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    OXADIAZOLE COMPOUND AND FUNGICIDE FOR AGRICULTURAL AND HORTICULTURAL USE
    1.
    发明申请
    OXADIAZOLE COMPOUND AND FUNGICIDE FOR AGRICULTURAL AND HORTICULTURAL USE 有权

    公开(公告)号：US20210403461A1

    公开(公告)日：2021-12-30

    申请号：US16625320

    申请日：2018-07-24

    申请人： Jun IWATA ,  Yuka NAKAMURA ,  Tsukiho HAYASHI ,  Shinya WATANABE ,  HIroshi SANO

    发明人： Jun IWATA ,  Yuka NAKAMURA ,  Tsukiho HAYASHI ,  Shinya WATANABE ,  HIroshi SANO

    IPC分类号： C07D413/10 ,  A01N43/82 ,  C07D413/14 ,  A01N43/90 ,  C07D471/04

    摘要： This fungicide for agricultural and horticultural use includes a compound represented by formula (I) (in the formula, X represents a halogen group, or the like; n represents any integer of 0 to 4; when n is 2 or more, X may be the same or different; L represents a single bond or a substituted or unsubstituted C1-6 alkylene group; Q is a group represented by formula (Q-1) or formula (Q-2) (in the formulae, * represents a binding site; Y1 is N or CR1; Y2 is N or CR2; Y3 is N or CR3; Y4 is N or CR4, at least two of Y1 to Y4 are not nitrogen atoms; R1, R2, R3, and R4, each independently represent a hydrogen atom, a substituted or unsubstituted C1-6 alkyl group, or the like; R represents a substituted or unsubstituted C1-6 alkyl group or the like; G represents a substituted or unsubstituted C1-6 alkylene group; T represents a substituted or unsubstituted C1-6 alkylene group; Y5 is N or CH)) or a salt thereof.

    Semiconductor device manufacturing method
    2.
    发明授权
    Semiconductor device manufacturing method 有权
    半导体器件制造方法

    公开(公告)号：US08664120B2

    公开(公告)日：2014-03-04

    申请号：US13593063

    申请日：2012-08-23

    申请人： Shinya Watanabe

    发明人： Shinya Watanabe

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3083 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/283 ,  H01L21/31144 ,  H01L21/76816

    摘要： In a semiconductor device manufacturing method, on a film to be processed, a mask material film is formed which has pattern openings for a plurality of contact patterns and connection openings for connecting adjacent pattern openings in such a manner that the connection between them is constricted in the middle. Then, a sidewall film is formed on the sidewalls of the individual openings in the mask material film, thereby not only making the diameter of the pattern openings smaller but also separating adjacent pattern openings. Then, the film to be processed is selectively etched with the mask material film and sidewall film as a mask, thereby making contact holes.

    摘要翻译： 在半导体器件制造方法中，在被处理膜上形成掩模材料膜，该掩模材料膜具有用于多个接触图案的图案开口和用于连接相邻图案开口的连接开口，使得它们之间的连接被收缩 中间。 然后，在掩模材料膜中的各个开口的侧壁上形成侧壁膜，由此不仅使得图案开口的直径更小，而且分离相邻的图案开口。 然后，用掩模材料膜和侧壁膜作为掩模选择性地蚀刻待处理的膜，从而形成接触孔。

    Semiconductor device manufacturing method
    3.
    发明授权
    Semiconductor device manufacturing method 有权

    公开(公告)号：US08343874B2

    公开(公告)日：2013-01-01

    申请号：US12126098

    申请日：2008-05-23

    申请人： Shinya Watanabe

    发明人： Shinya Watanabe

    IPC分类号： H01L21/768

    CPC分类号： H01L21/3083 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/283 ,  H01L21/31144 ,  H01L21/76816

    摘要： In a semiconductor device manufacturing method, on a film to be processed, a mask material film is formed which has pattern openings for a plurality of contact patterns and connection openings for connecting adjacent pattern openings in such a manner that the connection between them is constricted in the middle. Then, a sidewall film is formed on the sidewalls of the individual openings in the mask material film, thereby not only making the diameter of the pattern openings smaller but also separating adjacent pattern openings. Then, the film to be processed is selectively etched with the mask material film and sidewall film as a mask, thereby making contact holes.

