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    Control method for device using doped carbon-nanostructure and device comprising doped carbon-nanostructure
    1.
    发明授权
    Control method for device using doped carbon-nanostructure and device comprising doped carbon-nanostructure 有权
    使用掺杂碳纳米结构的器件的控制方法和包含掺杂碳纳米结构的器件

    公开(公告)号：US08729597B2

    公开(公告)日：2014-05-20

    申请号：US13298162

    申请日：2011-11-16

    申请人： Sang Ouk Kim ,  Ji Sun Park ,  Ju Min Lee ,  Myoung Hoon Song

    发明人： Sang Ouk Kim ,  Ji Sun Park ,  Ju Min Lee ,  Myoung Hoon Song

    IPC分类号： H01L33/14 ,  H01L33/26 ,  H01L31/0256

    CPC分类号： H01L51/002 ,  B82Y10/00 ,  H01L51/0048 ,  Y02E10/549

    摘要： Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device.

    摘要翻译： 提供了一种使用掺杂碳纳米结构的器件的控制方法，以及包括掺杂碳 - 纳米结构的器件，其中用于控制器件的方法选择性地控制电子或空穴的迁移率使用N型或P型掺杂 碳纳米结构; N型或P型掺杂杂质的碳纳米结构可以根据掺杂材料选择性地控制电子或空穴的传输; 并且由于掺杂的碳纳米结构限制了与传输促进电荷相反的电荷的电荷的传输，所以它可以通过添加到器件的功能层或者在电子或空穴中作为单独的层来使用来提高器件的效率 - 运输设备。

    Method for preparing inorganic-nanostructure composite material, method for preparing carbon nanotube composite using same, and carbon nanotube composite prepared thereby
    3.
    发明授权
    Method for preparing inorganic-nanostructure composite material, method for preparing carbon nanotube composite using same, and carbon nanotube composite prepared thereby 有权
    制备无机纳米结构复合材料的方法，使用其制备碳纳米管复合材料的方法和由此制备的碳纳米管复合材料

    公开(公告)号：US09375751B2

    公开(公告)日：2016-06-28

    申请号：US13704611

    申请日：2011-11-29

    申请人： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

    发明人： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

    IPC分类号： B05D1/18 ,  B82Y40/00 ,  C01B31/02 ,  B82Y30/00 ,  B05D3/10 ,  B05D3/00

    CPC分类号： B05D1/18 ,  B05D3/002 ,  B05D3/104 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  Y10T428/2918 ,  Y10T428/2991

    摘要： A method for manufacturing an inorganic-nano structure composite, a method for manufacturing a cabon nanotube composite by using the same, and a carbon nanotube composite manufactured by the same are provided. The method for manufacturing the inorganic-nano structure composite comprises a step of doping pentavalent elements on the nanostructure; and a step of growing the inorganic material from the doping points of the pentavalent elements by dipping the nanostructure on which the pentavalent elements are doped into a precursor solution of the inorganic material, and according to the present invention the pentavalent elements such as nitrogen are doped on the nanostructure and is utilized as the crystallization point of the inorganic material, instead of forming the separate coating layer to the organic-based nanostructure, or binding the binding group to the surface.

    摘要翻译： 提供一种无机纳米结构复合体的制造方法，使用该方法制造碳纳米管复合体的方法和由其制造的碳纳米管复合体。 制备无机纳米结构复合材料的方法包括在纳米结构上掺杂五价元素的步骤; 以及通过将掺杂有五价元素的纳米结构浸渍在无机材料的前体溶液中，从五价元素的掺杂点生长无机材料的步骤，根据本发明，将五价元素如氮掺杂 并且被用作无机材料的结晶点，而不是形成分离的涂层到有机基纳米结构，或将结合基团结合到表面。

    METHOD FOR PREPARING INORGANIC-NANOSTRUCTURE COMPOSITE MATERIAL, METHOD FOR PREPARING CARBON NANOTUBE COMPOSITE USING SAME, AND CARBON NANOTUBE COMPOSITE PREPARED THEREBY
    4.
    发明申请
    METHOD FOR PREPARING INORGANIC-NANOSTRUCTURE COMPOSITE MATERIAL, METHOD FOR PREPARING CARBON NANOTUBE COMPOSITE USING SAME, AND CARBON NANOTUBE COMPOSITE PREPARED THEREBY 有权
    制备无机纳米结构复合材料的方法，使用其制备碳纳米管复合材料的方法和制备的碳纳米管复合材料

