类号： H01J37/21 ,  H01J37/12 ,  H01J37/3171 ,  H01J2237/1415 ,  H01J2237/303 ,  H01J2237/30477

摘要： A multistage quadrupole lens system in an ion implantation apparatus includes a first quadrupole lens and a third quadrupole lens. A first bore radius of the first quadrupole lens may be smaller than a third bore radius of the third quadrupole lens. The multistage quadrupole lens system may further include a second quadrupole lens placed between the first quadrupole lens and the third quadrupole lens. A second bore radius of the second quadrupole lens may take a value lying between the first bore radius of the first quadrupole lens and the third bore radius of the third quadrupole lens (i.e., an intermediate value between them).

摘要翻译： 离子注入装置中的多级四极透镜系统包括第一四极透镜和第四四极透镜。 第一四极透镜的第一孔半径可以小于第三四极透镜的第三孔半径。 多级四极透镜系统还可以包括放置在第一四极透镜和第三四极透镜之间的第二四极透镜。 第二四极透镜的第二孔半径可以取位于第一四极透镜的第一孔半径和第三四极透镜的第三孔半径之间的值（即它们之间的中间值）。

公开(公告)号：US20130256566A1

公开(公告)日：2013-10-03

申请号：US13839753

申请日：2013-03-15

申请人： SEN CORPORATION

发明人： Hiroyuki KARIYA ,  Masaki Ishikawa ,  Yoshiaki Inda ,  Takeshi Kurose ,  Takanori Yagita ,  Toshio Yumiyama

IPC分类号： H01L21/67

CPC分类号： H01J37/3171 ,  H01J37/147 ,  H01J37/304 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01L21/265 ,  H01L21/67213

摘要： A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

摘要翻译： 通过多个静止光束测量仪器和可移动或静止的光束测量装置测量离子束的垂直分布，水平分布和积分电流值。 在离子注入之前的光束电流调节阶段，控制装置同时执行将束电流调节到束电流的预设值中的至少一个，调整水平射束尺寸，以确保水平离子束的均匀性 基于静止光束测量仪器和可动或静止光束测量装置的测量值确保垂直离子注入分布的均匀性所必需的垂直光束尺寸的密度和密度和调整。

公开(公告)号：US08692216B2

公开(公告)日：2014-04-08

申请号：US13839753

申请日：2013-03-15

申请人： Sen Corporation

发明人： Hiroyuki Kariya ,  Masaki Ishikawa ,  Yoshiaki Inda ,  Takeshi Kurose ,  Takanori Yagita ,  Toshio Yumiyama

IPC分类号： H01J37/147 ,  H01L21/265 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/147 ,  H01J37/304 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01L21/265 ,  H01L21/67213

摘要： A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

摘要翻译： 通过多个静止光束测量仪器和可移动或静止的光束测量装置测量离子束的垂直分布，水平分布和积分电流值。 在离子注入之前的光束电流调节阶段，控制装置同时执行将束电流调节到束电流的预设值中的至少一个，调整水平射束尺寸，以确保水平离子束的均匀性 基于静止光束测量仪器和可动或静止光束测量装置的测量值确保垂直离子注入分布的均匀性所必需的垂直光束尺寸的密度和密度和调整。