    IMAGE FORMATION DEVICE, IMAGE FORMATION METHOD AND NON-TRANSITORY STORAGE MEDIUM STORING IMAGE FORMATION PROGRAM
    5.
    发明申请
    IMAGE FORMATION DEVICE, IMAGE FORMATION METHOD AND NON-TRANSITORY STORAGE MEDIUM STORING IMAGE FORMATION PROGRAM 有权
    图像形成装置，图像形成方法和非存储存储介质存储图像形成程序

    公开(公告)号：US20120106999A1

    公开(公告)日：2012-05-03

    申请号：US13112703

    申请日：2011-05-20

    申请人： Tetsuya SONODA ,  Shinya WATANABE ,  Hirotaka UDAGAWA

    发明人： Tetsuya SONODA ,  Shinya WATANABE ,  Hirotaka UDAGAWA

    IPC分类号： G03G15/20

    CPC分类号： G03G15/6529 ,  G03G15/6594 ,  G03G2215/00514 ,  G03G2215/00751 ,  G03G2215/00945 ,  G03G2215/00949

    摘要： An image formation device includes a receiving section, a formation section, a fixing section, a switching section, and a controller. The receiving section receives image formation data including image data, and sheet data which includes designations of a sheet and a corresponding fixing pressure. The formation section forms a toner image on the sheet. The fixing section fixes the toner image on the sheet. The switching section switches the fixing pressure between a first or second fixing pressure. When the fixing pressure is switched to the second fixing pressure and the fixing pressure designated by the sheet data is the first fixing pressure, the controller performs a mandatory image formation that includes a low-speed control that conveys the sheet at a speed lower than that for the first fixing pressure, and/or a toner suppression control that performs image formation with a smaller amount of toner than in normal.

    摘要翻译： 图像形成装置包括接收部分，形成部分，固定部分，切换部分和控制器。 接收部分接收包括图像数据的图像形成数据和包括纸张的指定和相应的定影压力的纸张数据。 形成部分在片材上形成调色剂图像。 固定部分将调色剂图像固定在片材上。 切换部分在第一或第二固定压力之间切换固定压力。 当定影压力切换到第二定影压力并且由片材数据指定的定影压力是第一定影压力时，控制器执行强制性图像形成，其包括以低于该速度的速度传送纸张的低速控制的低速控制 用于第一定影压力和/或调色剂抑制控制，其以比正常情况更少量的调色剂进行图像形成。

    OPTICAL WAVEGUIDE DEVICE AND MANUFACTURING METHOD OF OPTICAL WAVEGUIDE DEVICE
    7.
    发明申请
    OPTICAL WAVEGUIDE DEVICE AND MANUFACTURING METHOD OF OPTICAL WAVEGUIDE DEVICE 有权
    光波器件的制造方法和光波导器件的制造方法

    公开(公告)号：US20110229075A1

    公开(公告)日：2011-09-22

    申请号：US13034923

    申请日：2011-02-25

    申请人： SHINYA WATANABE

    发明人： SHINYA WATANABE

    IPC分类号： G02B6/42 ,  B32B37/14

    CPC分类号： G02B6/125 ,  H04B10/61 ,  Y10T156/10

    摘要： A 90-degree optical hybrid interferometer having an optical path length difference to a pair of the optical signal waveguide arm and the local oscillator optical waveguide arm at either the I phase side or the Q phase side at the TE optical signal side and the TM optical signal side respectively thus giving a phase delay to output interference signals of the I phase side and the Q phase side. The 90-degree optical hybrid interferometer has eight output ports arranged in order of Ip, In, Qp, and Qn at both the TE side and the TM side respectively, by setting the output phase difference which is the sum of the phase difference according to the optical path length difference and phase conversion characteristics of each optical coupler at the I phase side and the Q phase side and the phase delay, as +π/2.