    公开(公告)号：US20130089735A1

    公开(公告)日：2013-04-11

    申请号：US13704611

    申请日：2011-11-29

    申请人： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

    发明人： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

    IPC分类号： B05D1/18

    CPC分类号： B05D1/18 ,  B05D3/002 ,  B05D3/104 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  Y10T428/2918 ,  Y10T428/2991

    摘要： A method for manufacturing an inorganic-nano structure composite, a method for manufacturing a cabon nanotube composite by using the same, and a carbon nanotube composite manufactured by the same are provided. The method for manufacturing the inorganic-nano structure composite comprises a step of doping pentavalent elements on the nanostructure; and a step of growing the inorganic material from the doping points of the pentavalent elements by dipping the nanostructure on which the pentavalent elements are doped into a precursor solution of the inorganic material, and according to the present invention the pentavalent elements such as nitrogen are doped on the nanostructure and is utilized as the crystallization point of the inorganic material, instead of forming the separate coating layer to the organic-based nanostructure, or binding the binding group to the surface.

    摘要翻译： 提供一种无机纳米结构复合体的制造方法，使用该方法制造碳纳米管复合体的方法和由其制造的碳纳米管复合体。 制备无机纳米结构复合材料的方法包括在纳米结构上掺杂五价元素的步骤; 以及通过将掺杂有五价元素的纳米结构浸渍在无机材料的前体溶液中，从五价元素的掺杂点生长无机材料的步骤，根据本发明，将五价元素如氮掺杂 并且被用作无机材料的结晶点，而不是形成分离的涂层到有机基纳米结构，或将结合基团结合到表面。

    Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern
    6.
    发明授权
    Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern 有权
    形成图案的方法和制造具有图案的半导体器件的方法

    公开(公告)号：US08273668B2

    公开(公告)日：2012-09-25

    申请号：US12805432

    申请日：2010-07-30

    申请人： Dong Ki Yoon ,  Shiyong Yi ,  Kyoungseon Kim ,  Seongwoon Choi ,  Seokhwan Oh ,  Sang Ouk Kim ,  Seung Hak Park

    发明人： Dong Ki Yoon ,  Shiyong Yi ,  Kyoungseon Kim ,  Seongwoon Choi ,  Seokhwan Oh ,  Sang Ouk Kim ,  Seung Hak Park

    IPC分类号： H01L21/31 ,  H01L21/302

    CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

    摘要： Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first pattern, a second pattern and a third pattern are formed by phase separating the block copolymer. At least one of the first, second and third patterns may be removed to form a preliminary pattern. An etching process may be performed using the preliminary pattern as an etching mask. The first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern.

    摘要翻译： 提供了形成图案的方法和制造具有图案的半导体器件的方法，所述方法包括在半导体衬底上形成包括第一区域和第二区域的自组装感应层。 在自组装感应层上涂布嵌段共聚物层。 通过相分离嵌段共聚物形成第一图案，第二图案和第三图案。 可以去除第一，第二和第三图案中的至少一个以形成初步图案。 可以使用初步图案作为蚀刻掩模来执行蚀刻工艺。 第一图案包含与第二图案相同的材料，第三图案包含与第一图案不同的材料。

    Method of forming fine patterns using a block copolymer
    8.
    发明申请
    Method of forming fine patterns using a block copolymer 有权
    使用嵌段共聚物形成精细图案的方法

    公开(公告)号：US20090042146A1

    公开(公告)日：2009-02-12

    申请号：US12076491

    申请日：2008-03-19

    申请人： Kyoung Taek Kim ,  Hyun Woo Kim ,  Sang Ouk Kim ,  Shi Yong Yi ,  Seong Woon Choi

    发明人： Kyoung Taek Kim ,  Hyun Woo Kim ,  Sang Ouk Kim ,  Shi Yong Yi ,  Seong Woon Choi

    IPC分类号： G03F7/20

    CPC分类号： B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00

    摘要： A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

    摘要翻译： 图案化衬底的方法包括处理衬底的第一区域以形成第一图案，第一区域限定相邻第一区域之间的第二区域，在第一和第二区域上布置嵌段共聚物，所述嵌段共聚物包括第一组分和 第二组分，嵌段共聚物的第一组分在第一区域上对准，并且选择性地除去嵌段共聚物的第一组分和第二组分中的一种，以形成具有小于间距的沥青的第二图案 第一区域和相邻的第二区域。

    3-dimensional nanostructure having nanomaterials stacked on graphene substrate and fabrication method thereof
    9.
    发明授权
    3-dimensional nanostructure having nanomaterials stacked on graphene substrate and fabrication method thereof 有权
    具有堆叠在石墨烯衬底上的纳米材料的三维纳米结构及其制造方法