    摘要翻译： 具有与TE光信号侧的I相侧或Q相侧的一对光信号波导臂和本机振荡光波导臂的光程长度差的90度光混合干涉仪，TM光 信号侧，分别给出相位延迟以输出I相侧和Q相侧的干扰信号。 90度光学混合干涉仪具有通过设置作为相位差的和的输出相位差的输出相位差，按照在TE侧和TM侧的Ip，In，Qp和Qn的顺序排列的八个输出端口 在I相侧和Q相侧的每个光耦合器的光程长度差和相位转换特性和相位延迟为+＆pgr / / 2。

    Method of fabricating semiconductor device
    8.
    发明授权
    Method of fabricating semiconductor device 有权

    公开(公告)号：US07994039B2

    公开(公告)日：2011-08-09

    申请号：US12399140

    申请日：2009-03-06

    申请人： Shinichi Hirasawa ,  Shinya Watanabe

    发明人： Shinichi Hirasawa ,  Shinya Watanabe

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28273 ,  H01L27/11521 ,  H01L29/7881

    摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming a plurality of Si-based pattern portions above a semiconductor substrate, the plurality of Si-based pattern portions being adjacent in a direction substantially parallel to a surface of the semiconductor substrate via insulating films; forming a metal film above the plurality of Si-based pattern portions and the insulating films so as to contact with the plurality of Si-based pattern portions; processing whole areas or upper portions of the plurality of Si-based pattern portions into a plurality of silicide layers by a silicidation reaction between the plurality of Si-based pattern portions and the metal film by heat treatment; and removing the plurality of silicide layers formed above the insulating films by applying planarizing treatment to the plurality of silicide layers.

    Lighting device for vehicle
    9.
    发明授权
    Lighting device for vehicle 有权
    车辆照明装置

    公开(公告)号：US07883249B2

    公开(公告)日：2011-02-08

    申请号：US12000197

    申请日：2007-12-10

    申请人： Chiharu Totani ,  Akihiro Misawa ,  Tatsuya Oba ,  Tetsuya Arakawa ,  Shinya Watanabe

    发明人： Chiharu Totani ,  Akihiro Misawa ,  Tatsuya Oba ,  Tetsuya Arakawa ,  Shinya Watanabe

    IPC分类号： F21V8/00

    CPC分类号： B60Q1/0088 ,  B60Q1/2607 ,  B60Q1/2696 ,  F21S43/14 ,  F21S43/237 ,  F21S43/245 ,  F21S43/247 ,  F21S43/30 ,  F21S45/37 ,  F21V7/0091

    摘要： A lighting device for a vehicle includes: a light source; a light guide member that has a light-introducing part provided in a back surface side through which the light of the light source is introduced and finally emits the light from a front surface side; a part near the light-introducing part being thicker than an edge part of the light guide member, a plurality of reflecting parts and connecting parts being alternately formed continuously toward a direction separate from the light-introducing part in the back surface side, the reflecting parts respectively reflecting on interfaces the introduced light reaching there to form the light in the direction of the front surface of the light guide member; and a housing that is connected to a position between the edge part of the back surface of the light guide member and the light-introducing part and attached to the back surface side of the light guide member to house the light source.

    摘要翻译： 一种用于车辆的照明装置，包括：光源; 导光部件，其具有设置在背光源侧的光导入部，通过该导光部件引入光源的光，并最终从前表面侧发光; 光导入部分附近的部分比导光部件的边缘部分厚，多个反射部分和连接部分在背面侧朝向与光导入部分开的方向连续交替地形成，反射 分别在接口上反射到达到达光导件的前表面方向上的光的部分; 以及壳体，其连接到导光构件的后表面的边缘部分和光引入部分之间并且安装到导光构件的背面侧以容纳光源的位置。