    公开(公告)号：US08808860B2

    公开(公告)日：2014-08-19

    申请号：US13322385

    申请日：2010-09-20

    申请人： Sang Ouk Kim ,  Won Jong Lee ,  Duck Hyun Lee ,  Tae Hee Han ,  Ji Eun Kim ,  Jin Ah Lee ,  Keon Jae Lee

    发明人： Sang Ouk Kim ,  Won Jong Lee ,  Duck Hyun Lee ,  Tae Hee Han ,  Ji Eun Kim ,  Jin Ah Lee ,  Keon Jae Lee

    IPC分类号： B32B9/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/304 ,  H01J9/025 ,  H01L51/0048 ,  Y10T428/25 ,  Y10T428/30

    摘要： The present invention relates to a 3-dimensional nanostructure having nanomaterials stacked on a graphene substrate; and more specifically, to a 3-dimensional nanostructure having at least one nanomaterial selected from nanotubes, nanowires, nanorods, nanoneedles and nanoparticles grown on a reduced graphene substrate. The present invention enables the achievement of a synergy effect of the 3-dimensional nanostructure hybridizing 1-dimensional nanomaterials and 2-dimensional graphene. The nanostructure according to the present invention is excellent in flexibility and elasticity, and can easily be transferred to any substrate having a non-planar surface. Also, all junctions in nanomaterials, a metal catalyst and a graphene film system form the ohmic electrical contact, which allows the nanostructure to easily be incorporated into a field-emitting device.

    摘要翻译： 本发明涉及一种具有层叠在石墨烯衬底上的纳米材料的三维纳米结构; 更具体地说，涉及一种具有至少一种纳米材料的纳米结构的纳米结构，所述纳米材料选自在还原的石墨烯衬底上生长的纳米管，纳米线，纳米针和纳米线。 本发明能够实现3维纳米结构与1维纳米材料和2维石墨烯杂交的协同作用。 本发明的纳米结构体的柔软性和弹性优异，可以容易地转移到具有非平面的任何基材。 而且，纳米材料中的所有结，金属催化剂和石墨烯膜系统形成欧姆电接触，这允许纳米结构容易地结合到场发射器件中。

    Flexible nanocomposite generator and method for manufacturing the same
    10.
    发明授权
    Flexible nanocomposite generator and method for manufacturing the same 有权
    柔性纳米复合材料发生器及其制造方法

    公开(公告)号：US08803406B2

    公开(公告)日：2014-08-12

    申请号：US13307870

    申请日：2011-11-30

    申请人： Keon Jae Lee ,  Kwi-Il Park ,  Do Kyung Kim ,  Sang Ouk Kim ,  Geon-Tae Hwang

    发明人： Keon Jae Lee ,  Kwi-Il Park ,  Do Kyung Kim ,  Sang Ouk Kim ,  Geon-Tae Hwang

    IPC分类号： H01L41/113 ,  H01L41/18

    CPC分类号： H01L41/37 ,  B82Y30/00 ,  H01L41/113 ,  H01L41/183

    摘要： There are provided a flexible nanocomposite generator and a method of manufacturing the same. A flexible nanocomposite generator according to the present invention includes a piezoelectric layer formed of a flexible matrix containing piezoelectric nanoparticles and carbon nanostructures; and electrode layers disposed on the upper and lower surfaces of both sides of the piezoelectric layer, in which according to a method for manufacturing a flexible nanocomposite generator according to the present invention and a flexible nanogenerator, it is possible to manufacture a flexible nanogenerator with a large area and a small thickness. Therefore, the nanogenerator may be used as a portion of a fiber or cloth. Accordingly, the nanogenerator according to the present invention generates power in accordance with bending of attached cloth, such that it is possible to continuously generate power in accordance with movement of a human body.

    摘要翻译： 提供了一种柔性纳米复合发生器及其制造方法。 根据本发明的柔性纳米复合发生器包括由含有压电纳米颗粒和碳纳米结构的柔性基体形成的压电层; 以及设置在压电体层的两侧的上表面和下表面上的电极层，其中根据本发明的柔性纳米复合材料发生器的制造方法和柔性纳米发生器，可以制造具有 面积大，厚度小。 因此，纳米发生器可以用作纤维或布的一部分。 因此，根据本发明的纳米发生器根据附着的布的弯曲产生动力，使得可以根据人体的运动连续发电。